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1. 发明申请

US20110130007A1 IN-SITU CLEAN TO REDUCE METAL RESIDUES AFTER ETCHING TITANIUM NITRIDE 审中-公开
标题翻译：在硝基硝酸盐蚀刻后的现场清洁减少金属残留
公开(公告)号：US20110130007A1
公开(公告)日：2011-06-02
申请号：US12884609
申请日：2010-09-17
申请人： CHI-HONG CHING , CHANG-LIN HSIEH , JIE ZHOU
发明人： CHI-HONG CHING , CHANG-LIN HSIEH , JIE ZHOU
IPC分类号： H01L21/467
CPC分类号： H01L21/32136 , H01J37/32862 , H01L21/02071 , H01L21/31144
摘要： Methods of processing substrates having titanium nitride layers are provided. In some embodiments, a method for processing a substrate having a dielectric layer to be etched, a titanium nitride layer above the dielectric layer, and a patterned photoresist layer above the titanium nitride layer, includes etching a pattern into the titanium nitride layer by exposing the titanium nitride layer to a first plasma comprising a chlorine containing gas to form a hard mask; removing titanium nitride etch residues disposed on one or more surfaces of the process chamber and/or substrate by forming a second plasma in the process chamber from a reactive gas comprising at least one of carbon monoxide or carbon dioxide; and etching the dielectric layer through the hard mask with a third plasma comprising a fluorocarbon gas.
摘要翻译：提供了处理具有氮化钛层的衬底的方法。在一些实施例中，一种用于处理具有要蚀刻的介电层，在电介质层上方的氮化钛层和在氮化钛层上方的图案化的光致抗蚀剂层的衬底的方法包括通过将图案暴露于氮化钛层氮化钛层至含有含氯气体的第一等离子体，形成硬掩模; 通过在包括至少一种一氧化碳或二氧化碳的反应性气体中在所述处理室中形成第二等离子体来去除设置在所述处理室和/或衬底的一个或多个表面上的氮化钛蚀刻残留物; 并用包含碳氟化合物气体的第三等离子体通过硬掩模蚀刻电介质层。

2. 发明申请

US20100024840A1 CHAMBER PLASMA-CLEANING PROCESS SCHEME 审中-公开
标题翻译： CHAMBER等离子清洗方法
公开(公告)号：US20100024840A1
公开(公告)日：2010-02-04
申请号：US12181535
申请日：2008-07-29
申请人： CHANG-LIN HSIEH , Chi-Hong Ching , Hidehiro Kojiri , Joshua Tsui
发明人： CHANG-LIN HSIEH , Chi-Hong Ching , Hidehiro Kojiri , Joshua Tsui
IPC分类号： B08B6/00
CPC分类号： B08B7/0035 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： A method for plasma-cleaning a chamber in a process tool is described. A substrate is placed on a chuck in a process chamber having a set of contaminants therein. A plasma process is executed in the process chamber to transfer the set of contaminants to the top surface of the substrate. The substrate, having the set of contaminants thereon, is removed from the process chamber.
摘要翻译：描述了一种用于等离子体清洁处理工具中的室的方法。将基板放置在其中具有一组污染物的处理室中的卡盘上。在处理室中执行等离子体处理以将该组污染物转移到基板的顶表面。在其上具有一组污染物的衬底从处理室中移出。

3. 发明申请

US20090156012A1 METHOD FOR FABRICATING LOW K DIELECTRIC DUAL DAMASCENE STRUCTURES 审中-公开
标题翻译：制备低K电介质双组分结构的方法
公开(公告)号：US20090156012A1
公开(公告)日：2009-06-18
申请号：US11954550
申请日：2007-12-12
申请人： CHANG-LIN HSIEH , BINXI GU , JIE YUAN , HUI XIONG DAI , ROBIN CHEUNG , SUBHASH DESHMUKH
发明人： CHANG-LIN HSIEH , BINXI GU , JIE YUAN , HUI XIONG DAI , ROBIN CHEUNG , SUBHASH DESHMUKH
IPC分类号： H01L21/461
CPC分类号： H01L21/76808 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： Methods for forming dual damascene structures in low-k dielectric materials that facilitate reducing photoresist poison issues are provided herein. In some embodiments, such methods may include plasma etching a via through a first mask layer into a low-k dielectric material disposed on a substrate. The first mask layer may then be removed using a process including exposing the first mask layer to a first plasma comprising an oxygen containing gas and at least one of a dilutant gas or a passivation gas, and subsequently exposing the first mask layer to a second plasma comprising an oxygen containing gas and formed using one of either plasma bias power or plasma source power. An anti-reflective coating may then be deposited into the via and atop the low-k dielectric material. A trench may then be plasma etched through a second mask layer formed atop the anti-reflective coating into the low-k dielectric material.
摘要翻译：本文提供了在低k电介质材料中形成双重镶嵌结构的方法，其有助于减少光致抗蚀剂的毒性问题。在一些实施例中，这样的方法可以包括将通过第一掩模层的通孔等离子体蚀刻到设置在基板上的低k电介质材料。然后可以使用包括将第一掩模层暴露于包含含氧气体和稀释气体或钝化气体中的至少一种的第一等离子体的方法去除第一掩模层，并随后将第一掩模层暴露于第二等离子体包括含氧气体并且使用等离子体偏置功率或等离子体源功率之一来形成。然后可以将抗反射涂层沉积到低k电介质材料的通孔中。然后可以通过在抗反射涂层顶部形成低k电介质材料的第二掩模层等离子体蚀刻沟槽。

4. 发明申请

US20080237183A1 METHOD OF ETCHING AN ORGANIC LOW-K DIELECTRIC MATERIAL 失效
标题翻译：蚀刻有机低K电介质材料的方法
公开(公告)号：US20080237183A1
公开(公告)日：2008-10-02
申请号：US11691930
申请日：2007-03-27
申请人： CHANG-LIN HSIEH , Binxi Gu
发明人： CHANG-LIN HSIEH , Binxi Gu
IPC分类号： C23F1/00
CPC分类号： H01L21/31138 , H01L21/6708
摘要： A method of etching organic low-k dielectric materials is provided herein. In one embodiment, a method of etching organic low-k dielectric materials includes placing a substrate comprising an exposed organic low-k dielectric material in an etch reactor; supplying a process gas comprising an oxygen-containing gas, a nitrogen-containing gas, and methane (CH4); and forming a plasma from the process gas to etch the organic low-k dielectric material. The organic low-k dielectric material may include polymer-based low-k dielectric materials, photoresists, or organic polymers. The oxygen-containing gas may be oxygen (O2) and the nitrogen-containing gas may be nitrogen (N2).
摘要翻译：本文提供了一种蚀刻有机低k电介质材料的方法。在一个实施例中，蚀刻有机低k电介质材料的方法包括将包含暴露的有机低k电介质材料的衬底放置在蚀刻反应器中; 提供包含含氧气体，含氮气体和甲烷（CH 4 SO 4）的工艺气体; 以及从所述工艺气体形成等离子体以蚀刻所述有机低k电介质材料。有机低k介电材料可以包括基于聚合物的低k介电材料，光致抗蚀剂或有机聚合物。含氧气体可以是氧（O 2/2），含氮气体可以是氮气（N 2 O 2）。

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