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1. 发明授权

US5061838A Toroidal electron cyclotron resonance reactor 失效
标题翻译： TOROIDAL ELECTRON CYCLOTRON共振反应器
公开(公告)号：US5061838A
公开(公告)日：1991-10-29
申请号：US370594
申请日：1989-06-23
申请人： Barton G. Lane , Herbert H. Sawin , Donna L. Smatlak
发明人： Barton G. Lane , Herbert H. Sawin , Donna L. Smatlak
IPC分类号： H01J37/32
CPC分类号： H01J37/32357
摘要： A toroidal ECR reactor is described in which a poloidal magnetic field is established in a plasma generating chamber in which a specimen to be processed is disposed on an electrode in a specimen chamber. Microwaves and gaseous reactants are introduced into the plasma generating chamber. A plasma discharge occurs in which high energy electrons are confined in a plasma source region extending between a magnetic mirror formed in the specimen chamber out of line-of-sight to the wafer(s) when disposed on the electrode. A baffle region formed between the two chambers prevents microwaves from entering the specimen chamber. The reactor is particularly suitable for etching or depositing films on semiconductor substrates, since the sensitive substrates are not exposed to the high energy ions and/or photons of the source region.
摘要翻译：描述了一种环形ECR反应器，其中在等离子体产生室中建立极向磁场，其中待处理样品设置在样品室中的电极上。将微波和气态反应物引入等离子体产生室。发生等离子体放电，其中当设置在电极上时，高能电子被限制在等离子体源区域中，等离子体源区域在形成于样本室之间的磁反射镜之外延伸到视线以外的晶片。形成在两个室之间的挡板区域防止微波进入样品室。反应器特别适合于在半导体衬底上蚀刻或沉积膜，因为敏感衬底不暴露于源区的高能离子和/或光子。

2. 发明申请

US20090047447A1 Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor 审中-公开
标题翻译：用于去除化学气相沉积反应器内部的表面沉积物和钝化内表面的方法
公开(公告)号：US20090047447A1
公开(公告)日：2009-02-19
申请号：US11497790
申请日：2006-08-02
申请人： Herbert H. Sawin , Bo Bai , Ju Jin An
发明人： Herbert H. Sawin , Bo Bai , Ju Jin An
IPC分类号： C23C16/511 , C23C16/513 , C09K3/00 , B08B5/00 , C11D3/02 , C11D3/16 , C11D3/20
CPC分类号： C23C16/4405 , B08B7/0035 , H01J37/32862
摘要： The present invention relates to plasma cleaning methods for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic devices. The present invention also provides gas mixtures and activated gas mixtures which provide superior performance in removing deposits from a surface. The methods involve activating a gas mixture comprising a carbon or sulfur source, NF3, and optionally, an oxygen source to form an activated gas, and contacting the activated gas mixture with surface deposits to remove the surface deposits wherein the activated gas mixture acts to passivate the interior surfaces of the apparatus to reduce the rate of surface recombination of gas phase species.
摘要翻译：本发明涉及用于从表面（例如用于制造电子器件的沉积室内部）去除表面沉积物的等离子体清洗方法。本发明还提供气体混合物和活性气体混合物，其在从表面去除沉积物方面提供优异的性能。所述方法包括活化包含碳源或硫源的气体混合物，NF 3和任选的氧源以形成活化气体，并使活化气体混合物与表面沉积物接触以除去表面沉积物，其中活性气体混合物起钝化作用该装置的内表面以降低气相物种的表面复合速率。

3. 发明授权

US6153115A Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra 失效
标题翻译：用等离子体发射光谱的多元统计分析监测等离子体工艺
公开(公告)号：US6153115A
公开(公告)日：2000-11-28
申请号：US956575
申请日：1997-10-23
申请人： Minh Le , Kuang Han Chen , Taber H. Smith , Duane S. Boning , Herbert H. Sawin
发明人： Minh Le , Kuang Han Chen , Taber H. Smith , Duane S. Boning , Herbert H. Sawin
IPC分类号： G01N21/68 , G01N21/73 , H01J37/32 , H01L21/302 , H01L21/3065 , G01J3/457
CPC分类号： H01J37/32935 , G01N21/73
摘要： Plasma process analysis techniques are provided. The intensity of each of a number, P, of a plurality of radiation wavelengths that are emitted from a plasma process are monitored as the process proceeds. Indications of P-dimensional correlations between the intensities of the P monitored wavelengths are produced as the process proceeds. Then the produced correlation indications are compared with a prespecified correlation indication generated based on historical conditions for the plasma process, to determine the status condition of the process as the process proceeds. With this technique, the use of a priori, expected, specific templates is not required for evaluating radiation emission data during a plasma process. Instead the techniques investigate and discover the multiple complex correlations that form between various radiation emission wavelengths during a plasma process, and do not impose an expectation for a specific correlation or trend between the various wavelengths. The discovered correlations found to exist between the radiation wavelengths are then employed for monitoring a plasma process based on the discovered correlations. The analysis techniques enables evaluation of interactions occurring across the entire spectrum of detected radiation emission wavelengths, and thus can accomplish detection and analysis of changes in a given plasma process due to shifts in the electrical and physical process environment as well as changes in a given process due to procession through stages of the process.
摘要翻译：提供等离子体工艺分析技术。随着过程的进行，监测从等离子体处理发射的多个辐射波长的数量P的强度。 P监测波长的强度之间的P维相关指示随着过程的进行而产生。然后将所产生的相关指示与基于等离子体处理的历史条件产生的预先指定的相关指标进行比较，以在过程进行时确定过程的状态条件。使用这种技术，在等离子体处理期间评估辐射发射数据不需要使用先验的，期望的特定模板。相反，该技术研究并发现在等离子体处理过程中在各种辐射发射波长之间形成的多个复杂相关性，并且不对各种波长之间的特定相关性或趋势施加期望。发现在辐射波长之间发现存在的相关性被用于基于所发现的相关性监测等离子体过程。分析技术使得能够评估在所检测的辐射发射波长的整个频谱上发生的相互作用，并且因此可以实现由于电和物理过程环境的变化以及给定过程中的变化而给定的等离子体处理中的变化的检测和分析由于游行过程的阶段。

4. 发明授权

US5954884A UV/halogen metals removal process 失效
标题翻译： UV /卤素金属去除工艺
公开(公告)号：US5954884A
公开(公告)日：1999-09-21
申请号：US818890
申请日：1997-03-17
申请人： Andrew Scott Lawing , Robert T. Fayfield , Herbert H. Sawin , Jane Chang
发明人： Andrew Scott Lawing , Robert T. Fayfield , Herbert H. Sawin , Jane Chang
IPC分类号： C23F4/00 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3213 , B08B3/12
CPC分类号： H01L21/02046 , H01L21/32136
摘要： A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.
摘要翻译：描述了适用于从基材表面去除金属污染物的氯基干洗系统，其中金属污染物被氯化并通过UV照射还原成挥发性金属氯化物。选择氯气分压，温度，紫外线带宽和/或基板暴露于含氯气体和紫外线的过程参数，以便实质上除去金属而不会过多的基板粗糙化。

5. 发明授权

US06183566B2 UV/halogen metals removal process 有权
标题翻译： UV /卤素金属去除工艺
公开(公告)号：US06183566B2
公开(公告)日：2001-02-06
申请号：US09323663
申请日：1999-06-01
申请人： Andrew Scott Lawing , Robert T. Fayfield , Herbert H. Sawin , Jane Chang
发明人： Andrew Scott Lawing , Robert T. Fayfield , Herbert H. Sawin , Jane Chang
IPC分类号： B08B312
CPC分类号： H01L21/02046 , H01L21/32136
摘要： A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.
摘要翻译：描述了适用于从基材表面去除金属污染物的氯基干洗系统，其中金属污染物被氯化并通过UV照射还原成挥发性金属氯化物。选择氯气分压，温度，紫外线带宽和/或基板暴露于含氯气体和紫外线的过程参数，以便实质上除去金属而不会过多的基板粗糙化。

6. 发明授权

US6156435A Chemical vapor deposition of fluorocarbon polymer thin films 有权
标题翻译：氟碳聚合物薄膜的化学气相沉积
公开(公告)号：US6156435A
公开(公告)日：2000-12-05
申请号：US280377
申请日：1999-03-29
申请人： Karen K. Gleason , Scott J. H. Limb , Edward F. Gleason , Herbert H. Sawin , David J. Edell
发明人： Karen K. Gleason , Scott J. H. Limb , Edward F. Gleason , Herbert H. Sawin , David J. Edell
IPC分类号： B05D7/24 , C08F2/46 , C23C16/46 , C23C16/515 , H01L21/312 , H01L23/532 , B32B27/00
CPC分类号： C23C16/463 , B05D1/62 , C23C16/46 , C23C16/515 , H01L21/3127 , H01L23/5329 , H01L2924/0002 , Y10T428/21 , Y10T428/2933 , Y10T428/2938 , Y10T428/3154 , Y10T428/31544
摘要： Provided are methods for forming a fluorocarbon polymer thin film on the surface of a structure. In one method, a monomer gas is exposed to a source of heat having a temperature sufficient to pyrolyze the monomer gas and produce a source of reactive CF.sub.2 species in the vicinity of the structure surface. The structure surface is maintained substantially at a temperature lower than that of the heat source to induce deposition and polymerization of the CF.sub.2 species on the structure surface. In another method for forming a fluorocarbon polymer thin film, the structure is exposed to a plasma environment in which a monomer gas is ionized to produce reactive CF.sub.2 species. The plasma environment is produced by application to the monomer gas of plasma excitation power characterized by an excitation duty cycle having alternating intervals in which excitation power is applied and in which no excitation power is applied to the monomer gas. The monomer gas employed in the methods preferably includes hexafluoropropylene oxide. The monomer gas pyrolysis and plasma excitation methods can be carried out individually, sequentially, or simultaneously. Flexible fluorocarbon polymer thin films can thusly be produced on wires, twisted wires, neural probes, tubing, complex microstructures, substrates, microfabricated circuits, and other structures. The thin films have a compositional CF.sub.2 fraction of at least about 50%, a dielectric constant of less than about 1.95, and a crosslinking density of less than about 35%.
摘要翻译：提供了在结构的表面上形成氟碳聚合物薄膜的方法。在一种方法中，将单体气体暴露于具有足以热解单体气体并在结构表面附近产生反应性CF 2物质源的热源。结构表面基本保持在比热源低的温度下，以引起CF2物质在结构表面上的沉积和聚合。在形成氟碳聚合物薄膜的另一种方法中，该结构暴露于其中单体气体被离子化以产生反应性CF 2物质的等离子体环境中。等离子体环境通过应用于等离子体激发功率的单体气体产生，其特征在于具有施加激发功率的交替间隔的激发占空比，并且其中没有激发功率施加到单体气体。在该方法中使用的单体气体优选包括六氟环氧丙烷。单体气体热解和等离子体激发方法可以单独，顺序或同时进行。柔性氟碳聚合物薄膜因此可以在电线，绞线，神经探针，管道，复合微结构，基板，微结构电路和其他结构上生产。薄膜具有至少约50％的组成CF 2分数，小于约1.95的介电常数和小于约35％的交联密度。

7. 发明授权

US06153269A Chemical vapor deposition of fluorocarbon polymer thin films 有权
公开(公告)号：US06153269A
公开(公告)日：2000-11-28
申请号：US280196
申请日：1999-03-29
申请人： Karen K. Gleason , Scott J. H. Limb , Edward F. Gleason , Herbert H. Sawin , David J. Edell
发明人： Karen K. Gleason , Scott J. H. Limb , Edward F. Gleason , Herbert H. Sawin , David J. Edell
IPC分类号： B05D7/24 , C08F2/46 , C23C16/46 , C23C16/515 , H01L21/312 , H01L23/532 , C08J7/18
CPC分类号： C23C16/463 , B05D1/62 , C23C16/46 , C23C16/515 , H01L21/3127 , H01L23/5329 , H01L2924/0002 , Y10T428/21 , Y10T428/2933 , Y10T428/2938 , Y10T428/3154 , Y10T428/31544
摘要： Provided are methods for forming a fluorocarbon polymer thin film on the surface of a structure. In one method, a monomer gas is exposed to a source of heat having a temperature sufficient to pyrolyze the monomer gas and produce a source of reactive CF.sub.2 species in the vicinity of the structure surface. The structure surface is maintained substantially at a temperature lower than that of the heat source to induce deposition and polymerization of the CF.sub.2 species on the structure surface. In another method for forming a fluorocarbon polymer thin film, the structure is exposed to a plasma environment in which a monomer gas is ionized to produce reactive CF.sub.2 species. The plasma environment is produced by application to the monomer gas of plasma excitation power characterized by an excitation duty cycle having alternating intervals in which excitation power is applied and in which no excitation power is applied to the monomer gas. The monomer gas employed in the methods preferably includes hexafluoropropylene oxide. The monomer gas pyrolysis and plasma excitation methods can be carried out individually, sequentially, or simultaneously. Flexible fluorocarbon polymer thin films can thusly be produced on wires, twisted wires, neural probes, tubing, complex microstructures, substrates, microfabricated circuits, and other structures. The thin films have a compositional CF.sub.2 fraction of at least about 50%, a dielectric constant of less than about 1.95, and a crosslinking density of less than about 35%.

8. 发明授权

US5450205A Apparatus and method for real-time measurement of thin film layer thickness and changes thereof 失效
标题翻译：用于实时测量薄膜层厚度及其变化的装置和方法
公开(公告)号：US5450205A
公开(公告)日：1995-09-12
申请号：US70118
申请日：1993-05-28
申请人： Herbert H. Sawin , William T. Conner , Timothy J. Dalton , Emanuel M. Sachs
发明人： Herbert H. Sawin , William T. Conner , Timothy J. Dalton , Emanuel M. Sachs
IPC分类号： G01B11/06 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/66 , H01L21/00
CPC分类号： H01J37/32935 , G01B11/0675
摘要： A new technique has been developed to measure etching or deposition rate uniformity in situ using a CCD camera which views the wafer during plasma processing. The technique records the temporal modulation of plasma emission or laser illumination reflected from the wafer; this modulation is caused by interferometry as thin films are etched or deposited. The measured etching rates compare very well with those determined by Helium-Neon laser interference. This technique is capable of measuring etching rates across 100-mm or larger wafers. It can resolve etch rate variations across a wafer or within a die. The invention can also be used to make endpoint determinations in etching operations as well as measuring the absolute thickness of thin films.
摘要翻译：已经开发了一种新技术来测量在等离子体处理期间观察晶片的CCD相机的原位蚀刻或沉积速率均匀性。该技术记录从晶片反射的等离子体发射或激光照射的时间调制; 这种调制是由于薄膜被蚀刻或沉积而由干涉测量引起的。测量的蚀刻速率与由氦 - 氖激光干涉确定的蚀刻速率相当。该技术能够测量100 mm或更大晶片的蚀刻速率。它可以解决跨晶片或芯片内的蚀刻速率变化。本发明还可以用于在蚀刻操作中进行端点测定以及测量薄膜的绝对厚度。

9. 发明授权

US06740247B1 HF vapor phase wafer cleaning and oxide etching 失效
标题翻译： HF气相晶圆清洗和氧化蚀刻
公开(公告)号：US06740247B1
公开(公告)日：2004-05-25
申请号：US09498303
申请日：2000-02-04
申请人： Yong-Pil Han , Herbert H. Sawin
发明人： Yong-Pil Han , Herbert H. Sawin
IPC分类号： B44C122
CPC分类号： H01L21/02049 , H01L21/31116
摘要： The invention provides HF vapor process conditions that can be precisely controlled with a high degree of reproducibility for a wide range of starting wafer conditions. These HF vapor processes for, e.g., etching oxide on a semiconductor substrate, cleaning a contaminant on a semiconductor substrate, removing etch residue from a metal structure on a semiconductor substrate, and cleaning a metal contact region of a semiconductor substrate. In the HF vapor process, a semiconductor substrate having oxide, a contaminant, metal etch residue, or a contact region to be processed is exposed to hydrofluoric acid vapor and water vapor in a process chamber held at temperature and pressure conditions that are controlled to form on the substrate no more than a sub-monolayer of etch reactants and products produced by the vapor as the substrate is processed by the vapor. The sub-monolayer HF vapor process regime is defined in accordance with the invention to proceed under conditions wherein no more than about 95% of a monolayer of coverage of the substrate surface occurs.
摘要翻译：本发明提供可以在宽范围的起始晶片条件下以高重现性精确地控制的HF蒸汽工艺条件。这些HF蒸气处理用于例如在半导体衬底上蚀刻氧化物，清洁半导体衬底上的污染物，从半导体衬底上的金属结构去除蚀刻残留物，以及清洁半导体衬底的金属接触区域。在HF蒸气工艺中，具有氧化物，污染物，金属蚀刻残渣或待加工的接触区域的半导体衬底暴露于保持在受控制形成的温度和压力条件下的处理室中的氢氟酸蒸气和水蒸汽在基底上不超过蚀刻反应物的亚单层和由蒸气产生的产物，因为基底被蒸气处理。根据本发明定义亚单层HF蒸气过程方案，其条件是在不超过约95％的单层覆盖衬底表面的情况下进行。

10. 发明授权

US6107166A Vapor phase cleaning of alkali and alkaline earth metals 失效
标题翻译：碱和碱土金属的气相清洗
公开(公告)号：US6107166A
公开(公告)日：2000-08-22
申请号：US924725
申请日：1997-08-29
申请人： Jeffery W. Butterbaugh , Herbert H. Sawin , Zhe Zhang , Yong-Pil Han
发明人： Jeffery W. Butterbaugh , Herbert H. Sawin , Zhe Zhang , Yong-Pil Han
IPC分类号： H01L21/306 , H01L21/322
CPC分类号： H01L21/02049 , Y10S438/906
摘要： A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.
摘要翻译：从半导体衬底的表面去除I族或II族金属物质的方法。该方法包括将表面暴露于包含HF，第二化合物和硅烷化合物的气态反应物混合物中，并从表面除去挥发性产物。本发明还涉及一种用于从半导体衬底中蚀刻氧化物的方法，包括将表面暴露于包含HF，第二化合物和硅烷化合物的气态反应物混合物中，并从表面除去挥发性产物。

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