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1. 发明授权

US07510903B1 Transient voltage suppression device 有权
标题翻译：瞬态电压抑制装置
公开(公告)号：US07510903B1
公开(公告)日：2009-03-31
申请号：US12042826
申请日：2008-03-05
申请人： Fred Matteson , Venkatesh P. Pai , Donald K. Cartmell
发明人： Fred Matteson , Venkatesh P. Pai , Donald K. Cartmell
IPC分类号： H01L21/00 , H01L21/20
CPC分类号： H01L27/0814 , H01L27/0817 , H01L29/861 , H01L29/866
摘要： A bi-directional transient voltage suppression (“TVS”) device (101) includes a semiconductor die (201) that has a first avalanche diode (103) in series with a first rectifier diode (104) connected cathode to cathode, electrically coupled in an anti-parallel configuration with a second avalanche diode (105) in series with a second rectifier diode (106) also connected cathode to cathode. All the diodes of the TVS device are on a single semiconductor substrate (301). The die has a low resistivity buried diffused layer (303) having a first conductivity type disposed between a semiconductor substrate (301) having the opposite conductivity type and a high resistivity epitaxial layer (305) having the first conductivity type. The buried diffused layer shunts most of a transient current away from a portion of the epitaxial layer between the first avalanche diode and the first rectifier diode, thereby reducing the clamping voltage relative to the breakdown voltage. The TVS device is packaged as a flip chip (202) that has four solder bump pads (211-214). The abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims pursuant to 37 C.F.R. §1.72(b).
摘要翻译：双向瞬态电压抑制（“TVS”）器件（101）包括半导体管芯（201），其具有与阴极 - 阴极连接的第一整流二极管（104）串联的第一雪崩二极管（103）具有与第二整流二极管（106）串联的第二雪崩二极管（105）的反并联配置也连接阴极至阴极。 TVS器件的所有二极管都在单个半导体衬底（301）上。芯片具有设置在具有相反导电类型的半导体衬底（301）和具有第一导电类型的高电阻率外延层（305）之间的具有第一导电类型的低电阻率掩埋扩散层（303）。掩埋扩散层将大部分瞬态电流从第一雪崩二极管和第一整流二极管之间的外延层的一部分分流，从而相对于击穿电压降低钳位电压。 TVS装置被封装成具有四个焊料凸块（211-214）的倒装芯片（202）。提交摘要的理解是，根据37 C.F.R.不会将其用于解释或限制索赔的范围或含义。 §1.72（b）。

2. 发明授权

US08526636B1 Click-pop noise suppression system 有权
标题翻译：点击声音抑制系统
公开(公告)号：US08526636B1
公开(公告)日：2013-09-03
申请号：US12832010
申请日：2010-07-07
申请人： Venkatesh P. Pai , Mohammad Rehman , Umesh Jayamohan
发明人： Venkatesh P. Pai , Mohammad Rehman , Umesh Jayamohan
IPC分类号： H04B15/00
CPC分类号： H03F1/305 , H03F2200/03
摘要： A click-noise suppression system having MOSFET transistor switches positioned between the preamplifiers and coupling capacitors of an audio system wherein the suppression system maintains the switches off when the system is turned on until a charging circuit increases the gate voltage of the switches. The switches quickly turn off and the coupling capacitors are discharged through discharge resistors when the system is turned off.
摘要翻译：具有位于音频系统的前置放大器和耦合电容器之间的MOSFET晶体管开关的点击噪声抑制系统，其中当系统接通直到充电电路增加开关的栅极电压时，抑制系统保持关断。当系统关闭时，开关快速关闭，耦合电容通过放电电阻放电。

3. 发明申请

US20100019820A1 DIGITAL CONTROL SYSTEM AND METHOD 审中-公开
标题翻译：数字控制系统及方法
公开(公告)号：US20100019820A1
公开(公告)日：2010-01-28
申请号：US12439618
申请日：2008-01-23
申请人： Venkatesh P. Pai , Mohammad Rehman , Umesh Jayamohan
发明人： Venkatesh P. Pai , Mohammad Rehman , Umesh Jayamohan
IPC分类号： H03H11/26
CPC分类号： H03K17/28 , H03K17/161 , H03K17/163 , H03K17/30 , H03K17/302 , H03K17/6872 , H03K2217/0036
摘要： A low power monolithic CMOS device incorporating functions to control power supply transition noise such as in audio circuits and systems. The digital control circuit incorporates MOSFETs that are maintained in an OFF state during normal operation and are turned ON only when system power is turned on or off to thus eliminate the need for bias voltages and maintain minimal quiescent current.
摘要翻译：一种低功耗单片CMOS器件，具有控制电源转换噪声（如音频电路和系统）功能的功能。数字控制电路包括在正常操作期间保持在OFF状态的MOSFET，并且仅在系统电源接通或断开时才导通，从而消除对偏置电压的需要并保持最小的静态电流。

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