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    • 1. 发明授权
    • LED fabrication via ion implant isolation
    • 通过离子注入隔离制造LED
    • US07943406B2
    • 2011-05-17
    • US12327882
    • 2008-12-04
    • David Beardsley Slater, Jr.John Adam EdmondAlexander SuvorovIain Hamilton
    • David Beardsley Slater, Jr.John Adam EdmondAlexander SuvorovIain Hamilton
    • H01L21/00
    • H01L33/24H01L21/2654H01L33/025H01L33/145H01L33/32H01L33/44H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/73265H01L2924/00014H01L2924/00
    • A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
    • 半导体发光二极管包括半导体衬底,衬底上的n型III族氮化物的外延层,n型外延层上的III族氮化物的p型外延层,并与n型外延层形成pn结, 型层和n型外延层上的电阻性氮化镓区,并且邻近p型外延层,用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 一些实施例包括半导体衬底,衬底上的n型III族氮化物的外延层,n型外延层上的III族氮化物的p型外延层,并与n型层形成pn结, 其中所述外延区域的部分被图案化成台面,并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。 在公开的方法实施例中,通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。 在一些方法实施例中,在植入之前在外延区域中形成台面。 在植入期间,外延片安装成一定角度,使得离子直接注入到台面的侧壁中,从而使台面的部分半绝缘。 在离子注入期间,外延膜可以旋转。
    • 2. 发明申请
    • LED Fabrication Via Ion Implant Isolation
    • 通过离子植入物隔离制造LED
    • US20090104726A1
    • 2009-04-23
    • US12327882
    • 2008-12-04
    • David Beardsley Slater, JR.John Adam EdmondAlexander SuvorovIain Hamilton
    • David Beardsley Slater, JR.John Adam EdmondAlexander SuvorovIain Hamilton
    • H01L21/00H01L21/04H01L21/18
    • H01L33/24H01L21/2654H01L33/025H01L33/145H01L33/32H01L33/44H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/73265H01L2924/00014H01L2924/00
    • A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
    • 半导体发光二极管包括半导体衬底,衬底上的n型III族氮化物的外延层,n型外延层上的III族氮化物的p型外延层,并与n型外延层形成pn结, 型层和n型外延层上的电阻性氮化镓区,并且邻近p型外延层,用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 一些实施例包括半导体衬底,衬底上的n型III族氮化物的外延层,n型外延层上的III族氮化物的p型外延层,并与n型层形成pn结, 其中所述外延区域的部分被图案化成台面,并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。 在公开的方法实施例中,通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。 在一些方法实施例中,在植入之前在外延区域中形成台面。 在植入期间,外延片安装成一定角度,使得离子直接注入到台面的侧壁中,从而使台面的部分半绝缘。 在离子注入期间,外延膜可以旋转。
    • 7. 发明申请
    • LED fabrication via ion implant isolation
    • 通过离子注入隔离制造LED
    • US20050194584A1
    • 2005-09-08
    • US10987627
    • 2004-11-12
    • David SlaterJohn EdmondAlexander SuvorovIain Hamilton
    • David SlaterJohn EdmondAlexander SuvorovIain Hamilton
    • H01L29/06H01L31/0328
    • H01L21/2654H01L33/025H01L33/145H01L33/24H01L33/32H01L33/44H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/73265H01L2924/00014H01L2924/00
    • A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
    • 半导体发光二极管包括半导体衬底,衬底上的n型III族氮化物的外延层,n型外延层上的III族氮化物的p型外延层,并与n型外延层形成pn结, 型层和n型外延层上的电阻性氮化镓区,并且邻近p型外延层,用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 一些实施例包括半导体衬底,衬底上的n型III族氮化物的外延层,n型外延层上的III族氮化物的p型外延层,并与n型层形成pn结, 其中所述外延区域的部分被图案化成台面,并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。 在公开的方法实施例中,通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。 在一些方法实施例中,在植入之前在外延区域中形成台面。 在植入期间,外延片安装成一定角度,使得离子直接注入到台面的侧壁中,从而使台面的部分半绝缘。 在离子注入期间,外延膜可以旋转。
    • 9. 发明授权
    • LED fabrication via ion implant isolation
    • 通过离子注入隔离制造LED
    • US07943954B2
    • 2011-05-17
    • US12507288
    • 2009-07-22
    • Yifeng WuGerald H. NegleyDavid B. Slater, Jr.Valeri F. TsvetkovAlexander Suvorov
    • Yifeng WuGerald H. NegleyDavid B. Slater, Jr.Valeri F. TsvetkovAlexander Suvorov
    • H01L33/00
    • H01L33/32H01L33/305
    • A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
    • 半导体发光二极管包括半导体衬底,衬底上的n型III族氮化物的外延层,n型外延层上的III族氮化物的p型外延层,并与n型外延层形成pn结, 型层和n型外延层上的电阻性氮化镓区,并且邻近p型外延层,用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 在公开的方法实施例中,通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。
    • 10. 发明申请
    • LED Fabrication via Ion Implant Isolation
    • 通过离子植入隔离制造LED
    • US20090309124A1
    • 2009-12-17
    • US12507288
    • 2009-07-22
    • Yifeng WuGerald H. NegleyDavid B. Slater, JR.Valeri F. TsvetkovAlexander Suvorov
    • Yifeng WuGerald H. NegleyDavid B. Slater, JR.Valeri F. TsvetkovAlexander Suvorov
    • H01L33/00
    • H01L33/32H01L33/305
    • A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
    • 半导体发光二极管包括半导体衬底,衬底上的n型III族氮化物的外延层,n型外延层上的III族氮化物的p型外延层,并与n型外延层形成pn结, 型层和n型外延层上的电阻性氮化镓区,并且邻近p型外延层,用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 在公开的方法实施例中,通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。