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1. 发明申请

US20090314633A1 ELECTRON BEAM ENHANCED LARGE AREA DEPOSITION SYSTEM 审中-公开
标题翻译：电子束增强大面积沉积系统
公开(公告)号：US20090314633A1
公开(公告)日：2009-12-24
申请号：US12548510
申请日：2009-08-27
申请人： Scott G. Walton , Darrin Leonhardt , Robert A. Meger , Richard Fernsler , Christopher Muratore
发明人： Scott G. Walton , Darrin Leonhardt , Robert A. Meger , Richard Fernsler , Christopher Muratore
IPC分类号： C23C14/34 , C23C14/22
CPC分类号： C23C14/3478
摘要： This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters.
摘要翻译：本发明提供了使用电子束产生的等离子体在薄膜上沉积薄膜和涂层的方法。等离子体可用作溅射应用中的离子源，其中离子用于从目标表面释放材料，然后可将其冷凝在基底上以形成膜或涂层。或者，等离子体可以与现有的沉积源组合，包括基于溅射或蒸发技术的沉积源。在任一种配置中，等离子体在反应沉积过程中作为生长膜表面的离子和自由基物质的来源。电子束大面积沉积系统（EBELADS）是生产直到并包括几平方米的薄膜或涂层的新方法。

2. 发明申请

US20090032143A1 ELECTRON BEAM ENHANCED NITRIDING SYSTEM 审中-公开
标题翻译：电子束增强氮化系统
公开(公告)号：US20090032143A1
公开(公告)日：2009-02-05
申请号：US12182231
申请日：2008-07-30
申请人： Scott G Walton , Darrin Leonhardt , Robert A. Meger , Richard F. Fernsler , Christopher Muratore
发明人： Scott G Walton , Darrin Leonhardt , Robert A. Meger , Richard F. Fernsler , Christopher Muratore
IPC分类号： C23C8/36 , C23C16/513 , C23C8/24
CPC分类号： H01J37/3233 , C23C8/36 , H01J37/32009 , H01J2237/3387 , H05H1/26 , H05H2245/123
摘要： An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
摘要翻译：电子束增强氮化系统，其使高能电子束通过氮气，形成能够将氮离子和自由基输送到被氮化的衬底的低电子温度等离子体。衬底可以安装在电极上，并且衬底可被偏置和加热。

3. 发明申请

US20110308461A1 Electron Beam Enhanced Nitriding System (EBENS) 审中-公开
标题翻译：电子束增强氮化系统（EBENS）
公开(公告)号：US20110308461A1
公开(公告)日：2011-12-22
申请号：US12857560
申请日：2010-08-17
申请人： Scott G. Walton , Darrin Leonhardt , Robert A. Meger , Richard Fernsler , Christopher Muratore
发明人： Scott G. Walton , Darrin Leonhardt , Robert A. Meger , Richard Fernsler , Christopher Muratore
IPC分类号： C23C8/24 , C23C8/26 , C23C8/36
CPC分类号： H01J37/3233 , C23C8/36 , H01J37/32009 , H01J2237/3387 , H05H1/26 , H05H2245/123
摘要： An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
摘要翻译：电子束增强氮化系统，其使高能电子束通过氮气，形成能够将氮离子和自由基输送到被氮化的衬底的低电子温度等离子体。衬底可以安装在电极上，并且衬底可被偏置和加热。

4. 依法登记的发明

USH2209H1 Large area metallization pretreatment and surface activation system 有权
公开(公告)号：USH2209H1
公开(公告)日：2008-02-05
申请号：US10825800
申请日：2004-04-14
申请人： Darrin Leonhardt , Scott G. Walton , Robert A. Meger , Christopher Muratore
发明人： Darrin Leonhardt , Scott G. Walton , Robert A. Meger , Christopher Muratore
IPC分类号： C23C14/32
摘要： A large area metallization pretreatment and surface activation system that uses an electron beam-produced plasma capable of delivering substantial ion and radical fluxes at low temperatures over large areas of an organic plastic or polymer material. The ion and radical fluxes physically and chemically alter the surface structure of the organic plastic or polymer material thereby improving the ability of a film to adhere to the material.

5. 发明申请

US20110080093A1 Apparatus and Method for Regulating the Output of a Plasma Electron Beam Source 有权
标题翻译：用于调节等离子体电子束源的输出的装置和方法
公开(公告)号：US20110080093A1
公开(公告)日：2011-04-07
申请号：US12899012
申请日：2010-10-06
申请人： Scott G. Walton , Christopher D. Cothran , Richard F. Fernsler , Robert A. Meger , William E. Amatucci
发明人： Scott G. Walton , Christopher D. Cothran , Richard F. Fernsler , Robert A. Meger , William E. Amatucci
IPC分类号： H05B31/26
CPC分类号： H01J3/025 , H01J15/02
摘要： An apparatus and method for controlling electron flow within a plasma to produce a controlled electron beam is provided. A plasma is formed between a cathode and an acceleration anode. A control anode is connected to the plasma and to the acceleration anode via a switch. If the switch is open, the ions from the plasma flow to the cathode and plasma electrons flow to the acceleration anode. With the acceleration anode suitably transparent and negatively biased with a DC high voltage source, the electrons flowing from the plasma are accelerated to form an electron beam. If the switch is closed, the ions still flow to the cathode but the electrons flow to the control anode rather than the acceleration anode. Consequently, the electron beam is turned off, but the plasma is unaffected. By controlling the opening and closing of the switch, a controlled pulsed electron beam can be generated.
摘要翻译：提供了一种用于控制等离子体内的电子流以产生受控电子束的装置和方法。在阴极和加速度阳极之间形成等离子体。控制阳极通过开关连接到等离子体和加速器阳极。如果开关断开，来自等离子体的离子流向阴极，等离子体电子流向加速度阳极。由于采用直流高电压源加速阳极适当地透明和负偏压，所以从等离子体流出的电子被加速以形成电子束。如果开关闭合，离子仍然流到阴极，但电子流向控制阳极，而不是加速阳极。因此，电子束被关闭，但是等离子体不受影响。通过控制开关的打开和关闭，可以产生受控的脉冲电子束。

6. 发明授权

US08288950B2 Apparatus and method for regulating the output of a plasma electron beam source 有权
标题翻译：用于调节等离子体电子束源的输出的装置和方法
公开(公告)号：US08288950B2
公开(公告)日：2012-10-16
申请号：US12899012
申请日：2010-10-06
申请人： Scott G. Walton , Christopher D. Cothran , Richard F. Fernsler , Robert A. Meger , William E. Amatucci
发明人： Scott G. Walton , Christopher D. Cothran , Richard F. Fernsler , Robert A. Meger , William E. Amatucci
IPC分类号： H05B31/26
CPC分类号： H01J3/025 , H01J15/02
摘要： An apparatus and method for controlling electron flow within a plasma to produce a controlled electron beam is provided. A plasma is formed between a cathode and an acceleration anode. A control anode is connected to the plasma and to the acceleration anode via a switch. If the switch is open, the ions from the plasma flow to the cathode and plasma electrons flow to the acceleration anode. With the acceleration anode suitably transparent and negatively biased with a DC high voltage source, the electrons flowing from the plasma are accelerated to form an electron beam. If the switch is closed, the ions still flow to the cathode but the electrons flow to the control anode rather than the acceleration anode. Consequently, the electron beam is turned off, but the plasma is unaffected. By controlling the opening and closing of the switch, a controlled pulsed electron beam can be generated.
摘要翻译：提供了一种用于控制等离子体内的电子流以产生受控电子束的装置和方法。在阴极和加速度阳极之间形成等离子体。控制阳极通过开关连接到等离子体和加速器阳极。如果开关断开，来自等离子体的离子流向阴极，等离子体电子流向加速度阳极。由于采用直流高电压源加速阳极适当地透明和负偏压，所以从等离子体流出的电子被加速以形成电子束。如果开关闭合，离子仍然流到阴极，但电子流向控制阳极，而不是加速阳极。因此，电子束被关闭，但是等离子体不受影响。通过控制开关的打开和关闭，可以产生受控的脉冲电子束。

7. 发明授权

US5182496A Method and apparatus for forming an agile plasma mirror effective as a microwave reflector 失效
标题翻译：用于形成作为微波反射器有效的敏捷等离子体反射镜的方法和装置
公开(公告)号：US5182496A
公开(公告)日：1993-01-26
申请号：US867862
申请日：1992-04-07
申请人： Wallace M. Manheimer , Anthony E. Robson , Robert A. Meger
发明人： Wallace M. Manheimer , Anthony E. Robson , Robert A. Meger
IPC分类号： H05H1/10
CPC分类号： H05H1/10 , Y02E30/126
摘要： A method and apparatus for forming plasma sheets of preselected planar curvature, which can be used as mirrors for X-Band microwaves and above. A plasma is created using a shaped cathode. Confining magnetic fields maintains the plasma in the shape of the cathode. Additional magnetic fields can provide additional curvature to the plasma sheet.
摘要翻译：一种用于形成预选平面曲率的等离子体片的方法和装置，其可用作X波段微波及其以上的反射镜。使用成形阴极产生等离子体。限制磁场将等离子体保持为阴极的形状。额外的磁场可以为等离子体片提供额外的曲率。

8. 发明授权

US5856630A High velocity electromagnetic mass launcher having an ablation resistant insulator 失效
标题翻译：具有耐烧蚀绝缘体的高速电磁质量发射器
公开(公告)号：US5856630A
公开(公告)日：1999-01-05
申请号：US252474
申请日：1994-06-01
申请人： Robert A. Meger
发明人： Robert A. Meger
IPC分类号： F41B6/00
CPC分类号： F41B6/006
摘要： A railgun having a composite insulator of laminated materials positioned between the rails. The composite insulator is comprised of a series of conducting layers oriented with the edges toward the bore, or barrel, of the railgun and their wide edges away from the bore. The laminate is layed lengthwise along the rails and is comprised of conducting layers of a high heat conductivity metal interleaved with an insulator material. The insulator material allows the composite insulator to stand off the voltages in a plasma armature even under high radiation flux conditions. Below the conducting material's ablation threshold the amount of ablation produced by the composite insulator is reduced by the reduction of insulator surface area exposed to the radiation. This allows better control of armature growth, mass acceleration by the plasma armature, secondary formation, and other factors normally found to retard projectile acceleration.
摘要翻译：轨道枪具有位于轨道之间的层压材料的复合绝缘体。复合绝缘体包括一系列导电层，导电层的边缘朝向轨道枪的孔或筒，并且其宽边远离孔。层压板沿着导轨沿纵向铺设，并由与绝缘体材料交错的高导热性金属的导电层组成。即使在高辐射通量条件下，绝缘体材料也允许复合绝缘体脱离等离子体电枢中的电压。在导电材料的消融阈值以下，由复合绝缘子产生的消融量通过暴露于辐射的绝缘体表面积的减小来减少。这允许更好地控制电枢生长，通过等离子体电枢的质量加速，二次形成以及通常发现延迟弹丸加速度的其他因素。

9. 发明授权

US5844161A High velocity electromagnetic mass launcher having an ablation resistant insulator 失效
公开(公告)号：US5844161A
公开(公告)日：1998-12-01
申请号：US54268
申请日：1998-04-03
申请人： Robert A. Meger
发明人： Robert A. Meger
IPC分类号： F41B6/00
CPC分类号： F41B6/006
摘要： A railgun having a composite insulator of laminated materials positioned between the rails. The composite insulator is comprised of a series of conducting layers oriented with the edges toward the bore, or barrel, of the railgun and their wide edges away from the bore. The laminate is layed lengthwise along the rails and is comprised of conducting layers of a high heat conductivity metal interleaved with an insulator material. The insulator material allows the composite insulator to stand off the voltages in a plasma armature even under high radiation flux conditions. Below the conducting material's ablation threshold the amount of ablation produced by the composite insulator is reduced by the reduction of insulator surface area exposed to the radiation. This allows better control of armature growth, mass acceleration by the plasma armature, secondary formation, and other factors normally found to retard projectile acceleration.

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