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1. 发明申请

US20140273387A1 Method Of Making High-Voltage MOS Transistors With Thin Poly Gate 审中-公开
标题翻译：制造具有薄多孔栅极的高压MOS晶体管的方法
公开(公告)号：US20140273387A1
公开(公告)日：2014-09-18
申请号：US13839533
申请日：2013-03-15
申请人： Chien-Sheng Su , Jeng-Wei Yang , Mandana Tadayoni , Yueh-Hsin Chen
发明人： Chien-Sheng Su , Jeng-Wei Yang , Mandana Tadayoni , Yueh-Hsin Chen
IPC分类号： H01L29/66
CPC分类号： H01L29/66477 , H01L29/66545 , H01L29/6659
摘要： A method of forming an MOS transistor by forming a poly gate over and insulated from a substrate, forming a layer of protective insulation material on the poly gate, and then performing a first implant of dopant material into portions of the substrate adjacent the poly gate, wherein the layer of protective insulation material and the poly gate block most or all of the first implant from reaching a portion of the substrate underneath the poly gate. One or more spacers are then formed adjacent the poly gate, followed by a second implant of dopant material into portions of the substrate adjacent to the one or more spacers.
摘要翻译：一种形成MOS晶体管的方法，该方法是在多晶硅栅极上形成保护绝缘材料层，然后在邻近多晶硅栅极的基板的第一部分中进行第一次掺杂，其中所述保护绝缘材料层和所述多晶硅栅极阻挡所述第一注入的大部分或全部到达所述多晶硅栅极下方的所述衬底的一部分。然后在多晶硅栅极附近形成一个或多个间隔物，随后将掺杂剂材料第二次注入到与该一个或多个间隔物相邻的衬底的部分中。

2. 发明授权

US07358559B2 Bi-directional read/program non-volatile floating gate memory array, and method of formation 有权
标题翻译：双向读/写非挥发性浮栅存储器阵列及其形成方法
公开(公告)号：US07358559B2
公开(公告)日：2008-04-15
申请号：US11239791
申请日：2005-09-29
申请人： Felix (Ying-Kit) Tsui , Jeng-Wei Yang , Bomy Chen , Chun-Ming Chen , Dana Lee , Changyuan Chen
发明人： Felix (Ying-Kit) Tsui , Jeng-Wei Yang , Bomy Chen , Chun-Ming Chen , Dana Lee , Changyuan Chen
IPC分类号： H01L29/788
CPC分类号： H01L29/7887 , H01L27/115 , H01L27/11521 , H01L29/42328 , H01L29/42336
摘要： A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate. An array of such memory cells comprises rows of cells in active regions adjacent to one another separated from one another by the semiconductive substrate material without any isolation material. Cells in the same column have the source/drain region in common, the drain/source region in common and a first and second control gates in each of the trenches in common. Cells in adjacent columns have the source/drain in common and the first control gate in common.
摘要翻译：双向读/写非易失性存储单元和阵列能够实现高密度。每个存储单元具有两个间隔开的浮动栅极，用于在其上存储电荷。电池具有间隔开的源极/漏极区域，其间具有沟道，沟道具有三个部分。浮动门之一在第一部分之上; 另一个浮栅位于第二部分之上，栅电极控制第一和第二部分之间的第三部分中的沟道的导通。控制栅极连接到每个源极/漏极区域，并且还电容耦合到浮动栅极。通过热通道电子注入的电池程序，并通过Fowler-Nordheim将电子从浮动栅极隧穿到栅电极而擦除。双向读取允许将单元编程为存储位，每个浮动栅极中有一位。这种存储单元的阵列包括彼此相邻的活性区域中的细胞排，所述活性区域通过没有任何隔离材料的半导体衬底材料彼此分开。相同列中的单元具有共同的源极/漏极区域，共同的漏极/源极区域以及每个沟槽中的第一和第二控制栅极共同。相邻列中的单元具有共同的源极/漏极，第一个控制栅极共同。

3. 发明申请

US20070069275A1 Bi-directional read/program non-volatile floating gate memory array, and method of formation 有权
标题翻译：双向读/写非挥发性浮栅存储器阵列及其形成方法
公开(公告)号：US20070069275A1
公开(公告)日：2007-03-29
申请号：US11239791
申请日：2005-09-29
申请人： Felix Tsui , Jeng-Wei Yang , Bomy Chen , Chun-Ming Chen , Dana Lee , Changyuan Chen
发明人： Felix Tsui , Jeng-Wei Yang , Bomy Chen , Chun-Ming Chen , Dana Lee , Changyuan Chen
IPC分类号： H01L29/76
CPC分类号： H01L29/7887 , H01L27/115 , H01L27/11521 , H01L29/42328 , H01L29/42336
摘要： A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate. An array of such memory cells comprises rows of cells in active regions adjacent to one another separated from one another by the semiconductive substrate material without any isolation material. Cells in the same column have the source/drain region in common, the drain/source region in common and a first and second control gates in each of the trenches in common. Cells in adjacent columns have the source/drain in common and the first control gate in common.
摘要翻译：双向读/写非易失性存储单元和阵列能够实现高密度。每个存储单元具有两个间隔开的浮动栅极，用于在其上存储电荷。电池具有间隔开的源极/漏极区域，其间具有沟道，沟道具有三个部分。浮动门之一在第一部分之上; 另一个浮栅位于第二部分之上，栅电极控制第一和第二部分之间的第三部分中的沟道的导通。控制栅极连接到每个源极/漏极区域，并且还电容耦合到浮动栅极。通过热通道电子注入的电池程序，并通过Fowler-Nordheim将电子从浮动栅极隧穿到栅电极而擦除。双向读取允许将单元编程为存储位，每个浮动栅极中有一位。这种存储单元的阵列包括彼此相邻的活性区域中的细胞排，所述活性区域通过没有任何隔离材料的半导体衬底材料彼此分开。相同列中的单元具有共同的源极/漏极区域，共同的漏极/源极区域以及每个沟槽中的第一和第二控制栅极共同。相邻列中的单元具有共同的源极/漏极，第一个控制栅极共同。

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