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1. 发明授权

US09659753B2 Grooved insulator to reduce leakage current 有权
公开(公告)号：US09659753B2
公开(公告)日：2017-05-23
申请号：US14454493
申请日：2014-08-07
申请人： Applied Materials, Inc.
发明人： Tae Cho , Sang Won Kang , Dongqing Yang , Raymond W. Lu , Peter Hillman , Nicholas Celeste , Tien Fak Tan , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01J37/32
CPC分类号： H01J37/3255 , H01J37/32082
摘要： A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

2. 发明申请

US20180337024A1 SEMICONDUCTOR PROCESSING CHAMBER FOR IMPROVED PRECURSOR FLOW 审中-公开
公开(公告)号：US20180337024A1
公开(公告)日：2018-11-22
申请号：US15981089
申请日：2018-05-16
申请人： Applied Materials, Inc.
发明人： Tien Fak Tan , Dmitry Lubomirsky , Soonwook Jung , Soonam Park , Raymond W. Lu , Phong Pham , Edwin C. Suarez
IPC分类号： H01J37/32 , H01L21/3065 , C23C16/455
摘要： Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel.

3. 发明申请

US20160042920A1 GROOVED INSULATOR TO REDUCE LEAKAGE CURRENT 有权
标题翻译：绝缘绝缘子减少泄漏电流
公开(公告)号：US20160042920A1
公开(公告)日：2016-02-11
申请号：US14454493
申请日：2014-08-07
申请人： Applied Materials, Inc.
发明人： TAE CHO , Sang Won Kang , Dongqing Yang , Raymond W. Lu , Peter Hillman , Nicholas Celeste , Tien Fak Tan , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01J37/32 , H01J9/24
CPC分类号： H01J37/3255 , H01J37/32082
摘要： A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.
摘要翻译：等离子体源包括具有各自表面的第一电极和第二电极，以及在电极之间并与电极接触的绝缘体。电极表面和绝缘体表面基本上限定等离子体腔。绝缘体表面限定一个或多个凹槽，其构造成防止在绝缘体表面上以连续形式沉积材料。产生等离子体的方法包括将一种或多种气体引入到由第一电极，与第一电极接触的绝缘体的表面和面对第一电极的第二电极限定的等离子体腔中。绝缘体表面限定一个或多个凹槽，其中绝缘体表面的部分不暴露于空腔的中心区域。该方法还包括在第一和第二电极之间提供RF能量以在空腔内产生等离子体。

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