专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06452228B1 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US06452228B1
公开(公告)日：2002-09-17
申请号：US09626741
申请日：2000-07-26
申请人： Eiichi Okuno , Takeshi Endo , Kunihiko Hara
发明人： Eiichi Okuno , Takeshi Endo , Kunihiko Hara
IPC分类号： H01L2348
CPC分类号： H01L29/0696 , H01L21/049 , H01L29/045 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/7802 , H01L29/7813 , H01L29/7838 , H01L2924/0002 , H01L2924/00
摘要： A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1×1015 cm−3. Accordingly, when a gate oxide film is formed on the surface channel layer, an amount of silicon nitride produced in the gate oxide film and at the interface between the gate oxide film and the surface channel layer becomes extremely small. As a result, carrier traps are prevented from being produced by silicon nitride, resulting in stable FET characteristics and high reliability to the gate oxide film.
摘要翻译：由碳化硅制成的垂直型功率MOSFET包括掺杂有氮作为掺杂剂的表面沟道层，其浓度等于或小于1×10 15 cm -3。因此，当在表面沟道层上形成栅极氧化膜时，在栅极氧化膜中产生的氮化硅的量和栅氧化膜与表面沟道层之间的界面变得非常小。结果，阻止了由氮化硅产生载流子阱，从而导致稳定的FET特性和对栅氧化膜的高可靠性。

2. 发明授权

US06573534B1 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US06573534B1
公开(公告)日：2003-06-03
申请号：US09265582
申请日：1999-03-10
申请人： Rajesh Kumar , Tsuyoshi Yamamoto , Shoichi Onda , Mitsuhiro Kataoka , Kunihiko Hara , Eiichi Okuno , Jun Kojima
发明人： Rajesh Kumar , Tsuyoshi Yamamoto , Shoichi Onda , Mitsuhiro Kataoka , Kunihiko Hara , Eiichi Okuno , Jun Kojima
IPC分类号： H01L310312
CPC分类号： H01L29/7828 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/7802 , H01L29/7838 , Y10S438/931
摘要： A semiconductor device, comprising: a semiconductor substrate comprising silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type; a first semiconductor region formed on the semiconductor substrate and comprising silicon carbide of a second conductivity type; a second semiconductor region formed on the first semiconductor region, comprising silicon carbide of the first conductivity type and separated from the semiconductor substrate of the first conductivity type by the first semiconductor region; a third semiconductor region formed on the semiconductor region, connected to the semiconductor substrate and the second semiconductor region, comprising silicon carbide of the first conductivity type, and of higher resistance than the semiconductor substrate; and a gate electrode formed on the third semiconductor region via an insulating layer; wherein the third semiconductor layer is depleted when no voltage is being applied to the gate electrode so that said semiconductor device has a normally OFF characteristic.
摘要翻译：一种半导体器件，包括：包含第一导电类型的碳化硅的半导体衬底; 第一导电类型的碳化硅外延层; 形成在所述半导体衬底上并且包括第二导电类型的碳化硅的第一半导体区域; 形成在所述第一半导体区域上的第二半导体区域，包括所述第一导电类型的碳化硅并且通过所述第一半导体区域与所述第一导电类型的半导体衬底分离; 形成在所述半导体区域上的第三半导体区域，与所述半导体衬底和所述第二半导体区域连接，所述第二半导体区域包括所述第一导电型的碳化硅，并且具有比所述半导体衬底更高的电阻; 以及经由绝缘层形成在所述第三半导体区域上的栅电极; 其中当没有电压施加到所述栅电极时，所述第三半导体层被耗尽，使得所述半导体器件具有正常OFF特性。

3. 发明申请

US20110079707A1 IMAGE PICKUP ELEMENT PERFORMING IMAGE DETECTION OF HIGH RESOLUTION AND HIGH IMAGE QUALITY AND IMAGE PICKUP APPARATUS INCLUDING THE SAME 有权
标题翻译：图像拾取元件执行高分辨率和高图像质量的图像检测以及包括其中的图像拾取装置
公开(公告)号：US20110079707A1
公开(公告)日：2011-04-07
申请号：US12967604
申请日：2010-12-14
申请人： Kunihiko Hara , Hiroshi Kubo , Yasuyuki Endo , Masatoshi Kimura
发明人： Kunihiko Hara , Hiroshi Kubo , Yasuyuki Endo , Masatoshi Kimura
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14641 , H01L27/14645
摘要： In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.
摘要翻译：在像素部分中，在第一有源区中形成光电二极管和转移晶体管。在第二有源区中，形成复位晶体管。在像素部分中，在第一有源区中形成光电二极管和转移晶体管。在第二有源区中形成放大晶体管。图像像素部分中的第一和第二有源区域的形状分别相同。复位晶体管和放大晶体管由像素部分共享。

4. 发明申请

US20100309356A1 SOLID STATE IMAGING DEVICE AND METHOD FOR DRIVING THE SAME 审中-公开
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US20100309356A1
公开(公告)日：2010-12-09
申请号：US12864674
申请日：2009-01-27
申请人： Isao Ihara , Kunihiko Hara , Makoto Inagaki , Hiroshi Kubo
发明人： Isao Ihara , Kunihiko Hara , Makoto Inagaki , Hiroshi Kubo
IPC分类号： H04N5/335
CPC分类号： H04N5/3658 , H04N5/374 , H04N5/3742
摘要： A solid state imaging device according to an aspect of the present invention includes: a pixel array (21) including pixel units arranged in rows and columns; a vertical shift register (26) which selects one of the rows of the pixel array (21); a column amplifier unit (22) including column amplifiers each of which is provided for a corresponding one of the columns and amplifies a column signal provided from the pixel unit included in the selected row; and a limiting circuit which limits an output voltage of the column amplifier to no more than a predetermined voltage that can be changed, wherein the limiting circuit changes the predetermined voltage according to switching between a normal mode and a high-sensitivity mode.
摘要翻译：根据本发明的一个方面的固态成像装置包括：像素阵列（21），包括以行和列排列的像素单元; 选择像素阵列（21）的行之一的垂直移位寄存器（26）; 列列放大器单元（22），其包括列放大器，每个列放大器用于对应的一列，并放大从包括在所选行中的像素单元提供的列信号; 以及将列放大器的输出电压限制在不大于可以改变的预定电压的限制电路，其中限制电路根据正常模式和高灵敏度模式之间的切换来改变预定电压。

5. 发明授权

US07646891B2 Image processor 失效
标题翻译：图像处理器
公开(公告)号：US07646891B2
公开(公告)日：2010-01-12
申请号：US10529202
申请日：2002-12-26
申请人： Hiroshi Kage , Kunihiko Hara
发明人： Hiroshi Kage , Kunihiko Hara
IPC分类号： G06K9/00 , G06K9/40 , G06K9/36 , H04N5/228 , H04N5/14 , H04N9/64
CPC分类号： H04N5/23277 , G06T5/003 , G06T5/50 , G06T7/20 , G06T2207/20201 , H04N5/23248 , H04N5/23254
摘要： There is provided an image processor and a method thereof for high-speed compensation for taken-image blurs produced by camera shakes or the like. In the first instance, a motion-detecting area is selected for each of two images taken by an image sensor. When projective data is calculated by means of computing in a predetermined direction pixels of the motion-detecting areas, the motion vector between the two images can be acquired based on the projective data. The image correlativity between the two images is then calculated in the direction that the motion vector designates; and the amount of pixel displacement between the two images is calculated based on the correlativity values acquired by the calculation. Moreover, the area that has been produced by displacing an image output area in a camera-shake compensation area designated in the second frame, by the pixel-displacement amount calculated by a displacement calculator is cut away from the camera-shake compensation area, and is outputted as an image for the image output area of the second frame.
摘要翻译：提供了一种用于高速补偿由相机抖动等产生的拍摄图像模糊的图像处理器及其方法。在第一种情况下，对由图像传感器拍摄的两幅图像中的每一幅图像选择运动检测区域。当通过在预定方向上计算运动检测区域的像素来计算投影数据时，可以基于投影数据获取两个图像之间的运动矢量。然后在运动矢量指定的方向上计算两个图像之间的图像相关性; 并且基于通过计算获得的相关性值来计算两个图像之间的像素位移量。此外，通过将在第二帧中指定的相机抖动补偿区域中的图像输出区域移位由位移计算器计算出的像素位移量而产生的区域被切掉相机抖动补偿区域，并且作为第二帧的图像输出区域的图像输出。

6. 发明申请

US20090040346A1 SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS AND DRIVING METHOD FOR THE SAME 有权
标题翻译：固态成像装置，成像装置及其驱动方法
公开(公告)号：US20090040346A1
公开(公告)日：2009-02-12
申请号：US12089289
申请日：2006-08-28
申请人： Masayuki Masuyama , Kunihiko Hara , Masashi Murakami , Shinsuke Nezaki
发明人： Masayuki Masuyama , Kunihiko Hara , Masashi Murakami , Shinsuke Nezaki
IPC分类号： H04N5/335 , H04N5/225
CPC分类号： H04N5/3765 , H04N5/3456
摘要： A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.
摘要翻译：固态成像装置包括第一组像素41，稀疏驱动期间跳过的第二组像素42以及扫描部13.扫描部13驱动第一组像素41中的每一个以执行输出输出的读取操作将累积在光电转换元件中的信号电荷的量信号并初始化为第一电平，并且驱动每个第二组像素42执行将在光电转换元件中累积的信号电荷的量初始化的放电操作，以高于第一电平并低于光电转换元件12的饱和信号电平的第二电平。

7. 发明授权

US07193258B2 Image pickup element performing image detection of high resolution and high image quality and image pickup apparatus including the same 有权
标题翻译：执行高分辨率和高图像质量的图像检测的图像拾取元件以及包括其的图像拾取装置
公开(公告)号：US07193258B2
公开(公告)日：2007-03-20
申请号：US11081950
申请日：2005-03-17
申请人： Kunihiko Hara , Hiroshi Kubo , Yasuyuki Endo , Masatoshi Kimura
发明人： Kunihiko Hara , Hiroshi Kubo , Yasuyuki Endo , Masatoshi Kimura
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14641 , H01L27/14645
摘要： In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.
摘要翻译：在像素部分中，在第一有源区中形成光电二极管和转移晶体管。在第二有源区中，形成复位晶体管。在像素部分中，在第一有源区中形成光电二极管和转移晶体管。在第二有源区中形成放大晶体管。图像像素部分中的第一和第二有源区域的形状分别相同。复位晶体管和放大晶体管由像素部分共享。

8. 发明授权

US5504360A Vertical type semiconductor device provided with an improved construction to greatly decrease device on-resistance without impairing breakdown 失效
标题翻译：垂直型半导体器件具有改进的结构，以大大降低器件导通电阻而不损害击穿
公开(公告)号：US5504360A
公开(公告)日：1996-04-02
申请号：US293421
申请日：1994-08-22
申请人： Norihito Tokura , Kunihiko Hara
发明人： Norihito Tokura , Kunihiko Hara
IPC分类号： H01L29/06 , H01L29/08 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L29/7813 , H01L29/7802 , H01L29/0653 , H01L29/0696 , H01L29/0847 , H01L29/41766
摘要： A vertical type semiconductor device is provided with an improved construction which greatly decreases the on-resistance without impairing the breakdown voltage thereof. In the fundamental DMOS cells that control a current to constitute the vertical semiconductor device, through-hole cells are arranged along the sides of a cell having a channel. The through-hole cell includes a through-hole extending from the surface of an n.sup.- -type drift region toward an n.sup.+ -type drain region, and also includes an n.sup.+ -type through-hole region that is formed by diffusing impurities from the inner wall of the through-hole which is continuous with the n.sup.+ -type drain region. A breakdown voltage of the element is maintained by the n.sup.- -type drift region between a p-type well region and the n.sup.+ -type through-hole region or the n.sup.+ -type drain region. Given the unique arrangement of the through-hole cells, the JFET resistance component becomes negligibly small between the DMOS cells neighboring along the sides of the cells despite the fact that the cells are finely formed, and a small on-resistance is exhibited.
摘要翻译：垂直型半导体器件具有改进的结构，其大大降低导通电阻而不损害其击穿电压。在控制电流以构成垂直半导体器件的基本DMOS单元中，沿着具有沟道的单元的侧面布置有通孔单元。通孔单元包括从n型漂移区域的表面向n +型漏极区域延伸的通孔，还包括通过从内部扩散杂质形成的n +型通孔区域与n +型漏极区连续的通孔的壁。元件的击穿电压由p型阱区域和n +型通孔区域或n +型漏极区域之间的n型漂移区域维持。鉴于通孔单元的独特布置，尽管细胞形成细小，但是出现小的导通电阻，但是JFET电阻分量在沿着单元侧面相邻的DMOS单元之间变得可以忽略不计。

9. 发明授权

US5329271A Semiconductor strain sensor 失效
标题翻译：半导体应变传感器
公开(公告)号：US5329271A
公开(公告)日：1994-07-12
申请号：US878429
申请日：1992-05-04
申请人： Hajime Inuzuka , Tsuyoshi Nakagawa , Kunihiko Hara
发明人： Hajime Inuzuka , Tsuyoshi Nakagawa , Kunihiko Hara
IPC分类号： G01L9/04 , G01L1/18 , G01L9/00 , G01P15/12 , H01L29/84 , G01L1/22
CPC分类号： G01L1/18 , G01P15/123
摘要： A semiconductor strain sensor includes a silicon substrate, a strain resistive element and electrodes. The silicon substrate has a deformable portion which is deformed when stress is applied to it. The strain resistive element is formed on the deformable portion and has an at least a first layer and a second layer which form a heterojunction between them. The first layer is doped with impurities so that a two-dimensional carrier gas layer is formed in the second layer near the heterojunction. The two-dimensional carrier gas layer has carriers originating from the impurities. The electrodes electrically contact the two dimensional carrier gas layer. Change of resistance of the strain resistive element in accordance with the stress is detected through the electrodes.
摘要翻译：半导体应变传感器包括硅衬底，应变电阻元件和电极。硅衬底具有可变形部分，当其施加应力时，可变形部分变形。应变电阻元件形成在可变形部分上，并且具有在它们之间形成异质结的至少第一层和第二层。第一层掺杂杂质，使得在异质结附近的第二层中形成二维载气层。二维载气层具有源自杂质的载体。电极与二维载气层电接触。通过电极检测应变电阻元件根据应力的电阻变化。

10. 发明授权

US4962411A Semiconductor device with current detecting function 失效
标题翻译：具有电流检测功能的半导体器件
公开(公告)号：US4962411A
公开(公告)日：1990-10-09
申请号：US307177
申请日：1989-02-03
申请人： Norihito Tokura , Hironari Kuno , Hiroyasu Ito , Hirohiko Saito , Kunihiko Hara
发明人： Norihito Tokura , Hironari Kuno , Hiroyasu Ito , Hirohiko Saito , Kunihiko Hara
IPC分类号： H01L27/02 , H01L29/78
CPC分类号： H01L29/7815 , H01L27/0248 , H01L29/423
摘要： A semiconductor device with a current detecting function in which in place of an external resistor for detecting an operation current such as drain current or collector current of a device such as an FET or bipolar transistor, a probe electrode is formed in proximity to the device depletion layer to connect therethrough with the device channel to generate a probe voltage corresponding to the operation current.
摘要翻译：具有电流检测功能的半导体器件，其中代替用于检测诸如FET或双极晶体管的器件的漏极电流或集电极电流等工作电流的外部电阻器，形成探针电极附近的器件耗尽层与器件通道连接以产生对应于工作电流的探针电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式