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    • 7. 发明授权
    • Method of forming thin film transistor substrate
    • 薄膜晶体管基板的形成方法
    • US07358125B2
    • 2008-04-15
    • US11692119
    • 2007-03-27
    • You Jin Kim
    • You Jin Kim
    • H01L21/00
    • H01L29/41733H01L27/12H01L27/1244H01L27/1248
    • A thin film transistor substrate and a fabricating method thereof wherein a contacting size between an electrode and an active layer can be reduced to provide a small and light panel. In the thin film transistor substrate, a conductive layer is formed on the substrate. A first insulating layer for insulating the conductive layer overlies the conductive layer. A second insulating layer this is different from the first insulating layer overlies the first insulating layer. A third insulating layer overlies the second insulating layer. A contact through the first, second, and third insulating layers exposes a portion of the conductive layer and has a trapezoidal section. An electrode is connected to the conductive layer and overlies a portion of an inclined face of the contact hole. The inclined face of the contact hole includes a protrusion formed by a portion of the second insulating layer and creates an overhang structure.
    • 一种薄膜晶体管基板及其制造方法,其中可以减小电极和有源层之间的接触尺寸,以提供小型和轻型的面板。 在薄膜晶体管基板中,在基板上形成导电层。 用于绝缘导电层的第一绝缘层覆盖在导电层上。 与第一绝缘层不同的第二绝缘层覆盖在第一绝缘层上。 第三绝缘层覆盖在第二绝缘层上。 通过第一,第二和第三绝缘层的接触暴露导电层的一部分并具有梯形截面。 电极连接到导电层并且覆盖在接触孔的倾斜面的一部分上。 接触孔的倾斜面包括由第二绝缘层的一部分形成的突出部,并形成突出结构。
    • 8. 发明授权
    • Thin film transistor substrate and fabricating method thereof
    • 薄膜晶体管基板及其制造方法
    • US07262454B2
    • 2007-08-28
    • US11152960
    • 2005-06-15
    • You Jin Kim
    • You Jin Kim
    • H01L27/108
    • H01L29/41733H01L27/12H01L27/1244H01L27/1248
    • A thin film transistor substrate and a fabricating method thereof wherein a contacting size between an electrode and an active layer can be reduced to provide a small and light panel. In the thin film transistor substrate, a conductive layer is formed on the substrate. A first insulating layer for insulating the conductive layer overlies the conductive layer. A second insulating layer this is different from the first insulating layer overlies the first insulating layer. A third insulating layer overlies the second insulating layer. A contact through the first, second, and third insulating layers exposes a portion of the conductive layer and has a trapezoidal section. An electrode is connected to the conductive layer and overlies a portion of an inclined face of the contact hole. The inclined face of the contact hole includes a protrusion formed by a portion of the second insulating layer and creates an overhang structure.
    • 一种薄膜晶体管基板及其制造方法,其中可以减小电极和有源层之间的接触尺寸,以提供小型和轻型的面板。 在薄膜晶体管基板中,在基板上形成导电层。 用于绝缘导电层的第一绝缘层覆盖在导电层上。 与第一绝缘层不同的第二绝缘层覆盖在第一绝缘层上。 第三绝缘层覆盖在第二绝缘层上。 通过第一,第二和第三绝缘层的接触暴露导电层的一部分并具有梯形截面。 电极连接到导电层并且覆盖在接触孔的倾斜面的一部分上。 接触孔的倾斜面包括由第二绝缘层的一部分形成的突出部,并形成突出结构。