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1. 发明授权

US4892592A Thin film semiconductor solar cell array and method of making 失效
标题翻译：薄膜半导体太阳能电池阵列及其制造方法
公开(公告)号：US4892592A
公开(公告)日：1990-01-09
申请号：US270443
申请日：1988-11-08
申请人： Charles R. Dickson , Barry J. Johnson , David B. Gerhardt
发明人： Charles R. Dickson , Barry J. Johnson , David B. Gerhardt
IPC分类号： H01L27/142
CPC分类号： B23K26/364 , B23K26/40 , H01L31/0463 , B23K2203/172 , Y02E10/50 , Y10S438/94
摘要： A method of forming laser-patterned conductive elements on a thin film of semiconductor material in a semiconductor device by fabricating a thin film of metal on the semiconductor material and scribing the semiconductor film along a desired pattern with a laser operated at a power density sufficient to ablate the semiconductor material along the desired pattern. The ablation of the semiconductor material produces gases that structurally weaken and burst through the metal film along the desired pattern to form gaps separating the metal film into a plurality of conductive elements, for example, back electrodes on a thin-film photovoltaic module. In a second embodiment, a method of forming a multi-cell thin-film semiconductor device with laser-patterned back electrodes includes the steps of fabricating a plurality of spaced-apart front electrodes on a substrate, fabricating a thin film of semiconductor material on the front electrodes, fabricating a thin film of metal on the semiconductor film, and scribing the metal film along a pattern of lines with a laser operated at a power density sufficient to melt the metal through the underlying semiconductor film and form electrical connections between the metal film and the front electrodes along the scribe lines. Multi-cell, thin-film amorphous silicon photovoltaic modules having back electrodes formed by the above methods also are disclosed.
摘要翻译：一种在半导体器件的半导体材料薄膜上形成激光图案化的导电元件的方法，该方法是通过在半导体材料上制造金属薄膜并沿着期望的图案划线半导体膜，并以足够的功率密度沿所需图案烧蚀半导体材料。半导体材料的烧蚀产生气体，其沿着所需图案结构地削弱并突破金属膜，以形成将金属膜分离成多个导电元件的间隙，例如薄膜光伏模块上的背电极。在第二实施例中，形成具有激光图案的背电极的多单元薄膜半导体器件的方法包括以下步骤：在衬底上制造多个间隔开的前电极，在其上制造半导体材料薄膜前电极，在半导体膜上制造金属薄膜，并且沿着线图案划线金属膜，其中激光以足以使金属通过下面的半导体膜熔化的功率密度进行操作，并形成金属膜之间的电连接和沿着划痕线的前电极。还公开了具有通过上述方法形成的背面电极的多单元，薄膜非晶硅光伏模块。

2. 发明授权

US4854974A Electrical contacts for a thin-film semiconductor device 失效
标题翻译：用于薄膜半导体器件的电触头
公开(公告)号：US4854974A
公开(公告)日：1989-08-08
申请号：US197433
申请日：1988-05-23
申请人： David E. Carlson , Charles R. Dickson , Robert V. D'Aiello
发明人： David E. Carlson , Charles R. Dickson , Robert V. D'Aiello
IPC分类号： H01L27/142
CPC分类号： H01L31/046 , B23K26/364 , B23K26/40 , H01L31/0463 , B23K2203/172 , Y02E10/50
摘要： A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.
摘要翻译：一种在半导体材料薄膜上制造间隔开的背接触的方法，该方法是通过在半导体材料的顶部上形成缓冲材料条，在相应于后触点之间的所需分隔线的位置上形成基本上覆盖半导体材料的金属膜和缓冲条，以及用激光覆盖在缓冲条上的金属膜的划线部分，而不与下面的半导体材料接触，以将金属层分离成多个后接触。缓冲材料用于保护底层半导体材料在激光划线期间不被损坏。还公开了包括这种背接触的背接触和多单元光伏模块。

3. 发明授权

US5021221A Apparatus for producing high purity silicon from flames of sodium and silicon tetrachloride 失效
标题翻译：用于从钠和四氯化硅的火焰中生产高纯度硅的装置
公开(公告)号：US5021221A
公开(公告)日：1991-06-04
申请号：US938049
申请日：1986-12-04
申请人： Robert K. Gould , Charles R. Dickson
发明人： Robert K. Gould , Charles R. Dickson
IPC分类号： B01J12/00 , B01J19/26 , C01B33/033 , C30B11/12
CPC分类号： C30B11/12 , B01J12/005 , B01J19/26 , C01B33/033 , B01J2219/00058 , B01J2219/00132 , B01J2219/00153 , B01J2219/00159
摘要： Vaporized silicon halide is mixed with a vaporized alkali metala in a reactor chamber in an exothermic reaction producing liquid silicon droplets and gaseous alkali metal halide, and then passed out of the reactor chamber through a nozzle in a supersonic jet. The supersonic jet is produced by utilizing vacuum means to maintain the exit chamber at a lower pressure than the reactor chamber. Separation of the silicon from the salt by-products is performed by shock wave impaction separation technique wherein the products of the complete reaction between the alkali metal and silicon halide are made to impinge upon an unrestricted, flat surface so that the direction of flow of the gas changes abruptly and a shock zone is created above the flat surface. The silicon droplets are carried by their large forward momentum through the shock zone onto the separating surface where they are deposited. The gaseous alkali metal halide flows across the surface and is thus separated from the silicon product. The silicon droplets are removed in a variety of physical configurations to produce silicon in pellet form, sheet form, ingot form, or single crystal silicon.
摘要翻译：将蒸发的卤化硅与反应室中的汽化碱金属在放热反应中混合，产生液体硅液滴和气态碱金属卤化物，然后通过超声波喷嘴的喷嘴从反应室中排出。通过利用真空装置将出口室保持在比反应器室低的压力下来产生超音速喷射。通过冲击波冲击分离技术进行硅与盐副产物的分离，其中将碱金属和卤化硅之间的完全反应的产物撞击在无限制的平坦表面上，使得流动方向气体突然变化，并且在平坦表面上方产生冲击区域。硅液滴通过其较大的向前动量通过冲击区承载在其沉积的分离表面上。气态碱金属卤化物流过表面，因此与硅产物分离。以各种物理构型去除硅液滴，以产生粒状，片状，锭状或单晶硅的硅。

4. 发明授权

US4910153A Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices 失效
标题翻译：用于制造用于光伏器件和其他半导体器件的氢化非晶硅合金的沉积原料和掺杂剂材料
公开(公告)号：US4910153A
公开(公告)日：1990-03-20
申请号：US315172
申请日：1989-02-24
申请人： Charles R. Dickson
发明人： Charles R. Dickson
IPC分类号： H01L31/20
CPC分类号： H01L31/202 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： Compounds having the formula (MX.sub.3).sub.n M'X.sub.4-n wherein M and M' are different Group 4A atoms, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.Dopants having the formula (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorous, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.Dopants having the formula YJX.sub.2 wherein Y is halogen or carbonyl, J is a Group 3A atom and X is hydrogen, halogen or mixtures thereof, are useful in the formation of positively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.
摘要翻译：具有式（MX3）n M'X4-n的化合物，其中M和M'不同于4A族原子，M和M'中的至少一个为硅，X为氢，卤素或其混合物，n为包括1和4在用于制造光伏和其它电子有源器件的氢化非晶硅合金的形成中可用作沉积原料。具有式（SiX 3）m L X3-m的掺杂剂，其中L是选自磷，砷，锑和铋的5A族原子，X是氢，卤素或其混合物，m是1和3之间的整数，包括在内，可用于制造用于制造光伏和其它电子有源器件的负掺杂氢化非晶硅合金。具有式YJX2的掺杂剂，其中Y是卤素或羰基，J是3A族原子，X是氢，卤素或其混合物，可用于形成用于制造光伏和其他电子的正掺杂氢化非晶硅合金有源设备。

5. 发明授权

US4783421A Method for manufacturing electrical contacts for a thin-film semiconductor device 失效
标题翻译：一种用于制造薄膜半导体器件的电触点的方法
公开(公告)号：US4783421A
公开(公告)日：1988-11-08
申请号：US68753
申请日：1987-06-29
申请人： David E. Carlson , Charles R. Dickson , Robert V. D'Aiello
发明人： David E. Carlson , Charles R. Dickson , Robert V. D'Aiello
IPC分类号： H01L27/142 , H01L31/18
CPC分类号： H01L31/046 , H01L31/0463 , Y02E10/50 , Y10S438/94
摘要： A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.
摘要翻译：一种在半导体材料薄膜上制造间隔开的背接触的方法，该方法是通过在半导体材料的顶部上形成缓冲材料条，在相应于后触点之间的所需分隔线的位置上形成基本上覆盖半导体材料的金属膜和缓冲条，以及用激光覆盖在缓冲条上的金属膜的划线部分，而不与下面的半导体材料接触，以将金属层分离成多个后接触。缓冲材料用于保护底层半导体材料在激光划线期间不被损坏。还公开了包括这种背接触的背接触和多单元光伏模块。

6. 发明授权

US4690830A Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices 失效
标题翻译：用于制造用于光伏器件和其他半导体器件的氢化非晶硅合金的沉积原料和掺杂剂材料的脱氢或脱卤化活化
公开(公告)号：US4690830A
公开(公告)日：1987-09-01
申请号：US830072
申请日：1986-02-18
申请人： Charles R. Dickson , David E. Carlson
发明人： Charles R. Dickson , David E. Carlson
IPC分类号： H01L21/205 , H01L29/16 , H01L31/075 , H01L31/20 , B05D3/06
CPC分类号： H01L31/075 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/1604 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： Compounds having the formula (MX.sub.3).sub.n M'X.sub.4-n wherein M and M' are different Group 4A atoms, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.Dopants having the formula (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.Dopants having the formula YJX.sub.2 wherein Y is halogen or carbonyl, J is a Group 3A atom and X is hydrogen, halogen or mixtures thereof, can be activated by dehydrogenation or dehalogenation. These compounds are useful in the formation of positively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.
摘要翻译：具有式（MX3）n M'X4-n的化合物，其中M和M'不同于4A族原子，M和M'中的至少一个为硅，X为氢，卤素或其混合物，n为 1和4（包括端值）可以通过脱氢或脱卤激活。这些化合物可用作形成用于制造光伏和其它电子有源器件的氢化非晶硅合金中的沉积原料。具有式（SiX 3）m L X3-m的掺杂剂，其中L是选自磷，砷，锑和铋的5A族原子，X是氢，卤素或其混合物，m是1和3之间的整数，包括，可以通过脱氢或脱卤激活。这些化合物可用于制造用于制造光伏和其它电子有源器件的负掺杂氢化非晶硅合金。具有式YJX2的掺杂剂，其中Y是卤素或羰基，J是3A族原子，X是氢，卤素或其混合物，可以通过脱氢或脱卤化来活化。这些化合物可用于形成用于制造光伏和其它电子有源器件的正掺杂氢化非晶硅合金。

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