专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09234280B2 Epitaxial growth apparatus and epitaxial growth method 有权
标题翻译：外延生长装置和外延生长法
公开(公告)号：US09234280B2
公开(公告)日：2016-01-12
申请号：US13445037
申请日：2012-04-12
申请人： Akihiko Shimizu , Fumihiko Kimura , Takeshi Masuda
发明人： Akihiko Shimizu , Fumihiko Kimura , Takeshi Masuda
IPC分类号： C23C16/00 , C23C16/458 , H01L21/687 , C30B25/12
CPC分类号： C23C16/4584 , C30B25/12 , H01L21/6875 , H01L21/68785
摘要： A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor.
摘要翻译：一种用于外延生长装置的基座支撑轴，其能够通过抑制由于基座的挠曲而导致的外延膜的面内电阻变化而形成高质量的外延膜，其中，基座支撑轴支撑基座的下部的基座在外延生长装置中。基座支撑轴包括与基座的中心大致同轴的支撑柱; 从所述支撑柱径向延伸到所述基座的周边部分下方的多个臂; 臂连接构件，其彼此相邻地连接臂的尖端; 以及从臂连接构件延伸的支撑销，从而支撑基座。

2. 发明申请

US20120285382A1 EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD 有权
标题翻译：外来生长装置和外来生长方法
公开(公告)号：US20120285382A1
公开(公告)日：2012-11-15
申请号：US13445037
申请日：2012-04-12
申请人： Akihiko Shimizu , Fumihiko Kimura , Takeshi Masuda
发明人： Akihiko Shimizu , Fumihiko Kimura , Takeshi Masuda
IPC分类号： C23C16/458
CPC分类号： C23C16/4584 , C30B25/12 , H01L21/6875 , H01L21/68785
摘要： A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor.
摘要翻译：一种用于外延生长装置的基座支撑轴，其能够通过抑制由于基座的挠曲而导致的外延膜的面内电阻变化而形成高质量的外延膜，其中，基座支撑轴支撑基座的下部的基座在外延生长装置中。基座支撑轴包括与基座的中心大致同轴的支撑柱; 从所述支撑柱径向延伸到所述基座的周边部分下方的多个臂; 臂连接构件，其彼此相邻地连接臂的尖端; 以及从臂连接构件延伸的支撑销，从而支撑基座。

3. 发明授权

US09273414B2 Epitaxial growth apparatus and epitaxial growth method 有权
标题翻译：外延生长装置和外延生长法
公开(公告)号：US09273414B2
公开(公告)日：2016-03-01
申请号：US12945299
申请日：2010-11-12
申请人： Fumihiko Kimura , Kazuhisa Iwanaga , Takeshi Masuda
发明人： Fumihiko Kimura , Kazuhisa Iwanaga , Takeshi Masuda
IPC分类号： C30B25/02 , C30B29/06 , C30B25/12
CPC分类号： C30B29/06 , C30B25/02 , C30B25/12
摘要： An object of the present invention is to provide an epitaxial growth apparatus and an epitaxial growth method that can suppress variation in in-face temperature of a semiconductor wafer caused by deflection of a susceptor and manufacture an epitaxial wafers of high quality. Specifically, the present invention provides an epitaxial growth apparatus for forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port for a treatment gas, the apparatus comprising: a susceptor for placing the semiconductor wafer thereon within the chamber; and a susceptor support shaft for supporting the susceptor at an underneath portion of the susceptor, wherein the susceptor support shaft has a support column located substantially coaxial with the center of the susceptor, and at least four support arms extending radially from the top end of the support column with equal intervals therebetween.
摘要翻译：本发明的目的是提供一种能够抑制由于感受器的偏转引起的半导体晶片的面内温度变化的外延生长装置和外延生长方法，并且制造高质量的外延晶片。具体地说，本发明提供了一种用于在放置在具有用于处理气体的供给口和排气口的室中的半导体晶片上形成外延膜的外延生长装置，该设备包括：用于将半导体晶片放置在其内的基座房间以及用于将基座支撑在基座的下部的基座支撑轴，其中，所述基座支撑轴具有与所述基座的中心基本同轴的支撑柱，以及从所述基座的顶端径向延伸的至少四个支撑臂支撑柱之间具有相等的间隔。

4. 发明申请

US20110114017A1 EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD 有权
标题翻译：外来生长装置和外来生长方法
公开(公告)号：US20110114017A1
公开(公告)日：2011-05-19
申请号：US12945299
申请日：2010-11-12
申请人： Fumihiko Kimura , Kazuhisa Iwanaga , Takeshi Masuda
发明人： Fumihiko Kimura , Kazuhisa Iwanaga , Takeshi Masuda
IPC分类号： C30B23/06 , C23C16/00
CPC分类号： C30B29/06 , C30B25/02 , C30B25/12
摘要： An object of the present invention is to provide an epitaxial growth apparatus and an epitaxial growth method that can suppress variation in in-face temperature of a semiconductor wafer caused by deflection of a susceptor and manufacture an epitaxial wafers of high quality. Specifically, the present invention provides an epitaxial growth apparatus for forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port for a treatment gas, the apparatus comprising: a susceptor for placing the semiconductor wafer thereon within the chamber; and a susceptor support shaft for supporting the susceptor at an underneath portion of the susceptor, wherein the susceptor support shaft has a support column located substantially coaxial with the center of the susceptor, and at least four support arms extending radially from the top end of the support column with equal intervals therebetween.
摘要翻译：本发明的目的是提供一种能够抑制由于感受器的偏转引起的半导体晶片的面内温度变化的外延生长装置和外延生长方法，并且制造高质量的外延晶片。具体地说，本发明提供了一种用于在放置在具有用于处理气体的供给口和排气口的室中的半导体晶片上形成外延膜的外延生长装置，该设备包括：用于将半导体晶片放置在其内的基座房间以及用于将基座支撑在基座的下部的基座支撑轴，其中，所述基座支撑轴具有与所述基座的中心基本同轴的支撑柱，以及从所述基座的顶端径向延伸的至少四个支撑臂支撑柱之间具有相等的间隔。

5. 发明授权

US5140020A Derivative of dihydroxybenzamide and a pharmaceutical composition thereof 失效
标题翻译：二羟基苯甲酰胺的衍生物及其药物组合物
公开(公告)号：US5140020A
公开(公告)日：1992-08-18
申请号：US719118
申请日：1991-06-20
申请人： Hitoshi Takita , Sakuo Noda , Yutaka Mukaida , Kazuyoshi Inada , Mari Toji , Fumihiko Kimura , Toyohiko Nitta , Kohju Watanabe , Kiyonori Umekawa , Hidetoshi Kobayashi
发明人： Hitoshi Takita , Sakuo Noda , Yutaka Mukaida , Kazuyoshi Inada , Mari Toji , Fumihiko Kimura , Toyohiko Nitta , Kohju Watanabe , Kiyonori Umekawa , Hidetoshi Kobayashi
IPC分类号： C07D213/75 , C07D295/192
CPC分类号： C07D213/75 , C07D295/192
摘要： Disclosed herein are a derivative of dihydroxybenzamide represented by the formula(I): ##STR1## wherein (1) R.sup.1 represents a hydrogen atom or a lower alkyl group and R.sup.2 represents a straight chain-alkyl group of 4 to 12 carbon atoms, a branched chain-alkyl group of 4 to 12 carbon atoms, a cyclo-alkyl group of 4 to 12 carbon atoms, ##STR2## wherein n is an integer of 1 to 6, or a pyridyl group which is substituted or unsubstituted, or (2) R.sup.1 and R.sup.2 are cyclized to make a heterocycle containing amino group represented by the formula ##STR3## wherein X represents a nitrogen atom or a methine and Y represents a hydrogen atom, an alkyl group of 1 to 6 carbon atoms or a phenyl group, and a pharmaceutical composition containing the same.
摘要翻译：本文公开了由式（I）表示的二羟基苯甲酰胺的衍生物：其中（1）R1表示氢原子或低级烷基，R2表示4-12个碳原子的直链烷基，支链 4〜12个碳原子的链状烷基，4〜12个碳原子的环烷基，其中n为1〜6的整数，或取代或未取代的吡啶基，或（2）使R1和R2环化以制备含有由式“IMAGE”表示的氨基的杂环，其中X表示氮原子或次甲基，Y表示氢原子，1至6个碳原子的烷基或苯基，含有该组合物的药物组合物。

6. 发明授权

US4758591A Dialkanoyloxybenzylidene dialkanoate 失效
公开(公告)号：US4758591A
公开(公告)日：1988-07-19
申请号：US681289
申请日：1984-12-13
申请人： Hitoshi Takita , Fumihiko Kimura , Sakuo Noda , Yutaka Mukaida , Toyohiko Nitta
发明人： Hitoshi Takita , Fumihiko Kimura , Sakuo Noda , Yutaka Mukaida , Toyohiko Nitta
IPC分类号： C07C67/08 , C07C69/035 , C07C69/21 , C07C69/33 , A61K31/225 , C07C69/00 , C09F5/08 , C09F7/10
CPC分类号： C07C69/21 , C07C67/08 , C07C69/33 , Y10S514/825 , Y10S514/886
摘要： Disclosed herein are dialkanoyloxybenzylidene dialkanoate represented by the formula, ##STR1## wherein X.sup.1 and X.sup.2 represent respectively alkanoyloxy group and a pharmaceutical composition in dosage unit form which comprises a dosage effective for the treatment of inflammatory disease of the dialkanoyloxybenzylidene dialkanoate as an active ingredient thereof.
摘要翻译：本文公开了由下式表示的二烷氧基亚苄基二链烷酸酯，其中X1和X2分别表示烷酰氧基和剂量单位形式的药物组合物，其包含有效治疗二烷酰氧基亚苄基二链烷酸酯的炎症性疾病作为其活性成分的剂量。

7. 发明授权

US07860592B2 Design method for industrial product using clothoid curve, industrial products designed by the design method, and method and device for numerical control using the clothoid curve 有权
标题翻译：使用回旋曲线的工业产品设计方法，设计方法设计的工业产品，使用回旋曲线进行数值控制的方法和装置
公开(公告)号：US07860592B2
公开(公告)日：2010-12-28
申请号：US10590704
申请日：2005-02-14
申请人： Fumihiko Kimura , Hiroshi Makino , Yoshikazu Matsuo
发明人： Fumihiko Kimura , Hiroshi Makino , Yoshikazu Matsuo
IPC分类号： G06F19/00
CPC分类号： G05B19/4103 , G05B2219/35146 , Y02P90/265
摘要： A trajectory of motion of the mechanical element is designed by using a three-dimensional curve, referred to as a three-dimensional clothoid curve, in which each of a pitch angle and a yaw angle in a tangential direction is given by a quadratic expression of a curve length or a curve length variable. A trajectory of a machine tool or a contour shape of a workpiece is expressed by using a three-dimensional curve, referred to as a three-dimensional clothoid curve, in which each of a pitch angle and a yaw angle in a tangential direction is given by a quadratic expression of a curve length or a curve length variable to control motion of the machine tool based on the three-dimensional curve.
摘要翻译：通过使用被称为三维回旋曲线的三维曲线来设计机械元件的运动轨迹，其中在切向方向上的俯仰角和偏航角中的每一个由二次表达式给出曲线长度或曲线长度变量。通过使用被称为三维回旋曲线的三维曲线来表示机床的工具轨迹或工件的轮廓形状，其中给出切向方向上的俯仰角和偏航角中的每一个通过曲线长度或曲线长度变量的二次表达式来基于三维曲线来控制机床的运动。

8. 发明授权

US5120835A Saccharide derivatives of protocatechualdehyde 失效
标题翻译：丙二酸二甲酯衍生物
公开(公告)号：US5120835A
公开(公告)日：1992-06-09
申请号：US555064
申请日：1990-07-18
申请人： Kazuyoshi Inada , Sakuo Noda , Fumihiko Kimura
发明人： Kazuyoshi Inada , Sakuo Noda , Fumihiko Kimura
IPC分类号： C07H9/04 , A61K31/70 , A61P29/00 , C07H15/04
CPC分类号： C07H15/04 , Y10S514/825
摘要： Novel saccharide derivatives of protocatechualdehyde represented by the general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a benzoyl group, and R.sup.2 represents an alkyl group.The method for preparing thereof and the use of the compound as antiinflammatory agents.

9. 发明授权

US4725598A Derivative of dihydroxybenzamide and a pharmaceutical composition having an anti-inflammatory activity 失效
标题翻译：二羟基苯甲酰胺的衍生物和具有抗炎活性的药物组合物
公开(公告)号：US4725598A
公开(公告)日：1988-02-16
申请号：US939241
申请日：1986-12-08
申请人： Hitoshi Takita , Sakuo Noda , Yutaka Mukaida , Kazuyoshi Inada , Mari Toji , Fumihiko Kimura , Toyohiko Nitta , Kohju Watanabe , Kiyonori Umekawa , Kobayashi, Hidetoshi
发明人： Hitoshi Takita , Sakuo Noda , Yutaka Mukaida , Kazuyoshi Inada , Mari Toji , Fumihiko Kimura , Toyohiko Nitta , Kohju Watanabe , Kiyonori Umekawa , Kobayashi, Hidetoshi
IPC分类号： C07D295/18 , A61K31/165 , A61K31/44 , A61K31/4402 , A61K31/445 , A61K31/495 , A61P7/02 , A61P29/00 , A61P37/06 , C07C67/00 , C07C231/00 , C07C235/44 , C07C235/46 , C07D213/00 , C07D213/75 , C07D295/192 , C07D211/04 , C07D241/04
CPC分类号： C07D213/75 , C07D295/192
摘要： Disclosed herein are a derivative of dihydroxybenzamide represented by the formula(I): ##STR1## wherein (1) R.sup.1 represents a hydrogen atom or a lower alkyl group and R.sup.2 represents a straight chain-alkyl group of 4 to 12 carbon atoms, a branched chain-alkyl group of 4 to 12 carbon atoms, a cyclo-alkyl group of 4 to 12 carbon atoms, ##STR2## wherein n is an integer of 1 to 6, or a pyridyl group which is substituted or unsubstituted, or (2) R.sup.1 and R.sup.2 are cyclized to make a heterocycle containing amino group represented by the formula ##STR3## wherein X represents a nitrogen atom or a methine and Y represents a hydrogen atom, an alkyl group of 1 to 6 carbon atoms or a phenyl group, and a pharmaceutical composition containing the same.
摘要翻译：本文公开了由式（I）表示的二羟基苯甲酰胺的衍生物：其中（1）R1表示氢原子或低级烷基，R2表示4-12个碳原子的直链烷基，支链 4〜12个碳原子的链状烷基，4〜12个碳原子的环烷基，其中n为1〜6的整数，或取代或未取代的吡啶基，或（2）使R1和R2环化以制备含有由式“IMAGE”表示的氨基的杂环，其中X表示氮原子或次甲基，Y表示氢原子，1至6个碳原子的烷基或苯基，含有该组合物的药物组合物。

10. 发明授权

US4561987A Lubricating agents for processing synthetic yarns and method of processing synthetic yarns therewith 失效
标题翻译：用于加工合成纱线的润滑剂及其加工合成纱线的方法
公开(公告)号：US4561987A
公开(公告)日：1985-12-31
申请号：US639852
申请日：1984-08-13
申请人： Hisao Yamamoto , Fumihiko Kimura , Osamu Ogiso
发明人： Hisao Yamamoto , Fumihiko Kimura , Osamu Ogiso
IPC分类号： D06M15/647 , D06M11/00
CPC分类号： D06M15/647
摘要： Lubricating agents (spin finish) of this invention for processing synthetic yarns contain 0.05 to 10 wt % of polyalkylene oxide modified polysiloxane of a specified form an 0.5 to 8 wt % of anionic surface active agent in addition to the base of a polyether compound derived from alkylene oxide with 2 to 4 carbon atoms. Such lubricating agents exhibit superior characteristics in the production of textured yarns regarding lubricity, cohesion of yarn, anti-static capabiity and heater-deposit resistance.
摘要翻译：用于加工合成纱线的本发明的润滑剂（旋涂）含有0.05至10重量％的指定形式的聚氧化亚烷基改性聚硅氧烷，除了衍生自以下的聚醚化合物的基础的0.5至8重量％的阴离子表面活性剂具有2至4个碳原子的环氧烷。关于润滑性，纱线内聚力，抗静电能力和耐热沉积性，这种润滑剂在变形纱的生产中表现出优异的特性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式