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1. 发明授权

US06169009A Methods of etching platinum group metal film and forming lower electrode of capacitor 有权
标题翻译：蚀刻铂族金属膜并形成电容器的下电极的方法
公开(公告)号：US06169009A
公开(公告)日：2001-01-02
申请号：US09203337
申请日：1998-12-02
申请人： Byong-sun Ju , Hyoun-woo Kim , Chang-jin Kang , Joo-tae Moon , Byeong-yun Nam
发明人： Byong-sun Ju , Hyoun-woo Kim , Chang-jin Kang , Joo-tae Moon , Byeong-yun Nam
IPC分类号： H01L2120
CPC分类号： C23F4/00 , H01L21/32136 , H01L28/60
摘要： A method of etching a platinum group metal film uses a gas mixture containing argon (Ar), oxygen (O2) and halogen gases and a method of forming a lower electrode of a capacitor uses the etching method. The gas mixture contains O2, Ar, and a third component, preferably a halogen, e.g., chlorine (Cl2) or hydrogen bromide (HBr). In the method of forming a lower electrode, a conductive film containing a metal belonging to a platinum (Pt) group is formed on a semiconductor substrate, a hard mask partially exposing the conductive film is then formed on the conductive film. Then, the exposed conductive film is dry-etched using the hard mask as an etching mask and a three-component gas mixture containing argon (Ar) and oxygen (O2), to form a conductive film pattern beneath the hard mask, and the hard mask is then removed.
摘要翻译：蚀刻铂族金属膜的方法使用包含氩（Ar），氧（O 2）和卤素气体的气体混合物，并且形成电容器的下电极的方法使用蚀刻方法。气体混合物含有O 2，Ar和第三组分，优选卤素，例如氯（Cl 2）或溴化氢（HBr）。在形成下电极的方法中，在半导体衬底上形成含有属于铂（Pt）基团的金属的导电膜，然后在导电膜上形成部分地暴露导电膜的硬掩模。然后，使用硬掩模作为蚀刻掩模和含有氩（Ar）和氧（O 2）的三组分气体混合物来干燥暴露的导电膜，以在硬掩模下形成导电膜图案，并且硬然后取下面具。

2. 发明授权

US06964839B1 Photosensitive polymer having cyclic backbone and resist composition containing the same 失效
标题翻译：具有环状骨架的光敏性聚合物和含有它们的抗蚀剂组合物
公开(公告)号：US06964839B1
公开(公告)日：2005-11-15
申请号：US09715041
申请日：2000-11-20
申请人： Sang-jun Choi , Hyun-woo Kim , Sang-gyun Woo , Joo-tae Moon
发明人： Sang-jun Choi , Hyun-woo Kim , Sang-gyun Woo , Joo-tae Moon
IPC分类号： C08F220/18 , C08F222/06 , C08K5/00 , C08L33/06 , C08L35/00 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A photosensitive copolymer has a weight-average molecular weight of 3,000 to 100,000 and is represented by the following formula: wherein R1 is a hydrogen atom or methyl, R2 is an acid-labile tertiary alkyl group, and m/(m+n) is 0.5 to 0.8.
摘要翻译：光敏共聚物的重均分子量为3,000〜100,000，由下式表示：其中R 1是氢原子或甲基，R 2是酸不稳定叔烷基，m /（m + n）为0.5〜0.8。

3. 发明授权

US06245482B1 Polymer and chemically amplified resist composition including silicon containing protecting group 失效
标题翻译：聚合物和化学放大抗蚀剂组合物，包括含硅保护基
公开(公告)号：US06245482B1
公开(公告)日：2001-06-12
申请号：US09511314
申请日：2000-02-23
申请人： Sang-jun Choi , Joo-tae Moon
发明人： Sang-jun Choi , Joo-tae Moon
IPC分类号： G03C172
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S206/806 , Y10S430/106 , Y10S430/111
摘要： There is provided a polymer for use in a chemically amplified resist and represented by the following formula: where R′ is one selected from the group consisting of: in which R1 is one selected from the group consisting of —H and —CH3, and m and n are integers, and where R2 is one selected from the group consisting of —H and —CH3, R3 is one selected from the group consisting of —H and —CH3, R4 is one selected from the group consisting of —H, —CH3 and —CH2CH2OH, p, q and r are integers, p/(p+q+r) is 0.1˜0.7, q/(p+q+r) is 0.1˜0.7, and r/(p+q+r) is 0.1˜0.5.
摘要翻译：提供一种用于化学增幅抗蚀剂的聚合物，由下式表示：其中R'为选自由以下组成的组中的一种：其中R 1选自-H和-CH 3，m为且n为整数，其中R 2为选自-H和-CH 3的一个，R 3为选自-H和-CH 3的一个，R 4选自-H，-CH 3 和-CH 2 CH 2 OH，p，q和r为整数，p /（p + q + r）为0.1〜0.7，q /（p + q + r）为0.1〜0.7，r /（p + q + r）为0.1〜0.5。

4. 发明授权

US06284438B1 Method for manufacturing a photoresist pattern defining a small opening and method for manufacturing semiconductor device using the same 失效
标题翻译：用于制造限定小开口的光致抗蚀剂图案的方法和使用其制造半导体器件的方法
公开(公告)号：US06284438B1
公开(公告)日：2001-09-04
申请号：US09420555
申请日：1999-10-19
申请人： Sang-jun Choi , Yool Kang , Si-hyeung Lee , Joo-tae Moon
发明人： Sang-jun Choi , Yool Kang , Si-hyeung Lee , Joo-tae Moon
IPC分类号： G03F726
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/039
摘要： A method for manufacturing a photoresist pattern that defines an opening having a small size, and a method for manufacturing a semiconductor device using the same are provided. A photoresist pattern defining the opening can be formed using a photoresist composition that includes either polymer mixture I containing a polymer A in which an acid-labile di-alkyl malonate group is pendant to the polymer backbone, and a polymer B in which a group that thermally decomposes at a temperature lower than the glass transition temperature of the polymer B itself is pendant to the polymer backbone, or polymer mixture II containing the polymer B and a polymer C including a (meth)acrylate as a monomer, as a main component. The size of the opening then can be reduced by thermal flowing the photoresist pattern. It is possible to form the photoresist pattern defining an opening having a small size since the photoresist composition comprises the polymer mixture which has advantageous characteristics, such as high contrast, and in which the flow rate of the composition upon thermal flowing can easily be controlled.
摘要翻译：提供了限定具有小尺寸的开口的光致抗蚀剂图案的制造方法以及使用其的半导体装置的制造方法。可以使用光致抗蚀剂组合物形成限定开口的光致抗蚀剂图案，该光致抗蚀剂组合物包括含有聚合物A的聚合物混合物I，其中酸不稳定的二烷基丙二酸酯基团悬挂于聚合物主链，聚合物B，在低于聚合物B本身的玻璃化转变温度的温度下热分解为聚合物主链，或含有聚合物B的聚合物混合物II和包含（甲基）丙烯酸酯作为单体的聚合物C作为主要成分。然后可以通过光致抗蚀剂图案的热流动来减小开口的尺寸。可以形成限定具有小尺寸的开口的光致抗蚀剂图案，因为光致抗蚀剂组合物包含聚合物混合物，其具有诸如高对比度的有利特征，并且其中组合物在热流动时的流速可以容易地被控制。

5. 发明申请

US20050026078A1 Resist compositions including thermal crosslinking agents 审中-公开
标题翻译：抗蚀剂组合物包括热交联剂
公开(公告)号：US20050026078A1
公开(公告)日：2005-02-03
申请号：US10924484
申请日：2004-08-24
申请人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
发明人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
IPC分类号： G03F7/004 , C08K5/00 , C08K5/06 , C08K5/14 , C08K5/16 , C08K5/23 , C08L61/04 , G03F7/022 , G03F7/039 , G03F7/40 , H01L21/027 , G03C1/76
CPC分类号： G03F7/40
摘要： A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
摘要翻译：一种在半导体衬底中形成精细图案的方法，其中通过用光刻工艺将包含至少一种能形成光致抗蚀剂图案的化合物的抗蚀剂组合物涂覆在半导体衬底上的待蚀刻靶材层和自由基引发剂。自由基引发剂能够在等于或高于至少一种化合物的玻璃化转变温度的温度下被热处理分解。在抗蚀剂化合物层上进行光刻工艺以形成光致抗蚀剂图案。将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中发生抗蚀剂组合物中的部分交联反应。

6. 发明授权

US06485895B1 Methods for forming line patterns in semiconductor substrates 失效
标题翻译：在半导体衬底中形成线图案的方法
公开(公告)号：US06485895B1
公开(公告)日：2002-11-26
申请号：US09533770
申请日：2000-03-23
申请人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
发明人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
IPC分类号： G03F740
CPC分类号： G03F7/40
摘要： A method for forming a fine pattern in a semiconductor substrate, comprises the steps of (a) coating a target layer to be etched on a semiconductor substrate with a resist composition comprising at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator, wherein the free radical initiator is one which is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound, wherein said coating step results in forming a resist compound layer comprising the resist composition; (b) performing a lithography process on the resist compound layer to form a photoresist pattern of at least one opening having a first width, wherein the target layer is exposed through the first width; and (c) heating the resist compound layer having the photoresist pattern formed therein to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs by the free radicals produced from the free radical initiator resulting in a modified photoresist pattern having at least one opening having a second width which exposes the target layer, wherein the second width is smaller than the first width.
摘要翻译：一种用于在半导体衬底中形成精细图案的方法，包括以下步骤：（a）用包含至少一种能够通过光刻工艺形成光致抗蚀剂图案的化合物的抗蚀剂组合物在半导体衬底上涂覆待蚀刻的靶层，和自由基引发剂，其中所述自由基引发剂是能够在等于或高于所述至少一种化合物的玻璃化转变温度的温度下通过热处理分解的引发剂，其中所述涂布步骤导致形成抗蚀剂化合物层，其包含抗蚀剂组合物; （b）对抗蚀剂化合物层进行光刻处理以形成具有第一宽度的至少一个开口的光致抗蚀剂图案，其中目标层通过第一宽度暴露; 和（c）将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中抗蚀剂组合物中的部分交联反应通过自由基由自由基引发剂产生的自由基导致具有至少一个具有暴露目标层的第二宽度的开口的改性光致抗蚀剂图案，其中第二宽度小于第一宽度。

7. 发明授权

US06803176B2 Methods for forming line patterns in semiconductor substrates 失效
标题翻译：在半导体衬底中形成线图案的方法
公开(公告)号：US06803176B2
公开(公告)日：2004-10-12
申请号：US10227067
申请日：2002-08-23
申请人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
发明人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
IPC分类号： G03F740
CPC分类号： G03F7/40
摘要： A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
摘要翻译：一种在半导体衬底中形成精细图案的方法，其中通过用光刻工艺将包含至少一种能形成光致抗蚀剂图案的化合物的抗蚀剂组合物涂覆在半导体衬底上的待蚀刻靶材层和自由基引发剂。自由基引发剂能够在等于或高于至少一种化合物的玻璃化转变温度的温度下被热处理分解。在抗蚀剂化合物层上进行光刻工艺以形成光致抗蚀剂图案。将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中发生抗蚀剂组合物中的部分交联反应。

8. 发明授权

US6051362A Silicon containing polymer and chemically amplified resist composition comprising the same 有权
标题翻译：含硅聚合物和包含其的化学增幅抗蚀剂组合物
公开(公告)号：US6051362A
公开(公告)日：2000-04-18
申请号：US251159
申请日：1999-02-17
申请人： Sang-jun Choi , Joo-tae Moon
发明人： Sang-jun Choi , Joo-tae Moon
IPC分类号： G03F7/039 , C08F210/02 , C08F210/06 , C08F220/12 , C08F226/08 , C08F230/08 , G03F7/004 , G03F7/075 , G03C1/72
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S206/806 , Y10S430/106 , Y10S430/111
摘要： A polymer for use in a chemically amplified photoresist and represented by the following formula: ##STR1## where R' is one selected from the group including: ##STR2## in which R.sub.1 is one selected from the group including --H and --CH.sub.3, m and n are integers, and m/(m+n)=0.1-0.6, and ##STR3##
摘要翻译：一种用于化学放大光致抗蚀剂并由下式表示的聚合物：其中R'为选自以下的基团：其中R 1为选自-H和-CH 3的基团，m和n为整数，和 m /（m + n）= 0.1-0.6，

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