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1. 发明申请

US20110056514A1 WORKPIECE DE-CHUCKING DEVICE OF PLASMA REACTOR FOR DRY-CLEANING INSIDE OF REACTION CHAMBER AND ELECTROSTATIC CHUCK DURING WORKPIECE DE-CHUCKING, AND WORKPIECE DE-CHUCKING METHOD USING THE SAME 有权
标题翻译：用于在工作停止期间的反应室内的干燥清洁内部的等离子体反应器的工作装置和使用其的工作停止方法
公开(公告)号：US20110056514A1
公开(公告)日：2011-03-10
申请号：US12854545
申请日：2010-08-11
申请人： Byoungil LEE , Hyeokjin Jang , Sungyong Ko , Minshik Kim
发明人： Byoungil LEE , Hyeokjin Jang , Sungyong Ko , Minshik Kim
IPC分类号： B08B6/00 , C23F1/08
CPC分类号： H01L21/6831 , H01J37/321 , H01L21/68742
摘要： A workpiece de-chucking device of a plasma reactor for dry-cleaning the inside of a reaction chamber and an ElectroStatic chuck (ESC) during workpiece de-chucking and a workpiece de-chucking method using the same are provided. The workpiece de-chucking device includes a lifting unit, an ICP source power unit, and a controller. The lifting unit lifts a workpiece mounted on a top surface of an ESC. The ICP source power unit forms a magnetic field in an inductive coil arranged outside a dielectric window. The controller outputs a source power control signal, a lift control signal, and a de-chucking control signal.
摘要翻译：提供了一种用于在工件去夹紧期间干燥清洁反应室内部和静电卡盘（ESC）的等离子体反应器的工件脱扣装置和使用其的工件脱扣方法。工件脱扣装置包括提升单元，ICP源功率单元和控制器。提升单元提升安装在ESC顶部表面上的工件。 ICP源功率单元在布置在电介质窗外部的感应线圈中形成磁场。控制器输出源功率控制信号，升降控制信号和去夹紧控制信号。

2. 发明授权

US08398783B2 Workpiece de-chucking device of plasma reactor for dry-cleaning inside of reaction chamber and electrostatic chuck during workpiece de-chucking, and workpiece de-chucking method using the same 有权
标题翻译：用于在工件脱夹中的反应室和静电吸盘内部进行干洗的等离子体反应器的工件脱夹装置，以及使用其的工件脱扣方法
公开(公告)号：US08398783B2
公开(公告)日：2013-03-19
申请号：US12854545
申请日：2010-08-11
申请人： Byoungil Lee , Hyeokjin Jang , Sungyong Ko , Minshik Kim
发明人： Byoungil Lee , Hyeokjin Jang , Sungyong Ko , Minshik Kim
IPC分类号： B08B3/00
CPC分类号： H01L21/6831 , H01J37/321 , H01L21/68742
摘要： A workpiece de-chucking device of a plasma reactor for dry-cleaning the inside of a reaction chamber and an ElectroStatic chuck (ESC) during workpiece de-chucking and a workpiece de-chucking method using the same are provided. The workpiece de-chucking device includes a lifting unit, an ICP source power unit, and a controller. The lifting unit lifts a workpiece mounted on a top surface of an ESC. The ICP source power unit forms a magnetic field in an inductive coil arranged outside a dielectric window. The controller outputs a source power control signal, a lift control signal, and a de-chucking control signal.
摘要翻译：提供了一种用于在工件去夹紧期间干燥清洁反应室内部和静电卡盘（ESC）的等离子体反应器的工件脱扣装置和使用其的工件脱扣方法。工件脱扣装置包括提升单元，ICP源功率单元和控制器。提升单元提升安装在ESC顶部表面上的工件。 ICP源功率单元在布置在电介质窗外部的感应线圈中形成磁场。控制器输出源功率控制信号，升降控制信号和去夹紧控制信号。

3. 发明授权

US08323522B2 Plasma reactor and etching method using the same 有权
标题翻译：等离子体反应器和使用其的蚀刻方法
公开(公告)号：US08323522B2
公开(公告)日：2012-12-04
申请号：US12949139
申请日：2010-11-18
申请人： Hyeokjin Jang , Minshik Kim , Kwangmin Lee , Sungyong Ko , Hwankook Chae , Kunjoo Park , Keehyun Kim , Weonmook Lee
发明人： Hyeokjin Jang , Minshik Kim , Kwangmin Lee , Sungyong Ko , Hwankook Chae , Kunjoo Park , Keehyun Kim , Weonmook Lee
IPC分类号： G01L21/30 , B44C1/22
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32266
摘要： A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.
摘要翻译：提供等离子体反应器和使用其的蚀刻方法。该方法包括：改变连接到RF源电源单元的感应线圈的数量或排列结构的第一改变步骤，施加RF源功率并产生高密度等离子体的步骤;蚀刻第一蚀刻靶工件的层，停止施加RF源功率的第一停止步骤，改变感应线圈的数量或排列结构的第二改变步骤，向相应的感应线圈施加RF源功率并产生低密度等离子体的步骤，蚀刻工件的第二蚀刻靶层的第二蚀刻步骤以及停止施加RF源功率的第二停止步骤。

4. 发明授权

US08652296B2 Side gas injector for plasma reaction chamber 有权
标题翻译：用于等离子体反应室的侧气体喷射器
公开(公告)号：US08652296B2
公开(公告)日：2014-02-18
申请号：US12871109
申请日：2010-08-30
申请人： Minshik Kim , Sungyong Ko , Hwankook Chae , Kunjoo Park , Keehyun Kim , Weonmook Lee
发明人： Minshik Kim , Sungyong Ko , Hwankook Chae , Kunjoo Park , Keehyun Kim , Weonmook Lee
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A side gas injector for a plasma reaction chamber is provided. The side gas injector includes a circular distribution plate and a cover plate. The circular distribution plate includes an injection hole for injecting a reaction gas and a distribution channel part for distributing the reaction gas such that the reaction gas introduced from the injection hole can be radially simultaneously jetted in a plurality of positions along an inner circumference surface of the distribution plate. The cover plate is coupled to a top of the distribution plate and seals a top of the distribution channel part.
摘要翻译：提供了一种用于等离子体反应室的侧气体喷射器。侧气体喷射器包括圆形分配板和盖板。圆形分配板包括用于喷射反应气体的喷射孔和用于分配反应气体的分配通道部分，使得从喷射孔引入的反应气体可沿径向同时喷射在沿着内部圆周表面的多个位置配电盘。盖板联接到分配板的顶部并密封分配通道部分的顶部。

5. 发明申请

US20110079356A1 SIDE GAS INJECTOR FOR PLASMA REACTION CHAMBER 有权
标题翻译：等离子体反应室侧气体喷射器
公开(公告)号：US20110079356A1
公开(公告)日：2011-04-07
申请号：US12871109
申请日：2010-08-30
申请人： Minshik Kim , Sungyong Ko , Hwankook Chae , Kunjoo Park , Keehyun Kim , Weonmook Lee
发明人： Minshik Kim , Sungyong Ko , Hwankook Chae , Kunjoo Park , Keehyun Kim , Weonmook Lee
IPC分类号： C23F1/08
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A side gas injector for a plasma reaction chamber is provided. The side gas injector includes a circular distribution plate and a cover plate. The circular distribution plate includes an injection hole for injecting a reaction gas and a distribution channel part for distributing the reaction gas such that the reaction gas introduced from the injection hole can be radially simultaneously jetted in a plurality of positions along an inner circumference surface of the distribution plate. The cover plate is coupled to a top of the distribution plate and seals a top of the distribution channel part.
摘要翻译：提供了一种用于等离子体反应室的侧气体喷射器。侧气体喷射器包括圆形分配板和盖板。圆形分配板包括用于喷射反应气体的喷射孔和用于分配反应气体的分配通道部分，使得从喷射孔引入的反应气体可沿径向同时喷射在沿着内部圆周表面的多个位置配电盘。盖板联接到分配板的顶部并密封分配通道部分的顶部。

6. 发明授权

US08158068B2 Plasma reactor 有权
标题翻译：等离子体反应器
公开(公告)号：US08158068B2
公开(公告)日：2012-04-17
申请号：US12416658
申请日：2009-04-01
申请人： Kunjoo Park , Hwankook Chae , Sungyong Ko , Keehyun Kim , Weonmook Lee
发明人： Kunjoo Park , Hwankook Chae , Sungyong Ko , Keehyun Kim , Weonmook Lee
IPC分类号： B01J19/08
CPC分类号： H01J37/32633 , H01J37/32623
摘要： A plasma chemical reactor is provided. The reactor includes a chamber, a cathode assembly, and a baffle plate. The chamber forms a plasma reaction space. The cathode assembly includes a cathode support shaft and a substrate support. The cathode support shaft is coupled at one side to a wall surface of the chamber. The substrate support is coupled to the other side of the cathode support shaft and supports the substrate. The baffle plate is out inserted and coupled to the substrate support, and has a plurality of vents arranged to be spaced apart and through formed such that reaction gas can pass through, and the vents asymmetrically arranged and formed to get a vent area smaller at an opposite side than a top side of the cathode support shaft.
摘要翻译：提供等离子体化学反应器。反应器包括室，阴极组件和挡板。室形成等离子体反应空间。阴极组件包括阴极支撑轴和衬底支撑件。阴极支撑轴在一侧连接到腔室的壁表面。衬底支撑件耦合到阴极支撑轴的另一侧并支撑衬底。挡板被插入并联接到基板支撑件，并且具有多个通风口，其布置成间隔开并形成为使得反应气体可以通过，并且通风口不对称地布置和形成，以使排气面积在与阴极支撑轴的顶侧相对。

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