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1. 发明授权

US09052402B2 Detector element, radiation detector and medical device containing the detector elements, and method for producing a detector element 有权
标题翻译：检测器元件，放射线检测器和包含检测器元件的医疗装置，以及用于产生检测器元件的方法
公开(公告)号：US09052402B2
公开(公告)日：2015-06-09
申请号：US13590622
申请日：2012-08-21
申请人： Fabrice Dierre , Matthias Strassburg
发明人： Fabrice Dierre , Matthias Strassburg
IPC分类号： G01T1/24 , H01L31/0224 , H01L31/08
CPC分类号： G01T1/241 , H01L31/0224 , H01L31/085
摘要： A detector element is disclosed with a semi-conductive converter element and metal contacts arranged thereon for at least one anode and at least one cathode, wherein at least one of the metal contacts comprises a contact layer made from a contact material based on precious metal and ruthenium as its mixed component. Moreover, an embodiment of the invention concerns a radiation detector with the detector element with a ruthenium-containing contact layer and, optionally, with an evaluation unit to read out a detector signal, as well as a medical device with the radiation detector. Furthermore, a method for the production of a detector element is described which includes the installation step of a contact material of at least one of the metal contacts on the converter element, wherein the contact material includes a precious metal base with ruthenium as its mixed component.
摘要翻译：公开了一种检测器元件，其具有用于至少一个阳极和至少一个阴极的半导体转换器元件和金属触点，其中至少一个金属触点包括由基于贵金属的接触材料制成的接触层，以及钌作为其混合组分。此外，本发明的实施例涉及具有含钌接触层的检测器元件的放射线检测器，并且可选地涉及用于读出检测器信号的评估单元以及具有辐射检测器的医疗装置。此外，描述了一种用于生产检测器元件的方法，其包括在转换器元件上的至少一个金属接触件的接触材料的安装步骤，其中接触材料包括贵金属基底和钌作为其混合成分。

2. 发明申请

US20120045868A1 SEMICONDUCTOR DEVICE CONTACTS 有权
标题翻译：半导体器件联系人
公开(公告)号：US20120045868A1
公开(公告)日：2012-02-23
申请号：US13258849
申请日：2010-05-18
申请人： Mohamed Ayoub , Fabrice Dierre
发明人： Mohamed Ayoub , Fabrice Dierre
IPC分类号： H01L21/06
CPC分类号： H01L29/2203 , H01L29/45
摘要： A method of fabrication of electrical contact structures on a semiconductor material is described comprising the steps of: depositing an oxide of a desired contact material by a chemical electroless process on a face of the semiconductor material; and reducing the oxide via a chemical electroless process to produce a contact of the desired contact material. A method of fabrication of a semiconductor device incorporating such electrical contact structures and a semiconductor device incorporating such electrical contact structures are also described.
摘要翻译：描述了一种在半导体材料上制造电接触结构的方法，包括以下步骤：通过化学无电镀方法在半导体材料的表面上沉积所需接触材料的氧化物; 以及通过化学无电解方法还原氧化物以产生所需接触材料的接触。还描述了包括这种电接触结构的半导体器件的制造方法以及包含这种电接触结构的半导体器件。

3. 发明授权

US08563434B2 Semiconductor device contacts 有权
标题翻译：半导体器件触点
公开(公告)号：US08563434B2
公开(公告)日：2013-10-22
申请号：US13258849
申请日：2010-05-18
申请人： Mohamed Ayoub , Fabrice Dierre
发明人： Mohamed Ayoub , Fabrice Dierre
IPC分类号： H01L21/44
CPC分类号： H01L29/2203 , H01L29/45
摘要： A method of fabrication of electrical contact structures on a semiconductor material includes depositing an oxide of a desired contact material by a chemical electroless process on a face of the semiconductor material and reducing the oxide via a chemical electroless process to produce a contact of the desired contact material. A method of fabrication of a semiconductor device incorporating such electrical contact structures and a semiconductor device incorporating such electrical contact structures are also described.
摘要翻译：在半导体材料上制造电接触结构的方法包括通过化学无电镀方法在半导体材料的表面上沉积所需接触材料的氧化物，并通过化学无电解方法还原氧化物以产生所需接触的接触材料。还描述了包括这种电接触结构的半导体器件的制造方法以及包含这种电接触结构的半导体器件。

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