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1. 发明授权

US07510964B2 Method for manufacturing semiconductor device that includes baking a dielectric layer after exposure to plasma 有权
标题翻译：制造半导体器件的方法，其包括在暴露于等离子体之后烘烤电介质层
公开(公告)号：US07510964B2
公开(公告)日：2009-03-31
申请号：US11307165
申请日：2006-01-26
申请人： Chih-Jen Mao , Kuo-Wei Yang , Hui-Shen Shih , Chun-Han Chuang
发明人： Chih-Jen Mao , Kuo-Wei Yang , Hui-Shen Shih , Chun-Han Chuang
IPC分类号： H01L21/477
CPC分类号： H01L21/76828 , H01L21/76814
摘要： The invention is directed to a method for manufacturing semiconductor device. The method comprises steps of providing a substrate and then forming a dielectric material-containing device over the substrate. A plasma vapor deposition process is performed to form a dielectric layer over the substrate. A first baking process is performed.
摘要翻译：本发明涉及半导体器件的制造方法。该方法包括以下步骤：提供衬底，然后在衬底上形成含介电材料的器件。进行等离子体气相沉积工艺以在衬底上形成电介质层。进行第一烘焙处理。

2. 发明申请

US20080075852A1 METHOD OF CLEANING REACTION CHAMBER, METHOD OF FORMING PROTECTION FILM AND PROTECTION WAFER 有权
标题翻译：清洁反应室的方法，形成保护膜和保护膜的方法
公开(公告)号：US20080075852A1
公开(公告)日：2008-03-27
申请号：US11535072
申请日：2006-09-26
申请人： Chih-Jen Mao , Chun-Hung Hsia , Ta-Ching Yang , Chun-Cheng Yu , Chien-Fu Chu , Kuo-Wei Yang , Chun-Han Chuang , Hui-Shen Shih
发明人： Chih-Jen Mao , Chun-Hung Hsia , Ta-Ching Yang , Chun-Cheng Yu , Chien-Fu Chu , Kuo-Wei Yang , Chun-Han Chuang , Hui-Shen Shih
IPC分类号： B08B9/00 , B05D7/22 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/4404
摘要： A method of cleaning a reaction chamber having a wafer holder is provided. First, the reaction chamber is cleaned by a cleaning gas. Next, a protection film is formed on the inner surface of the reaction chamber, wherein a gap is formed between the protection wafer and the wafer holder, and a cooling gas is guided therebetween simultaneously.
摘要翻译：提供了一种清洁具有晶片保持器的反应室的方法。首先，通过清洁气体清洁反应室。接下来，在反应室的内表面上形成保护膜，其中在保护晶片和晶片保持器之间形成间隙，同时在其间引导冷却气体。

3. 发明申请

US20070173065A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070173065A1
公开(公告)日：2007-07-26
申请号：US11307165
申请日：2006-01-26
申请人： Chih-Jen Mao , Kuo-Wei Yang , Hui-Shen Shih , Chun-Han Chuang
发明人： Chih-Jen Mao , Kuo-Wei Yang , Hui-Shen Shih , Chun-Han Chuang
IPC分类号： H01L21/469
CPC分类号： H01L21/76828 , H01L21/76814
摘要： The invention is directed to a method for manufacturing semiconductor device. The method comprises steps of providing a substrate and then forming a dielectric material-containing device over the substrate. A plasma vapor deposition process is performed to form a dielectric layer over the substrate. A first baking process is performed.
摘要翻译：本发明涉及半导体器件的制造方法。该方法包括以下步骤：提供衬底，然后在衬底上形成含介电材料的器件。进行等离子体气相沉积工艺以在衬底上形成电介质层。进行第一烘焙处理。

4. 发明授权

US07732009B2 Method of cleaning reaction chamber, method of forming protection film and protection wafer 有权
标题翻译：清洗反应室的方法，形成保护膜和保护晶片的方法
公开(公告)号：US07732009B2
公开(公告)日：2010-06-08
申请号：US11535072
申请日：2006-09-26
申请人： Chih-Jen Mao , Chun-Hung Hsia , Ta-Ching Yang , Chun-Cheng Yu , Chien-Fu Chu , Kuo-Wei Yang , Chun-Han Chuang , Hui-Shen Shih
发明人： Chih-Jen Mao , Chun-Hung Hsia , Ta-Ching Yang , Chun-Cheng Yu , Chien-Fu Chu , Kuo-Wei Yang , Chun-Han Chuang , Hui-Shen Shih
IPC分类号： C23C16/00 , B08B9/00 , B05D7/22
CPC分类号： C23C16/4405 , C23C16/4404
摘要： A method of cleaning a reaction chamber having a wafer holder is provided. First, the reaction chamber is cleaned by a cleaning gas. Next, a protection film is formed on the inner surface of the reaction chamber, wherein a gap is formed between the protection wafer and the wafer holder, and a cooling gas is guided therebetween simultaneously.
摘要翻译：提供了一种清洁具有晶片保持器的反应室的方法。首先，通过清洁气体清洁反应室。接下来，在反应室的内表面上形成保护膜，其中在保护晶片和晶片保持器之间形成间隙，同时在其间引导冷却气体。

5. 发明授权

US07482244B2 Method of preventing a peeling issue of a high stressed thin film 有权
标题翻译：防止高应力薄膜剥离问题的方法
公开(公告)号：US07482244B2
公开(公告)日：2009-01-27
申请号：US11162605
申请日：2005-09-16
申请人： Chih-Jen Mao , Hui-Shen Shih , Kuo-Wei Yang , Chun-Han Chuang , Chun-Hung Hsia
发明人： Chih-Jen Mao , Hui-Shen Shih , Kuo-Wei Yang , Chun-Han Chuang , Chun-Hung Hsia
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A wafer including a high stressed thin film thereon is lifted, and a pre-heating process is performed while the wafer is lifted. Subsequently, a dielectric layer is deposited on the high stressed thin film.
摘要翻译：提起其上包括高应力薄膜的晶片，并且在晶片被提升时执行预热处理。随后，在高应力薄膜上沉积介电层。

6. 发明申请

US20070066026A1 METHOD OF PREVENTING A PEELING ISSUE OF A HIGH STRESSED THIN FILM 有权
标题翻译：防止发生高应力薄膜剥离的方法
公开(公告)号：US20070066026A1
公开(公告)日：2007-03-22
申请号：US11162605
申请日：2005-09-16
申请人： Chih-Jen Mao , Hui-Shen Shih , Kuo-Wei Yang , Chun-Han Chuang , Chun-Hung Hsia
发明人： Chih-Jen Mao , Hui-Shen Shih , Kuo-Wei Yang , Chun-Han Chuang , Chun-Hung Hsia
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A wafer including a high stressed thin film thereon is lifted, and a pre-heating process is performed while the wafer is lifted. Subsequently, a dielectric layer is deposited on the high stressed thin film.
摘要翻译：提起其上包括高应力薄膜的晶片，并且在晶片被提升时执行预热处理。随后，在高应力薄膜上沉积介电层。

7. 发明授权

US07909677B2 Method of transferring a wafer 有权
公开(公告)号：US07909677B2
公开(公告)日：2011-03-22
申请号：US11748477
申请日：2007-05-14
申请人： Kuo-Wei Yang , Hui-Shen Shih , Chih-Jen Mao , Cho-Long Lin
发明人： Kuo-Wei Yang , Hui-Shen Shih , Chih-Jen Mao , Cho-Long Lin
IPC分类号： B24B1/00
CPC分类号： B24B37/345
摘要： A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid.

8. 发明授权

US08142258B2 Method of transferring a wafer 有权
标题翻译：转印晶片的方法
公开(公告)号：US08142258B2
公开(公告)日：2012-03-27
申请号：US12964716
申请日：2010-12-09
申请人： Kuo-Wei Yang , Hui-Shen Shih , Chih-Jen Mao , Cho-Long Lin
发明人： Kuo-Wei Yang , Hui-Shen Shih , Chih-Jen Mao , Cho-Long Lin
IPC分类号： B24B1/00
CPC分类号： B24B37/345
摘要： A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid.
摘要翻译：公开了一种转印晶片的方法。该方法包括提供一个基座和至少一个延伸穿过基座的喷嘴; 使用第一机器人在基座上方设置晶片，其中晶片具有第一表面和第二表面，第一表面面向基座，流体同时喷射到第一表面上，以避免第一表面与基座接触流体含有溶解于其中的成电化学物质; 并使用机器人取出晶片进行交付。由于溶解在流体中的成电化学物质，在喷射流体时避免了在晶片上引起放电损坏的瀑布效应。

9. 发明申请

US20110076129A1 Method of transferring a wafer 有权
标题翻译：转印晶片的方法
公开(公告)号：US20110076129A1
公开(公告)日：2011-03-31
申请号：US12964716
申请日：2010-12-09
申请人： Kuo-Wei Yang , Hui-Shen Shih , Chih-Jen Mao , Cho-Long Lin
发明人： Kuo-Wei Yang , Hui-Shen Shih , Chih-Jen Mao , Cho-Long Lin
IPC分类号： B65G47/22
CPC分类号： B24B37/345
摘要： A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid.
摘要翻译：公开了一种转印晶片的方法。该方法包括提供一个基座和至少一个延伸穿过基座的喷嘴; 使用第一机器人在基座上方设置晶片，其中晶片具有第一表面和第二表面，第一表面面向基座，流体同时喷射到第一表面上，以避免第一表面与基座接触流体含有溶解于其中的成电化学物质; 并使用机器人取出晶片进行交付。由于溶解在流体中的成电化学物质，在喷射流体时避免了在晶片上引起放电损坏的瀑布效应。

10. 发明申请

US20080287044A1 Method of transferring a wafer 有权
标题翻译：转印晶片的方法
公开(公告)号：US20080287044A1
公开(公告)日：2008-11-20
申请号：US11748477
申请日：2007-05-14
申请人： Kuo-Wei Yang , Hui-Shen Shih , Chih-Jen Mao , Cho-Long Lin
发明人： Kuo-Wei Yang , Hui-Shen Shih , Chih-Jen Mao , Cho-Long Lin
IPC分类号： B24B7/04
CPC分类号： B24B37/345
摘要： A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid.
摘要翻译：公开了一种转印晶片的方法。该方法包括提供一个基座和至少一个延伸穿过基座的喷嘴; 使用第一机器人在基座上方设置晶片，其中晶片具有第一表面和第二表面，第一表面面向基座，流体同时喷射到第一表面上，以避免第一表面与基座接触流体含有溶解于其中的成电化学物质; 并使用机器人取出晶片进行交付。由于溶解在流体中的成电化学物质，在喷射流体时避免了在晶片上引起放电损坏的瀑布效应。

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