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1. 发明授权

US10714388B2 Method and apparatus for depositing cobalt in a feature 有权
公开(公告)号：US10714388B2
公开(公告)日：2020-07-14
申请号：US16222630
申请日：2018-12-17
申请人： APPLIED MATERIALS, INC.
发明人： Jin Hee Park , Tae Hong Ha , Sang-Hyeob Lee , Thomas Jongwan Kwon , Jaesoo Ahn , Xianmin Tang , Er-Xuan Ping , Sree Kesapragada
IPC分类号： H01L21/768 , H01L21/285 , C23C16/48 , C23C16/455 , C23C16/04 , C23C16/16 , C23C16/18 , C23C16/56 , H01L21/67 , H01L23/532 , H01L27/11556 , H01L27/11582
摘要： Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.

2. 发明授权

US10410864B2 Hybrid carbon hardmask for lateral hardmask recess reduction 有权
公开(公告)号：US10410864B2
公开(公告)日：2019-09-10
申请号：US15988830
申请日：2018-05-24
申请人： Applied Materials, Inc.
发明人： Thomas Jongwan Kwon , Rui Cheng , Abhijit Basu Mallick , Er-Xuan Ping , Jaesoo Ahn
IPC分类号： H01L21/033 , H01L21/3213 , H01L21/02 , H01L21/308 , H01L21/311 , H01L27/11582 , H01L49/02
摘要： Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks may be utilized in combination with patterning and etching processes to enable advanced device architectures. In one implementation, a first hardmask and a second hardmask disposed on a substrate having various material layers disposed thereon. The second hardmask may be utilized to pattern the first hardmask during a first etching process. A third hardmask may be deposited over the first and second hardmasks and a second etching process may be utilized to form channels in the material layers.

3. 发明申请

US20140273504A1 SELECTIVE DEPOSITION BY LIGHT EXPOSURE 审中-公开
标题翻译：选择性沉积由光照曝光
公开(公告)号：US20140273504A1
公开(公告)日：2014-09-18
申请号：US13838960
申请日：2013-03-15
申请人： APPLIED MATERIALS, INC.
发明人： Aneesh Nainani , Joseph Johnson , Er-Xuan Ping , Adam Brand , Mathew Abraham
IPC分类号： H01L21/02 , H01L21/285
CPC分类号： H01L21/02277 , C23C16/047 , C23C16/405 , C23C16/45525 , C23C16/482 , C23C16/505 , H01L21/02181 , H01L21/02274 , H01L21/28194 , H01L21/28562 , H01L21/76849 , H01L21/76879 , H01L29/517 , H01L29/66545
摘要： A substrate processing chamber comprising a chamber wall enclosing a process zone having an exhaust port, a substrate support to support a substrate in the process zone, a gas distributor for providing a deposition gas to the process zone, a solid state light source capable of irradiating substantially the entire surface of the substrate with light, and a gas energizer for energizing the deposition gas.
摘要翻译：一种衬底处理室，包括一个封闭一个具有排气口的工艺区域的腔室壁，一个用于在工艺区域中支撑衬底的衬底支撑件，一个用于向工艺区域提供沉积气体的气体分配器，能够照射基本上具有光的基板的整个表面，以及用于激发沉积气体的气体激发器。

4. 发明授权

US10879177B2 PVD deposition and anneal of multi-layer metal-dielectric film 有权
公开(公告)号：US10879177B2
公开(公告)日：2020-12-29
申请号：US14745367
申请日：2015-06-19
申请人： Applied Materials, Inc.
发明人： Minrui Yu , Kai Ma , Thomas Kwon , Kaushal K. Singh , Er-Xuan Ping
IPC分类号： H01L23/532 , C23C28/00 , H01L21/768 , C23C14/06 , C23C16/40
CPC分类号： H01L23/53266 , C23C28/322 , C23C28/34 , C23C28/345 , H01L21/76838 , C23C14/0641 , C23C16/401
摘要： The present disclosure provides a film stack structure formed on a substrate and methods for forming the film stack structure on the substrate. In one embodiment, the method for forming a film stack structure on a substrate includes depositing a first adhesion layer on an oxide layer formed on the substrate and depositing a metal layer on the first adhesion layer, wherein the first adhesion layer and the metal layer form a stress neutral structure.

5. 发明授权

US10943779B2 Method and system for three-dimensional (3D) structure fill 有权
公开(公告)号：US10943779B2
公开(公告)日：2021-03-09
申请号：US15356475
申请日：2016-11-18
申请人： APPLIED MATERIALS, INC.
发明人： Ellie Yieh , Ludovic Godet , Srinivas Nemani , Er-Xuan Ping , Gary Dickerson
IPC分类号： H01L21/00 , H01L21/02 , H01L21/67 , C23C14/02 , C23C14/04 , C23C16/02 , C23C16/04 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/285 , H01L21/311 , H01L21/3213
摘要： Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and an untreated bottom of the trench. A material is deposited in the trench. The deposition rate of the material on the treated portion of the sidewall is different than a second deposition rate on the untreated bottom of the trench. In one embodiment, a method includes depositing a material on the wafer, filling a bottom of the trench and forming a layer on a sidewall of the trench and a top surface adjacent to the trench. The method includes etching the layer with an ion beam at an angle with respect to the sidewall.

6. 发明授权

US10700087B2 Multi-layer stacks for 3D NAND extendibility 有权
公开(公告)号：US10700087B2
公开(公告)日：2020-06-30
申请号：US16151467
申请日：2018-10-04
申请人： Applied Materials, Inc.
发明人： Xinhai Han , Deenesh Padhi , Er-Xuan Ping , Srinivas Guggilla
IPC分类号： H01L21/76 , H01L27/11582 , H01L21/311 , H01L21/02 , H01L27/1157
摘要： Embodiments described herein relate to methods and materials for fabricating semiconductor devices, such as memory devices and the like. In one embodiment, a memory layer stack includes materials having differing etch rates in which one material is selectively removed to form an airgap in the device structure. In another embodiment, silicon containing materials of a memory layer stack are doped or fabricated as a silicide material. In another embodiment, a silicon nitride material is utilized as an interfacial layer between oxide containing and silicon containing layers of a memory layer stack.

7. 发明授权

US10157787B2 Method and apparatus for depositing cobalt in a feature 有权
公开(公告)号：US10157787B2
公开(公告)日：2018-12-18
申请号：US15384219
申请日：2016-12-19
申请人： APPLIED MATERIALS, INC.
发明人： Jin Hee Park , Tae Hong Ha , Sang-Hyeob Lee , Thomas Jongwan Kwon , Jaesoo Ahn , Xianmin Tang , Er-Xuan Ping , Sree Kesapragada
IPC分类号： H01L21/768 , H01L21/285 , C23C16/48 , C23C16/455 , C23C16/04 , C23C16/16 , C23C16/18 , C23C16/56 , H01L21/67 , H01L23/532 , H01L27/11556 , H01L27/11582
摘要： Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.

8. 发明授权

US09812328B2 Methods for forming low resistivity interconnects 有权
公开(公告)号：US09812328B2
公开(公告)日：2017-11-07
申请号：US15189768
申请日：2016-06-22
申请人： Applied Materials, Inc.
发明人： Kaushal K. Singh , Er-Xuan Ping , Xianmin Tang , Sundar Ramamurthy , Randhir Thakur
IPC分类号： H01L21/4763 , H01L21/285 , H01L23/485 , H01L23/532
CPC分类号： H01L21/28518 , H01L23/485 , H01L23/53209 , H01L23/53219
摘要： Embodiments described herein generally relate to methods for forming silicide materials. Silicide materials formed according to the embodiments described herein may be utilized as contact and/or interconnect structures and may provide advantages over conventional silicide formation methods. In one embodiment, a one or more transition metal and aluminum layers may be deposited on a silicon containing substrate and a transition metal layer may be deposited on the one or more transition metal and aluminum layers. An annealing process may be performed to form a metal silicide material.

9. 发明授权

US09570307B2 Methods of doping substrates with ALD 有权
标题翻译：使用ALD掺杂底物的方法
公开(公告)号：US09570307B2
公开(公告)日：2017-02-14
申请号：US14939403
申请日：2015-11-12
申请人： Applied Materials, Inc.
发明人： Aneesh Nainani , Mathew Abraham , Er-Xuan Ping
IPC分类号： H01L21/22 , H01L21/225 , H01L29/66 , H01L21/02
CPC分类号： H01L21/225 , H01L21/02271 , H01L21/02362 , H01L21/02499 , H01L21/0262 , H01L21/2254 , H01L29/66803
摘要： Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.
摘要翻译：提供掺杂衬底和制造掺杂半导体特征的方法。一种示例性方法包括提供具有至少一个具有纵横比的特征的基底; 在衬底上沉积掺杂剂层，掺杂剂层具有符合至少一个特征的形状。介电层沉积在掺杂剂层上，电介质层具有符合掺杂剂层的形状。将介电层退火以将掺杂剂扩散到衬底中。

10. 发明授权

US09011973B2 Methods for depositing oxygen deficient metal films 有权
标题翻译：沉积缺氧金属膜的方法
公开(公告)号：US09011973B2
公开(公告)日：2015-04-21
申请号：US13934486
申请日：2013-07-03
申请人： Applied Materials, Inc.
发明人： Schubert Chu , Er-Xuan Ping , Yoshihide Senzaki
IPC分类号： C23C16/40 , C23C16/06 , C23C16/455 , C23C28/00
CPC分类号： C23C16/06 , C23C16/40 , C23C16/45529 , C23C28/00 , C23C28/042 , C23C28/048 , C23C28/42 , C23C28/44
摘要： Methods of depositing an oxygen deficient metal film by chemical reaction of at least one precursor having a predetermined oxygen deficiency on a substrate. An exemplary method includes, during a metal oxide deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an oxygen reactant gas comprising oxygen to form a layer containing a metal oxide on the substrate. During an oxygen deficient deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an additional reactant gas excluding oxygen to form a second layer at least one of a metal nitride and a mixed metal on the substrate during a second cycle, the second layer being oxygen deficient relative to the layer containing the metal oxide; and repeating the metal oxide deposition cycle and the oxygen deficient deposition cycle to form the oxygen deficient film having the predetermined oxygen deficiency.
摘要翻译：通过具有预定氧缺乏的至少一种前体在基材上的化学反应沉积缺氧金属膜的方法。一种示例性方法包括在金属氧化物沉积循环期间，将衬底暴露于包含金属的金属反应物气体和包含氧的氧反应气体，以在衬底上形成含有金属氧化物的层。在缺氧沉积循环期间，将基底暴露于包含金属和除氧之外的附加反应物气体的金属反应物气体，以在第二循环期间在基板上形成第二层金属氮化物和混合金属中的至少一种，第二层相对于含有金属氧化物的层是缺氧的; 并且重复金属氧化物沉积循环和缺氧沉积循环以形成具有预定缺氧的缺氧膜。

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