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1. 发明申请

US20110316121A1 METHOD FOR MANUFACTURING TRENCH TYPE SUPERJUNCTION DEVICE AND TRENCH TYPE SUPERJUNCTION DEVICE 有权
标题翻译：制造TRENCH型超级装置和TRENCH型超级装置的方法
公开(公告)号：US20110316121A1
公开(公告)日：2011-12-29
申请号：US13167450
申请日：2011-06-23
申请人： Fei Wang , Shengan Xiao , Wensheng Qian
发明人： Fei Wang , Shengan Xiao , Wensheng Qian
IPC分类号： H01L21/20 , H01L29/06
CPC分类号： H01L21/26513 , H01L21/26586 , H01L29/0634 , H01L29/1095 , H01L29/66712 , H01L29/7802 , H01L29/7811
摘要： A method for manufacturing trench type super junction device is disclosed. The method includes the step of forming one or more P type implantation regions in the N type epitaxial layer below the bottom of each trench. By using this method, a super junction device having alternating P type and N type regions is produced, wherein the P type region is formed by P type silicon filled in the trench and P type implantation regions below the trench. The present invention can greatly improve the breakdown voltage of a super junction MOSFET.
摘要翻译：公开了一种用于制造沟槽型超结装置的方法。该方法包括在每个沟槽的底部下方的N型外延层中形成一个或多个P型注入区的步骤。通过使用该方法，制造具有交替的P型和N型区域的超接合器件，其中P型区域由填充在沟槽中的P型硅和沟槽下方的P型注入区域形成。本发明可以大大提高超结MOSFET的击穿电压。

2. 发明授权

US08716111B2 Method for manufacturing trench type superjunction device and trench type superjunction device 有权
标题翻译：沟槽式超导装置及沟槽式超导装置的制造方法
公开(公告)号：US08716111B2
公开(公告)日：2014-05-06
申请号：US13167450
申请日：2011-06-23
申请人： Fei Wang , Shengan Xiao , Wensheng Qian
发明人： Fei Wang , Shengan Xiao , Wensheng Qian
IPC分类号： H01L21/20
CPC分类号： H01L21/26513 , H01L21/26586 , H01L29/0634 , H01L29/1095 , H01L29/66712 , H01L29/7802 , H01L29/7811
摘要： A method for manufacturing trench type super junction device is disclosed. The method includes the step of forming one or more P type implantation regions in the N type epitaxial layer below the bottom of each trench. By using this method, a super junction device having alternating P type and N type regions is produced, wherein the P type region is formed by P type silicon filled in the trench and P type implantation regions below the trench. The present invention can greatly improve the breakdown voltage of a super junction MOSFET.
摘要翻译：公开了一种用于制造沟槽型超结装置的方法。该方法包括在每个沟槽的底部下方的N型外延层中形成一个或多个P型注入区的步骤。通过使用该方法，制造具有交替的P型和N型区域的超接合器件，其中P型区域由填充在沟槽中的P型硅和沟槽下方的P型注入区域形成。本发明可以大大提高超结MOSFET的击穿电压。

3. 发明申请

US20110241110A1 TERMINAL STRUCTURE FOR SUPERJUNCTION DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：用于超级装置的终端结构及其制造方法
公开(公告)号：US20110241110A1
公开(公告)日：2011-10-06
申请号：US13076289
申请日：2011-03-30
申请人： Shengan Xiao , Fei Wang , Yanping Liu
发明人： Shengan Xiao , Fei Wang , Yanping Liu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/7811
摘要： A terminal structure for superjunction device is disclosed. The terminal structure comprises from inside out at least one P type implantation ring and several P type trench rings formed in an N type epitaxial layer to form alternating P type and N type regions. A channel cut-off ring is formed at the border of the device. The P type implantation ring is formed adjacent to the active area of the device and covers at least one trench ring. A terminal dielectric layer is formed to cover the P type implantation ring and the trench rings. A plurality of field plates are formed above the terminal dielectric layer. Methods of manufacturing terminal structure are also disclosed.
摘要翻译：公开了一种超结装置的端子结构。端子结构包括至少一个P型注入环和形成在N型外延层中的多个P型沟槽，以形成交替的P型和N型区。在设备的边界处形成通道切断环。 P型注入环邻近器件的有源区形成并且覆盖至少一个沟槽环。形成端子电介质层以覆盖P型注入环和沟槽环。多个场板形成在端子电介质层的上方。还公开了端子结构的制造方法。

4. 发明授权

US08546882B2 Terminal structure for superjunction device and method of manufacturing the same 有权
标题翻译：超结装置的端子结构及其制造方法
公开(公告)号：US08546882B2
公开(公告)日：2013-10-01
申请号：US13076289
申请日：2011-03-30
申请人： Shengan Xiao , Fei Wang , Yanping Liu
发明人： Shengan Xiao , Fei Wang , Yanping Liu
IPC分类号： H01L21/331
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/7811
摘要： A terminal structure for superjunction device is disclosed. The terminal structure comprises from inside out at least one P type implantation ring and several P type trench rings formed in an N type epitaxial layer to form alternating P type and N type regions. A channel cut-off ring is formed at the border of the device. The P type implantation ring is formed adjacent to the active area of the device and covers at least one trench ring. A terminal dielectric layer is formed to cover the P type implantation ring and the trench rings. A plurality of field plates are formed above the terminal dielectric layer. Methods of manufacturing terminal structure are also disclosed.
摘要翻译：公开了一种超结装置的端子结构。端子结构包括至少一个P型注入环和形成在N型外延层中的多个P型沟槽，以形成交替的P型和N型区。在设备的边界处形成通道切断环。 P型注入环邻近器件的有源区形成并且覆盖至少一个沟槽环。形成端子电介质层以覆盖P型注入环和沟槽环。多个场板形成在端子电介质层的上方。还公开了端子结构的制造方法。

5. 外观设计

USD985928S1 Sandbag 有权
公开(公告)号：USD985928S1
公开(公告)日：2023-05-16
申请号：US29881670
申请日：2023-01-05
申请人： Fei Wang
设计人： Fei Wang
摘要： FIG. 1 is a first perspective view of a sandbag showing my new design;
FIG. 2 is a second perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a back view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top view thereof;
FIG. 8 is a bottom view thereof;
FIG. 9 is an enlarged view of the selected portion 9 in FIG. 1;
FIG. 10 is an enlarged view of the selected portion 10 in FIG. 2; and,
FIG. 11 is an enlarged view of the selected portion 11 in FIG. 4.
The broken lines shown in the drawings depict portions of the sandbag that form no part of the claimed design.
The dash-dot-dash broken lines depict cut lines of the enlarged portions and form no part of the claimed design.

6. 发明申请

US20220178076A1 Fibrous Structures 有权
公开(公告)号：US20220178076A1
公开(公告)日：2022-06-09
申请号：US17521174
申请日：2021-11-08
申请人： Fei Wang , Douglas Jay Barkey , James Allen Cain , Stephen John DelVecchio , Angela Marie Leimbach , Kun Piao , James Kenneth Comer , Ryan Dominic Maladen
发明人： Fei Wang , Douglas Jay Barkey , James Allen Cain , Stephen John DelVecchio , Angela Marie Leimbach , Kun Piao , James Kenneth Comer , Ryan Dominic Maladen
IPC分类号： D21F11/00 , D21H27/00 , D21H27/02 , D21F1/10 , D21F3/04 , D21F5/04 , D21F5/18 , D21F9/02 , D21H25/00
摘要： A fibrous structure. The structure may include a plurality of continuous or semi-continuous knuckles extending from portions of the surface of the fibrous structure in a parallel path, wherein the plurality of knuckles may be separated by adjacent continuous or semi-continuous pillows. Each knuckle may comprise a plurality of discrete pillows, the plurality of discrete pillows may be arranged in a spaced configuration along the path of each knuckle; alternatively, each pillow may comprise a plurality of discrete knuckles, the plurality of discrete knuckles may be arranged in a spaced configuration along the path of each pillow.

7. 发明授权

US10038089B2 SGT MOSFET with adjustable CRSS and CISS 有权
公开(公告)号：US10038089B2
公开(公告)日：2018-07-31
申请号：US14957570
申请日：2015-12-02
申请人： Jun Hu , Zhiyun Luo , Fei Wang , Mengyu Pan
发明人： Jun Hu , Zhiyun Luo , Fei Wang , Mengyu Pan
IPC分类号： H01L29/66 , H01L29/78 , H01L21/32 , H01L29/10 , H01L29/40 , H01L21/3213
CPC分类号： H01L29/7813 , H01L21/32139 , H01L29/1095 , H01L29/401 , H01L29/407 , H01L29/42372 , H01L29/66734 , H01L29/7811
摘要： A semiconductor power device includes a plurality of power transistor cells each having a trenched gate disposed in a gate trench opened in a semiconductor substrate wherein a plurality of the trenched gates further include a shielded bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed at a top portion of the gate trench by an inter-electrode insulation layer. At least one of the shielded bottom electrode is connected a source metal and at least one of the top electrodes in the gate trench is connected to a source metal of the power device.

8. 发明授权

US10010847B2 Circulating fluidized bed with moving bed downcomers and gas sealing between reactors 有权
公开(公告)号：US10010847B2
公开(公告)日：2018-07-03
申请号：US13883795
申请日：2011-11-08
申请人： Liang-Shih Fan , Fanxing Li , Fei Wang , Andrew S. Tong , Surya B. R. Karri , John G. Findlay , Ted M. Knowlton , Raymond A. Cocco
发明人： Liang-Shih Fan , Fanxing Li , Fei Wang , Andrew S. Tong , Surya B. R. Karri , John G. Findlay , Ted M. Knowlton , Raymond A. Cocco
IPC分类号： B01J8/08 , B01J8/12 , B01J8/26 , B01J8/00 , B01J8/18 , B01J8/28 , B01J8/38 , C01B3/06 , C01B3/10
CPC分类号： B01J8/26 , B01J8/0055 , B01J8/006 , B01J8/087 , B01J8/125 , B01J8/1836 , B01J8/1872 , B01J8/28 , B01J8/388 , B01J2208/00389 , B01J2208/00495 , B01J2208/00504 , B01J2208/00539 , B01J2208/00548 , B01J2208/0061 , B01J2208/0084 , C01B3/063 , C01B3/105 , Y02E60/36 , Y10T137/0318
摘要： A system and process for carrying out one or more chemical reactions are provided and include one or more chemical reactors having particulate solids forming a bed therein, and a gas stripping zone forming a non-mechanical seal between said reactors which includes a conduit connecting the reactors. The conduit includes an inlet for a stripping gas which is adapted to prevent process gas from passing between reactors while permitting particulate solids to pass between reactors.

9. 发明授权

US09270198B2 Control of parallel-connected current source rectifiers 有权
标题翻译：并联电流源整流器的控制
公开(公告)号：US09270198B2
公开(公告)日：2016-02-23
申请号：US14204403
申请日：2014-03-11
申请人： Leon Monroe Tolbert , Ben Guo , Fan Xu , Fei Wang , Benjamin J. Blalock
发明人： Leon Monroe Tolbert , Ben Guo , Fan Xu , Fei Wang , Benjamin J. Blalock
IPC分类号： H02M7/219 , H02M7/23 , H02M7/217
CPC分类号： H02M7/219 , H02M1/4208 , H02M7/04 , H02M7/217 , H02M7/23 , H02M2007/2195 , Y02B70/1408
摘要： A three-phase alternating current (AC) to direct current (DC) converter may include a three-phase AC filter receiving a three-phase AC power supply, a plurality of three-phase current source rectifiers (CSR) connected in parallel with each other and connected to a three-phase AC filter, and an output filter connected to the CSR's to generate a DC output. Each of the CSRs may include six switches and a free-wheeling diode. Each of the three filtered AC inputs from the three-phase AC filter may be connected via a switch of the six switches to selectably send current into a positive line, and each of three filtered AC inputs from the three-phase AC filter may be connected via another switch of the six switches to selectably receive current from a negative line. The free-wheeling diode may have a cathode connected to the positive line and an anode connected to the negative line.
摘要翻译：直流（DC）转换器的三相交流电（AC）可以包括接收三相交流电源的三相交流滤波器，与每一相并联连接的多个三相电流源整流器（CSR）连接到三相交流滤波器，连接到CSR的输出滤波器产生直流输出。每个CSR可以包括六个开关和一个续流二极管。来自三相AC滤波器的三个滤波的AC输入中的每一个可以经由六个开关的开关连接，以可选择地将电流发送到正线中，并且来自三相AC滤波器的三个滤波的AC输入中的每一个可以被连接通过六个开关的另一开关可选地从负线接收电流。续流二极管可以具有连接到正极线的阴极和连接到负极线的阳极。

10. 发明授权

US09155823B2 Determining dialysis treatment effectiveness 有权
标题翻译：确定透析治疗有效性
公开(公告)号：US09155823B2
公开(公告)日：2015-10-13
申请号：US13214519
申请日：2011-08-22
申请人： Jeffrey Tarn , Fei Wang , Aiyuan Wang
发明人： Jeffrey Tarn , Fei Wang , Aiyuan Wang
IPC分类号： A61M1/16 , B01D61/30 , B01D61/32 , A61M1/28
CPC分类号： A61M1/16 , A61M1/1601 , A61M1/1603 , A61M1/1611 , A61M1/28 , A61M2202/0498 , A61M2205/15 , A61M2205/50 , A61M2205/502 , A61M2205/505 , A61M2205/52 , B01D61/30 , B01D61/32
摘要： A method performed on a dialysis machine includes receiving a first value that represents a pre-dialysis body weight of a patient and receiving a second value that represents a volume of liquid (V) inside a body of the patient. The method also includes administering dialysis to the patient, calculating an instantaneous body weight (W) of the patient based at least in part on the first value, determining a length of time (t) for which the dialysis was administered to the patient, determining a dialyzer clearance (K) associated with the dialysis, and calculating, based at least in part on the length of time, the instantaneous body weight, the volume, and the dialyzer clearance, a urea reduction ratio (URR) associated with the dialysis.
摘要翻译：在透析机上执行的方法包括接收表示患者的透析前体重的第一值，并接收表示患者体内的液体体积（V）的第二值。该方法还包括对患者进行透析，至少部分地基于第一值计算患者的瞬时体重（W），确定向患者施用透析的时间长度（t），确定与透析相关联的透析器间隙（K），并且至少部分地基于时间长度计算瞬时体重，体积和透析器间隙，与透析相关联的尿素减少率（URR）。

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