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1. 发明授权

US6064507A High speed differential optoelectronic receiver 有权
标题翻译：高速差分光电接收机
公开(公告)号：US6064507A
公开(公告)日：2000-05-16
申请号：US206912
申请日：1998-12-07
申请人： Donald G. Heflinger , Phillip D. Hayashida , Todd E. Humes , John D. Hyde
发明人： Donald G. Heflinger , Phillip D. Hayashida , Todd E. Humes , John D. Hyde
IPC分类号： H01L31/10 , H03F3/08 , H04B1/18 , H04B10/04 , H04B10/06 , H04B10/14 , H04B10/158 , H04B10/26 , H04B10/28 , G02B26/00
CPC分类号： H04B10/69
摘要： A high speed differential optoelectronic receiver comprises a first photodetector responsive to a first incident amplitude modulated optical signal and operative to develop a first electrical signal, a second photodetector responsive to a second incident amplitude modulated optical signal that is complementary to the first optical signal and operative to develop a second electrical signal, and an amplifier having a first input that is responsive to the first electrical signal and a second input that is responsive to the second electrical signal and is operative to provide a differential output signal that is proportional to the difference between the first and the second electrical signals. Also, a method for transforming complementary amplitude modulated optical signals into a complementary electrical output signal is invented.
摘要翻译：高速差分光电接收器包括响应于第一入射幅度调制光信号并可操作以开发第一电信号的第一光电检测器，响应于与第一光信号互补的第二入射幅度调制光信号的第二光电检测器，以产生第二电信号，以及放大器，其具有响应于所述第一电信号的第一输入和响应于所述第二电信号的第二输入，并且可操作地提供与所述第二电信号成比例的差分输出信号，第一和第二电信号。此外，发明了一种将互补幅度调制光信号变换成互补电输出信号的方法。

2. 发明授权

US5629954A Semiconductor laser diode with integrated etalon 失效
标题翻译：具有集成标准具的半导体激光二极管
公开(公告)号：US5629954A
公开(公告)日：1997-05-13
申请号：US329017
申请日：1994-10-25
申请人： Michael Jansen , Phillip D. Hayashida , Simon S. Ou , Dennis P. Bowler
发明人： Michael Jansen , Phillip D. Hayashida , Simon S. Ou , Dennis P. Bowler
IPC分类号： H01S5/026 , H01S5/028 , H01S5/10 , H01S5/18 , H01S3/18
CPC分类号： H01S5/026 , H01S5/18 , H01S5/028 , H01S5/1025
摘要： A single-frequency semiconductor laser diode structure and a method for its fabrication. The structure includes a built-in etalon, which limits the frequency of operation of the device to a very narrow frequency band. For an edge-emitting diode, the etalon is formed over a cleaved end face of the semiconductor diode structure, and light is emitted from an opposed cleaved end face. For a surface emitting diode, the etalon is formed as an additional plurality of layers between a plurality of semiconductor layers forming the diode and a substrate on which the structure is formed. Transverse channels formed in the structure have side surfaces that act as mirrors, at least one of which is angularly inclined to the plane of the active region, to reflect light through the etalon layers and out through a parallel exterior surface of the structure. Multiple surface emitting lasers may be arrayed in closely spaced relation to each other, to form a powerful light emitting array.
摘要翻译：单频半导体激光二极管结构及其制造方法。该结构包括内置的标准具，将器件的工作频率限制在非常窄的频带。对于边缘发光二极管，标准具形成在半导体二极管结构的切割端面上，并且从相对的切割端面发射光。对于表面发光二极管，标准具形成为形成二极管的多个半导体层和其上形成结构的基板之间的附加多个层。在结构中形成的横向通道具有用作反射镜的侧表面，其至少其中之一与有源区域的平面成角度地倾斜，以反射光通过标准具层并且穿过结构的平行外表面。多个表面发射激光器可以以彼此间隔紧密的关系排列，以形成强大的发光阵列。

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