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1. 发明授权

US06875091B2 Method and apparatus for conditioning a polishing pad with sonic energy 失效
标题翻译：用声波能量调理抛光垫的方法和装置
公开(公告)号：US06875091B2
公开(公告)日：2005-04-05
申请号：US09796955
申请日：2001-02-28
申请人： Allan M. Radman , Alan J. Jensen , Helmuth Treichel , Robert G. Boehm , Michael S. Lacy , Eric A. Dunton
发明人： Allan M. Radman , Alan J. Jensen , Helmuth Treichel , Robert G. Boehm , Michael S. Lacy , Eric A. Dunton
IPC分类号： B24B1/04 , B24B37/04 , B24B53/007 , B24B53/10 , B24B53/07
CPC分类号： B24B1/04 , B24B53/017 , B24B53/10
摘要： A method and apparatus for conditioning a polishing pad is described, wherein the polishing pad has a polishing surface for polishing the semiconductor wafer. The method includes positioning a sonic energy generator above the polishing surface of the polishing pad, and applying sonic energy to the polishing surface of the polishing pad. The apparatus a sonic energy generator adapted to be positioned above the polishing surface, the sonic energy generator including a transducer, and a liquid carrier in flow communication with the transducer, wherein the transducer transmits sonic energy into the liquid carrier and the liquid carrier is applied to the polishing surface of the polishing belt.
摘要翻译：描述了一种用于调整抛光垫的方法和装置，其中抛光垫具有用于抛光半导体晶片的抛光表面。该方法包括将抛光垫的抛光表面上方的声能量发生器定位，并将抛光垫的抛光表面施加声能。所述设备适于定位在所述抛光表面上方，所述声能发生器包括换能器和与所述换能器流动连通的液体载体，其中所述换能器将声能传递到所述液体载体中，并且所述液体载体被施加到抛光带的抛光表面。

2. 发明授权

US5629053A Method for manufacturing microcrystalline cubic boron-nitride-layers 失效
标题翻译：微晶立方氮化硼层的制造方法
公开(公告)号：US5629053A
公开(公告)日：1997-05-13
申请号：US681131
申请日：1991-04-05
申请人： Helmuth Treichel , Oswald Spindler , Rainer Braun , Bernhard Neureither , Thomas Kruck
发明人： Helmuth Treichel , Oswald Spindler , Rainer Braun , Bernhard Neureither , Thomas Kruck
IPC分类号： C23C16/34 , C23C16/50
CPC分类号： C23C16/342
摘要： The method of the present invention provides in a simple manner, the deposition of boron nitride layers with microcrystalline cubic structure which are suitable as insulating layers in VLSI-circuits, as mask membranes in x-ray lithography, as well as coating hard substances. Due to the use of excited starting substances that already contain boron and nitrogen in one molecule and are preferably liquid or solid, and the use of a plasma-CVD-method, the method can be performed using in temperatures of below 500.degree. C. The excitation of the starting substance proceeds preferably in inductive or capacitative fashion in a hollow cathode.
摘要翻译：本发明的方法以简单的方式提供了适用于VLSI电路中的绝缘层的微晶立方结构的氮化硼层的沉积，x射线光刻中的掩模膜以及涂覆硬物质。由于在一分子中使用已经含有硼和氮的优选的起始物质，优选为液体或固体，并且使用等离子体CVD法，可以在低于500℃的温度下进行。起始物质的激发优选以感应或电容方式在中空阴极中进行。

3. 发明授权

US5399389A Method for locally and globally planarizing chemical vapor deposition of SiO.sub.2 layers onto structured silicon substrates 失效
标题翻译：将SiO 2层的化学气相沉积局部和全局平面化到结构化硅衬底上的方法
公开(公告)号：US5399389A
公开(公告)日：1995-03-21
申请号：US94337
申请日：1993-07-20
申请人： Konrad Hieber , Jasper Von Tomkewitsch , Oswald Spindler , Helmuth Treichel , Zvonimir Gabric , Alexander Gschwandtner
发明人： Konrad Hieber , Jasper Von Tomkewitsch , Oswald Spindler , Helmuth Treichel , Zvonimir Gabric , Alexander Gschwandtner
IPC分类号： C30B29/18 , H01L21/316 , H01L21/3205 , H01L21/768 , B05D3/06 , H01L21/02
CPC分类号： H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02304 , H01L21/02315 , H01L21/31612 , H01L21/76819
摘要： In the ozone-activated deposition of insulating layers, different growth rates can be achieved on differently constituted surfaces. When the surfaces of the structured silicon substrates lying at different levels are differently constituted or, respectively, are intentionally varied such that the SiO.sub.2 insulating layer grows more slowly on the higher surfaces than on the more deeply disposed surfaces and when deposition is carried out until the surfaces of the rapidly growing and slowly growing layer regions form a step-free, planar level, a local and global planarization is achieved.
摘要翻译：在绝缘层的臭氧活化沉积中，可以在不同构造的表面上实现不同的生长速率。当不同层次的结构硅衬底的表面被不同地构成或分别有意地改变，使得SiO 2绝缘层在较高表面上比在更深的设置表面上更缓慢地生长，并且当沉积被执行直到快速生长和缓慢生长的层区域的表面形成无梯度的平面水平，实现局部和全局平坦化。

4. 发明申请

US20120186572A1 SILICON WAFER SAWING FLUID AND PROCESS FOR USE THEREOF 审中-公开
标题翻译：硅波切割流体及其使用方法
公开(公告)号：US20120186572A1
公开(公告)日：2012-07-26
申请号：US13387937
申请日：2010-07-28
申请人： Helmuth Treichel , Dave Bohling , Mark George
发明人： Helmuth Treichel , Dave Bohling , Mark George
IPC分类号： H01L21/301 , B28D5/00 , B23Q11/10
CPC分类号： B28D5/0076
摘要： A process is provided in which a metal chelating agent is dissolved in an aqueous or glycol-based cooling fluid to form a chelating solution with a chelating agent concentration. A silicon boule is cut with a saw to detach a silicon wafer from the boule while the interface between the silicon boule and the saw is bathed with the chelating solution during the cutting.
摘要翻译：提供了一种方法，其中将金属螯合剂溶解在水性或乙二醇型冷却流体中以形成螯合剂浓度的螯合溶液。用锯切割硅芯，以从芯片上分离硅晶片，同时在切割期间硅胶和锯之间的界面用螯合溶液浸泡。

5. 发明申请

US20120111360A1 Method and Apparatus for Cleaning a Substrate 审中-公开
标题翻译：清洗基材的方法和装置
公开(公告)号：US20120111360A1
公开(公告)日：2012-05-10
申请号：US12943868
申请日：2010-11-10
申请人： Helmuth Treichel , Flint Thorne , Rito Ligutom
发明人： Helmuth Treichel , Flint Thorne , Rito Ligutom
IPC分类号： B08B7/00 , A46B13/00
CPC分类号： B08B1/02 , A46B13/001 , A46B2200/3086 , B08B1/04 , H01L21/67046 , H01L21/67219
摘要： An integrated cleaner for processing disks is provided. The integrated cleaner includes a pair of spaced apart scrubbers each having a plurality of spaced apart brushes disposed along a length of the scrubbers, the pair of spaced apart scrubbers oriented horizontally and configured to receive a vertically oriented disk therebetween. A track is disposed below a gap defined between the pair of spaced apart scrubbers. The track guides an edge of the disk as the disk travels between ends of the pair of spaced apart scrubbers. The plurality of spaced apart brushes includes a first and/or second pair of opposing brushes having a roughness that is greater than a second and/or third pair of brushes downstream from the first and/or second pair of brushes, respectively. The integrated cleaner includes an edge cleaner configured to exert a force along an edge of the vertically oriented disk during a portion of travel of the vertically oriented disk along the track. A method of cleaning a substrate is also provided.
摘要翻译：提供了一种用于处理磁盘的集成清洁器。集成清洁器包括一对间隔开的洗涤器，每个洗涤器具有沿洗涤器长度设置的多个间隔开的刷子，一对间隔开的洗涤器水平地定向并且构造成在其间容纳垂直取向的盘。轨道设置在限定在一对间隔开的洗涤器之间的间隙的下方。当盘在两对间隔开的洗涤器的端部之间行进时，轨道引导盘的边缘。多个间隔开的刷子包括第一和/或第二对相对的刷子，其具有大于分别从第一和/或第二对刷子下游的第二和/或第三对刷子的粗糙度。集成清洁器包括边缘清洁器，其构造成在垂直定向的盘沿着轨道的行进的一部分期间沿着垂直取向的盘的边缘施加力。还提供了清洁基板的方法。

6. 发明申请

US20060264066A1 Multilayer multicomponent high-k films and methods for depositing the same 审中-公开
标题翻译：多层多组分高k膜及其沉积方法
公开(公告)号：US20060264066A1
公开(公告)日：2006-11-23
申请号：US11400366
申请日：2006-04-07
申请人： Larry Bartholomew , Helmuth Treichel , Jon Owyang
发明人： Larry Bartholomew , Helmuth Treichel , Jon Owyang
IPC分类号： H01L21/31 , H01L23/58
CPC分类号： H01L21/3142 , C23C16/308 , C23C16/45523 , H01L21/0214 , H01L21/02145 , H01L21/02148 , H01L21/02153 , H01L21/02161 , H01L21/0217 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02194 , H01L21/02266 , H01L21/0228 , H01L21/28194 , H01L21/28202 , H01L21/3143 , H01L21/3145 , H01L21/31604 , H01L21/31608 , H01L21/31637 , H01L21/31645 , H01L28/40 , H01L29/513 , H01L29/517 , H01L29/518
摘要： The present invention provides systems and methods for forming a multi-layer, multi-component high-k dielectric film. In some embodiments, the present invention provides systems and methods for forming high-k dielectric films that comprise hafnium, titanium, oxygen, nitrogen, and other components. In a further aspect of the present invention, the dielectric films are formed having composition gradients.
摘要翻译：本发明提供了用于形成多层多组分高k电介质膜的系统和方法。在一些实施方案中，本发明提供用于形成包含铪，钛，氧，氮和其它组分的高k电介质膜的系统和方法。在本发明的另一方面，形成具有组成梯度的电介质膜。

7. 发明申请

US20110186088A1 SUBSTRATE NEST WITH DRIP REMOVER 审中-公开
标题翻译：基板NEST与DRIP REMOVER
公开(公告)号：US20110186088A1
公开(公告)日：2011-08-04
申请号：US12697260
申请日：2010-01-31
申请人： Kenneth C. Miller , Rito Ligutom , Helmuth Treichel , Flint Thorne
发明人： Kenneth C. Miller , Rito Ligutom , Helmuth Treichel , Flint Thorne
IPC分类号： B08B3/00
CPC分类号： H01L21/67057 , H01L21/67313
摘要： An apparatus for supporting a work piece is provided. The apparatus includes outer support rails having support slots for supporting the work piece, the outer support rails disposed on opposing sides of the apparatus between opposing end members of the apparatus. Inner support rails extend between the opposing end members of the apparatus. An inner surface of each of the inner support rails has vertically disposed extensions extending therefrom. The vertically disposed extensions are aligned in pairs along a length of the inner support rails. A moveable device is disposed between the pairs of vertically disposed extensions. The moveable device is buoyantly moveable so that as the work piece is lifted, the moveable device follows. A method for cleaning a work piece is also included.
摘要翻译：提供一种用于支撑工件的装置。该装置包括具有用于支撑工件的支撑槽的外部支撑轨道，设置在该装置的相对端部构件的相对侧上的外部支撑轨道。内部支撑轨道在装置的相对的端部构件之间延伸。每个内部支撑轨道的内表面具有从其延伸的垂直设置的延伸部。垂直设置的延伸部沿着内部支撑轨道的长度成对排列。可移动装置设置在成对的垂直设置的延伸部之间。可移动装置是可浮动的，因此当工件被提起时，移动装置跟随。还包括用于清洁工件的方法。

8. 发明申请

US20060159847A1 Method and apparatus for low temperature dielectric deposition using monomolecular precursors 审中-公开
标题翻译：使用单分子前体的低温电介质沉积的方法和装置
公开(公告)号：US20060159847A1
公开(公告)日：2006-07-20
申请号：US11239880
申请日：2005-09-30
申请人： Cole Porter , Karl Williams , Helmuth Treichel
发明人： Cole Porter , Karl Williams , Helmuth Treichel
IPC分类号： C23C16/00
CPC分类号： H01L21/67017 , C23C16/345 , C23C16/402 , C23C16/4412 , C23C16/45512 , C23C16/45578
摘要： In one aspect, the present invention provides a method and apparatus configured to form dielectric films or layers at low temperature. In one embodiment dielectric films such as silicon nitride (SixNy) and silicon dioxide (SiO2) are deposited at temperatures equal to or below 550° C. In a further aspect of the present invention, a method and apparatus configured to provide cross flow injection of reactant gases is provided. In one embodiment, reactant gasses (such as a monomolecular precursor and NH3) flow into vertically positioned adjustable injectors that mix reactants prior to injection into the wafer region.
摘要翻译：一方面，本发明提供一种被配置为在低温下形成介电膜或层的方法和装置。在一个实施例中，在等于或低于550℃的温度下沉积诸如氮化硅（SixNy）和二氧化硅（SiO 2）之类的电介质膜。在本发明的另一方面，一种方法和提供了构造成提供反应气体的横流注入的装置。在一个实施方案中，反应物气体（例如单分子前体和NH 3）流入垂直定位的可调喷射器，其在注入晶片区域之前将反应物混合。

9. 发明授权

US6057229A Method for metallizing submicron contact holes in semiconductor bodies 失效
标题翻译：在半导体器件中金属化亚微米接触孔的方法
公开(公告)号：US6057229A
公开(公告)日：2000-05-02
申请号：US828677
申请日：1997-03-31
申请人： Konrad Hieber , Helmuth Treichel , Heinrich Koerner
发明人： Konrad Hieber , Helmuth Treichel , Heinrich Koerner
IPC分类号： C23C16/06 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/52 , H01L29/45 , H01L21/4763
CPC分类号： H01L21/76865 , H01L21/76843 , H01L21/76877 , H01L23/485 , H01L29/456 , H01L2924/0002 , H01L2924/3011 , Y10S438/907 , Y10S438/908
摘要： Submicron contact holes in semiconductor bodies are metalized in a single operation. A titanium-rich layer is first deposited, which is followed by a low-resistance TiSi.sub.2 layer. The two layers are thus deposited in one contiguous CVD process inside a single CVD chamber.
摘要翻译：半导体体中的亚微米接触孔在一次操作中被金属化。首先沉积富钛层，其后是低电阻TiSi 2层。因此，这两层沉积在单个CVD室内的一个连续的CVD工艺中。

10. 发明授权

US4990365A Method for producing silicon boronitride layers 失效
标题翻译：硼氮化硼层的制造方法
公开(公告)号：US4990365A
公开(公告)日：1991-02-05
申请号：US367358
申请日：1989-06-16
申请人： Helmuth Treichel , Oswald Spindler , Bernhard Neureither
发明人： Helmuth Treichel , Oswald Spindler , Bernhard Neureither
IPC分类号： C23C16/30 , C23C16/44 , H01L21/31 , H01L21/316 , H01L21/56 , H01L23/29
CPC分类号： H01L21/56 , C23C16/30 , C23C16/44 , H01L23/291 , H01L2924/0002
摘要： To create silicon boronitride layers that are utilized as intermetallization layers and/or as final passivation layers, the present invention provides a method wherein fluid initial compounds that already molecularly contain a part of the target composition of the silicon boronitride layer to be produced are utilized, and deposited through chemical vapor deposition in an alternating electromagnetic field. The silicon boronitride layers produced in this fashion have a dielectric constant whose value is below 4 .epsilon..sub.o and are distinguished by good insulating and blocking properties and by a high break down strength.
摘要翻译：为了产生用作金属间化层和/或作为最终钝化层的氮化硼层，本发明提供了一种方法，其中已经分子含有要生产的硼氮化硼层的目标组成的一部分的流体初始化合物被利用，并通过化学气相沉积在交变电磁场中沉积。以这种方式制造的硼氮化硼层具有低于4εo的介电常数，并且具有良好的绝缘和阻挡特性以及高的断裂强度。

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