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1. 发明申请

US20100018580A1 Method for the Manufacture of a Solar Cell and the Resulting Solar Cell 审中-公开
标题翻译：太阳能电池的制造方法和太阳能电池的制造方法
公开(公告)号：US20100018580A1
公开(公告)日：2010-01-28
申请号：US12554410
申请日：2009-09-04
申请人： Dirk Habermann , Patrik Müller
发明人： Dirk Habermann , Patrik Müller
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/022425 , Y02E10/50
摘要： In a method for the manufacture of a solar cell from a silicon substrate to the front and back surfaces are firstly applied a first antireflection coating with an optical refractive index n between 3.6 and 3.9. To the latter is applied a second antireflection with an optical refractive index n between 1.94 and 2.1. The antireflection coatings are separated down to the underlying silicon substrate in order to introduce metal contacts to the silicon substrate into the antireflection coatings.
摘要翻译：在从硅衬底到前表面和后表面的太阳能电池的制造方法中首先应用光折射率n在3.6和3.9之间的第一抗反射涂层。对光纤折射率n在1.94与2.1之间的第二次抗反射应用于后者。将抗反射涂层分离到下面的硅衬底，以便将金属接触引入硅衬底进入抗反射涂层。

2. 发明申请

US20110232751A1 METHOD FOR MACHINING THE SURFACE OF A WAFER FOR PRODUCING A SOLAR CELL, AND WAFER 审中-公开
标题翻译：用于加工用于生产太阳能电池的波形表面的方法和方法
公开(公告)号：US20110232751A1
公开(公告)日：2011-09-29
申请号：US13154539
申请日：2011-06-07
申请人： Dirk Habermann
发明人： Dirk Habermann
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/186 , C25D7/126 , H01L31/02168 , H01L31/022425 , Y02E10/50 , Y02P70/521
摘要： In a method for the treatment of the surface of a wafer for producing a solar cell, onto which wafer an antireflection and passivation layer has been applied onto a p-doped layer in a step preceding the method, the surface is treated in a processing step and then a subsequent metallization on the surface of the wafer for producing contacts for the solar cell takes place. This processing step is for passivation or for removal of the p-doped layer in the region of disturbances such as scratches, defect sites, pinholes and inhomogeneous regions in the antireflection and passivation layer. It is thus possible to avoid metal depositions at these disturbances.
摘要翻译：在该方法中，为了制造太阳能电池的晶片的表面的处理方法，在该方法中的步骤中，在其上将抗反射和钝化层施加到p掺杂层上的表面上，在处理步骤然后进行用于生产用于太阳能电池的触点的晶片表面上随后的金属化。该处理步骤用于在抗反射和钝化层中的干扰区域中的钝化或去除p掺杂层，例如划痕，缺陷位点，针孔和不均匀区域。因此，可以避免在这些扰动下的金属沉积。

3. 发明申请

US20090232627A1 Device and method for positioning and blocking thin substrates on a cut substrate block 有权
标题翻译：在切割的基板块上定位和阻挡薄基板的装置和方法
公开(公告)号：US20090232627A1
公开(公告)日：2009-09-17
申请号：US11921958
申请日：2006-05-26
申请人： Josef Gentischer , Dirk Habermann
发明人： Josef Gentischer , Dirk Habermann
IPC分类号： H01L21/68
CPC分类号： B28D5/0082 , Y10T83/0467 , Y10T83/6571
摘要： A device for positioning and blocking thin silicon wafers after wire-sawing a silicon wafer block. The device comprises a cassette that accommodates the wafer block and is provided with two contact strips whose sides facing the wafer block encompass elements which engage into narrow cutting gap between the wafers so as to maintain a distance and provide support. This allows the wafers to be fixed in the position thereof even after removing a supporting glass plate such that particularly the gap in the area of the former connecting point to the removed supporting glass plate is maintained and the subsequent singulation process is simplified.
摘要翻译：在对硅晶片块进行线锯切后，用于定位和阻挡薄硅晶片的装置。该装置包括容纳晶片块的盒，并且设置有两个接触条，其两个面向晶片块的侧面包围与晶片之间的窄切割间隙啮合的元件，以保持距离并提供支撑。即使在去除支撑玻璃板之后，也可以将晶片固定在其位置，特别是保持了与拆卸后的支撑玻璃板的原始连接点的区域中的间隙，从而简化了随后的切割过程。

4. 发明授权

US10030307B2 Apparatus and process for producing thin layers 有权
公开(公告)号：US10030307B2
公开(公告)日：2018-07-24
申请号：US14235998
申请日：2012-07-26
申请人： Christian Schmid , Dirk Habermann , Jurgen Haungs , Chuck Attema , Tom Stewart , Kenneth Provancha
发明人： Christian Schmid , Dirk Habermann , Jurgen Haungs , Chuck Attema , Tom Stewart , Kenneth Provancha
IPC分类号： C23C16/54 , C23C16/455 , C23C16/44 , H01L31/20 , C23C16/02 , C23C16/46 , C23C16/458 , H01L21/67 , H01L21/677 , H01L31/0224 , H01L31/18 , C23C16/453 , H01L31/0216 , C23C16/34 , C23C16/40 , H01L21/02
CPC分类号： C23C16/54 , C23C16/0209 , C23C16/345 , C23C16/402 , C23C16/403 , C23C16/4408 , C23C16/4412 , C23C16/453 , C23C16/4551 , C23C16/45521 , C23C16/4557 , C23C16/45578 , C23C16/4558 , C23C16/45595 , C23C16/458 , C23C16/4581 , C23C16/466 , C23C16/545 , H01L21/02271 , H01L21/67115 , H01L21/67706 , H01L21/6776 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/18 , H01L31/1884 , H01L31/206 , Y02E10/50
摘要： In an apparatus for producing thin layers on substrates for solar cell production, wherein the thin layers are applied by an APCVD process at temperatures of more than 250° C., the substrates are conveyed on a horizontal conveyor path and coated by means of an APCVD coating in continuous operation. The conveyor path has conveyor rollers, which consist of a temperature-resistant, non-metallic material, preferably of ceramic. A heating device and/or a purge gas feeding device is/are arranged on that side of the conveyor path which is remote from the coating apparatus.

5. 发明授权

US08399343B2 Method for the selective doping of silicon and silicon substrate treated therewith 有权
标题翻译：用于处理硅和硅衬底的选择性掺杂的方法
公开(公告)号：US08399343B2
公开(公告)日：2013-03-19
申请号：US12903804
申请日：2010-10-13
申请人： Dirk Habermann
发明人： Dirk Habermann
IPC分类号： H01L21/316
CPC分类号： H01L31/1804 , H01L21/2255 , H01L31/022425 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phosphorous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g); complete removal of the phosphorous silicate glass (2) from the silicon.
摘要翻译：用于在硅中制造pn结的硅衬底（1）的硅的选择性掺杂的方法的特征在于以下步骤：a）用硅掺杂剂（2）提供硅衬底（1）的表面，基于磷，b）加热用于在硅表面上产生磷硅酸盐玻璃（2）的硅衬底（1），其中磷作为第一掺杂（3）扩散到硅中，c）施加掩模（4））覆盖磷酸硅玻璃（2），覆盖稍后被高度掺杂的区域（5），d）去除非掩蔽区域中的磷硅酸盐玻璃（2），e）从磷中去除掩模（4）硅酸盐玻璃（2），f）再次加热用于将磷从磷硅酸盐玻璃（2）进一步扩散到硅中作为用于产生高掺杂区（5）的第二掺杂，g）; 从硅中完全除去磷酸硅玻璃（2）。

6. 发明授权

US07766001B2 Device and method for positioning and blocking thin substrates on a cut substrate block 有权
标题翻译：在切割的基板块上定位和阻挡薄基板的装置和方法
公开(公告)号：US07766001B2
公开(公告)日：2010-08-03
申请号：US11921958
申请日：2006-05-26
申请人： Josef Gentischer , Dirk Habermann
发明人： Josef Gentischer , Dirk Habermann
IPC分类号： B28D7/04 , B26D7/32 , B65D85/62
CPC分类号： B28D5/0082 , Y10T83/0467 , Y10T83/6571
摘要： A device for positioning and blocking thin silicon wafers after wire-sawing a silicon wafer block. The device comprises a cassette that accommodates the wafer block and is provided with two contact strips whose sides facing the wafer block encompass elements which engage into narrow cutting gap between the wafers so as to maintain a distance and provide support. This allows the wafers to be fixed in the position thereof even after removing a supporting glass plate such that particularly the gap in the area of the former connecting point to the removed supporting glass plate is maintained and the subsequent singulation process is simplified.
摘要翻译：在对硅晶片块进行线锯切后，用于定位和阻挡薄硅晶片的装置。该装置包括容纳晶片块的盒，并且设置有两个接触条，其两个面向晶片块的侧面包围与晶片之间的窄切割间隙啮合的元件，以保持距离并提供支撑。即使在去除支撑玻璃板之后，也可以将晶片固定在其位置，特别是保持了与拆卸后的支撑玻璃板的原始连接点的区域中的间隙，从而简化了随后的切割过程。

7. 发明申请

US20150024540A1 Device and Method for Producing Thin Films 审中-公开
标题翻译：薄膜制造装置及方法
公开(公告)号：US20150024540A1
公开(公告)日：2015-01-22
申请号：US14235998
申请日：2012-07-26
申请人： Christian Schmid , Dirk Habermann , Jurgen Haungs , Chuck Attema , Tom Stewart , Kenneth Provancha
发明人： Christian Schmid , Dirk Habermann , Jurgen Haungs , Chuck Attema , Tom Stewart , Kenneth Provancha
IPC分类号： C23C16/54 , C23C16/458 , H01L31/0224 , H01L31/18 , H01L31/0216 , C23C16/453 , C23C16/455
CPC分类号： C23C16/54 , C23C16/0209 , C23C16/345 , C23C16/402 , C23C16/403 , C23C16/4408 , C23C16/4412 , C23C16/453 , C23C16/4551 , C23C16/45521 , C23C16/4557 , C23C16/45578 , C23C16/4558 , C23C16/45595 , C23C16/458 , C23C16/4581 , C23C16/466 , C23C16/545 , H01L21/02271 , H01L21/67115 , H01L21/67706 , H01L21/6776 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/18 , H01L31/1884 , H01L31/206 , Y02E10/50
摘要： In an apparatus for producing thin layers on substrates for solar cell production, wherein the thin layers are applied by an APCVD process at temperatures of more than 250° C., the substrates are conveyed on a horizontal conveyor path and coated by means of an APCVD coating in continuous operation. The conveyor path has conveyor rollers, which consist of a temperature-resistant, non-metallic material, preferably of ceramic. A heating device and/or a purge gas feeding device is/are arranged on that side of the conveyor path which is remote from the coating apparatus.
摘要翻译：在用于太阳能电池生产的基板上制造薄层的装置中，其中通过APCVD工艺在超过250℃的温度下施加薄层，基板在水平传送路径上传送并通过APCVD 涂层连续运行。传送路径具有输送辊，该输送辊由耐温的非金属材料构成，优选为陶瓷。在远离涂布装置的传送路径的一侧设置加热装置和/或吹扫气体供给装置。

8. 发明申请

US20110114168A1 Method for the Selective Doping of Silicon and Silicon Substrate Treated Therewith 有权
标题翻译：用于处理硅和硅衬底的选择性掺杂的方法
公开(公告)号：US20110114168A1
公开(公告)日：2011-05-19
申请号：US12903804
申请日：2010-10-13
申请人： Dirk Habermann
发明人： Dirk Habermann
IPC分类号： H01L31/0224 , H01L31/0216
CPC分类号： H01L31/1804 , H01L21/2255 , H01L31/022425 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phosphorous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g); complete removal of the phosphorous silicate glass (2) from the silicon.
摘要翻译：用于在硅中制造pn结的硅衬底（1）的硅的选择性掺杂的方法的特征在于以下步骤：a）用硅掺杂剂（2）提供硅衬底（1）的表面，基于磷，b）加热用于在硅表面上产生磷硅酸盐玻璃（2）的硅衬底（1），其中磷作为第一掺杂（3）扩散到硅中，c）施加掩模（4））覆盖磷酸硅玻璃（2），覆盖稍后被高度掺杂的区域（5），d）去除非掩蔽区域中的磷硅酸盐玻璃（2），e）从磷中去除掩模（4）硅酸盐玻璃（2），f）再次加热用于将磷从磷硅酸盐玻璃（2）进一步扩散到硅中作为用于产生高掺杂区（5）的第二掺杂，g）; 从硅中完全除去磷酸硅玻璃（2）。

9. 发明授权

US08349637B2 Method for the manufacture of a solar cell and the resulting solar cell 失效
标题翻译：制造太阳能电池的方法和所得到的太阳能电池
公开(公告)号：US08349637B2
公开(公告)日：2013-01-08
申请号：US12554592
申请日：2009-09-04
申请人： Christian Schmid , Dirk Habermann
发明人： Christian Schmid , Dirk Habermann
IPC分类号： H01L21/00 , H01L31/04
CPC分类号： H01L31/022425 , H01L31/022466 , H01L31/068 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In a method for the production of a solar cell, a flat aluminium layer is applied to the back of a solar cell substrate. The aluminium is alloyed into the silicon substrate by the effect of the temperature and forms an aluminium BSF. The remaining aluminium that has not been alloyed into the silicon is subsequently removed. The aluminium BSF is transparent to light.
摘要翻译：在制造太阳能电池的方法中，将平坦的铝层施加到太阳能电池基板的背面。通过温度的作用将铝合金化到硅衬底中并形成铝BSF。随后除去未合金化到硅中的剩余的铝。铝BSF对光是透明的。

10. 发明申请

US20120276749A1 Method and Device for Treating Silicon Substrates 审中-公开
标题翻译：用于处理硅衬底的方法和装置
公开(公告)号：US20120276749A1
公开(公告)日：2012-11-01
申请号：US13518660
申请日：2010-12-23
申请人： Dirk Habermann , Martin Schoch , Maher Izaaryene , Friedhelm Stein
发明人： Dirk Habermann , Martin Schoch , Maher Izaaryene , Friedhelm Stein
IPC分类号： H01L21/306 , B05B1/14
CPC分类号： H01L21/6708
摘要： In a method for processing monocrystalline silicon wafers, which are transported while lying flat along a horizontal transport path, etching solution for texturing the surface is applied from above by means of nozzles or the like. The etching solution is applied from above several times in succession onto the upper side of the silicon substrates, remains there and reacts with the silicon substrate.
摘要翻译：在沿着水平传送路径平坦地输送的单晶硅晶片的处理方法中，通过喷嘴等从上方施加用于纹理化表面的蚀刻液。蚀刻溶液从上述几次连续地施加到硅衬底的上侧，保留在那里并与硅衬底反应。

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