专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060024978A1 Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects 有权
标题翻译：在二氧化硅 - 碳化硅界面处纳入氮以钝化界面缺陷
公开(公告)号：US20060024978A1
公开(公告)日：2006-02-02
申请号：US11122474
申请日：2005-05-05
申请人： Gilyong Chung , Chin-Che Tin , John Williams , Kyle McDonald , Massimiliano De Ventra , Robert Weller , Socrates Pantelides , Leonard Feldman
发明人： Gilyong Chung , Chin-Che Tin , John Williams , Kyle McDonald , Massimiliano De Ventra , Robert Weller , Socrates Pantelides , Leonard Feldman
IPC分类号： H01L21/31
CPC分类号： H01L21/3145 , H01L21/0214 , H01L21/02164 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/045 , H01L21/049 , H01L21/31658 , H01L29/1608 , H01L29/513 , H01L29/518 , H01L29/66068 , Y10S438/931
摘要： In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.
摘要翻译：一方面，本发明提供一种制造碳化硅半导体器件的方法。在碳化硅衬底上形成二氧化硅层，并且在二氧化硅/碳化硅界面上并入氮。在一个实施方案中，通过在一氧化氮或一氧化二氮中对半导体器件退火来引入氮。在另一个实施方案中，通过用氨将半导体器件退火而并入氮气。另一方面，本发明提供一种碳化硅半导体器件，其具有4H-碳化硅衬底，设置在4H-碳化硅衬底上的二氧化硅层和在二氧化硅/碳化硅界面处具有显着的氮浓度的区域。

2. 发明申请

US20080128709A1 Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects 有权
标题翻译：在二氧化硅 - 碳化硅界面处纳入氮以钝化界面缺陷
公开(公告)号：US20080128709A1
公开(公告)日：2008-06-05
申请号：US11811396
申请日：2007-06-08
申请人： Gilyong Chung , Chin-Che Tin , John R. Williams , Kyle McDonald , Massimiliano De Ventra , Robert A. Weller , Socrates T. Pantelides , Leonard C. Feldman
发明人： Gilyong Chung , Chin-Che Tin , John R. Williams , Kyle McDonald , Massimiliano De Ventra , Robert A. Weller , Socrates T. Pantelides , Leonard C. Feldman
IPC分类号： H01L29/24
CPC分类号： H01L21/3145 , H01L21/0214 , H01L21/02164 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/045 , H01L21/049 , H01L21/31658 , H01L29/1608 , H01L29/513 , H01L29/518 , H01L29/66068 , Y10S438/931
摘要： In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia.In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.
摘要翻译：一方面，本发明提供一种制造碳化硅半导体器件的方法。在碳化硅衬底上形成二氧化硅层，并且在二氧化硅/碳化硅界面上并入氮。在一个实施方案中，通过在一氧化氮或一氧化二氮中对半导体器件退火来引入氮。在另一个实施方案中，通过用氨将半导体器件退火而并入氮气。另一方面，本发明提供一种碳化硅半导体器件，其具有4H-碳化硅衬底，设置在4H-碳化硅衬底上的二氧化硅层和在二氧化硅/碳化硅界面处具有显着的氮浓度的区域。

3. 发明授权

US06939756B1 Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects 有权
标题翻译：在二氧化硅 - 碳化硅界面处纳入氮以钝化界面缺陷
公开(公告)号：US06939756B1
公开(公告)日：2005-09-06
申请号：US09818193
申请日：2001-03-26
申请人： Gilyong Chung , Chin Che Tin , John R. Williams , Kyle McDonald , Massimiliano Di Ventra , Robert A. Weller , Sokrates T. Pantelides , Leonard C. Feldman
发明人： Gilyong Chung , Chin Che Tin , John R. Williams , Kyle McDonald , Massimiliano Di Ventra , Robert A. Weller , Sokrates T. Pantelides , Leonard C. Feldman
IPC分类号： H01L21/04 , H01L21/3115
CPC分类号： H01L21/3145 , H01L21/0214 , H01L21/02164 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/045 , H01L21/049 , H01L21/31658 , H01L29/1608 , H01L29/513 , H01L29/518 , H01L29/66068 , Y10S438/931
摘要： A method for manufacturing a silicon carbide semiconductor device. In one embodiment, the method includes the following steps: a layer of silicon dioxide is formed on a silicon carbide substrate to create a silicon dioxide/silicon carbide interface and then nitrogen is incorporated at the silicon dioxide/silicon carbide interface for reduction in an interface trap density. The silicon carbide substrate, in one embodiment, includes a n-type 4H-silicon carbide.
摘要翻译：一种制造碳化硅半导体器件的方法。在一个实施例中，该方法包括以下步骤：在碳化硅衬底上形成一层二氧化硅以产生二氧化硅/碳化硅界面，然后在二氧化硅/碳化硅界面处并入氮以还原界面陷阱密度。在一个实施例中，碳化硅衬底包括n型4H-碳化硅。

4. 发明授权

US07235438B2 Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects 有权
标题翻译：在二氧化硅 - 碳化硅界面处纳入氮以钝化界面缺陷
公开(公告)号：US07235438B2
公开(公告)日：2007-06-26
申请号：US11122474
申请日：2005-05-05
申请人： Gilyong Chung , Chin-Che Tin , John R. Williams , Kyle McDonald , Massimiliano Di Ventra , Robert A. Weller , Socrates T. Pantelides , Leonard C. Feldman
发明人： Gilyong Chung , Chin-Che Tin , John R. Williams , Kyle McDonald , Massimiliano Di Ventra , Robert A. Weller , Socrates T. Pantelides , Leonard C. Feldman
IPC分类号： H01L21/3105
CPC分类号： H01L21/3145 , H01L21/0214 , H01L21/02164 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/045 , H01L21/049 , H01L21/31658 , H01L29/1608 , H01L29/513 , H01L29/518 , H01L29/66068 , Y10S438/931
摘要： In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia.In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.
摘要翻译：一方面，本发明提供一种制造碳化硅半导体器件的方法。在碳化硅衬底上形成二氧化硅层，并且在二氧化硅/碳化硅界面上并入氮。在一个实施方案中，通过在一氧化氮或一氧化二氮中对半导体器件退火来引入氮。在另一个实施方案中，通过用氨将半导体器件退火而并入氮气。另一方面，本发明提供一种碳化硅半导体器件，其具有4H-碳化硅衬底，设置在4H-碳化硅衬底上的二氧化硅层和在二氧化硅/碳化硅界面处具有显着的氮浓度的区域。

5. 发明申请

US20100006859A1 Method of Manufacturing Substrates Having Improved Carrier Lifetimes 审中-公开
标题翻译：制造具有改善载体寿命的基板的方法
公开(公告)号：US20100006859A1
公开(公告)日：2010-01-14
申请号：US12373145
申请日：2007-07-17
申请人： Gilyong Chung , Mark Loboda
发明人： Gilyong Chung , Mark Loboda
IPC分类号： H01L29/24 , H01L21/20
CPC分类号： H01L21/02529 , C23C16/325 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： This invention relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a chlorosilane gas, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000° C. but less than 2000° C.; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr. This invention also relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a non-chlorinated silicon-containing gas, hydrogen chloride, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000° C. but less than 2000° C.; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr.
摘要翻译：本发明涉及一种将碳化硅材料沉积到衬底上的方法，使得所得到的衬底具有0.5-1000微秒的载流子寿命，该方法包括a。将含有氯代硅烷气体，含碳气体和氢气的气体混合物引入含有基板的反应室中; 和b。将基板加热到大于1000℃但小于2000℃的温度; 条件是反应室内的压力保持在0.1至760托的范围内。本发明还涉及一种将碳化硅材料沉积到衬底上的方法，使得所得到的衬底具有0.5-1000微秒的载流子寿命，该方法包括a。将含有非氯化含硅气体，氯化氢，含碳气体和氢气的气体混合物引入含有基板的反应室中; 和b。将基板加热到大于1000℃但小于2000℃的温度; 条件是反应室内的压力保持在0.1至760托的范围内。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式