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1. 发明授权

US4780805A Low/high input voltage power supply 失效
标题翻译：低/高输入电压电源
公开(公告)号：US4780805A
公开(公告)日：1988-10-25
申请号：US151033
申请日：1988-02-01
申请人： Andrew J. Chewuk , Harold H. Cheffer , James L. Gates
发明人： Andrew J. Chewuk , Harold H. Cheffer , James L. Gates
IPC分类号： H02M1/10 , H02M7/19
CPC分类号： H02M1/10 , Y10T307/675
摘要： A power supply which automatically configures itself to correctly respond to either a low or a high level of an A.C. supply voltage to supply a single level D.C. output voltage. The supply switches between a voltage doubler and a full wave rectifier operation dependent on the level of the A.C. supply voltage. Once the supply switches to the full wave rectifier configuration, a latch prevents the power supply from switching to the voltage doubler configuration until the A.C. supply voltage is removed from the power supply. The latch prevents damage to components by preventing the power supply from switching to a low input voltage configuration when, in fact, a high input voltage is present.
摘要翻译：自动配置电源以正确响应交流电源电压的低电平或高电平以提供单电平直流输出电压。电源在电压倍增器和全波整流器操作之间切换，取决于交流电源电压的电平。一旦电源切换到全波整流器配置，锁存器可防止电源切换到倍压器配置，直到交流电源从电源中移除。当事实上存在高输入电压时，锁存器可防止电源切换到低输入电压配置而损坏组件。

2. 发明授权

US5489554A Method of making a 3-dimensional circuit assembly having electrical contacts that extend through the IC layer 失效
标题翻译：制造具有延伸穿过IC层的电触点的三维电路组件的方法
公开(公告)号：US5489554A
公开(公告)日：1996-02-06
申请号：US192207
申请日：1994-02-04
申请人： James L. Gates
发明人： James L. Gates
IPC分类号： H01L21/98 , H01L25/065 , H01L21/18
CPC分类号： H01L21/76898 , H01L25/0657 , H01L25/50 , H01L2225/06541 , H01L2225/06596 , H01L2924/0002
摘要： A 3-dimensional circuit assembly includes a lower substrate, a first integrated circuit (IC) layer that is adhered to and electrically insulated from the substrate, electrical contacts for the IC layer, and separate electrical contacts for the substrate that extend through and are insulated from the IC layer. The IC layer is surmounted by an insulating layer through which the electrical contacts also extend, and across which interconnections between different contacts may be made. The IC layer and substrate are held together by an adhesion layer, with the adhesion, IC and insulating layers all being thin enough to assume the coefficient of thermal expansion for the underlying substrate, which is much thicker. The substrate may itself have a second IC layer to which contacts are made, or it may be implemented as the photodetector of a focal plane array. Two standard wafers are used to form the package, with the substrate for the upper wafer removed either before or after bonding to the lower wafer. Additional IC layers may be added by adding additional wafers in a similar fashion.
摘要翻译：三维电路组件包括下基板，与基板粘合并与其电绝缘的第一集成电路（IC）层，用于IC层的电触点，以及用于基板的分开的电触点，其延伸穿过并被绝缘从IC层。 IC层被绝缘层所覆盖，电绝缘层通过该绝缘层延伸，并且可以在其间形成不同接触之间的互连。 IC层和衬底通过粘合层保持在一起，其粘合性，IC和绝缘层都足够薄以承担下层衬底的热膨胀系数，其厚度更厚。衬底本身可以具有形成触点的第二IC层，或者可以将其实现为焦平面阵列的光电检测器。使用两个标准晶片来形成封装，在与下晶片接合之前或之后去除用于上晶片的衬底。可以通过以类似的方式添加另外的晶片来添加附加的IC层。

3. 发明授权

US5110299A High density interconnect 失效
标题翻译：高密度互连
公开(公告)号：US5110299A
公开(公告)日：1992-05-05
申请号：US486669
申请日：1990-02-28
申请人： James L. Gates
发明人： James L. Gates
IPC分类号： H01L21/60 , H01L21/603 , H01L23/498 , H05K3/34
CPC分类号： H01L24/80 , H01L23/49811 , H05K3/3436 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/14 , H05K2201/09427 , Y02P70/613 , Y10T29/49147 , Y10T29/49208
摘要： A pair of elongated rectangular metallic bumps are formed on two separate surfaces. The bumps are aligned orthogonally prior to being merged by hybridization to form a high density hybrid assembly. Translational misalignment does not change the interconnect area. Rotational misalignment causes only a slight change in the interconnect area. The bump surface area is increased by merging the bumps. This reduces the hybridization pressure which prevents the interconnect area from increasing in size, commonly known as mash out. The invention makes high density hybrid assemblies practical because it reduces the risk of short circuits between adjacent interconnects and results in a high yield in production.

4. 发明授权

US5554849A Micro-bolometric infrared staring array 失效
标题翻译：微辐射红外瞄准阵列
公开(公告)号：US5554849A
公开(公告)日：1996-09-10
申请号：US372982
申请日：1995-01-17
申请人： James L. Gates
发明人： James L. Gates
IPC分类号： G01J5/20 , H01L27/146 , H04N5/33
CPC分类号： H01L27/14649 , G01J5/20 , H04N5/33
摘要： A micro-bolometric infrared (IR) staring array is described. The active element in each pixel within a two-dimensional array is a device having a selectively forward-biased p-n junction, e.g. a selectively biased diode. Each diode in the array serves as both an IR energy detecting element and a switching element. Each diode in a given row of the IR pixel array to be sensed, or read, is driven at a constant voltage, rendering its IR response highly controllable in the forward biased operating curve of the diodes in the addressed row. Diodes not being driven are, due to their reverse bias, in their off state producing minute leakage current and thus make no significant contribution to the sensed current representing a given pixel's IR exposure. The row-addressed driven or active diodes are sensed column by column by sample and hold techniques to produce a two-dimensional IR pixel image of a target. This simplifies the geometries as well as the cell structures while increasing the fill ratio to greater than approximately fifty percent. Moreover, manufacturing yields are greatly improved because of the topologic and process simplicities and compatibility with standard integrated circuit processes.
摘要翻译：描述了微辐射红外（IR）凝视阵列。二维阵列内的每个像素中的有源元件是具有选择性地正向偏置的p-n结的器件，例如，选择性偏置二极管。阵列中的每个二极管都用作IR能量检测元件和开关元件。要感测或读取的IR像素阵列的给定行中的每个二极管以恒定电压驱动，使其IR响应在寻址行中的二极管的正向偏置工作曲线中高度可控。不被驱动的二极管由于其反向偏压而处于截止状态，产生微小的漏电流，因此对表示给定像素的IR曝光的感测电流没有显着贡献。通过采样和保持技术逐行地感测行寻址的驱动或有源二极管，以产生目标的二维IR像素图像。这简化了几何形状和单元结构，同时将填充率提高到大约百分之五十。此外，由于拓扑和工艺简单性以及与标准集成电路工艺的兼容性，制造产量大大提高。

5. 发明授权

US5122669A Wideband schottky focal plane array 失效
标题翻译：宽带肖特基焦平面阵列
公开(公告)号：US5122669A
公开(公告)日：1992-06-16
申请号：US668526
申请日：1991-03-13
申请人： James R. Herring , James L. Gates
发明人： James R. Herring , James L. Gates
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14603 , H01L27/1464 , H01L27/14649
摘要： A radiation detector includes a silicon substrate (12) having opposing first and second major surfaces, the substrate absorbing visible radiation incident upon the first major surface and passing into the substrate for generating charge carriers therefrom. The detector further includes a silicide layer (16) overlying the second major surface of the substrate, the silicide layer forming a Schottky-barrier junction with the underlying substrate. The silicide layer absorbs IR radiation for generating charge carriers therefrom. The substrate has a resistivity of approximately one thousand ohms per centimeter or greater for enhancing responsivity to visible radiation. A cavity structure (16) overlies the silicide layer and has a reflector (18) optically coupled thereto for reflecting IR radiation that passes through the silicide layer back to the silicide layer. To further enhance responsivity the substrate is thinned and has a thickness within a range of approximately 25 microns to approximately 125 microns.
摘要翻译：辐射检测器包括具有相对的第一和第二主表面的硅衬底（12），所述衬底吸收入射在第一主表面上的可见辐射并且进入用于从其产生电荷载流子的衬底。检测器还包括覆盖在衬底的第二主表面上的硅化物层（16），硅化物层与下面的衬底形成肖特基势垒结。硅化物层吸收IR辐射以从其产生电荷载流子。衬底的电阻率大约为每千厘米或更大，以提高对可见光辐射的响应度。空腔结构（16）覆盖在硅化物层上并且具有与其光学耦合的反射器（18），用于反射穿过硅化物层的IR辐射回到硅化物层。为了进一步提高响应性，基板被薄化并且具有在约25微米至约125微米的范围内的厚度。

6. 发明授权

US4019200A Monolithic surface acoustic wave signal storage device 失效
标题翻译：单片表面声波信号存储装置
公开(公告)号：US4019200A
公开(公告)日：1977-04-19
申请号：US586107
申请日：1975-06-11
申请人： Larry R. Adkins , James L. Gates
发明人： Larry R. Adkins , James L. Gates
IPC分类号： G10K11/36 , H04N3/10 , H01L29/84 , H01L29/78 , H01L29/96 , H04N3/00
CPC分类号： G10K11/36 , H04N3/10
摘要： Monolithic acoustoelectric signal storage device and means for generating a surface acoustic wave on piezoelectric material and propagating the wave into a storage region of the device. An electric field applied across a storage structure in the storage region of the device interacts with the electric field associated with the surface acoustic wave to produce a holographic replica of the wave in a spatially varying distribution of charge trapped at a solid dielectric-dielectric interface. The stored waveform may then be read out at a later time or, in nonlinear signal processing applications, the electric field of a subsequently generated surface acoustic wave may be propagated into the storage region to interact with the trapped charge to produce an output signal.
摘要翻译：整体声电信号存储装置和用于在压电材料上产生表面声波并将波传播到装置的存储区域中的装置。在器件的存储区域中施加的存储结构的电场与与表面声波相关联的电场相互作用，以产生在固态电介质 - 电介质界面上俘获的电荷的空间变化分布中的波的全息复制品。然后可以在稍后时间读出所存储的波形，或者在非线性信号处理应用中，随后产生的声表面波的电场可以传播到存储区域中，以与捕获的电荷相互作用以产生输出信号。

7. 发明授权

US5043820A Focal plane array readout employing one capacitive feedback transimpedance amplifier for each column 失效
标题翻译：对每列使用一个电容反馈跨阻放大器的焦平面阵列读数
公开(公告)号：US5043820A
公开(公告)日：1991-08-27
申请号：US329229
申请日：1989-03-27
申请人： Richard H. Wyles , James L. Gates , Steven D. Gaalema
发明人： Richard H. Wyles , James L. Gates , Steven D. Gaalema
IPC分类号： G11C11/409 , G11C11/4096 , H04N1/028 , H04N5/33 , H04N5/374
CPC分类号： G11C11/4096 , H04N3/1506 , H04N5/33
摘要： A readout circuit for use with a focal plane array that employs a single transistor in each unit cell and a single capacitive feedback transimpedance amplifier to process the outputs of each column of detector elements of the array. The capacitive feedback transimpedance amplifiers extract the signals associated with the pixels along a particular row of the array. The present invention permits high performance readouts to be constructed with very little circuitry in the unit cells. Only a single minimum sized transistor switch is required in each unit cell to perform readout and reset functions for the array. In the disclosed embodiment, the readout circuit comprises an array of unit cells, each cell comprising a detector input circuit, a single transistor and a single charge storage capacitor. Row address circuits are coupled to the cells in each row of the array. A plurality of capacitive feedback transimpedance amplifiers are coupled to the cells in each column of the array. The amplifiers process charge derived from the detector elements and stored in the charge storage capacitor of each unit cell. Column multiplexing circuits multiplex the output signals provided by each of the amplifiers. Column address circuits are coupled to the column multiplexing circuits which couple output signals from each of the multiplexer circuits as the output from the readout circuit.

8. 发明授权

US4371885A Charge coupled device improved meander channel serial register 失效
标题翻译：电荷耦合器件改善曲折通道串行寄存器
公开(公告)号：US4371885A
公开(公告)日：1983-02-01
申请号：US274994
申请日：1981-06-18
申请人： William J. Parrish , James L. Gates
发明人： William J. Parrish , James L. Gates
IPC分类号： H01L27/148 , H01L29/10 , H01L29/423 , H01L29/768 , H01L29/78 , G11C19/28 , H01L29/04
CPC分类号： H01L29/42396 , H01L27/14875 , H01L29/1062 , H01L29/76875
摘要： A meander channel charge couple device having a pair of parallel colinear elongate electrodes extending longitudinally along the length of the register disposed over a meander channel and formed in the same conductive layer so that they both reside at the same height above the semiconductor substrate, thereby providing a symmetrical surface potential distribution. Charge transfer instabilities beneath a gap separating the electrodes are eliminated by providing an additional set of electrodes, each extending transversely to the meander channel and to the first pair of parallel electrodes and spanning the gap. Contact is made by each of the longitudinal electrode pairs to alternate ones of the transverse electrodes and a two-phase clock system is applied to the longitudinal electrode pair.
摘要翻译：曲折通道电荷耦合器件具有一对沿着寄存器长度纵向延伸设置在曲折通道上并且形成在相同导电层中的平行线形细长电极，使得它们都位于半导体衬底上方的相同高度处，从而提供对称表面电位分布。通过提供一组额外的电极来消除分离电极的间隙下方的电荷转移不稳定性，每组电极横向于曲折通道和第一对平行电极延伸并跨越间隙。由纵向电极对中的每个横向电极交替地形成接触，并且将两相时钟系统施加到纵向电极对。

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