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    • 2. 发明申请
    • LIQUID CRYSTAL DRIVING DEVICE AND DRIVING METHOD THEREOF
    • 液晶驱动装置及其驱动方法
    • US20110267335A1
    • 2011-11-03
    • US13179680
    • 2011-07-11
    • Dong Hwan LEETae Hyuk KWON
    • Dong Hwan LEETae Hyuk KWON
    • G06F3/038
    • G09G3/3696G09G3/3648G09G2320/0223
    • Disclosed is a liquid crystal driving device, which is without a gate PCB, having improved uniformity of screen, and a driving method thereof. The liquid crystal driving device comprises: a sequence recognition means for recognizing sequence of a pertinent gate driver IC by a pulse width of a vertical start signal inputted in synchronization with a vertical synchronous signal, and generating a Carry signal and location data of the pertinent gate driver IC; and gate-off voltage generation means for receiving a first gate-off voltage and the location data of the pertinent gate driver IC, and outputting a second gate-off voltage which is generated by subtracting a voltage attenuation quantity corresponding to the location data of the gate driver IC from the first gate-off voltage.
    • 公开了一种没有栅极PCB的具有改进的屏幕均匀性的液晶驱动装置及其驱动方法。 液晶驱动装置包括:序列识别装置,用于通过与垂直同步信号同步输入的垂直起始信号的脉冲宽度来识别相关栅极驱动器IC的序列,并产生相应栅极的进位信号和位置数据 驱动IC; 以及栅极截止电压产生装置,用于接收第一栅极截止电压和相关栅极驱动器IC的位置数据,并输出第二栅极截止电压,该第二栅极截止电压是通过减去与所述栅极驱动器IC的位置数据相对应的电压衰减量而产生的 栅极驱动器IC从第一个栅极截止电压。
    • 7. 发明申请
    • ORGANIC LIGHT EMITTING DIODE DISPLAY AND DRIVING METHOD THEREOF
    • 有机发光二极管显示及其驱动方法
    • US20140062988A1
    • 2014-03-06
    • US13917749
    • 2013-06-14
    • Dong Hwan LEESeung Kyun HONGSo Young PARK
    • Dong Hwan LEESeung Kyun HONGSo Young PARK
    • G09G3/32
    • G09G3/3208G09G3/3233G09G2300/0819G09G2300/0852G09G2300/0861
    • An organic light emitting diode display includes at least one pixel circuit, a scanning drive unit connected to the pixel circuit through a scan line and generating a selection signal to be applied to the pixel circuit, and a data drive unit connected to the pixel circuit through a data line and applying a data voltage to the pixel circuit. The data drive unit includes a first line to which the data voltage is applied and a demultiplexer connected between the first line and a first end of the data line, the demultiplexer time-divisionally applying the data voltage applied to the first line to the data line according to a demultiplexing signal. In one horizontal cycle, at least a portion of a period in which the demultiplexing signal is applied and at least a portion of a period in which the selection signal is applied overlap each other.
    • 有机发光二极管显示器包括至少一个像素电路,扫描驱动单元,其通过扫描线连接到像素电路,并产生要施加到像素电路的选择信号;以及数据驱动单元,连接到像素电路,通过 数据线并将数据电压施加到像素电路。 数据驱动单元包括施加数据电压的第一行和连接在数据线的第一行和第一端之间的解复用器,多路分解器将施加到第一行的数据电压分时地施加到数据线 根据解复用信号。 在一个水平周期中,施加解复用信号的周期的至少一部分和施加选择信号的周期的至少一部分彼此重叠。
    • 8. 发明申请
    • METAL LINE OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    • 金属线半导体器件及其制造方法
    • US20080014734A1
    • 2008-01-17
    • US11771214
    • 2007-06-29
    • Young Ok HONGDong Hwan LEE
    • Young Ok HONGDong Hwan LEE
    • H01L21/44
    • H01L21/76816H01L27/115H01L27/11521H01L27/11524H01L2924/0002H01L2924/00
    • A metal line of a semiconductor device comprising contact plugs, a plurality of first trenches, first metal lines, a plurality of second trenches, and second metal lines. The contact plugs are formed over a semiconductor substrate and are insulated from each other by a first insulating layer. The plurality of first trenches are formed in the first insulating layer and are connected to first contact plugs of the contact plugs. The first metal lines are formed within the first trenches and are connected to the first contact plugs. The plurality of second trenches are formed over the first metal lines and the first insulating layer and comprise a second insulating layer connected to second contact plugs of the contact plugs. The second metal lines are formed within the second trenches and are connected to the second contact plugs.
    • 包括接触插塞,多个第一沟槽,第一金属线,多个第二沟槽和第二金属线的半导体器件的金属线。 接触插塞形成在半导体衬底之上并且通过第一绝缘层彼此绝缘。 多个第一沟槽形成在第一绝缘层中并连接到接触插塞的第一接触插塞。 第一金属线形成在第一沟槽内,并连接到第一接触插塞。 多个第二沟槽形成在第一金属线和第一绝缘层之上,并且包括连接到接触插塞的第二接触插塞的第二绝缘层。 第二金属线形成在第二沟槽内并连接到第二接触插塞。