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1. 发明申请

US20120238473A1 Molecular sensor using temporal discrimination 审中-公开
标题翻译：分子传感器使用时间歧视
公开(公告)号：US20120238473A1
公开(公告)日：2012-09-20
申请号：US13420133
申请日：2012-03-14
申请人： Evelyne Gridelet , Hilco Suy , Filip Frederix
发明人： Evelyne Gridelet , Hilco Suy , Filip Frederix
IPC分类号： C40B40/00 , B82Y15/00
CPC分类号： G01N33/557 , G01N27/127 , G01N33/5438
摘要： A sensor device is disclosed, which depends on discrimination in time between groups of binding events of target particles to nano-electrodes. The target particles may be in the liquid phase or in suspension. The nano-electrodes form part of a sensor arrangement having a plurality of sensors. The sensor device is arranged such that different species of target particles arrive at the nano-electrodes at different times, using techniques such as chromatography or application of a field such as an electric, magnetic, or gravitational field. The particles may be labelled or unlabeled. The invention is particularly suited, but not limited, to sensing bioparticles.
摘要翻译：公开了一种传感器装置，其取决于目标颗粒与纳米电极的结合事件组之间的时间差异。目标颗粒可以是液相或悬浮液。纳米电极形成具有多个传感器的传感器装置的一部分。传感器装置布置成使得不同种类的目标颗粒在不同时间到达纳米电极，使用诸如色谱法或诸如电，磁场或重力场的场的应用的技术。颗粒可以被标记或未标记。本发明特别适用于但不限于感测生物颗粒。

2. 发明授权

US08872237B2 Heterojunction bipolar transistor manufacturing method and integrated circuit comprising a heterojunction bipolar transistor 有权
标题翻译：异质结双极晶体管制造方法和包括异质结双极晶体管的集成电路
公开(公告)号：US08872237B2
公开(公告)日：2014-10-28
申请号：US13299755
申请日：2011-11-18
申请人： Tony Vanhoucke , Johannes Josephus Theodorus Marinus Donkers , Hans Mertens , Blandine Duriez , Evelyne Gridelet
发明人： Tony Vanhoucke , Johannes Josephus Theodorus Marinus Donkers , Hans Mertens , Blandine Duriez , Evelyne Gridelet
IPC分类号： H01L29/66 , H01L29/737 , H01L29/08
CPC分类号： H01L29/0821 , H01L29/66242 , H01L29/7378
摘要： Disclosed is a method of manufacturing a heterojunction bipolar transistor comprising a substrate, an upper region of said substrate comprising an active region of the bipolar transistor bordered by shallow trench insulation, said active region comprising a buried collector region extending to a depth beyond the depth of the shallow trench insulation, the method comprising forming a trench in the substrate adjacent to said active region, said trench extending through the shallow trench insulation; at least partially filling said trench with an impurity; and forming a collector sinker in the substrate by developing said impurity to extend into the substrate to a depth beyond the depth of the shallow trench insulation. An IC comprising a heterojunction bipolar transistor manufactured by this method is also disclosed.
摘要翻译：公开了一种制造包括衬底的异质结双极晶体管的方法，所述衬底的上部区域包括由浅沟槽绝缘体界定的双极晶体管的有源区，所述有源区包括延伸到超过深度所述浅沟槽绝缘体，所述方法包括在所述衬底中邻近所述有源区形成沟槽，所述沟槽延伸穿过所述浅沟槽绝缘体; 至少部分地用杂质填充所述沟槽; 以及通过使所述杂质显影而在衬底中形成收集器沉降片，以延伸到衬底中深度超过浅沟槽绝缘深度的深度。还公开了一种包括通过该方法制造的异质结双极晶体管的IC。

3. 发明申请

US20120132961A1 HETEROJUNCTION BIPOLAR TRANSISTOR MANUFACTURING METHOD AND INTEGRATED CIRCUIT COMPRISING A HETEROJUNCTION BIPOLAR TRANSISTOR 有权
标题翻译：异相双极晶体管制造方法和包含异相双极晶体管的集成电路
公开(公告)号：US20120132961A1
公开(公告)日：2012-05-31
申请号：US13299755
申请日：2011-11-18
申请人： Tony Vanhoucke , Johannes Josephus Theodorus Marinus Donkers , Hans Mertens , Blandine Duriez , Evelyne Gridelet
发明人： Tony Vanhoucke , Johannes Josephus Theodorus Marinus Donkers , Hans Mertens , Blandine Duriez , Evelyne Gridelet
IPC分类号： H01L29/737 , H01L21/328
CPC分类号： H01L29/0821 , H01L29/66242 , H01L29/7378
摘要： Disclosed is a method of manufacturing a heterojunction bipolar transistor comprising a substrate, an upper region of said substrate comprising an active region of the bipolar transistor bordered by shallow trench insulation, said active region comprising a buried collector region extending to a depth beyond the depth of the shallow trench insulation, the method comprising forming a trench in the substrate adjacent to said active region, said trench extending through the shallow trench insulation; at least partially filling said trench with an impurity; and forming a collector sinker in the substrate by developing said impurity to extend into the substrate to a depth beyond the depth of the shallow trench insulation. An IC comprising a heterojunction bipolar transistor manufactured by this method is also disclosed.
摘要翻译：公开了一种制造包括衬底的异质结双极晶体管的方法，所述衬底的上部区域包括由浅沟槽绝缘体界定的双极晶体管的有源区，所述有源区包括延伸到超过深度所述浅沟槽绝缘体，所述方法包括在所述衬底中邻近所述有源区形成沟槽，所述沟槽延伸穿过所述浅沟槽绝缘体; 至少部分地用杂质填充所述沟槽; 以及通过使所述杂质显影而在衬底中形成收集器沉降片，以延伸到衬底中深度超过浅沟槽绝缘深度的深度。还公开了一种包括通过该方法制造的异质结双极晶体管的IC。

4. 发明申请

US20110027128A1 SENSOR CHIP AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：传感器芯片及其制造方法
公开(公告)号：US20110027128A1
公开(公告)日：2011-02-03
申请号：US12934827
申请日：2009-03-19
申请人： Evelyne Gridelet , Franciscus Widdershoven , Pablo Garcia Tello , Magali Lambert
发明人： Evelyne Gridelet , Franciscus Widdershoven , Pablo Garcia Tello , Magali Lambert
IPC分类号： G01N27/00 , B05D5/12
CPC分类号： G01N33/5438 , G01N27/226
摘要： A sensor chip (100) for detecting particles, the sensor chip (100) comprising a substrate (102), an electric connection structure (104) arranged in a surface portion of the substrate (102) and adapted for an electric connection to an electric connection element (106), a sensor active region (108) arranged in another surface portion of the substrate (102) and being sensitive to the presence of the particles to be detected, and a continuous dielectric layer (110) covering the substrate (102) including covering the electric connection structure (104) and the sensor active region (108).
摘要翻译：一种用于检测颗粒的传感器芯片（100），所述传感器芯片（100）包括基板（102），电连接结构（104），布置在所述基板（102）的表面部分中，并且适于电连接到电连接元件（106），布置在所述基板（102）的另一表面部分中并且对待检测的颗粒的存在敏感的传感器有源区域（108）以及覆盖所述基板（102）的连续介电层（110））包括覆盖电连接结构（104）和传感器有源区（108）。

5. 发明授权

US09206794B2 Microfluidic pump with metal electrode having variable oxidation state 有权
标题翻译：具有可变氧化态的金属电极的微流量泵
公开(公告)号：US09206794B2
公开(公告)日：2015-12-08
申请号：US12989012
申请日：2009-04-22
申请人： Evelyne Gridelet
发明人： Evelyne Gridelet
IPC分类号： F04B19/00 , B01L3/00
CPC分类号： F04B19/006 , B01L3/50273 , B01L2300/0645 , B01L2400/0421 , B01L2400/0427 , Y10T29/49002
摘要： A microfluidic pump comprises a plurality of metal electrodes (10) which oxidise in air, a liquid droplet (14) to be moved by the pump, which is in contact with a least one metal electrode, and a controller for controlling the oxidation state of the metal electrodes in order to vary the electrode wettability. This arrangement enables full integration with a semiconductor device, and with low drive voltages.
摘要翻译：微流体泵包括在空气中氧化的多个金属电极（10），与至少一个金属电极接触的由泵移动的液滴（14）和用于控制氧化态的控制器金属电极为了改变电极的润湿性。这种布置使得能够与半导体器件完全集成，并且具有低驱动电压。

6. 发明申请

US20110204872A1 PN JUNCTION CHEMICAL SENSOR (originally published as A SENSOR DEVICE AND METHOD OF DETECTING PARTICLES) 有权
标题翻译： PN结化学传感器（最初发表为传感器装置和检测颗粒的方法）
公开(公告)号：US20110204872A1
公开(公告)日：2011-08-25
申请号：US12922665
申请日：2009-03-09
申请人： Evelyne Gridelet , Almudena Huerta , Pierre Goarin , Jan Sonsky
发明人： Evelyne Gridelet , Almudena Huerta , Pierre Goarin , Jan Sonsky
IPC分类号： G01N27/00 , H01L29/66 , H01L31/118
CPC分类号： H01L29/7391 , G01N27/4145
摘要： A sensor device (100, 2800) for detecting particles, the sensor device (100, 2800) comprising a substrate (102), a first doped region (104) formed in the substrate (102) by a first dopant of a first type of conductivity, a second doped region (106, 150) formed in the substrate (102) by a second dopant of a second type of conductivity which differs from the first type of conductivity, a depletion region (108) at a junction between the first doped region (104) and the second doped region (106, 150), a sensor active region (110) adapted to influence a property of the depletion region (108) in the presence of the particles, and a detection unit (112) adapted to detect the particles based on an electric measurement performed upon application of a predetermined reference voltage between the first doped region (104) and the second doped region (106, 150), the electric measurement being indicative of the presence of the particles in the sensor active region (110).
摘要翻译：一种用于检测颗粒的传感器装置（100,2800），所述传感器装置（100,2800）包括衬底（102），通过第一类型的第一掺杂剂在衬底（102）中形成的第一掺杂区（104）通过与第一类型的导电性不同的第二导电类型的第二掺杂剂形成在衬底（102）中的第二掺杂区（106,150），第一掺杂区区域（104）和第二掺杂区域（106,150），适于在存在颗粒的情况下影响耗尽区（108）的性质的传感器有源区（110），以及适于基于在第一掺杂区域（104）和第二掺杂区域（106,150）之间施加预定参考电压进行的电测量来检测颗粒，电测量表示传感器中存在颗粒活性区域（110）。

7. 发明申请

US20100089135A1 DEVICE AND METHOD FOR MEASURING SENSOR CHIPS 审中-公开
标题翻译：用于测量传感器夹具的装置和方法
公开(公告)号：US20100089135A1
公开(公告)日：2010-04-15
申请号：US12249483
申请日：2008-10-10
申请人： Michel de Langen , Evelyne Gridelet
发明人： Michel de Langen , Evelyne Gridelet
IPC分类号： G01N15/06
CPC分类号： G01N27/3278 , B01L3/502715 , B01L2200/027
摘要： A device and method for measuring a sensor chip with bond pads uses a plurality of conductive elements configured to be sufficiently rigid to penetrate oxidation on the bond pads to electrically connect to the bond pads of the sensor chip to exchange measurement information with the sensor chip.
摘要翻译：用于测量具有接合焊盘的传感器芯片的装置和方法使用多个导电元件，其被配置为足够刚性以在接合焊盘上穿透氧化以电连接到传感器芯片的接合焊盘，以与传感器芯片交换测量信息。

8. 发明申请

US20100052080A1 BIOSENSOR CHIP AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：生物传感器芯片及其制造方法
公开(公告)号：US20100052080A1
公开(公告)日：2010-03-04
申请号：US12595119
申请日：2008-04-22
申请人： Pablo Garcia Tello , Evelyne Gridelet , Franciscus Widdershoven
发明人： Pablo Garcia Tello , Evelyne Gridelet , Franciscus Widdershoven
IPC分类号： H01L27/06 , H01L21/306
CPC分类号： G01N27/3278 , G01N33/5438 , H01L21/768 , H01L21/76883 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A biosensor chip (100) for detecting biological particles, the biosensor chip (100) comprising a sensor active region (101) being sensitive for the biological particles and being arranged in a Back End of the Line portion (102) of the biosensor chip (100).
摘要翻译：一种生物传感器芯片（100），用于检测生物颗粒，所述生物传感器芯片（100）包括对生物体微粒敏感的传感器有源区（101），并且被布置在生物传感器芯片的线部分（102）的后端 100）。

9. 发明授权

US09375711B2 Sensor and a method of assembling a sensor 有权
标题翻译：传感器和组装传感器的方法
公开(公告)号：US09375711B2
公开(公告)日：2016-06-28
申请号：US13043352
申请日：2011-03-08
申请人： Romano Hoofman , Gerard Reuvers , Franciscus Petrus Widdershoven , Evelyne Gridelet , Marcus Henricus van Kleef
发明人： Romano Hoofman , Gerard Reuvers , Franciscus Petrus Widdershoven , Evelyne Gridelet , Marcus Henricus van Kleef
IPC分类号： G01N27/00 , B01L3/00 , G01N27/327
CPC分类号： B01L3/502715 , B01L2200/12 , B01L2300/0645 , G01N27/3275 , Y10T29/49105
摘要： “Click-assembly” methods of assembling a sensor for sensing biologically-active molecules by measuring impedance changes, are disclosed, comprising supporting a bio-sensor on a carrier, the bio-sensor comprising an electronic component having at least one micro-electrode and at least one electrical contact, functionalizing the bio-sensor by physically or chemically coupling a bio-receptor molecule to each of the at least one micro-electrode, and subsequently assembling the bio-sensor with a micro-fluidic unit by means of a clamp which clamps the bio-sensor with the micro-fluidic unit, such that in use a fluid introduced into the micro-fluidic unit is able to contact the bio-receptor and is isolated from the electrical contact. The clamp may be a spring, and the method may avoid a requirement for sealing by chemical or thermal means and thereby avoid damaging the bio-receptor.Sensors which can be assembled according to such methods are also disclosed.
摘要翻译：公开了通过测量阻抗变化来组装用于感测生物活性分子的传感器的“点击组装”方法，其包括在载体上支撑生物传感器，所述生物传感器包括具有至少一个微电极的电子部件和至少一个电接触，通过将所述生物受体分子物理或化学耦合至所述至少一个微电极中的每一个来官能化所述生物传感器，以及随后通过夹具将所述生物传感器与微流体单元组装其利用微流体单元夹持生物传感器，使得在使用中，引入微流体单元的流体能够接触生物接受体并与电接触物隔离。夹具可以是弹簧，并且该方法可以避免通过化学或热方式对密封的要求，从而避免损坏生物受体。还公开了可以根据这些方法组装的传感器。

10. 发明授权

US09018681B2 Method of manufacturing a bipolar transistor and bipolar transistor 有权
标题翻译：制造双极晶体管和双极晶体管的方法
公开(公告)号：US09018681B2
公开(公告)日：2015-04-28
申请号：US13303099
申请日：2011-11-22
申请人： Evelyne Gridelet , Tony Vanhoucke , Johannes Josephus Theodorus Marinus Donkers , Hans Mertens , Blandine Duriez
发明人： Evelyne Gridelet , Tony Vanhoucke , Johannes Josephus Theodorus Marinus Donkers , Hans Mertens , Blandine Duriez
IPC分类号： H01L29/732 , H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/10 , H01L29/66
CPC分类号： H01L21/8249 , H01L27/0623 , H01L29/0813 , H01L29/1004 , H01L29/66287 , H01L29/7322
摘要： Consistent with an example embodiment, there is method of manufacturing a bipolar transistor comprising providing a substrate including an active region; depositing a layer stack; forming a base window over the active region in said layer stack; forming at least one pillar in the base window, wherein a part of the pillar is resistant to polishing; depositing an emitter material over the resultant structure, thereby filling said base window; and planarizing the deposited emitter material by polishing. Consistent with another example embodiment, a bipolar transistor may be manufactured according to the afore-mentioned method.
摘要翻译：与示例实施例一致，存在制造双极晶体管的方法，其包括提供包括有源区的衬底; 沉积层叠; 在所述层叠层中的有源区上形成基窗; 在所述基窗中形成至少一个支柱，其中，所述支柱的一部分抵抗抛光; 在所得结构上沉积发射体材料，从而填充所述基窗; 并通过研磨平坦化沉积的发射体材料。根据另一示例性实施例，可以根据上述方法制造双极晶体管。

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