会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Gaseous fueled engine system and method
    • 气体发动机系统及方法
    • US06502550B1
    • 2003-01-07
    • US09683702
    • 2002-02-05
    • Allan J. KotwickiSiamak HashemiSteven Joseph SzwabowskiWoong-chul YangYin ChenYong-Wha Kim
    • Allan J. KotwickiSiamak HashemiSteven Joseph SzwabowskiWoong-chul YangYin ChenYong-Wha Kim
    • F02P500
    • F02D41/009F02D37/02F02P7/067
    • An ignition and fuel control system 10 of a vehicle 18 is provided including a controller 22. The controller 22 is electrically coupled to an ignition system 14, a fuel system 16, a crankshaft position sensor 32, and a camshaft position sensor 34. The crankshaft position sensor 32 senses a crankshaft position and generates a crankshaft position signal. A camshaft position sensor 34 senses a camshaft position and generates a camshaft position signal. The controller 22 determines a crankshaft position and a camshaft position in response to the crankshaft position signal and the camshaft position signal respectively. The controller 22 identifies a reference engine cylinder in response to the crankshaft position and the camshaft position and generates a synchronization value. The controller 22 also enables the ignition system 14 and the fuel system 16 in response to the synchronization value.
    • 车辆18的点燃和燃料控制系统10设置有控制器22.控制器22电连接到点火系统14,燃料系统16,曲轴位置传感器32和凸轮轴位置传感器34.曲轴 位置传感器32感测曲轴位置并产生曲轴位置信号。 凸轮轴位置传感器34感测凸轮轴位置并产生凸轮轴位置信号。 控制器22分别响应于曲轴位置信号和凸轮轴位置信号来确定曲轴位置和凸轮轴位置。 控制器22响应于曲轴位置和凸轮轴位置识别参考发动机气缸,并产生同步值。 控制器22还能够响应于同步值启用点火系统14和燃料系统16。
    • 9. 发明申请
    • Nonvolatile memory device and method of forming the same
    • 非易失存储器件及其形成方法
    • US20070040211A1
    • 2007-02-22
    • US11209145
    • 2005-08-22
    • Shao KuYin ChenWenpin LuTahui Wang
    • Shao KuYin ChenWenpin LuTahui Wang
    • H01L29/792
    • H01L29/7923H01L29/1045
    • A multi-bit memory cell includes a substrate; a multi-bit charge-trapping cell over the substrate, the multi-bit charge-trapping cell having a first lateral side and a second lateral side; a source region in the substrate, a portion of the source region being under the first side of the multi-bit charge-trapping cell; a drain region in the substrate, a portion of the drain region being under the second side of the multi-bit charge-trapping cell; and a channel region in the substrate between the source region and the drain region. The channel region has one of a p-type doping and an n-type doping, and the doping is configured to provide a highest doping concentration near the central portion of the channel region.
    • 多位存储单元包括基板; 位于衬底上的多位电荷俘获电池,所述多位电荷俘获电池具有第一侧面和第二侧面; 源区域,源区域中的一部分位于多位电荷捕获单元的第一侧之下; 所述衬底中的漏极区域,所述漏极区域的一部分位于所述多位电荷俘获电池的第二侧的下方; 以及在源极区域和漏极区域之间的衬底中的沟道区域。 沟道区具有p型掺杂和n型掺杂之一,并且掺杂被配置为在沟道区的中心部分附近提供最高的掺杂浓度。