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    • 3. 发明授权
    • Scratch-resistant flameproof thermoplastic resin composition
    • 防刮耐火热塑性树脂组合物
    • US07732515B2
    • 2010-06-08
    • US12250648
    • 2008-10-14
    • Bok Nam JangIn Chul JungJung Hwan YunJin Hwan Choi
    • Bok Nam JangIn Chul JungJung Hwan YunJin Hwan Choi
    • C08K5/523
    • C08L69/00C08K5/521C08K5/523C08L33/12C08L51/04C08L67/02C08L2201/02C08L2205/03C08L2666/02
    • Disclosed herein is a flame retardant thermoplastic resin composition that has superior scratch resistance and mechanical properties, satisfying requirements for the appearance of housing materials resulting from a recent increase in volume of electrical and electronic products, and that contains a phosphorus-based flame-retarding agent, satisfying requirements for fire safety and prevention of environmental problems. The resin composition with scratch resistance comprises a base resin comprising (A) about 30 to about 90 parts by weight of a polycarbonate resin, (B) about 15 to about 50 parts by weight of a polymethylmethacrylate resin and (C) about 5 to about 50 parts by weight of a polyethylene terephthalate-based resin, and (D) about 5 to about 30 parts by weight of a phosphorus-based flame-retarding agent based on 100 parts by weight of the base resin. The composition may further comprise about 1 to about 30 parts by weight of an impact modifier based on 100 parts by weight of the base resin.
    • 本发明公开了一种阻燃热塑性树脂组合物,其具有优异的耐擦伤性和机械性能,满足了近来电气和电子产品体积增加所引起的外壳材料外观的要求,并且含有磷系阻燃剂 满足消防安全要求,防范环境问题。 具有耐刮擦性的树脂组合物包括基础树脂,其包含(A)约30至约90重量份的聚碳酸酯树脂,(B)约15至约50重量份的聚甲基丙烯酸甲酯树脂和(C)约5至约 50重量份的聚对苯二甲酸乙二醇酯类树脂,(D)基于100重量份的基础树脂约5至约30重量份的磷系阻燃剂。 基于100重量份的基础树脂,组合物还可以包含约1至约30重量份的抗冲改性剂。
    • 7. 发明授权
    • Sensing current reduction device for semiconductor memory device and method therefor
    • 用于半导体存储器件的感应电流减小装置及其方法
    • US06185132B2
    • 2001-02-06
    • US09475017
    • 1999-12-30
    • In Chul Jung
    • In Chul Jung
    • G11C700
    • G11C7/22G11C11/4076G11C11/4097
    • The present invention relates to a sensing current reduction device for a semiconductor memory device, and a method therefor, which can considerably reduce a sensing current occupying a great part of an operating current and consume less power, by controlling a bit line sense amplifier to be operated after receiving a column address, and control a long-time operation not to be carried out after applying the row address. Accordingly, a time from latching a row address signal to receiving a column address signal is sharply decreased. As a result, an access time is reduced, thus achieving the high speed operation.
    • 本发明涉及一种用于半导体存储器件的感测电流降低装置及其方法,其可以通过将位线读出放大器控制为大大减小占据大部分工作电流并消耗更少功率的感测电流 在接收列地址后进行操作,并且在应用行地址之后控制不执行的长时间操作。 因此,从行地址信号锁存到接收列地址信号的时间急剧减少。 结果,访问时间减少,从而实现高速操作。
    • 10. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US6163497A
    • 2000-12-19
    • US321760
    • 1999-05-28
    • In Chul Jung
    • In Chul Jung
    • G11C11/41G11C8/00G11C8/06G11C8/10G11C16/06G11C29/00G11C29/04
    • G11C8/06G11C8/10G11C29/785
    • A predecoder of a semiconductor memory device which is capable of selectively inverting a signal output from a decoding unit adapted to decode internal addresses generated from address buffers, thereby achieving an improvement in the utility thereof. The predecoder includes a selection unit for selectively outputting one of the signals having different logic levels while being generated based on an output signal from the decoding unit. Where the predecoder is applied to a cell repair circuit using antifuses, it is possible to reduce the layout area of the cell repair circuit, thereby achieving a reduction in the chip size. This results in a reduction in the costs of the chip.
    • 半导体存储器件的预解码器能够选择性地反转从解码单元输出的信号,该解码单元适于解码从地址缓冲器产生的内部地址,从而实现其效用的改进。 预解码器包括:选择单元,用于在基于来自解码单元的输出信号生成时选择性地输出具有不同逻辑电平的信号之一。 在使用反熔丝将预解码器应用于细胞修复电路的情况下,可以减小细胞修复电路的布局面积,从而实现芯片尺寸的减小。 这导致芯片成本的降低。