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    • 1. 发明授权
    • Error correction system for random access memory
    • 随机存取存储器纠错系统
    • US4031374A
    • 1977-06-21
    • US536142
    • 1974-12-24
    • Alan I. GroudanGeorge F. SchroederH. Lee Treffinger
    • Alan I. GroudanGeorge F. SchroederH. Lee Treffinger
    • G06F11/00G06F11/10G11C29/00
    • G06F11/1004
    • An error correction system is provided for a random access memory system of the magnetic core or plated wire type, and which serves to render the memory system immune to the effects of nuclear radiation, and the like. The system of the invention includes circumvent circuitry which serves to limit all currents in the memory access network to safe values during a radiation event, so as to pevent burn-out of the memory and of its associated components. The system of the invention also serves to correct single word errors which can occur to words being written or read during the radiation pulse. The single word error correction is achieved in a first embodiment of the invention by partitioning the fixed data program words in the memory into blocks; by providing an error correction word for each such block, and by reconstructing from the error correction word, the word being read or written during the radiation pulse. This is achieved in the first embodiment of the error correction system by first accessing the affected word, then loading all zeros into the memory address of the affected word, and then reconstructing the effected word by the provision of an "exclusive or" summing means which forms a computed error correction word for the entire block, including the affected word (which is now zeros), plus the original error correction word. The computed error correction word is a reconstruction of the affected data word. A second embodiment of the invention achieves the same correction in the case of the variable data storage portion of the memory, by means of a system which continuously up-dates the error correction word as the variable data in the memory is up-dated. Further embodiments of the invention provide error correction to the variable data words without the use of error correction words.
    • 为磁芯或电镀线型的随机存取存储器系统提供纠错系统,其用于使存储器系统免受核辐射的影响等。 本发明的系统包括规避电路,其用于将存储器访问网络中的所有电流限制在辐射事件期间的安全值,以便消除存储器及其相关组件的烧坏。 本发明的系统还用于校正在辐射脉冲期间被写入或读取的单词可能发生的单个字错误。 在本发明的第一实施例中,通过将存储器中的固定数据程序字划分成块来实现单字纠错; 通过为每个这样的块提供纠错字,并且通过从纠错字重建在辐射脉冲期间被读或写的字。 这在纠错系统的第一实施例中通过首先访问受影响的字,然后将全部零加载到受影响的字的存储器地址中,然后通过提供“排他或”求和装置来重建受影响的字, 形成整个块的计算误差校正字,包括受影响的字(现在是零),加上原来的纠错字。 计算出的纠错字是影响数据字的重建。 本发明的第二实施例在存储器的可变数据存储部分的情况下通过随着存储器中的可变数据被更新的连续地更新纠错字的系统来实现相同的校正。 本发明的其它实施例在不使用纠错字的情况下向可变数据字提供纠错。