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    • 4. 发明授权
    • Optical integrated device manufacturing process
    • 光学集成器件制造工艺
    • US07998356B2
    • 2011-08-16
    • US12015338
    • 2008-01-16
    • Francesco MartiniDaniela BargeUbaldo Mastromatteo
    • Francesco MartiniDaniela BargeUbaldo Mastromatteo
    • B29D11/00
    • B29D11/00673G02B6/1221G02B6/4214
    • The invention relates to a process for manufacturing an integrated optical device. The method involves forming a silicon dioxide multilayer structure on a silicon substrate containing, in a first region a core layer of a waveguide of the optical device. The core includes an electromagnetic radiation inlet/outlet A trench in a second region of the multilayer structure adjacent said first region is formed by a an anisotropic etching, the trench including side walls and a bottom wall spaced from the Substrate. The method further involves forming a coating layer of the side walls and the bottom wall of the trench; defining an opening in the bottom wall by at least partially removing the coating layer in order to expose the lower silicon dioxide of the multilayer structure; performing an isotropic etch through said opening in order to remove, starting from the exposed silicon dioxide, the multilayer structure silicon dioxide until forming a recess in the multilayer structure having a first wall at least one essentially planar portion inclined relative to the substrate. Such inclined portion extends at least partially in the first region, and includes the inlet/outlet port.
    • 本发明涉及一种用于制造集成光学装置的方法。 该方法包括在硅衬底上形成二氧化硅多层结构,该硅衬底在第一区域中包含光学器件的波导的芯层。 核心包括电磁辐射入口/出口。 通过各向异性蚀刻形成与所述第一区相邻的所述多层结构的第二区域中的沟槽,所述沟槽包括侧壁和与所述基板间隔开的底壁。 该方法还包括形成沟槽的侧壁和底壁的涂层; 通过至少部分地去除所述涂层来限定所述底壁中的开口,以暴露所述多层结构的较低二氧化硅; 通过所述开口执行各向同性蚀刻,以从所述暴露的二氧化硅开始,从所述多层结构二氧化硅移除所述多层结构,直到在所述多层结构中形成具有第一壁的凹部,所述第一壁至少一个相对于所述衬底倾斜的基本上平面的部分。 这种倾斜部分至少部分地在第一区域中延伸,并且包括入口/出口。
    • 5. 发明申请
    • OPTICAL INTEGRATED DEVICE MANUFACTURING PROCESS
    • 光学集成设备制造工艺
    • US20090308839A1
    • 2009-12-17
    • US12015338
    • 2008-01-16
    • Francesco MartiniDaniela BargeUbaldo Mastromatteo
    • Francesco MartiniDaniela BargeUbaldo Mastromatteo
    • B29D11/00
    • B29D11/00673G02B6/1221G02B6/4214
    • The invention relates to a process for manufacturing an integrated optical device. The method involves forming a silicon dioxide multilayer structure on a silicon substrate containing, in a first region a core layer of a waveguide of the optical device. The core includes an electromagnetic radiation inlet/outlet A trench in a second region of the multilayer structure adjacent said first region is formed by a an anisotropic etching, the trench including side walls and a bottom wall spaced from the Substrate. The method further involves forming a coating layer of the side walls and the bottom wall of the trench; defining an opening in the bottom wall by at least partially removing the coating layer in order to expose the lower silicon dioxide of the multilayer structure; performing an isotropic etch through said opening in order to remove, starting from the exposed silicon dioxide, the multilayer structure silicon dioxide until forming a recess in the multilayer structure having a first wall at least one essentially planar portion inclined relative to the substrate. Such inclined portion extends at least partially in the first region, and includes the inlet/outlet port.
    • 本发明涉及一种用于制造集成光学装置的方法。 该方法包括在硅衬底上形成二氧化硅多层结构,该硅衬底在第一区域中包含光学器件的波导的芯层。 核心包括电磁辐射入口/出口。 通过各向异性蚀刻形成与所述第一区相邻的所述多层结构的第二区域中的沟槽,所述沟槽包括侧壁和与所述基板间隔开的底壁。 该方法还包括形成沟槽的侧壁和底壁的涂层; 通过至少部分地去除所述涂层来限定所述底壁中的开口,以暴露所述多层结构的较低二氧化硅; 通过所述开口执行各向同性蚀刻,以从所述暴露的二氧化硅开始,从所述多层结构二氧化硅移除所述多层结构,直到在所述多层结构中形成具有第一壁的凹部,所述第一壁至少一个相对于所述衬底倾斜的基本上平面的部分。 这种倾斜部分至少部分地在第一区域中延伸,并且包括入口/出口。
    • 10. 发明申请
    • SILICON ELECTROSTATIC MICROMOTOR WITH INDENTATIONS, IN PARTICULAR FOR PROBE-STORAGE SYSTEMS
    • 具有指示性,特别是探针存储系统的硅电极微型电机
    • US20100026137A1
    • 2010-02-04
    • US12533835
    • 2009-07-31
    • Bruno MurariUbaldo MastromatteoGiulio Ricotti
    • Bruno MurariUbaldo MastromatteoGiulio Ricotti
    • H02N11/00
    • H02N1/004
    • In an electrostatic micromotor, a mobile substrate faces a fixed substrate, and electrostatic-interaction elements are provided to allow a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement. The electrostatic-interaction elements include electrodes arranged on a facing surface of the fixed substrate (2) facing the mobile substrate. The mobile substrate has indentations, which extend within the mobile substrate starting from a respective facing surface that faces the fixed substrate and define between them projections staggered with respect to the electrodes in the direction of movement. Side walls of the indentations have a first distance of separation at the respective facing surface, and a second distance of separation, greater than the first distance of separation, at an internal region of the indentations.
    • 在静电微电机中,移动衬底面向固定衬底,并且提供静电相互作用元件以允许移动衬底相对于固定衬底在移动方向上的相对移动。 静电相互作用元件包括布置在面向移动基板的固定基板(2)的面对表面上的电极。 移动基板具有凹槽,其从移动基板的相对面朝向固定基板开始并且在它们之间限定在移动方向上相对于电极交错的凸起之间延伸的移动基板。 凹陷的侧壁在相应的相对表面处具有第一分离距离,并且在凹陷的内部区域处具有大于分离距离的第二距离。