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1. 发明申请

US20100248487A1 METHOD AND APPARATUS FOR ELIMINATION OF MICRO-TRENCHING DURING ETCHING OF A HARDMASK LAYER 审中-公开
标题翻译：用于消除HARDMASK层蚀刻微细化的方法和装置
公开(公告)号：US20100248487A1
公开(公告)日：2010-09-30
申请号：US12716985
申请日：2010-03-03
申请人： Gene H. Lee , Wallace Wang , Bei Hao
发明人： Gene H. Lee , Wallace Wang , Bei Hao
IPC分类号： H01L21/306
CPC分类号： H01L21/31116 , H01L21/3081
摘要： Described herein are exemplary methods and apparatuses for etching a nitride layer disposed above a substrate to form trenches without micro-trenching in accordance with one embodiment. The method includes forming openings in a resist layer and one or more dielectric layers. The dielectric layers may be disposed on a hard mask layer (e.g., nitride, polysilicon). Next, the method includes etching openings in the hard mask layer disposed above a substrate layer without micro-trenching. The etching occurs in a process chamber during a main etch with a first process gas mixture having a fluorocarbon gas, a hydrofluorocarbon gas, and an oxygenating gas. Next, the method includes etching openings partially into the substrate without micro-trenching with a second process gas mixture during an over etch having the fluorocarbon gas, the hydrofluorocarbon gas, and the oxygenating gas.
摘要翻译：这里描述了根据一个实施例的用于蚀刻设置在基板上方的氮化物层以形成没有微挖沟的沟槽的示例性方法和装置。该方法包括在抗蚀剂层和一个或多个介电层中形成开口。电介质层可以设置在硬掩模层（例如，氮化物，多晶硅）上。接下来，该方法包括在没有微沟槽的情况下在设置在基底层上方的硬掩模层中蚀刻开口。在利用具有碳氟化合物气体，氢氟烃气体和含氧气体的第一工艺气体混合物的主蚀刻期间，在处理室中发生蚀刻。接下来，该方法包括在具有碳氟化合物气体，氢氟烃气体和氧化气体的过蚀刻期间，将开口部分地蚀刻到衬底中，而不用第二工艺气体混合物进行微挖沟。

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