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    • 1. 发明授权
    • Method of patterning superconducting films
    • 图案超导薄膜的方法
    • US5135908A
    • 1992-08-04
    • US391109
    • 1989-08-07
    • Edward S. YangQiyuan Y. Ma
    • Edward S. YangQiyuan Y. Ma
    • H01L39/24
    • H01L39/2464Y10S505/703Y10S505/706
    • In a method of patterning superconducting thin films such as YBaCuO, based on the inhibition of superconductivity by intermixing an impurity, such as silicon, with superconductor material, a thin film of silicon is formed on a magnesium oxide substrate and then patterned, by laser direct-writing for example, to correspond to a desired pattern of superconducting lines. Multilayered YBaCuO thin films are then deposited over the patterned silicon film and annealed using rapid thermal annealing at a temperature of 980.degree. C. maintained for a period in the range from 30 to 90 seconds. The rapid annealing results in intermixing of silicon and YBaCuO in regions of the film between the lines of the pattern which, in turn, causes these regions to become insulating, and at the same time causes the YBaCuO film over the line pattern to become superconducting. The principles of the method can be used to make superconducting interconnects as electrodes of semiconductor devices, and also to replace metal interconnects in semiconductor integrated circuits with superconducting interconnects.
    • 在诸如YBaCuO的图案化超导薄膜的方法中,基于通过将诸如硅的杂质与超导体材料混合来抑制超导性的方法,在氧化镁衬底上形成硅薄膜,然后通过激光直接 例如,为了对应于期望的超导线图案。 然后将多层YBaCuO薄膜沉积在图案化的硅膜上,并在980℃的温度下使用快速热退火进行退火,维持在30至90秒的范围内。 快速退火导致硅和YBaCuO在图案的线之间的膜的区域中的混合,这又导致这些区域变得绝缘,并且同时使YBaCuO膜超过线图案变得超导。 该方法的原理可用于制造超导互连作为半导体器件的电极,并且还用超导互连替代半导体集成电路中的金属互连。
    • 4. 发明申请
    • MEDICAL WARMING SYSTEM WITH NANO-THICKNESS HEATING ELEMENT
    • 具有纳米厚度加热元件的医疗保暖系统
    • US20100023098A1
    • 2010-01-28
    • US12507059
    • 2009-07-21
    • Geng LiCho Yee Joey ChowChih Lin IEdward S. Yang
    • Geng LiCho Yee Joey ChowChih Lin IEdward S. Yang
    • A61F7/00
    • A61F7/007A61B2017/00221A61F2007/0071A61F2007/0095
    • A medical warming system includes a plurality of heating elements respectively adapted to be disposed closed to various parts of a plurality of patients' bodies, a first group of sensors disposed at the proximity of the heating elements and configured for measuring the temperatures of the heating elements, a second group of sensors adapted to be disposed at the various parts of the patients' bodies and configured for measuring the temperatures of the various parts of the patients' bodies, and a controller being in communication with the first group and the second group of sensors. The controller is configured for receiving temperature data from the sensors and controlling the temperature of each heating element accordingly. Each heating element includes a conductive layer made from a nano-thickness material.
    • 医疗加温系统包括多个加热元件,其分别适于被设置为关闭到多个患者身体的各个部分,第一组传感器设置在加热元件附近,并被配置为测量加热元件的温度 ,第二组传感器,其适于被布置在所述患者身体的各个部分处,并且被配置用于测量患者身体的各个部分的温度;以及控制器,其与所述第一组和所述第二组 传感器。 控制器被配置为从传感器接收温度数据并且相应地控制每个加热元件的温度。 每个加热元件包括由纳米厚度材料制成的导电层。
    • 9. 发明授权
    • Heterojunction bipolar transistor with buried selective sub-collector
layer, and methods of manufacture
    • 具有埋层选择性亚集电极层的异质结双极晶体管及其制造方法
    • US5981985A
    • 1999-11-09
    • US669113
    • 1996-06-24
    • Yue-Fei YangEdward S. Yang
    • Yue-Fei YangEdward S. Yang
    • H01L21/331H01L29/737H01L29/41
    • H01L29/66318H01L29/7371
    • In an integrated heterojunction bipolar transistor (HBT) with minimized base-collector capacitance, a sub-collector region is formed as a mesa on a substrate, a collector contact is to the sub-collector mesa region, a lightly-doped collector region and a base region extend from the mesa onto the substrate, and a base contact and its via hole for interconnection are off the mesa, with minimal overlap with the sub-collector region. The latter may be termed a buried selective sub-collector (BSSC) region. Such transistors can be used as integrated switching devices and microwave devices, e.g., in wireless communications, satellite direct broadcast systems, automobile collision avoidance systems, global positioning systems, and other high-frequency applications.
    • 在具有最小的基极集电极电容的集成异质结双极晶体管(HBT)中,副集电极区域在基板上形成为台面,集电极接触到子集电极台面区域,轻掺杂集电极区域和 基底区域从台面延伸到基板上,并且用于互连的基部接触件及其通孔用于互连,与子集电极区域具有最小的重叠。 后者可以被称为掩埋选择性子集电极(BSSC)区域。 这样的晶体管可以用作集成开关设备和微波设备,例如在无线通信,卫星直播广播系统,汽车碰撞避免系统,全球定位系统以及其它高频应用中。
    • 10. 发明授权
    • Heterojunction bipolar transistor having heterostructure ballasting
emitter
    • 异质结双极晶体管,具有异质结构镇流发射极
    • US5859447A
    • 1999-01-12
    • US853238
    • 1997-05-09
    • Edward S. YangYue-Fei Yang
    • Edward S. YangYue-Fei Yang
    • H01L29/08H01L29/737H01L31/0328H01L31/0536H01L31/092
    • H01L29/7371H01L29/0817
    • An HBT device having heterostructure ballasting emitter is disclosed. The heterostructure ballasting emitter includes an n-type emitter setback layer on a base layer and a wide-gap ballasting emitter layer on the setback layer. The heterostructure ballasting emitter is made so that the band gap of the emitter setback layer is equal to or larger than that of the base layer and the band gap of the ballasting emitter layer is larger than that of the emitter setback layer. The heterostructure of the emitter setback layer and the ballasting emitter layer serves as the ballast. By changing the value of the valance offset between the emitter setback layer and the ballasting emitter layer, the temperature dependence of the current gain becomes adjustable. As a consequence, the present invention overcomes hurdles posed by the current gain collapse and a negative differential resistance and improves the use of the HBTs in microwave power applications.
    • 公开了一种具有异质结构镇流发射体的HBT器件。 异质结构镇流发射器包括在基底层上的n型发射器反射层和挫折层上的宽间隙压电发射极层。 制造异质结构镇流发射极,使得发射极反射层的带隙等于或大于基极层的带隙,并且压载发射极层的带隙大于发射极退绕层的带隙。 发射极回流层和镇流发射极层的异质结构作为镇流器。 通过改变发射极反射层和镇流发射极层之间的价态偏移值,电流增益的温度依赖性可以调节。 因此,本发明克服了当前增益坍塌所带来的障碍和负的差分电阻,并改善了HBT在微波功率应用中的应用。