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1. 发明申请

US20110235455A1 VOLTAGE REGULATORS, AMPLIFIERS, MEMORY DEVICES AND METHODS 有权
标题翻译：电压调节器，放大器，存储器件和方法
公开(公告)号：US20110235455A1
公开(公告)日：2011-09-29
申请号：US12749281
申请日：2010-03-29
申请人： DONG PAN
发明人： DONG PAN
IPC分类号： G11C5/14 , H03F1/34
CPC分类号： H03F3/45071 , G11C5/147 , G11C7/06 , G11C7/065 , G11C7/12 , G11C11/4091 , G11C11/4097 , H03F3/45183 , H03F2203/45264
摘要： Circuits, devices and methods are provided, such as an amplifier (e.g., a voltage regulator) that includes a feedback circuit that supplies negative feedback through a feedback path. One such feedback path includes a capacitance coupled in series with a “one-way” isolation circuit through which a feedback signal is coupled. The “one-way” isolation circuit may allow the feedback signal to be coupled from a “downstream” node, such as an output node, to an “upstream” node, such as a node at which an error signal is generated to provide negative feedback. However, the “one-way” isolation circuit may substantially prevent variations in the voltage at the upstream node from being coupled to the capacitance in the isolation circuit. As a result, the voltage at the upstream node may quickly change since charging and discharging of the capacitance responsive to voltage variations at the upstream node may be avoided.
摘要翻译：提供了电路，装置和方法，例如放大器（例如，电压调节器），其包括通过反馈路径提供负反馈的反馈电路。一个这样的反馈路径包括与“单向”隔离电路串联耦合的电容，通过该电路耦合反馈信号。 “单向”隔离电路可以允许反馈信号从诸如输出节点的“下游”节点耦合到“上游”节点，例如产生误差信号以产生负值的节点反馈。然而，“单向”隔离电路可以基本上防止上游节点处的电压变化与隔离电路中的电容耦合。结果，可以避免上游节点处的电压响应于上游节点处的电压变化而对电容进行充电和放电，所以上游节点处的电压可能快速变化。

2. 发明申请

US20100188921A1 VOLTAGE PROTECTION CIRCUIT FOR THIN OXIDE TRANSISTORS, AND MEMORY DEVICE AND PROCESSOR-BASED SYSTEM USING SAME 有权
标题翻译：用于薄氧化物晶体管的电压保护电路，以及使用其的存储器件和基于处理器的系统
公开(公告)号：US20100188921A1
公开(公告)日：2010-07-29
申请号：US12726167
申请日：2010-03-17
申请人： DONG PAN
发明人： DONG PAN
IPC分类号： G11C5/14 , G05F1/569 , G05F3/16 , H03K3/00
CPC分类号： G05F1/565 , G11C5/147 , G11C7/04 , G11C16/30
摘要： Devices, reference voltage generators, systems and methods are disclosed, including an embodiment of a voltage regulator output transistor using a thin gate insulator to provide a low output impedance despite having a semiconductor channel width that is relatively small. The output transistor is protected from damage by a clamping circuit provided to limit the gate-to-source voltage of the transistor such that damage to the output transistor should be reduced or prevented. One such clamping circuit includes a clamp transistor that receives a reference voltage at its gate. The magnitude of the reference voltage limits to voltage to which the gate of the transistor can be driven. A voltage reference circuit provides the reference voltage so that it compensates for process and temperature variations of the output transistor.
摘要翻译：公开了设备，参考电压发生器，系统和方法，包括使用薄栅绝缘体提供低输出阻抗的电压调节器输出晶体管的实施例，尽管半导体沟道宽度相对较小。保护输出晶体管免受由限制晶体管的栅极 - 源极电压的钳位电路的损坏，从而减小或防止输出晶体管的损坏。一个这样的钳位电路包括在其门处接收参考电压的钳位晶体管。参考电压的大小限制于可以驱动晶体管的栅极的电压。电压参考电路提供参考电压，以便它补偿输出晶体管的工艺和温度变化。

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