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1. 发明授权

US07518215B2 One mask hyperabrupt junction varactor using a compensated cathode contact 有权
标题翻译：一个掩模超破坏结变容二极管使用补偿阴极接触
公开(公告)号：US07518215B2
公开(公告)日：2009-04-14
申请号：US10905486
申请日：2005-01-06
申请人： Douglas D. Coolbaugh , Stephen S. Furkay , Jeffrey B. Johnson , Robert M. Rassel
发明人： Douglas D. Coolbaugh , Stephen S. Furkay , Jeffrey B. Johnson , Robert M. Rassel
IPC分类号： H01L29/93
CPC分类号： H01L29/93
摘要： A semiconductor structure comprising a hyperabrupt junction varactor with a compensated cathode contact as well as a method of fabricating the same are disclosed. The method includes a single implant mask which is used in forming the subcollector/cathode, collector/well and hyperabrupt junction.
摘要翻译：公开了一种半导体结构，其包括具有补偿的阴极接触的超级连接变容二极管及其制造方法。该方法包括用于形成子集电极/阴极，集电极/阱和超破裂结的单个注入掩模。

2. 发明授权

US07700453B2 Method for forming hyper-abrupt junction varactors 失效
标题翻译：形成超突变连接变容二极管的方法
公开(公告)号：US07700453B2
公开(公告)日：2010-04-20
申请号：US11697886
申请日：2007-04-09
申请人： Douglas D. Coolbaugh , Stephen S. Furkay , Jeffrey B. Johnson , Robert M. Rassel , David C. Sheridan
发明人： Douglas D. Coolbaugh , Stephen S. Furkay , Jeffrey B. Johnson , Robert M. Rassel , David C. Sheridan
IPC分类号： H01L21/20 , H01L21/8234 , H01L21/425
CPC分类号： H01L29/93 , H01L29/94
摘要： Method of fabricating a varactor that includes providing a semiconductor substrate, doping a lower region of the semiconductor substrate with a first dopant at a first energy level, doping a middle region of the semiconductor substrate with a second dopant at a second energy level lower than the first energy level, and doping an upper region of the semiconductor substrate with a third dopant at a third energy level lower than the second energy level.
摘要翻译：一种制造变容二极管的方法，包括提供半导体衬底，以第一能级掺杂第一掺杂剂的半导体衬底的下部区域，在第二能级下掺杂第二掺杂剂的第二掺杂剂的中间区域; 第一能级，并且以比第二能级低的第三能级用第三掺杂剂掺杂半导体衬底的上部区域。

3. 发明授权

US07253073B2 Structure and method for hyper-abrupt junction varactors 有权
标题翻译：超突变连接变容二极管的结构和方法
公开(公告)号：US07253073B2
公开(公告)日：2007-08-07
申请号：US10707905
申请日：2004-01-23
申请人： Douglas D. Coolbaugh , Stephen S. Furkay , Jeffrey B. Johnson , Robert M. Rassel , David C. Sheridan
发明人： Douglas D. Coolbaugh , Stephen S. Furkay , Jeffrey B. Johnson , Robert M. Rassel , David C. Sheridan
IPC分类号： H01L21/20 , H01L21/8234 , H01L21/425
CPC分类号： H01L29/93 , H01L29/94
摘要： A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various dopants at various energy levels. Accordingly, unit-to-unit device variation is reduced because etching, growing, and deposition processes to make the active portion of the varactor are reduced or eliminated. The resulting HA junction has a more uniform thickness, and a more uniform doping profile.
摘要翻译：提供HA结变容二极管的方法和装置，其可以以从一个变容二极管到下一个变容二极管的C-V调谐曲线的变化减小来制造。该方法产生可变电抗器，其中有源区基本上通过以各种能级掺杂各种掺杂剂的Si衬底而形成。因此，由于蚀刻，生长和沉积工艺以使变容二极管的活性部分减少或消除，因此减小了单元到单元的装置变化。所得到的HA结具有更均匀的厚度和更均匀的掺杂分布。

4. 发明授权

US07183628B2 Structure and method of hyper-abrupt junction varactors 有权
标题翻译：超突变结可变电抗器的结构和方法
公开(公告)号：US07183628B2
公开(公告)日：2007-02-27
申请号：US11004877
申请日：2004-12-07
申请人： Douglas D. Coolbaugh , Stephen S. Furkay , Jeffrey B. Johnson , Robert M. Rassel , David C. Sheridan
发明人： Douglas D. Coolbaugh , Stephen S. Furkay , Jeffrey B. Johnson , Robert M. Rassel , David C. Sheridan
IPC分类号： H01L29/93
CPC分类号： H01L29/93 , H01L29/94
摘要： A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various dopants at various energy levels. Accordingly, unit-to-unit device variation is reduced because etching, growing, and deposition processes to make the active portion of the varactor are reduced or eliminated. The resulting HA junction has a more uniform thickness, and a more uniform doping profile.
摘要翻译：提供HA结变容二极管的方法和装置，其可以以从一个变容二极管到下一个变容二极管的C-V调谐曲线的变化减小来制造。该方法产生可变电抗器，其中有源区基本上通过以各种能级掺杂各种掺杂剂的Si衬底而形成。因此，由于蚀刻，生长和沉积工艺以使变容二极管的活性部分减少或消除，因此减小了单元到单元的装置变化。所得到的HA结具有更均匀的厚度和更均匀的掺杂分布。

5. 发明授权

US06878983B2 High performance varactor diodes 失效
标题翻译：高性能变容二极管
公开(公告)号：US06878983B2
公开(公告)日：2005-04-12
申请号：US10728140
申请日：2003-12-04
申请人： Douglas D. Coolbaugh , Stephen S. Furkay , Mohamed Youssef Hammad , Jeffrey B. Johnson
发明人： Douglas D. Coolbaugh , Stephen S. Furkay , Mohamed Youssef Hammad , Jeffrey B. Johnson
IPC分类号： H01L27/08 , H01L29/93 , H01L27/108 , H01L21/20
CPC分类号： H01L29/93 , H01L27/0808 , Y10S438/979
摘要： A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.
摘要翻译：一种变容二极管，具有在衬底中包括第一导电类型的阱区的第一电极，包括设置在所述阱区中的第二导电类型邻接隔离区的第一多个扩散区的第二电极和第二多个扩散所述第一导电类型的区域从不邻近所述隔离区域的所述第一多个扩散区域的部分横向延伸并且具有大于所述第一多个扩散区域的掺杂剂浓度的掺杂剂浓度。变容二极管在约0V至3V之间的施加电压范围内具有至少约3.5的可调谐性，约0V至2V之间的施加电压范围内的电容值的近似线性变化，以及至少约100的Q 大约2GHz的电路工作频率。

6. 发明授权

US06803269B2 High performance varactor diodes 失效
公开(公告)号：US06803269B2
公开(公告)日：2004-10-12
申请号：US10064754
申请日：2002-08-14
申请人： Douglas D. Coolbaugh , Stephen S. Furkay , Mohamed Youssef Hammad , Jeffrey B. Johnson
发明人： Douglas D. Coolbaugh , Stephen S. Furkay , Mohamed Youssef Hammad , Jeffrey B. Johnson
IPC分类号： H01L218238
CPC分类号： H01L29/93 , H01L27/0808 , Y10S438/979
摘要： A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.

7. 发明授权

US07005665B2 Phase change memory cell on silicon-on insulator substrate 有权
标题翻译：硅绝缘体衬底上的相变存储单元
公开(公告)号：US07005665B2
公开(公告)日：2006-02-28
申请号：US10708667
申请日：2004-03-18
申请人： Stephen S. Furkay , Hendrick Hamann , Jeffrey B. Johnson , Chung H. Lam , Hon-Sum P. Wong
发明人： Stephen S. Furkay , Hendrick Hamann , Jeffrey B. Johnson , Chung H. Lam , Hon-Sum P. Wong
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L29/685 , G11C11/5678 , G11C13/0004 , H01L27/1203
摘要： The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of second doped regions; a phase change material positioned on the first doped region; and a conductor positioned on the phase change material, wherein when the phase change material is a first phase the semiconductor structure operates as a bipolar junction transistor, and when the phase change material is a second phase the semiconductor structure operates as a field effect transistor.
摘要翻译：本发明包括一种形成相变材料存储装置的方法和由其制成的相变存储装置。具体地，相变存储器件包括半导体结构，该半导体结构包括具有侧面为一组第二掺杂区的第一掺杂区的衬底; 位于所述第一掺杂区上的相变材料; 以及位于所述相变材料上的导体，其中当所述相变材料为第一相时，所述半导体结构作为双极结型晶体管工作，并且当所述相变材料为第二相时，所述半导体结构作为场效应晶体管工作。

8. 发明授权

US07057923B2 Field emission phase change diode memory 失效
标题翻译：场发射相变二极管存储器
公开(公告)号：US07057923B2
公开(公告)日：2006-06-06
申请号：US10732582
申请日：2003-12-10
申请人： Stephen S. Furkay , David V. Horak , Chung H. Lam , Hon-Sum P. Wong
发明人： Stephen S. Furkay , David V. Horak , Chung H. Lam , Hon-Sum P. Wong
IPC分类号： G11C11/00 , H01L27/00 , H01L21/00
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A storage cell that may be a memory cell, and integrated circuit (IC) chip including an array of the memory cells and a method of forming the IC. Each storage cell is formed between a top an bottom electrode. Each cell includes a phase change layer that may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) or GST layer. The cell also includes a stylus with the apex of the stylus contacting the GST layer. The apex may penetrate the GST layer
摘要翻译：可以是存储单元的存储单元和包括存储单元的阵列的集成电路（IC）芯片和形成IC的方法。每个存储单元形成在顶部底部电极之间。每个电池包括可以是硫族化物，特别是锗（Ge），锑（Sb），碲（Te）或GST层的相变层。电池还包括一个触笔，触笔的顶点与GST层接触。顶点可以穿透GST层

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