专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06916728B2 Method for forming a semiconductor structure through epitaxial growth 有权
标题翻译：通过外延生长形成半导体结构的方法
公开(公告)号：US06916728B2
公开(公告)日：2005-07-12
申请号：US10328923
申请日：2002-12-23
申请人： Bishnu Gogoi , Raymond M. Roop
发明人： Bishnu Gogoi , Raymond M. Roop
IPC分类号： B81B3/00 , H01L21/20 , H01L21/22
CPC分类号： B81C1/00476 , B81B2201/025 , B81B2203/0307 , B81C2201/0109 , Y10S438/977
摘要： A method for creating a MEMS structure is provided. In accordance with the method, an article is provided which comprises a substrate (101) and a single crystal semiconductor layer (105), and having a sacrificial layer (103) comprising a first dielectric material which is disposed between the substrate and the semiconductor layer. An opening (107) is created which extends through the semiconductor layer (105) and the sacrificial layer (103) and which exposes a portion of the substrate (101). An anchor portion (109) comprising a second dielectric material is then formed in the opening (107). Next, the semiconductor layer (105) is epitaxially grown to a suitable device thickness, thereby forming a device layer (111).
摘要翻译：提供了一种用于产生MEMS结构的方法。根据该方法，提供一种包括基板（101）和单晶半导体层（105）的制品，并且具有包括设置在基板和半导体层之间的第一介电材料的牺牲层（103）。产生一个开口（107），其延伸穿过半导体层（105）和牺牲层（103），并露出基底（101）的一部分。然后在开口（107）中形成包括第二电介质材料的锚定部分（109）。接下来，将半导体层（105）外延生长至合适的器件厚度，从而形成器件层（111）。

2. 发明授权

US08659167B1 Sensor packaging method and sensor packages 有权
标题翻译：传感器封装方法和传感器封装
公开(公告)号：US08659167B1
公开(公告)日：2014-02-25
申请号：US13597824
申请日：2012-08-29
申请人： Philip H. Bowles , Paige M. Holm , Stephen R. Hooper , Raymond M. Roop
发明人： Philip H. Bowles , Paige M. Holm , Stephen R. Hooper , Raymond M. Roop
IPC分类号： H01L29/84
CPC分类号： H01L23/528 , B81C1/0023 , B81C1/00238 , B81C2201/019 , B81C2203/0792 , H01L2224/48091 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A method (80) entails providing (82) a structure (117), providing (100) a controller element (102, 24), and bonding (116) the controller element to an outer surface (52, 64) of the structure. The structure includes a sensor wafer (92) and a cap wafer (94). Inner surfaces (34, 36) of the wafers (92, 94) are coupled together, with sensors (30) interposed between the wafers. One wafer (94, 92) includes a substrate portion (40, 76) with bond pads (42) formed on its inner surface (34, 36). The other wafer (94, 92) conceals the substrate portion (40, 76). After bonding, methodology (80) entails forming (120) conductive elements (60) on the element (102, 24), removing (126) material sections (96, 98, 107) from the wafers to expose the bond pads, forming (130) electrical interconnects (56), applying (134) packaging material (64), and singulating (138) to produce sensor packages (20, 70).
摘要翻译：方法（80）需要提供（82）结构（117），提供（100）控制器元件（102,24），并将控制器元件（116）结合（116）到结构的外表面（52,64）。该结构包括传感器晶片（92）和盖晶片（94）。晶片（92,94）的内表面（34,36）被耦合在一起，传感器（30）置于晶片之间。一个晶片（94,92）包括具有形成在其内表面（34,36）上的接合焊盘（42）的衬底部分（40,76）。另一个晶片（94,92）隐藏基板部分（40,76）。在结合之后，方法学（80）需要在元件（102,24）上形成（120）导电元件（60），从晶片去除（126）材料部分（96,98,107）以暴露接合焊盘，形成 130）电互连（56），施加（134）包装材料（64）和单分离（138）以产生传感器封装（20,70）。

3. 发明授权

US5291607A Microprocessor having environmental sensing capability 失效
标题翻译：具有环境感知能力的微处理器
公开(公告)号：US5291607A
公开(公告)日：1994-03-01
申请号：US965549
申请日：1992-10-23
申请人： Ljubisa Ristic , William C. Dunn , Bertrand F. Cambou , Lewis E. Terry , Raymond M. Roop
发明人： Ljubisa Ristic , William C. Dunn , Bertrand F. Cambou , Lewis E. Terry , Raymond M. Roop
IPC分类号： H02H5/00 , G06F15/20 , G01D5/00
CPC分类号： H02H5/00
摘要： A microprocessor having a monolithically integrated environmental sensor is provided. The microprocessor is shielded from an environmental signal by isolation which is specific to the type of sensor used, thereby allowing the sensor to be exposed to the environmental signal. Optionally, high current drive circuitry is integrated with the microprocessor-sensor circuit to provide a monolithic device which allows control of power loads based in part on output from an environmental sensing device.
摘要翻译：提供具有单片集成环境传感器的微处理器。微处理器通过隔离来屏蔽环境信号，这是特定于使用的传感器类型，从而允许传感器暴露于环境信号。可选地，高电流驱动电路与微处理器传感器电路集成以提供单片设备，其允许部分地基于来自环境感测设备的输出来控制功率负载。

4. 发明申请

US20160356740A1 PROTECTED SENSOR FIELD EFFECT TRANSISTORS 有权
公开(公告)号：US20160356740A1
公开(公告)日：2016-12-08
申请号：US14731795
申请日：2015-06-05
申请人： Patrice M. Parris , Weize Chen , Richard J. de Souza , Jose Fernandez Villasenor , Md M. Hoque , David E. Niewolny , Raymond M. Roop
发明人： Patrice M. Parris , Weize Chen , Richard J. de Souza , Jose Fernandez Villasenor , Md M. Hoque , David E. Niewolny , Raymond M. Roop
IPC分类号： G01N27/414 , B01L3/00
CPC分类号： G01N27/4148 , B01L3/5027 , B01L3/502715 , B01L3/50273 , B01L2200/10 , B01L2200/12 , B01L2300/04 , B01L2300/041 , B01L2300/0645 , B01L2300/0887 , B01L2400/0415 , B01L2400/0418 , G01N27/28 , G01N27/414 , H01L21/67259 , H01L29/4933 , H01L29/66431 , H01L29/66462 , H01L29/7833 , H01L31/119
摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

5. 发明申请

US20140015123A1 SENSOR PACKAGE AND METHOD OF FORMING SAME 有权
标题翻译：传感器封装及其形成方法
公开(公告)号：US20140015123A1
公开(公告)日：2014-01-16
申请号：US13546902
申请日：2012-07-11
申请人： Philip H. Bowles , Paige M. Holm , Stephen R. Hooper , Raymond M. Roop
发明人： Philip H. Bowles , Paige M. Holm , Stephen R. Hooper , Raymond M. Roop
IPC分类号： H01L21/56 , H01L23/498 , H01L21/78
CPC分类号： B81B7/0006 , B81B7/0077 , B81B2201/02 , B81C1/0023 , H01L2224/48091 , H01L2224/48464 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A method (70) of forming sensor packages (20) entails providing a sensor wafer (74) having sensors (30) formed on a side (26) positioned within areas (34) delineated by bonding perimeters (36), and providing a controller wafer (82) having control circuitry (42) at one side (38) and bonding perimeters (46) on an opposing side (40). The bonding perimeters (46) of the controller wafer (82) are bonded to corresponding bonding perimeters (36) of the sensor wafer (74) to form a stacked wafer structure (48) in which the control circuitry (42) faces outwardly. The controller wafer (82) is sawn to reveal bond pads (32) on the sensor wafer (74) which are wire bonded to corresponding bond pads (44) formed on the same side (38) of the wafer (82) as the control circuitry (42). The structure (48) is encapsulated in packaging material (62) and is singulated to produce the sensor packages (20).
摘要翻译：形成传感器封装（20）的方法（70）需要提供传感器晶片（74），传感器晶片（74）具有形成在位于通过接合周边（36）所描绘的区域（34）内的侧面（26）上的传感器（30），并且提供控制器具有在一侧（38）处的控制电路（42）和在相对侧（40）上的接合周边（46）的晶片（82）。控制器晶片（82）的接合周边（46）被接合到传感器晶片（74）的对应的接合周边（36），以形成其中控制电路（42）面向外的堆叠的晶片结构（48）。锯切控制器晶片（82）以露出传感器晶片（74）上的接合焊盘（32），该接合焊盘引线键合到形成在晶片（82）的同一侧（38）上的对应接合焊盘（44）电路（42）。结构（48）被封装在包装材料（62）中，并被分割以产生传感器封装（20）。

6. 发明授权

US5260596A Monolithic circuit with integrated bulk structure resonator 失效
标题翻译：具有集成体积结构谐振器的单片电路
公开(公告)号：US5260596A
公开(公告)日：1993-11-09
申请号：US681258
申请日：1991-04-08
申请人： William C. Dunn , H. Ming Liaw , Ljubisa Ristic , Raymond M. Roop
发明人： William C. Dunn , H. Ming Liaw , Ljubisa Ristic , Raymond M. Roop
IPC分类号： H01L27/20 , H03H9/05 , H03H9/17 , H03H9/19 , H03H9/24 , H01L29/66 , H01L29/96
CPC分类号： H03H9/173 , H01L27/20 , H03H9/0542 , H03H9/2426 , H03H9/2457
摘要： A structure is provided to integrate bulk structure resonators into a monolithic integrated circuit chip. The chip also contains the remaining circuit components (17, 21, 24) required for the desired system function. Micromachining techniques are used to fabricate both support and a cavity (11, 27, 28) which allows mechanical vibration without interference. Alternative embodiments incorporate the use of non-piezoelectric mechanical resonators (14), quartz crystal resonators (18) and thin film piezoelectric resonators (22). Each type of resonator is used for the range of frequencies to which it is suited, providing a family of monolithic resonators capable of being used with integrated circuits having operating frequencies from a few hundred hertz to over 500 Mhz.
摘要翻译：提供了将体结构谐振器集成到单片集成电路芯片中的结构。该芯片还包含所需系统功能所需的其余电路元件（17,21,24）。微加工技术用于制造支撑件和腔体（11,27,28），其允许机械振动而不受干扰。替代实施例包括使用非压电机械谐振器（14），石英晶体谐振器（18）和薄膜压电谐振器（22）。每种类型的谐振器用于其适合的频率范围，提供能够与具有几百赫兹至500Mhz以上的工作频率的集成电路一起使用的单片谐振器系列。

7. 发明申请

US20160370314A1 PROTECTED SENSOR FIELD EFFECT TRANSISTORS 有权
标题翻译：保护传感器场效应晶体管
公开(公告)号：US20160370314A1
公开(公告)日：2016-12-22
申请号：US15251141
申请日：2016-08-30
申请人： Patrice M. Parris , Weize Chen , Richard J. de Souza , Jose Fernandez Villasenor , Md M. Hoque , David E. Niewolny , Raymond M. Roop
发明人： Patrice M. Parris , Weize Chen , Richard J. de Souza , Jose Fernandez Villasenor , Md M. Hoque , David E. Niewolny , Raymond M. Roop
IPC分类号： G01N27/414 , G01N27/28 , B01L3/00
CPC分类号： G01N27/4148 , B01L3/5027 , B01L3/502715 , B01L3/50273 , B01L2200/10 , B01L2200/12 , B01L2300/04 , B01L2300/041 , B01L2300/0645 , B01L2300/0887 , B01L2400/0415 , B01L2400/0418 , G01N27/28 , G01N27/414 , H01L21/67259 , H01L29/4933 , H01L29/66431 , H01L29/66462 , H01L29/7833 , H01L31/119
摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.
摘要翻译：保护传感器场效应晶体管（SFET）。 SFET包括半导体衬底，场效应晶体管和感测电极。 SFET还包括由半导体衬底支撑的分析物接收区域，与感测电极接触，并被配置为接收分析物流体。分析物接收区域至少部分封闭。在一些实施方案中，分析物接收区域可以是在分析物入口和分析物出口之间延伸的封闭分析物通道。在这些实施例中，封闭的分析物通道延伸使得分析物入口和分析物出口与感测电极间隔开。在一些实施例中，SFET包括至少部分地包围分析物接收区并由可溶于分析物流体内的覆盖材料形成的覆盖结构。这些方法包括制造SFET的方法。

8. 发明授权

US5493248A Integrated circuit for sensing an environmental condition and producing a high power circuit 失效
标题翻译：用于感测环境条件并产生高功率电路的集成电路
公开(公告)号：US5493248A
公开(公告)日：1996-02-20
申请号：US933968
申请日：1992-08-24
申请人： William C. Dunn , Ljubisa Ristic , Bertrand F. Cambou , Lewis E. Terry , Raymond M. Roop
发明人： William C. Dunn , Ljubisa Ristic , Bertrand F. Cambou , Lewis E. Terry , Raymond M. Roop
IPC分类号： G01D3/028 , H01L35/00 , H01L25/00 , H03K3/00
CPC分类号： G01D3/028
摘要： An environmental sensor integrated with high current drive device is provided. An environmental sensor is fabricated on a semiconductor substrate using conventional MOS process used for N-well CMOS logic and DMOS power transistors. An N-well is preferably used as a junction etch stop for micromachining of mechanical sensor components. A high voltage P-type region is used to electrically isolate the high current device from the sensor device. By locating the sensor device away from the high current drive device on a common semiconductor substrate, good performance can be achieved from the sensor even while the high current device dissipates a large amount of power.
摘要翻译：提供与大电流驱动装置集成的环境传感器。使用用于N阱CMOS逻辑和DMOS功率晶体管的常规MOS工艺在半导体衬底上制造环境传感器。优选使用N阱作为用于机械传感器部件的微加工的结腐蚀终止。高压P型区域用于将高电流装置与传感器装置电隔离。通过将传感器装置定位在公共半导体衬底上的高电流驱动装置上，即使在高电流装置耗散大量功率的情况下也可以从传感器获得良好的性能。

9. 发明授权

US5329815A Vibration monolithic gyroscope 失效
标题翻译：振动单片陀螺仪
公开(公告)号：US5329815A
公开(公告)日：1994-07-19
申请号：US810064
申请日：1991-12-19
申请人： William C. Dunn , Raymond M. Roop
发明人： William C. Dunn , Raymond M. Roop
IPC分类号： G01C19/5719 , G01P9/04
CPC分类号： G01C19/5719
摘要： A vibration gyroscope including a central mounting post and a planar mass symmetrically affixed thereto for vibrational movement. The post and mass are formed from a single layer of semiconductor material deposited on a substrate, such as silicon. Capacitive plates positioned below and above the mass, formed by depositing two additional layers of semiconductor material, are utilized for driving the mass and sensing vibration produced by the Coriolis effect.
摘要翻译：振动陀螺仪，其包括中心安装柱和对称地固定在其上的平面质量用于振动运动。柱和质量由沉积在诸如硅的衬底上的单层半导体材料形成。通过沉积两个另外的半导体材料层而形成的位于质量块下方和上方的电容板用于驱动质量并感测由科里奥利效应产生的振动。

10. 发明授权

US09927392B2 Sensing field effect transistor devices, systems in which they are incorporated, and methods of their fabrication 有权
公开(公告)号：US09927392B2
公开(公告)日：2018-03-27
申请号：US14459841
申请日：2014-08-14
申请人： Raymond M. Roop , Jose Fernandez Villasenor , Stephen R. Hooper , Patrice M. Parris
发明人： Raymond M. Roop , Jose Fernandez Villasenor , Stephen R. Hooper , Patrice M. Parris
IPC分类号： G01N27/414 , H05K3/10
CPC分类号： G01N27/4148
摘要： Embodiments of sensing devices include one or more integrated circuit (IC) die, a housing, and a fluid barrier material. Each IC die includes an electrode-bearing surface and a contact surface. One of the die includes an SFET with a sensing electrode proximate to the electrode-bearing surface. The same or a different die includes a reference electrode proximate to the electrode-bearing surface. The die(s) also include IC contacts at the contact surface(s), and conductive structures coupled between the SFET, the reference electrode, and the IC contacts. The housing includes a mounting surface, and housing contacts formed at the mounting surface. The IC contacts are coupled to the housing contacts. The fluid barrier material is positioned between the mounting surface and the IC die. The fluid barrier material provides a fluid barrier between the IC and housing contacts and a space that encompasses the sensing electrode and the reference electrode.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式