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1. 发明授权

US07099135B2 Integrated inrush current limiter circuit and method 有权
标题翻译：集成涌流限流电路及方法
公开(公告)号：US07099135B2
公开(公告)日：2006-08-29
申请号：US10287831
申请日：2002-11-05
申请人： Alan Ball , David Briggs , Suzanne Nee , Stephen Robb
发明人： Alan Ball , David Briggs , Suzanne Nee , Stephen Robb
IPC分类号： H02H3/00
CPC分类号： H02H9/001 , H02H1/0007
摘要： An inrush current limiter circuit (20) includes a detection circuit (30) that produces a control signal (VDRIVE) from a sense current (ISENSE). A power transistor responds to the control signal and has a source (51) coupled to an input node (12) to receive a supply voltage (ground) and a drain (53) for routing a load current (ILOAD) to an output node (45) as a protection signal (VSW). A sense transistor responds to the control signal and has a source scaled to the source of the power transistor and coupled to the input node to route a portion of the load current to the output node as the sense current.
摘要翻译：浪涌电流限制器电路（20）包括检测电路（30），该检测电路从感测电流（I SENSE）产生控制信号（V SUB驱动）。功率晶体管响应于控制信号并且具有耦合到输入节点（12）的源（51）以接收电源电压（接地）和用于布线负载电流（I LOAD）的漏极（53） SUB>）作为保护信号（V SW SW）输出到输出节点（45）。感测晶体管响应于控制信号并且具有被缩放到功率晶体管的源并且耦合到输入节点的源，以将负载电流的一部分路由到输出节点作为感测电流。

2. 发明申请

US20050218963A1 Method of forming a self-gated transistor and structure therefor 有权
标题翻译：形成自门式晶体管及其结构的方法
公开(公告)号：US20050218963A1
公开(公告)日：2005-10-06
申请号：US10813501
申请日：2004-03-31
申请人： Alan Ball , Paul Harriman , Stephen Meek , Suzanne Nee
发明人： Alan Ball , Paul Harriman , Stephen Meek , Suzanne Nee
IPC分类号： H02M1/08 , H02M3/158 , H02M3/335 , H03B1/00 , H03K17/06 , H03K17/0814 , H03K17/082 , H03K17/30 , H03K17/693
CPC分类号： H03K17/302 , H02M1/08 , H02M3/1588 , H02M3/33592 , H03K17/063 , H03K17/08142 , H03K17/0822 , H03K17/693 , Y02B70/1466 , Y02B70/1475
摘要： In one embodiment, a self-gated transistor includes a sensing portion that generates a sense signal that is used to drive the self-gated transistor.
摘要翻译：在一个实施例中，自门控晶体管包括产生用于驱动自门控晶体管的感测信号的感测部分。

3. 发明申请

US20070258176A1 Shunt protection circuit and method therefor 有权
标题翻译：分流保护电路及其方法
公开(公告)号：US20070258176A1
公开(公告)日：2007-11-08
申请号：US11416506
申请日：2006-05-02
申请人： Alan Ball , Stephen Robb
发明人： Alan Ball , Stephen Robb
IPC分类号： H02H9/00
CPC分类号： H05B33/089 , H01L23/62 , H01L2924/0002 , H05B33/0824 , Y02B20/341 , H01L2924/00
摘要： In one embodiment, a protection device is used to protect a circuit. The protection device has a maximum rated power dissipation that is less than a maximum rated power dissipation of the circuit that is being protected.
摘要翻译：在一个实施例中，保护装置用于保护电路。保护装置的最大额定功耗小于被保护电路的最大额定功率损耗。

4. 发明申请

US20060274557A1 Method of forming an in-rush limiter and structure therefor 有权
公开(公告)号：US20060274557A1
公开(公告)日：2006-12-07
申请号：US11144417
申请日：2005-06-06
申请人： Alan Ball , Stephen Robb
发明人： Alan Ball , Stephen Robb
IPC分类号： H02M3/335 , G05F1/00
CPC分类号： G05F1/573
摘要： In one embodiment, an in-rush limiter is configured to control an output voltage to increase at a rate that is independent of the load that is powered by the in-rush limiter.

5. 发明申请

US20070004055A1 Method for regulating temperature and circuit therefor 有权
标题翻译：用于调节温度和电路的方法
公开(公告)号：US20070004055A1
公开(公告)日：2007-01-04
申请号：US11171018
申请日：2005-07-01
申请人： Alan Ball , Stephen Robb
发明人： Alan Ball , Stephen Robb
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： H01L23/34 , H01L2924/0002 , H01L2924/3011 , H03K17/122 , H03K17/145 , H01L2924/00
摘要： A method and circuit for managing thermal performance of an integrated circuit. Temperature sensing circuits and a plurality of power FETs that are coupled together in parallel are manufactured from a semiconductor substrate. Each temperature sensing circuit monitors the temperature of the portion of the semiconductor substrate near or including a corresponding power FET. When the temperature of the semiconductor substrate near one or more of the power FETs reaches a predetermined value, the corresponding temperature sensing circuit reduces a voltage appearing on the gate of the power FET. The reduced voltage increases the on-resistance of the power FET and channels a portion of its current to others of the plurality of power FETs. The power FET continues operating but with a reduced current flow. When the temperature of the semiconductor substrate falls below the predetermined value, the gate voltage of the power FET is increased to its nominal value.
摘要翻译：一种用于管理集成电路的热性能的方法和电路。并联的温度感测电路和多个功率FET由半导体衬底制造。每个温度感测电路监测半导体衬底的部分或附近的相应功率FET的温度。当一个或多个功率FET附近的半导体衬底的温度达到预定值时，相应的温度感测电路降低了功率FET的栅极上出现的电压。降低的电压增加功率FET的导通电阻，并将其电流的一部分引导到多个功率FET中的其他功率FET。功率FET继续工作，但电流减小。当半导体衬底的温度低于预定值时，功率FET的栅极电压增加到其标称值。

6. 发明申请

US20070236158A1 LED control circuit and method therefor 有权
标题翻译： LED控制电路及其方法
公开(公告)号：US20070236158A1
公开(公告)日：2007-10-11
申请号：US11399523
申请日：2006-04-07
申请人： Alan Ball , Stephen Robb
发明人： Alan Ball , Stephen Robb
IPC分类号： H05B37/02
CPC分类号： H05B33/0851
摘要： In one embodiment, an LED control circuit is configured control a current through an LED responsively to a value that is proportional to a control signal for values of the control signal that are less than a threshold value of the control signal and to control the current to a value that is proportional to the threshold value for values of the control signal that are greater than the threshold value.
摘要翻译：在一个实施例中，LED控制电路被配置为响应于与控制信号成比例的控制信号的值响应于控制信号的值而控制电流，所述值控制信号的值小于控制信号的阈值，并且控制电流与控制信号的阈值成比例的值大于阈值的值。

7. 外观设计

USD529491S1 Hand-held computer 失效
公开(公告)号：USD529491S1
公开(公告)日：2006-10-03
申请号：US29209316
申请日：2004-07-14
申请人： Alan Ball
设计人： Alan Ball

8. 外观设计

USD512058S1 Hand-held computer 失效
标题翻译：手提电脑
公开(公告)号：USD512058S1
公开(公告)日：2005-11-29
申请号：US29192829
申请日：2003-10-30
申请人： Alan Ball
设计人： Alan Ball

9. 外观设计

USD492994S1 Mouthpiece for an inhalation device 失效
公开(公告)号：USD492994S1
公开(公告)日：2004-07-13
申请号：US29172903
申请日：2002-12-18
申请人： Michael L. King , Alan Ball , James Taylor Lloyd
设计人： Michael L. King , Alan Ball , James Taylor Lloyd

10. 发明授权

US06333624B1 Circuit and method for a switching power supply with primary side transformer sensing 有权
标题翻译：具有初级侧变压器感测的开关电源的电路和方法
公开(公告)号：US06333624B1
公开(公告)日：2001-12-25
申请号：US09579124
申请日：2000-05-30
申请人： Alan Ball , Kristie Valdez
发明人： Alan Ball , Kristie Valdez
IPC分类号： G05F140
CPC分类号： H02M1/4258 , H02M3/33523 , H02M2001/0009 , Y02B70/126
摘要： A switching power supply (30) receives an AC voltage at a primary side of a transformer (36) and converts it to a regulated DC output voltage at the secondary side of the transformer (36). The switching power supply (30) includes a voltage regulation compensation circuit (52) to monitor the transformers primary side providing a reference signal VREF related to the transformers secondary side. Signal VCOMP is a current reference signal representative of the primary side inductor current flowing through the emitter of a power transistor (38). VCOMP is fed into a sample and hold circuit (70) and amplified to a DC level proportional to the peak level of the inductor current of the power transistor (38). The output of the sample and hold circuit (70) is fed to two inputs of a multiplier circuit (82) where the output thereof is a square of the two inputs fed to a k-factor circuit (83).
摘要翻译：开关电源（30）在变压器（36）的初级侧接收交流电压，并将其转换为变压器（36）的二次侧的稳定的直流输出电压。开关电源（30）包括电压调节补偿电路（52），用于监视变压器初级侧，提供与变压器次级侧相关的参考信号VREF。信号VCOMP是表示流过功率晶体管（38）的发射极的初级侧电感器电流的电流参考信号。 VCOMP被馈送到采样和保持电路（70）中并被放大到与功率晶体管（38）的电感电流的峰值电平成比例的直流电平。采样和保持电路（70）的输出被馈送到乘法器电路（82）的两个输入，其中输出是馈送到k因子电路（83）的两个输入的平方。

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