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1. 发明授权

US07871742B2 Method for controlling phase angle of a mask by post-treatment 有权
标题翻译：通过后处理控制面罩的相位角的方法
公开(公告)号：US07871742B2
公开(公告)日：2011-01-18
申请号：US11697015
申请日：2007-04-05
申请人： Chun-Lang Chen , Tran-Hui Shen , Fei-Gwo Tsai , Chien-Chao Huang
发明人： Chun-Lang Chen , Tran-Hui Shen , Fei-Gwo Tsai , Chien-Chao Huang
IPC分类号： G03F1/00
CPC分类号： G03F1/26 , G03F1/32
摘要： A method for controlling phase angle of a mask is provided. A mask comprising a substrate and an absorber is formed. A nitrogen-containing plasma treatment is performed on the mask to reduce the phase angle. Alternatively, a nitrogen-containing plasma treatment is performed on the mask, followed by a vacuum ultraviolet treatment to form a passivated layer on the mask.
摘要翻译：提供了一种用于控制掩模的相位角的方法。形成包括基板和吸收体的掩模。对掩模进行含氮等离子体处理以减小相位角。或者，对掩模进行含氮等离子体处理，然后进行真空紫外线处理，以在掩模上形成钝化层。

2. 发明申请

US20080248404A1 Method for Controlling Phase Angle of a Mask by Post-Treatment 有权
标题翻译：通过后处理控制面膜相位角的方法
公开(公告)号：US20080248404A1
公开(公告)日：2008-10-09
申请号：US11697015
申请日：2007-04-05
申请人： Chun-Lang Chen , Tran-Hui Shen , Fei-Gwo Tsai , Chien-Chao Huang
发明人： Chun-Lang Chen , Tran-Hui Shen , Fei-Gwo Tsai , Chien-Chao Huang
IPC分类号： G03F1/00
CPC分类号： G03F1/26 , G03F1/32
摘要： A method for controlling phase angle of a mask is provided. A mask comprising a substrate and an absorber is formed. A nitrogen-containing plasma treatment is performed on the mask to reduce the phase angle. Alternatively, a nitrogen-containing plasma treatment is performed on the mask, followed by a vacuum ultraviolet treatment to form a passivated layer on the mask.
摘要翻译：提供了一种用于控制掩模的相位角的方法。形成包括基板和吸收体的掩模。对掩模进行含氮等离子体处理以减小相位角。或者，对掩模进行含氮等离子体处理，然后进行真空紫外线处理，以在掩模上形成钝化层。

3. 发明申请

US20130193565A1 SEMICONDUCTOR MASK BLANKS WITH A COMPATIBLE STOP LAYER 有权
标题翻译： SEMICONDUCTOR MASK BLANKS与相容的停止层
公开(公告)号：US20130193565A1
公开(公告)日：2013-08-01
申请号：US13362818
申请日：2012-01-31
申请人： Chih-Chiang Tu , Chun-Lang Chen , Boming Hsu , Tran-Hui Shen
发明人： Chih-Chiang Tu , Chun-Lang Chen , Boming Hsu , Tran-Hui Shen
IPC分类号： H01L23/58 , H01L21/302 , H01L21/31
CPC分类号： H01L21/0332 , G03F1/26 , G03F1/46 , H01L21/0337 , H01L21/31 , H01L21/31116 , H01L22/26
摘要： Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.
摘要翻译：提供了一种用于创建包括停止层的掩模坯料的方法。停止层是光学兼容的，并且与作为掩模坯料的一部分包括的其它层的工艺兼容。这样的空白可以包括EUV，相移或OMOG掩模。停止层包括钼，硅和氮化物，其比例允许相容性，并有助于残留气体分析仪的检测。还提供了具有停止层的掩模坯料图案化的方法，特别是用于去除由于先前的掩模制造步骤中的问题而可能发生的半透明残留缺陷的方法。该方法包括用残留气体分析仪检测包含的材料。还提供了一种掩模空白结构，其结合了相容的停止层。

4. 发明授权

US08715890B2 Semiconductor mask blanks with a compatible stop layer 有权
标题翻译：具有兼容停止层的半导体掩模板
公开(公告)号：US08715890B2
公开(公告)日：2014-05-06
申请号：US13362818
申请日：2012-01-31
申请人： Chih-Chiang Tu , Chun-Lang Chen , Boming Hsu , Tran-Hui Shen
发明人： Chih-Chiang Tu , Chun-Lang Chen , Boming Hsu , Tran-Hui Shen
IPC分类号： G03F1/00
CPC分类号： H01L21/0332 , G03F1/26 , G03F1/46 , H01L21/0337 , H01L21/31 , H01L21/31116 , H01L22/26
摘要： Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.
摘要翻译：提供了一种用于创建包括停止层的掩模坯料的方法。停止层是光学兼容的，并且与作为掩模坯料的一部分包括的其它层的工艺兼容。这样的空白可以包括EUV，相移或OMOG掩模。停止层包括钼，硅和氮化物，其比例允许相容性，并有助于残留气体分析仪的检测。还提供了具有停止层的掩模坯料图案化的方法，特别是用于去除由于先前的掩模制造步骤中的问题而可能发生的半透明残留缺陷的方法。该方法包括用残留气体分析仪检测包含的材料。还提供了一种掩模空白结构，其结合了相容的停止层。

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