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    • 3. 发明授权
    • CMOS image sensor and method for manufacturing the same
    • CMOS图像传感器及其制造方法
    • US07579625B2
    • 2009-08-25
    • US11616054
    • 2006-12-26
    • Duk Soo Kim
    • Duk Soo Kim
    • H01L31/0232
    • H01L27/14685H01L27/14621H01L27/14627
    • A CMOS image sensor is provided. The CMOS image sensor can include: a plurality of photodiodes formed on a semiconductor substrate; an interlayer dielectric layer formed on an entire surface of the semiconductor substrate having the plurality of photodiodes; color filter layers including multi-layered blue color filter layers formed on the interlayer dielectric layer corresponding to respective photodiodes of the plurality of photodiodes; a planarization layer formed on the semiconductor substrate having the color filter layers; and microlenses formed on the planarization layer.
    • 提供CMOS图像传感器。 CMOS图像传感器可以包括:形成在半导体衬底上的多个光电二极管; 形成在具有多个光电二极管的半导体衬底的整个表面上的层间电介质层; 彩色滤光层,包括形成在与多个光电二极管的各个光电二极管相对应的层间电介质层上的多层蓝色滤色层; 形成在具有滤色器层的半导体衬底上的平坦化层; 和形成在平坦化层上的微透镜。
    • 4. 发明授权
    • Methods of manufacturing semiconductor devices
    • 制造半导体器件的方法
    • US07244668B2
    • 2007-07-17
    • US11026954
    • 2004-12-30
    • Duk Soo Kim
    • Duk Soo Kim
    • H01L21/20H01L21/44
    • H01L21/28562H01L21/28518H01L29/665H01L29/6659H01L29/7833
    • Methods for manufacturing semiconductor devices are disclosed. In one example, the semiconductor device has a gate and source/drain regions formed on a substrate. One example method includes introducing transition metal (Ti) source or precursor so that the introduced Ti source is chemisorbed onto the surface of the substrate and Ti mono-layer is formed; introducing semiconductor (Si) source so that the introduced Si source is chemisorbed onto the Ti mono-layer and Si mono-layer is formed; repeating the forming of the Ti and Si mono-layers; annealing the substrate to form a silicide layer (TiSi2) of C-54 phase; and patterning the C-54 phase TiSi2 layer to remain on the upper surfaces of the gate and source/drain regions.
    • 公开了制造半导体器件的方法。 在一个示例中,半导体器件具有形成在衬底上的栅极和源极/漏极区域。 一种示例性方法包括引入过渡金属(Ti)源或前体,使得引入的Ti源被化学吸附到衬底的表面上,形成Ti单层; 引入半导体(Si)源,使得引入的Si源被化学吸附到Ti单层上并形成Si单层; 重复形成Ti和Si单层; 退火衬底以形成C-54相的硅化物层(TiSi 2 N 2); 以及图案化C-54相TiSi 2层以保留在栅极和源极/漏极区域的上表面上。
    • 7. 发明授权
    • Light emitting apparatus for stuffed toys and the like
    • 填充玩具等的发光装置
    • US5791965A
    • 1998-08-11
    • US484732
    • 1995-06-07
    • Duk Soo Kim
    • Duk Soo Kim
    • A63H3/00A63H3/02A63H33/22A63H3/28
    • A63H3/006A63H3/02
    • A stuffed toy is provided with a spaced array of lights on its outer surface. The light is emitted from outwardly disposed free ends of optical fibers of varying lengths. The frequency and intensity of the light is synchronized with sounds, music and/or words emitted when the toy is squeezed in the area where a switch is located. The squeeze switch, a battery housing and a speaker are located in the batting material inside the toy and are electrically connected to an integrated circuit also housed in the batting. A microchip is mounted on the printed circuit board and produces light-generating signals and audio-generating signals. An LED lamp receives the light-generating signals. The optical fibers have adjacent ends which are clamped together in a lamp-conforming configuration. The adjacent ends of the optical fibers and the LED lamp are encapsulated and secured in fixed relation to one another within the batting.
    • 填充玩具在其外表面上设置有间隔开的阵列的灯。 光从向外设置的长度不同的光纤的自由端发射。 当玩具被挤压在交换机所在的区域时,光的频率和强度与发出的声音,音乐和/或词同步。 挤压开关,电池壳体和扬声器位于玩具内的击打材料中,并且电连接到也容纳在击球中的集成电路。 微芯片安装在印刷电路板上,产生发光信号和音频产生信号。 LED灯接收发光信号。 光纤具有以灯符合构型夹紧在一起的相邻端。 光纤和LED灯的相邻端在棉絮内被封装并固定成彼此固定的关系。