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1. 发明授权

US5792520A Method of manufacturing a reflector 失效
标题翻译：制造反射镜的方法
公开(公告)号：US5792520A
公开(公告)日：1998-08-11
申请号：US701267
申请日：1996-08-22
申请人： Akira Yamashita , Koichi Furukawa , Teruaki Orikasa , Noriaki Goto , Shigeki Matsunaka , Yoshitaka Kawada
发明人： Akira Yamashita , Koichi Furukawa , Teruaki Orikasa , Noriaki Goto , Shigeki Matsunaka , Yoshitaka Kawada
IPC分类号： B23K26/06 , C23F1/02 , H01Q15/14 , B05D3/00
CPC分类号： H01Q15/141 , B23K26/066 , C23F1/02
摘要： A copper film layer and a resin film are sequentially layered on a skin material, the resin film is irradiated with a laser beam so as to be removed, a mask is formed on the copper film layer by use of the residual of the resin film, thereafter, an etching process is provided thereto, so that a copper film layer pattern is formed on the reflective surface of the skin material.
摘要翻译：将铜膜层和树脂膜依次层叠在表皮材料上，用激光束照射树脂膜以除去，利用树脂膜的残留物在铜膜层上形成掩模，此后，向其提供蚀刻工艺，使得在皮肤材料的反射表面上形成铜膜层图案。

2. 发明授权

US08016985B2 Magnetron sputtering apparatus and method for manufacturing semiconductor device 有权
标题翻译：磁控溅射装置及半导体装置的制造方法
公开(公告)号：US08016985B2
公开(公告)日：2011-09-13
申请号：US11858494
申请日：2007-09-20
申请人： Shigeki Matsunaka , Osamu Yamazaki
发明人： Shigeki Matsunaka , Osamu Yamazaki
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01L21/2855 , H01L21/76843 , H01L21/76871
摘要： A magnetron sputtering apparatus includes: a target provided in a sputtering chamber; a susceptor opposed to the target; a high-frequency power supply connected to the susceptor; a plate provided outside the sputtering chamber and coaxial with a central axis of the target; a rotary motion mechanism configured to rotate the plate about the central axis; S-pole magnets placed on one side of the plate with their S-pole end directed to the target; and first and second N-pole magnets placed on the one side of the plate with their N-pole end directed to the target. The first N-pole magnets are placed along a circle coaxial with the plate and opposed to an outer peripheral vicinity of the target. The S-pole magnets are placed inside the first N-pole magnets and along a circle coaxial with the plate. The second N-pole magnets are placed inside the S-pole magnets and along a circle coaxial with the plate. Magnetic flux density of the first N-pole magnets and the second N-pole magnets are higher than magnetic flux density of the S-pole magnets.
摘要翻译：磁控溅射装置包括：设置在溅射室中的靶; 与目标相反的感受者; 连接到基座的高频电源; 设置在溅射室外部并与靶的中心轴同轴的板; 旋转运动机构，其构造成围绕所述中心轴线旋转所述板; 放置在板的一侧的S极磁体，其S极端指向目标; 并且第一和第二N极磁体放置在板的一侧，其N极端指向靶。第一N极磁体沿着与板同轴的圆形放置，并与靶的外周附近相对。 S极磁体放置在第一N极磁体内并沿着与板同轴的圆。第二N极磁体放置在S极磁体内并沿着与该板同轴的圆周。第一N极磁体和第二N极磁体的磁通密度高于S极磁体的磁通密度。

3. 发明申请

US20080169186A1 MAGNETRON SPUTTERING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：磁控溅射装置及制造半导体器件的方法
公开(公告)号：US20080169186A1
公开(公告)日：2008-07-17
申请号：US11859138
申请日：2007-09-21
申请人： Katsumi Iyanagi , Shigeki Matsunaka
发明人： Katsumi Iyanagi , Shigeki Matsunaka
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/345 , H01J37/3408 , H01J37/3455
摘要： A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other.
摘要翻译：磁控管溅射装置包括真空室，靶和在真空室中彼此面对的基板保持器，设置在与设置基板保持器的位置相对的目标侧的磁控管，以及旋转机构，围绕垂直于靶的面的轴的磁控管。磁控管包括由扇形框架形成的内部磁体和由扇形框架形成的外部磁体，这些内部和外部磁体彼此具有不同的极性，外部磁体设置成围绕内部磁体留下间隙在内磁体和外磁体的弓形段之间以及内磁体和外磁体的直段之间的间隙，这些框架的宽度彼此基本相同。

4. 发明授权

US09103025B2 Magnetron sputtering apparatus and method of manufacturing semiconductor device 有权
标题翻译：磁控溅射装置及半导体装置的制造方法
公开(公告)号：US09103025B2
公开(公告)日：2015-08-11
申请号：US11859138
申请日：2007-09-21
申请人： Katsumi Iyanagi , Shigeki Matsunaka
发明人： Katsumi Iyanagi , Shigeki Matsunaka
IPC分类号： C23C14/00 , C25B11/00 , C25B13/00 , C23C14/35 , C23C14/04 , C23C14/06 , C23C14/16 , C23C14/34 , H01J37/34
CPC分类号： C23C14/35 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/345 , H01J37/3408 , H01J37/3455
摘要： A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other.
摘要翻译：磁控管溅射装置包括真空室，靶和在真空室中彼此面对的基板保持器，设置在与设置基板保持器的位置相对的目标侧的磁控管，以及旋转机构，围绕垂直于靶的面的轴的磁控管。磁控管包括由扇形框架形成的内部磁体和由扇形框架形成的外部磁体，这些内部和外部磁体彼此具有不同的极性，外部磁体设置成围绕内部磁体留下间隙在内磁体和外磁体的弓形段之间以及内磁体和外磁体的直段之间的间隙，这些框架的宽度彼此基本相同。

5. 发明申请

US20080242087A1 MAGNETRON SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：磁控溅射装置及制造半导体器件的方法
公开(公告)号：US20080242087A1
公开(公告)日：2008-10-02
申请号：US11858494
申请日：2007-09-20
申请人： Shigeki Matsunaka , Osamu Yamazaki
发明人： Shigeki Matsunaka , Osamu Yamazaki
IPC分类号： H01L21/44 , C23C14/35
CPC分类号： C23C14/35 , H01L21/2855 , H01L21/76843 , H01L21/76871
摘要： A magnetron sputtering apparatus includes: a target provided in a sputtering chamber; a susceptor opposed to the target; a high-frequency power supply connected to the susceptor; a plate provided outside the sputtering chamber and coaxial with a central axis of the target; a rotary motion mechanism configured to rotate the plate about the central axis; S-pole magnets placed on one side of the plate with their S-pole end directed to the target; and first and second N-pole magnets placed on the one side of the plate with their N-pole end directed to the target. The first N-pole magnets are placed along a circle coaxial with the plate and opposed to an outer peripheral vicinity of the target. The S-pole magnets are placed inside the first N-pole magnets and along a circle coaxial with the plate. The second N-pole magnets are placed inside the S-pole magnets and along a circle coaxial with the plate. Magnetic flux density of the first N-pole magnets and the second N-pole magnets are higher than magnetic flux density of the S-pole magnets.
摘要翻译：磁控溅射装置包括：设置在溅射室中的靶; 与目标相反的感受者; 连接到基座的高频电源; 设置在溅射室外部并与靶的中心轴同轴的板; 旋转运动机构，其构造成围绕所述中心轴线旋转所述板; 放置在板的一侧的S极磁体，其S极端指向目标; 并且第一和第二N极磁体放置在板的一侧，其N极端指向靶。第一N极磁体沿着与板同轴的圆形放置，并与靶的外周附近相对。 S极磁体放置在第一N极磁体内并沿着与板同轴的圆。第二N极磁体放置在S极磁体内并沿着与该板同轴的圆周。第一N极磁体和第二N极磁体的磁通密度高于S极磁体的磁通密度。

6. 发明授权

US06341042B1 Laser radiating apparatus and methods for manufacturing a polycrystalline semiconductor film and a liquid crystal display device 有权
标题翻译：激光辐射装置及多晶半导体膜的制造方法以及液晶显示装置
公开(公告)号：US06341042B1
公开(公告)日：2002-01-22
申请号：US09493066
申请日：2000-01-28
申请人： Shigeki Matsunaka , Atsushi Fujihara , Tsutomu Kakuno
发明人： Shigeki Matsunaka , Atsushi Fujihara , Tsutomu Kakuno
IPC分类号： G02B2710
CPC分类号： H01L21/268 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/0732 , B23K26/702 , G02F1/13454
摘要： A laser radiating apparatus controls an intensity of energy of a laser beam output from a laser generating device and radiates an object with the laser beam. The laser radiating apparatus includes an intensity homogenizer for substantially homogenizing distribution of the intensity of energy of the laser beam, an imaging lens for converging the laser beam substantially homogenized by the intensity homogenizer and radiating an object with the laser beam, a slit for removing a part of the converged laser beam and shaping it into a predetermined beam shape, a detector for detecting an intensity of energy of the part of the laser beam removed by the slit, and a control device for controlling the intensity of energy of the laser beam based on a detection signal output from the detector.
摘要翻译：激光照射装置控制从激光发生装置输出的激光束的能量强度，并用激光束照射物体。该激光辐射装置包括用于使激光束的能量强度分布基本上均匀的强度均化器，用于会聚由强度均化器基本均匀化的激光束并用激光束照射物体的成像透镜，会聚的激光束的一部分并将其成形为预定的波束形状，用于检测由狭缝去除的激光束的一部分的能量的强度的检测器，以及用于基于激光束的能量的控制强度的控制装置在从检测器输出的检测信号上。

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