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1. 发明授权

US09534287B2 Machine for implanting ions in plasma immersion mode for a low-pressure method 有权
标题翻译：用于低压法等离子体浸入式离子注入的机器
公开(公告)号：US09534287B2
公开(公告)日：2017-01-03
申请号：US14117166
申请日：2012-06-07
申请人： Frank Torregrosa , Laurent Roux
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： H01J37/32 , C23C14/48
CPC分类号： C23C14/48 , H01J37/32174 , H01J37/3233 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J37/32706
摘要： An ion implantation machine includes an enclosure that is connected to a pump device, a negatively polarized substrate-carrier that is arranged inside the enclosure, and a plasma feed device in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber provided with an ionization cell, the main chamber being provided with a gas delivery orifice, and the final section of the main chamber being provided with a head-loss component for creating a pressure drop relative to the body. Furthermore, the plasma feed device also includes an auxiliary chamber arranged beyond the final section, the auxiliary chamber opening out into the enclosure at the terminal section.
摘要翻译：离子注入机包括连接到泵装置的外壳，布置在外壳内部的负极化衬底载体，以及在初始部分和终端部分之间延伸的大致圆柱形主体形式的等离子体供给装置所述装置具有设置有电离池的主室，所述主室设置有气体输送孔，并且所述主室的最后部分设置有相对于所述主体产生压降的头部损失部件。此外，等离子体馈送装置还包括布置在最后部分之外的辅助室，辅助室在端子部分处打开到外壳中。

2. 发明授权

US08895945B2 Dose measurement device for plasma-immersion ion implantation 有权
标题翻译：用于等离子体浸没离子注入的剂量测量装置
公开(公告)号：US08895945B2
公开(公告)日：2014-11-25
申请号：US13701291
申请日：2011-06-01
申请人： Frank Torregrosa , Laurent Roux
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： G21K5/04 , H01J37/32 , H01J37/244 , G01T1/02
CPC分类号： G01T1/02 , H01J37/244 , H01J37/32412 , H01J37/32422 , H01J37/32935 , H01J2237/24405 , H01J2237/2448 , H01J2237/31703
摘要： The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.
摘要翻译：本发明涉及一种用于离子注入的剂量测量装置，该装置包括用于估计注入电流的模块CUR，二次电子检测器DSE和用于通过将所述注入电流和来自所述二次电子检测器的电流。此外，所述高能二次电子检测器包括：收集器COL，P，其支承正好三个相互绝缘的电极：第一斥力电极G1，A1，T1，用于排斥预定符号的待排斥电荷，所述电极设置在用于通过电子的至少一个孔口; 第二排斥电极G2，A2，T2，用于排斥相反符号的要排斥的电荷，所述电极还设置有至少一个用于通过电子的孔口; 以及选择电极G3，A3，T3，该电极还设置有用于使电子通过的至少一个孔。

3. 发明申请

US20140102370A1 MACHINE FOR IMPLANTING IONS IN PLASMA IMMERSION MODE FOR A LOW-PRESSURE METHOD 有权
标题翻译：用于在低压方法的等离子体浸没模式中进行离子注入的机器
公开(公告)号：US20140102370A1
公开(公告)日：2014-04-17
申请号：US14117166
申请日：2012-06-07
申请人： Frank Torregrosa , Laurent Roux
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： C23C14/48
CPC分类号： C23C14/48 , H01J37/32174 , H01J37/3233 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J37/32706
摘要： The present invention provides an ion implantation machine comprising: an enclosure ENV that is connected to a pump device VAC; a negatively polarized HT substrate-carrier PPS that is arranged inside said enclosure ENV; and a plasma feed device AP in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber PR provided with an ionization cell BC1, ANT1; said main chamber PR being provided with a gas delivery orifice ING; and the final section CL of said main chamber being provided with head-loss means for creating a pressure drop relative to said body AP. Furthermore, said plasma feed device AP also includes an auxiliary chamber AUX arranged beyond said final section, said auxiliary chamber opening out into said enclosure ENV at said terminal section.
摘要翻译：本发明提供一种离子注入机，包括：连接到泵装置VAC的外壳ENV; 设置在所述外壳ENV内的负极化HT衬底载体PPS; 以及在初始部分和端子部分之间延伸的大致圆筒形形式的等离子体供给装置AP，该装置具有设置有电离单元BC1，ANT1的主室PR; 所述主室PR设置有气体输送孔ING; 并且所述主室的最后部分CL设置有相对于所述主体AP产生压降的头部损失装置。此外，所述等离子体馈送装置AP还包括布置在所述最后部分之外的辅助室AUX，所述辅助室在所述端子部分处打开到所述外壳ENV中。

4. 发明申请

US20130153779A1 DOSE MEASUREMENT DEVICE FOR PLASMA-IMMERSION ION IMPLANTATION 有权
标题翻译：用于等离子体离子植入的剂量测量装置
公开(公告)号：US20130153779A1
公开(公告)日：2013-06-20
申请号：US13701291
申请日：2011-06-01
申请人： Frank Torregrosa , Laurent Roux
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： G01T1/02
CPC分类号： G01T1/02 , H01J37/244 , H01J37/32412 , H01J37/32422 , H01J37/32935 , H01J2237/24405 , H01J2237/2448 , H01J2237/31703
摘要： The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.
摘要翻译：本发明涉及一种用于离子注入的剂量测量装置，该装置包括用于估计注入电流的模块CUR，二次电子检测器DSE和用于通过将所述注入电流和来自所述二次电子检测器的电流。此外，所述高能二次电子检测器包括：收集器COL，P，其支承正好三个相互绝缘的电极：第一斥力电极G1，A1，T1，用于排斥预定符号的待排斥电荷，所述电极设置在用于通过电子的至少一个孔口; 第二排斥电极G2，A2，T2，用于排斥相反符号的要排斥的电荷，所述电极还设置有至少一个用于通过电子的孔口; 以及选择电极G3，A3，T3，该电极还设置有用于使电子通过的至少一个孔。

5. 发明申请

US20130134321A1 DETECTOR FOR ENERGETIC SECONDARY ELECTRONS 审中-公开
标题翻译：能量二次电子探测器
公开(公告)号：US20130134321A1
公开(公告)日：2013-05-30
申请号：US13701264
申请日：2011-06-01
申请人： Frank Torregrosa , Laurent Roux
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： G01T1/28
CPC分类号： G01T1/28 , H01J37/244 , H01J37/32412 , H01J37/32422 , H01J37/32935 , H01J47/001 , H01J2237/24405 , H01J2237/2448 , H01J2237/24485
摘要： The present invention relates to a high-energy secondary electron detector comprising a collector P supporting only three electrodes that are insulated from one another and that are biased relative to the collector: a first repulsion electrode A1 for repelling charges of a first predetermined sign that are to be repelled, this negatively-biased electrode being provided with at least one opening for passing electrons; a second repulsion electrode A2 for repelling charges of the opposite sign that are to be repelled, this positively-biased electrode also being provided with at least one opening for passing electrons; and a selection electrode A3, this electrode also being provided with at least one opening for passing electrons; the openings in said electrodes being in alignment along a conduction cylinder D. Furthermore, the selection electrode A3 is negatively biased. The invention also provides a method of detecting secondary electrons by means of the detector.
摘要翻译：高能二次电子检测器本发明涉及一种高能二次电子检测器，它包括仅支持彼此绝缘并且相对于集电极偏置的三个电极的集电极P：用于排斥第一预定符号的电荷的第一排斥电极A1，要被排斥，该负偏压电极设置有用于通过电子的至少一个开口; 第二斥力电极A2，用于排斥相反符号的要被排斥的电荷，该正偏置电极还设置有用于使电子通过的至少一个开口; 和选择电极A3，该电极还设置有用于使电子通过的至少一个开口; 所述电极中的开口沿着导电圆柱体D对准。此外，选择电极A3被负偏压。本发明还提供了一种通过检测器检测二次电子的方法。

6. 发明申请

US20100012031A1 Method and apparatus for optically characterizing the doping of a substrate 审中-公开
标题翻译：用于光学表征衬底掺杂的方法和装置
公开(公告)号：US20100012031A1
公开(公告)日：2010-01-21
申请号：US12308446
申请日：2007-06-14
申请人： Frank Torregrosa , Laurent Roux
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： C23C14/48 , G01N21/55 , G01N21/95
CPC分类号： G01N21/9501 , G01N21/55 , G01N2021/215
摘要： The invention relates to a method of optical characterization, comprising a step of evaluating the doping of a substrate (SUB) using a reflected beam emanating from a light source, said method being carried out using apparatus comprising: said light source (LAS) to produce an incident beam (I) in an axis of incidence; a first detector (DET1, DET2) to measure the power of said reflected beam (R) in an axis of reflection; said axes of incidence and reflection crossing at a measurement point and forming a non-zero angle of measurement; and a polarizer (POL) disposed in the path of the incident beam (I). Furthermore, the light source (LAS) is monochromatic. The invention also envisages an ion implanter provided with said apparatus.
摘要翻译：本发明涉及一种光学表征的方法，包括使用从光源发出的反射光束来评估衬底（SUB）的掺杂的步骤，所述方法使用以下装置进行：所述光源（LAS）产生在入射轴上的入射光束（I）; 第一检测器（DET1，DET2），用于在反射轴中测量所述反射光束（R）的功率; 所述入射和反射轴在测量点处交叉并形成非零测量角; 以及设置在入射光束（I）的路径中的偏振器（POL）。此外，光源（LAS）是单色的。本发明还设想了设置有所述装置的离子注入机。

7. 发明申请

US20080315127A1 Ion Implanter Operating in Pulsed Plasma Mode 审中-公开
标题翻译：离子插入机在脉冲等离子体模式下工作
公开(公告)号：US20080315127A1
公开(公告)日：2008-12-25
申请号：US11629690
申请日：2005-06-14
申请人： Frank Torregrosa , Gilles Mathieu , Laurent Roux
发明人： Frank Torregrosa , Gilles Mathieu , Laurent Roux
IPC分类号： A61N5/00
CPC分类号： H01J37/32412 , C23C8/36 , C23C14/48 , H01J37/32706
摘要： The present invention relates to an ion implanter IMP comprising a pulsed plasma source SPL, a substrate-carrier tray PPS, and a power supply ALT for the tray. The implanter also includes a capacitor C connected directly to ground E and connected downstream from the tray power supply ALT. The invention also provides a method of using the implanter.
摘要翻译：本发明涉及一种离子注入机IMP，其包括脉冲等离子体源SPL，基板载体托盘PPS和用于托盘的电源ALT。注入机还包括直接连接到地E并连接在托盘电源ALT下游的电容器C. 本发明还提供了一种使用注入机的方法。

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