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    • 1. 发明授权
      US4154626A Process of making field effect transistor having improved threshold stability by ion-implantation 失效
    • Process of making field effect transistor having improved threshold stability by ion-implantation
    • 通过离子注入制造具有改善的阈值稳定性的场效应晶体管的工艺
    • US4154626A
    • 1979-05-15
    • US881095
    • 1978-02-24
    • Richard C. Joy , Ingrid E. Magdo , Alfred Phillips, Jr.
    • Richard C. Joy , Ingrid E. Magdo , Alfred Phillips, Jr.
    • H01L21/331 , H01L29/73 , H01L29/78 , H01L21/20 , H01L21/263
    • H01L29/7836 , Y10S148/053 , Y10S148/167
    • An improved field effect transistor device in a monocrystalline semiconductor body provided with source and drain regions and a gate electrode disposed over the channel between the source and drain regions wherein at least the drain region is formed of a first region where the impurity concentration increases with depth with the peak concentration being spaced inwardly from the major surface, and a second region located within the first region having a peak impurity concentration at the major surface. The drain region structure in operation promotes the current flow between the source and drain to flow deeper in the channel region and spaced from the gate dielectric layer.In the method for forming the field effect transistor, an impurity is introduced into the semiconductor body underlying at least the ultimate drain region, an epitaxial semiconductor layer deposited, and a second impurity region formed over the first region to form the drain contact.In an alternate embodiment of the method for forming a field effect transistor, a first ion implantation is formed in the drain region, such that the peak impurity concentration is located well within the body spaced from the surface thereof, and a second ion implantation, or diffusion, performed forming the source and also the ohmic contact for the drain which is located over the first region and within the first implanted region.
    • 设置有源极和漏极区域的单晶体半导体本体中的改进的场效应晶体管器件和设置在源极和漏极区域之间的沟道上的栅极电极，其中至少漏极区域由杂质浓度随深度增加的第一区域形成 峰值浓度与主表面向内间隔开，并且位于第一区域内的第二区域在主表面具有峰值杂质浓度。 在操作中的漏极区域结构促使源极和漏极之间的电流流动在沟道区域中更深地流动并且与栅极介电层间隔开。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 2. 发明授权
      US4028717A Field effect transistor having improved threshold stability 失效
    • Field effect transistor having improved threshold stability
    • 具有改善的阈值稳定性的场效应晶体管
    • US4028717A
    • 1977-06-07
    • US615251
    • 1975-09-22
    • Richard C. Joy , Ingrid E. Magdo , Alfred Phillips, Jr.
    • Richard C. Joy , Ingrid E. Magdo , Alfred Phillips, Jr.
    • H01L21/331 , H01L29/73 , H01L29/78
    • H01L29/7836 , Y10S148/053 , Y10S148/167
    • An improved field effect transistor device in a monocrystalline semiconductor body provided with source and drain regions and a gate electrode disposed over the channel between the source and drain regions wherein at least the drain region is formed of a first region where the impurity concentration increases with depth with the peak concentration being spaced inwardly from the major surface, and a second region located within the first region having a peak impurity concentration at the major surface. The drain region structure in operation promotes the current flow between the source and drain to flow deeper in the channel region and spaced from the gate dielectric layer.In the method for forming the field effect transistor, an impurity is introduced into the semiconductor body underlying at least the ultimate drain region, an epitaxial semiconductor layer deposited, and a second impurity region formed over the first region to form the drain contact.In an alternate embodiment of the method for forming a field effect transistor, a first ion implantation is formed in the drain region, such that the peak impurity concentration is located well within the body spaced from the surface thereof, and a second ion implantation, or diffusion, performed forming the source and also the ohmic contact for the drain which is located over the first region and within the first implanted region.
    • 设置有源极和漏极区域的单晶体半导体本体中的改进的场效应晶体管器件和设置在源极和漏极区域之间的沟道上的栅极电极，其中至少漏极区域由杂质浓度随深度增加的第一区域形成 峰值浓度与主表面向内间隔开，并且位于第一区域内的第二区域在主表面具有峰值杂质浓度。 在操作中的漏极区域结构促使源极和漏极之间的电流流动在沟道区域中更深地流动并且与栅极介电层间隔开。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 6. 发明授权
      US4089712A Epitaxial process for the fabrication of a field effect transistor having improved threshold stability 失效
    • Epitaxial process for the fabrication of a field effect transistor having improved threshold stability
    • 用于制造具有改进的阈值稳定性的场效应晶体管的外延工艺
    • US4089712A
    • 1978-05-16
    • US797895
    • 1977-05-17
    • Richard C. Joy , Ingrid E. Magdo , Alfred Phillips, Jr.
    • Richard C. Joy , Ingrid E. Magdo , Alfred Phillips, Jr.
    • H01L21/331 , H01L29/73 , H01L29/78 , H01L21/20
    • H01L29/7836 , Y10S148/053 , Y10S148/167
    • An improved field effect transistor device in a monocrystalline semiconductor body provided with source and drain regions and a gate electrode disposed over the channel between the source and drain regions wherein at least the drain region is formed of a first region where the impurity concentration increases with depth with the peak concentration being spaced inwardly from the major surface, and a second region located within the first region having a peak impurity concentration at the major surface. The drain region structure in operation promotes the current flow between the source and drain to flow deeper in the channel region and spaced from the gate dielectric layer.In the method for forming the field effect transistor, an impurity is introduced into the semiconductor body underlying at least the ultimate drain region, an epitaxial semiconductor layer deposited, and a second impurity region formed over the first region to form the drain contact.In an alternate embodiment of the method for forming a field effect transistor, a first ion implantation is formed in the drain region, such that the peak impurity concentration is located well within the body spaced from the surface thereof, and a second ion implantation, or diffusion, performed forming the source and also the ohmic contact for the drain which is located over the first region and within the first implanted region.
    • 设置有源极和漏极区域的单晶体半导体本体中的改进的场效应晶体管器件和设置在源极和漏极区域之间的沟道上的栅极电极，其中至少漏极区域由杂质浓度随深度增加的第一区域形成 峰值浓度与主表面向内间隔开，并且位于第一区域内的第二区域在主表面具有峰值杂质浓度。 在操作中的漏极区域结构促使源极和漏极之间的电流流动在沟道区域中更深地流动并且与栅极介电层间隔开。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
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