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1. 发明申请

US20080054793A1 White light-emitting apparatus 审中-公开
标题翻译：白色发光装置
公开(公告)号：US20080054793A1
公开(公告)日：2008-03-06
申请号：US11808863
申请日：2007-06-13
申请人： Chih-Chieh Yang , Chih-Min Lin , Yi-Jung Chen , Ru-Shi Liu
发明人： Chih-Chieh Yang , Chih-Min Lin , Yi-Jung Chen , Ru-Shi Liu
IPC分类号： H01L51/50
CPC分类号： C09K11/7721 , C09K11/0883 , C09K11/7734 , H01L33/502 , Y02B20/181
摘要： A white light-emitting apparatus including a light-emitting device, a nitride fluorescent material and an oxynitride fluorescent material is provided. The light-emitting device is capable of generating a first color light having a first wavelength range. The nitride fluorescent material and the oxynitride fluorescent material cover the light-emitting device. The nitride and oxynitride fluorescent material are excited by the first color light, and further generate a second color light having a second wavelength range and a third color light having a third wavelength range, respectively. The first, second and third color lights are mixed together to generate a white light. A white light-emitting diode is also disclosed.
摘要翻译：提供了包括发光器件，氮化物荧光材料和氧氮化物荧光材料的白色发光设备。发光装置能够产生具有第一波长范围的第一色光。氮化物荧光材料和氧氮化物荧光材料覆盖发光器件。氮化物和氧氮化物荧光材料被第一色光激发，并且还分别产生具有第二波长范围的第二颜色光和具有第三波长范围的第三颜色光。将第一，第二和第三色光混合在一起产生白光。还公开了一种白色发光二极管。

2. 发明授权

US08662950B2 White-light emitting device and preparation method and application of the same 有权
标题翻译：白光发射装置及其制备方法及应用相同
公开(公告)号：US08662950B2
公开(公告)日：2014-03-04
申请号：US13651069
申请日：2012-10-12
申请人： Yi-Jung Chen , Chih-Chieh Yang , Chin-Chang Shen , Ru-Shi Liu
发明人： Yi-Jung Chen , Chih-Chieh Yang , Chin-Chang Shen , Ru-Shi Liu
IPC分类号： H01L51/56 , H01L51/54
CPC分类号： C09K11/06 , C09K11/7733 , C09K11/7734 , C09K2211/1044 , C09K2211/188 , H01L33/502 , H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H05B33/14 , Y02B20/181 , H01L2924/00014
摘要： A white-light emitting device and its preparation method are provided. The white-light emitting device comprises an ultraviolet (UV) light emitting diode (LED) chip, a first phosphor, and a second phosphor, wherein the UV LED chip generates a first radiation; the first phosphor is composed of Zn(C3N2H4)2 powder and is excited by the first radiation to generate a second radiation; and the second phosphor is excited by the first radiation and/or the second radiation to generate a third radiation. The third radiation is then mixed with the first radiation and/or the second radiation to generate a white light.
摘要翻译：提供了一种白光发射装置及其制备方法。白光发射装置包括紫外（UV）发光二极管（LED）芯片，第一荧光体和第二荧光体，其中UV LED芯片产生第一辐射; 第一荧光体由Zn（C 3 N 2 H 4）2粉末组成，并被第一辐射激发以产生第二辐射; 并且第二荧光体被第一辐射和/或第二辐射激发以产生第三辐射。然后将第三辐射与第一辐射和/或第二辐射混合以产生白光。

3. 发明授权

US08314543B2 White-light emitting device and preparation method and application of the same 失效
标题翻译：白光发射装置及其制备方法及应用相同
公开(公告)号：US08314543B2
公开(公告)日：2012-11-20
申请号：US12898169
申请日：2010-10-05
申请人： Yi-Jung Chen , Chih-Chieh Yang , Chin-Chang Shen , Ru-Shi Liu
发明人： Yi-Jung Chen , Chih-Chieh Yang , Chin-Chang Shen , Ru-Shi Liu
IPC分类号： H01J1/62
CPC分类号： C09K11/06 , C09K11/7733 , C09K11/7734 , C09K2211/1044 , C09K2211/188 , H01L33/502 , H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H05B33/14 , Y02B20/181 , H01L2924/00014
摘要： A white-light emitting device and its preparation method are provided. The white-light emitting device comprises an ultraviolet (UV) light emitting diode (LED) chip, a first phosphor, and a second phosphor, wherein the UV LED chip generates a first radiation; the first phosphor is composed of Zn(C3N2H4)2 powder and is excited by the first radiation to generate a second radiation; and the second phosphor is excited by the first radiation and/or the second radiation to generate a third radiation. The third radiation is then mixed with the first radiation and/or the second radiation to generate a white light.
摘要翻译：提供了一种白光发射装置及其制备方法。白光发射装置包括紫外（UV）发光二极管（LED）芯片，第一荧光体和第二荧光体，其中UV LED芯片产生第一辐射; 第一荧光体由Zn（C 3 N 2 H 4）2粉末组成，并被第一辐射激发以产生第二辐射; 并且第二荧光体被第一辐射和/或第二辐射激发以产生第三辐射。然后将第三辐射与第一辐射和/或第二辐射混合以产生白光。

4. 发明申请

US20130045655A1 White-Light Emitting Device And Preparation Method And Application Of The Same 有权
标题翻译：白光发射装置及其制备方法及应用
公开(公告)号：US20130045655A1
公开(公告)日：2013-02-21
申请号：US13651069
申请日：2012-10-12
申请人： Yi-Jung Chen , Chih-Chieh Yang , Chin-Chang Shen , Ru-Shi Liu
发明人： Yi-Jung Chen , Chih-Chieh Yang , Chin-Chang Shen , Ru-Shi Liu
IPC分类号： H05B33/10
CPC分类号： C09K11/06 , C09K11/7733 , C09K11/7734 , C09K2211/1044 , C09K2211/188 , H01L33/502 , H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H05B33/14 , Y02B20/181 , H01L2924/00014
摘要： A white-light emitting device and its preparation method are provided. The white-light emitting device comprises an ultraviolet (UV) light emitting diode (LED) chip, a first phosphor, and a second phosphor, wherein the UV LED chip generates a first radiation; the first phosphor is composed of Zn(C3N2H4)2 powder and is excited by the first radiation to generate a second radiation; and the second phosphor is excited by the first radiation and/or the second radiation to generate a third radiation. The third radiation is then mixed with the first radiation and/or the second radiation to generate a white light.
摘要翻译：提供了一种白光发射装置及其制备方法。白光发射装置包括紫外（UV）发光二极管（LED）芯片，第一荧光体和第二荧光体，其中UV LED芯片产生第一辐射; 第一荧光体由Zn（C 3 N 2 H 4）2粉末组成，并被第一辐射激发以产生第二辐射; 并且第二荧光体被第一辐射和/或第二辐射激发以产生第三辐射。然后将第三辐射与第一辐射和/或第二辐射混合以产生白光。

5. 发明授权

US07457062B1 Driving apparatus for fine-tuning focus 失效
标题翻译：用于微调焦点的驱动装置
公开(公告)号：US07457062B1
公开(公告)日：2008-11-25
申请号：US12106268
申请日：2008-04-19
申请人： Tsung-Kai Chang , Wen-Sheng Tai , Chin-Sung Liu , Yi-Jung Chen
发明人： Tsung-Kai Chang , Wen-Sheng Tai , Chin-Sung Liu , Yi-Jung Chen
IPC分类号： G02B7/02
CPC分类号： G02B7/022 , G02B7/102
摘要： A driving apparatus for fine-tuning focus is provided, including a movable structure suspended inside an outer holder by a suspension set. The suspension set is connected to the movable structure and the outer holder respectively so that the movable structure is suspended inside the outer holder, and can move inside the outer holder. With a magnet force generated by the interaction of the magnetic field of said first magnet set and said second magnet set of said outer holder, and the electrical current in said first coils and said second coils of said movable structure, the magnet force is able to drive the movable structure upward and downward to adjust the focus.
摘要翻译：提供一种用于微调焦点的驱动装置，包括通过悬挂装置悬挂在外保持器内的可移动结构。悬挂组件分别连接到可移动结构和外部保持件，使得可移动结构悬挂在外部保持器内部并且可以在外部保持器内移动。利用由所述第一磁体组的磁场和所述外部保持器的所述第二磁体组的相互作用产生的磁力以及所述第一线圈和所述可移动结构的所述第二线圈中的电流，所述磁力能够向上和向下驱动可移动结构以调整焦点。

6. 发明申请

US20080278831A1 Focus Driving Apparatus With Impact Resistance 失效
标题翻译：具有抗冲击性的聚焦驱动装置
公开(公告)号：US20080278831A1
公开(公告)日：2008-11-13
申请号：US11866260
申请日：2007-10-02
申请人： Tsung-Kai Chang , Yi-Jung Chen , Chin-Sung Liu
发明人： Tsung-Kai Chang , Yi-Jung Chen , Chin-Sung Liu
IPC分类号： G02B7/02
CPC分类号： G02B7/04 , G02B7/026
摘要： A focus driving apparatus with impact resistance is provided, including a lens carrier seat, a fixed base, a hanging element set, and a shake-resistant element set. The lens carrier seat is for carrying a lens. The hanging element set further includes a plurality of metal wires. The shake-resistant element set includes at least a soft resilient plate. One end of the metal wires of hanging element set is fixed to the lens carrier seat, and the other end penetrates the holes on the soft and resilient plate on the fixed base and is fixed to the shake-resistant element set. The shake-resistant element set can absorb the external impact force by deformation to provide protection to the hanging element set and lens carrier seat.
摘要翻译：提供了具有抗冲击性的聚焦驱动装置，包括透镜座椅，固定座，悬挂元件组和抗震元件组。透镜座椅用于承载镜头。悬挂元件组还包括多个金属线。抗震元件组至少包括软弹性板。悬挂元件组的金属线的一端固定在透镜支架座上，另一端穿过固定底座上的软弹性板上的孔，并固定在抗震元件组上。抗震元件组可以通过变形吸收外部冲击力，为悬挂元件组和透镜座椅座提供保护。

7. 发明授权

US07492537B2 Focus driving apparatus with impact resistance 失效
标题翻译：具有耐冲击性的聚焦驱动装置
公开(公告)号：US07492537B2
公开(公告)日：2009-02-17
申请号：US11866260
申请日：2007-10-02
申请人： Tsung-Kai Chang , Yi-Jung Chen , Chin-Sung Liu
发明人： Tsung-Kai Chang , Yi-Jung Chen , Chin-Sung Liu
IPC分类号： G02C7/02
CPC分类号： G02B7/04 , G02B7/026
摘要： A focus driving apparatus with impact resistance is provided, including a lens carrier seat, a fixed base, a hanging element set, and a shake-resistant element set. The lens carrier seat is for carrying a lens. The hanging element set further includes a plurality of metal wires. The shake-resistant element set includes at least a soft resilient plate. One end of the metal wires of hanging element set is fixed to the lens carrier seat, and the other end penetrates the holes on the soft and resilient plate on the fixed base and is fixed to the shake-resistant element set. The shake-resistant element set can absorb the external impact force by deformation to provide protection to the hanging element set and lens carrier seat.
摘要翻译：提供了具有抗冲击性的聚焦驱动装置，包括透镜座椅，固定座，悬挂元件组和抗震元件组。透镜座椅用于承载镜头。悬挂元件组还包括多个金属线。抗震元件组至少包括柔性弹性板。悬挂元件组的金属线的一端固定在透镜支架座上，另一端穿过固定底座上的软弹性板上的孔，并固定在抗震元件组上。抗震元件组可以通过变形吸收外部冲击力，为悬挂元件组和透镜座椅座提供保护。

8. 发明申请

US20060094178A1 Method of fabricating MOS transistor by millisecond anneal 有权
标题翻译：通过毫秒退火制造MOS晶体管的方法
公开(公告)号：US20060094178A1
公开(公告)日：2006-05-04
申请号：US11174750
申请日：2005-07-05
申请人： Shian-Jyh Lin , Sheng-Tsung Chen , Neng-Tai Shih , Chien-Chang Huang , Chien-Jung Yang , Yi-Jung Chen
发明人： Shian-Jyh Lin , Sheng-Tsung Chen , Neng-Tai Shih , Chien-Chang Huang , Chien-Jung Yang , Yi-Jung Chen
IPC分类号： H01L21/8234
CPC分类号： H01L29/6659 , H01L21/324 , H01L29/7833
摘要： A method of fabricating a MOS transistor by millisecond annealing. A semiconductor substrate with a gate stack comprising a gate electrode overlying a gate dielectric layer on a top surface of a semiconductor substrate is provided. At least one implanting process is performed to form two doped regions on opposite sides of the gate electrode. Millisecond annealing activates dopants in the doped regions. The millisecond anneal includes rapid heating and rapid cooling within 1 to 50 milliseconds.
摘要翻译：一种通过毫秒退火制造MOS晶体管的方法。提供了具有栅叠层的半导体衬底，其包括覆盖半导体衬底的顶表面上的栅介质层的栅电极。执行至少一个注入工艺以在栅电极的相对侧上形成两个掺杂区域。毫秒退火激活掺杂区中的掺杂剂。毫秒退火包括快速加热和1至50毫秒内的快速冷却。

9. 发明申请

US20100051578A1 METHOD FOR FABRICATING AN INTEGRATED CIRCUIT 审中-公开
标题翻译：制造集成电路的方法
公开(公告)号：US20100051578A1
公开(公告)日：2010-03-04
申请号：US12365161
申请日：2009-02-03
申请人： Shuo-Che Chang , Yi-Jung Chen
发明人： Shuo-Che Chang , Yi-Jung Chen
IPC分类号： B44C1/22
CPC分类号： H01L21/7682 , H01L21/31053
摘要： A method for fabricating an integrated circuit includes providing a substrate having thereon a material layer; forming trenches in the material layer; forming damascened wires in the trenches; covering the damascened wires and the material layer with a cap layer; forming a through hole in the cap layer that exposes a portion of the material layer; and removing the material layer thereby forming an air gap between the damascened wires.
摘要翻译：一种用于制造集成电路的方法包括提供其上具有材料层的基板; 在材料层中形成沟槽; 在沟槽中形成镶嵌的电线; 用盖层覆盖镶嵌的导线和材料层; 在所述盖层中形成暴露所述材料层的一部分的通孔; 并且去除材料层，从而在所述镶嵌的导线之间形成气隙。

10. 发明授权

US07160804B2 Method of fabricating MOS transistor by millisecond anneal 有权
标题翻译：通过毫秒退火制造MOS晶体管的方法
公开(公告)号：US07160804B2
公开(公告)日：2007-01-09
申请号：US11174750
申请日：2005-07-05
申请人： Shian-Jyh Lin , Sheng-Tsung Chen , Neng-Tai Shih , Chien-Chang Huang , Chien-Jung Yang , Yi-Jung Chen
发明人： Shian-Jyh Lin , Sheng-Tsung Chen , Neng-Tai Shih , Chien-Chang Huang , Chien-Jung Yang , Yi-Jung Chen
IPC分类号： H01L21/4763
CPC分类号： H01L29/6659 , H01L21/324 , H01L29/7833
摘要： A method of fabricating a MOS transistor by millisecond annealing. A semiconductor substrate with a gate stack comprising a gate electrode overlying a gate dielectric layer on a top surface of a semiconductor substrate is provided. At least one implanting process is performed to form two doped regions on opposite sides of the gate electrode. Millisecond annealing activates dopants in the doped regions. The millisecond anneal includes rapid heating and rapid cooling within 1 to 50 milliseconds.
摘要翻译：一种通过毫秒退火制造MOS晶体管的方法。提供了具有栅叠层的半导体衬底，其包括覆盖半导体衬底的顶表面上的栅介质层的栅电极。执行至少一个注入工艺以在栅电极的相对侧上形成两个掺杂区域。毫秒退火激活掺杂区中的掺杂剂。毫秒退火包括快速加热和1至50毫秒内的快速冷却。

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