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1. 发明授权

US06507065B2 Doped silicon structure with impression image on opposing roughened surfaces 失效
标题翻译：在相对的粗糙表面上具有印模图像的掺杂硅结构
公开(公告)号：US06507065B2
公开(公告)日：2003-01-14
申请号：US09897258
申请日：2001-07-02
申请人： Thomas A. Figura , Zhiquiang Wu , Li Li
发明人： Thomas A. Figura , Zhiquiang Wu , Li Li
IPC分类号： H01L27108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/82 , H01L28/84 , H01L28/86 , H01L28/90 , Y10S438/964
摘要： A silicon structure is formed that includes a free-standing wall having opposing roughen ed inner and outer surfaces using ion implantation and an unplanted silicon etching process which is selective to implanted silicon. In general, the method provides a recess in a layer of insulating material into which a polysilicon layer is formed. A layer of HSG or CSG polysilicon is subsequently formed on the polysilicon layer, after which ions are implanted into both the layer of HSG or CSG polysilicon and the underlying polysilicon layer. The aforementioned selective etching process is then conducted to result in a relatively unplanted portion being etched away and a highly implanted portion being left standing to form the free-standing wall. The free-standing wall has an inner surface that is roughen ed by the layer of HSG or CSG polysilicon. The free-standing wall also has a roughen ed outer surface to which has been transferred a near-impression image topography of the opposing inner surface.
摘要翻译：形成硅结构，其包括使用离子注入的具有相对粗糙的内表面和外表面的独立壁和对植入硅有选择性的未用硅蚀刻工艺。通常，该方法在其中形成多晶硅层的绝缘材料层中提供凹部。随后在多晶硅层上形成一层HSG或CSG多晶硅，然后将离子注入HSG或CSG多晶硅层以及下层多晶硅层。然后进行上述选择性蚀刻工艺，导致相对未被注入的部分被蚀刻掉，并且高度注入的部分被静置以形成自立壁。独立式墙体的内表面由HSG或CSG多晶硅层粗糙化。独立的墙壁还具有粗糙的外表面，已经转移到相对的内表面的近印象图像形貌。

2. 发明授权

US06756627B1 Container capacitor 失效
标题翻译：集装箱电容器
公开(公告)号：US06756627B1
公开(公告)日：2004-06-29
申请号：US09033290
申请日：1998-03-02
申请人： Zhiquiang Wu , Li Li , Kunal Parekh
发明人： Zhiquiang Wu , Li Li , Kunal Parekh
IPC分类号： H01L27108
CPC分类号： H01L27/1085 , H01L27/10817 , H01L28/82 , H01L28/84 , H01L28/90
摘要： A method of the present invention forms a vertically oriented structure connected with a source/drain region through open space. In one embodiment of the method wherein a capacitor storage node is formed, the open space is located between two word line gate stacks in a MOS DRAM memory circuit. A thin landing pad is formed of conducting material in the open space extending to the source/drain region and over the tops of the gate stacks. An insulating layer is formed over the gate stacks and the landing pad. A recess is etched down through the insulating layer to expose an annular portion of the landing pad. A volume of the insulating material is left upon the landing pad in the open space. A conductive layer is deposited in the recess making contact with the exposed annular portion of the landing pad. A dry etching process is used to remove a segment of the conductive layer formed over the volume of insulating material upon the landing pad, after which the volume of insulating material upon the landing pad is removed. Remaining is a storage node made upon of a continuous layer of conductive material that lines the recess and the open space. A dielectric layer and a cell plate are in one embodiment formed over the continuous layer of conducting material so as to extend down into the open space, thus completing a container capacitor.
摘要翻译：本发明的方法形成了通过开放空间与源/漏区连接的垂直定向结构。在其中形成电容器存储节点的方法的一个实施例中，开放空间位于MOS DRAM存储器电路中的两个字线栅极叠层之间。薄的着陆板由导电材料形成，该导电材料在延伸到源极/漏极区域以及栅极堆叠顶部的开放空间中。绝缘层形成在栅极叠层和着陆焊盘上。通过绝缘层向下蚀刻凹陷以暴露着陆垫的环形部分。绝缘材料的体积留在开放空间中的着陆垫上。导电层沉积在与着陆焊盘暴露的环形部分接触的凹部中。使用干蚀刻工艺去除在着陆焊盘上形成在绝缘材料体积上的导电层的段，之后移除着陆焊盘上的绝缘材料的体积。剩余的是由连续的导电材料层制成的存储节点，其导引凹槽和开放空间。在一个实施例中，在导电材料的连续层上形成电介质层和电池板，以便向下延伸到开放空间中，从而完成容器电容器。

3. 发明授权

US06255687B1 Doped silicon structure with impression image on opposing roughened surfaces 失效
标题翻译：在相对的粗糙表面上具有印模图像的掺杂硅结构
公开(公告)号：US06255687B1
公开(公告)日：2001-07-03
申请号：US09407335
申请日：1999-09-29
申请人： Thomas A. Figura , Zhiquiang Wu , Li Li
发明人： Thomas A. Figura , Zhiquiang Wu , Li Li
IPC分类号： H01L27108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/82 , H01L28/84 , H01L28/86 , H01L28/90 , Y10S438/964
摘要： A silicon structure is formed that includes a free-standing wall having opposing roughened inner and outer surfaces using ion implantation and an unimplanted silicon etching process which is selective to implanted silicon. In general, the method provides a recess in a layer of insulating material into which a polysilicon layer is formed. A layer of HSG or CSG polysilicon is subsequently formed on the polysilicon layer, after which ions are implanted into both the layer of HSG or CSG polysilicon and the underlying polysilicon layer. The aforementioned selective etching process is then conducted to result in a relatively unimplanted portion being etched away and a highly implanted portion being left standing to form the free-standing wall. The free-standing wall has an inner surface that is roughened by the layer of HSG or CSG polysilicon. The free-standing wall also has a roughened outer surface to which has been transferred a near-impression image topography of the opposing inner surface. The near-impression image topography of the outer and inner surfaces are due to the grains of the layer of HSG or CSG polysilicon which, during ion implantation and selective etching, transfer the topography of the inner surface to the outer surface so as to also roughened the outer surface. One preferred etching process uses an etchant comprising a selected volume of tetramethyl ammonium hydroxide in solution, which etches unimplanted silicon up to 60 times faster than implanted silicon. A capacitor storage node formed with the method has an increased surface area electrically connected with an underlying silicon substrate.
摘要翻译：形成硅结构，其包括使用离子注入的具有相对粗糙的内表面和外表面的独立壁，以及对植入的硅有选择性的未被注入的硅蚀刻工艺。通常，该方法在其中形成多晶硅层的绝缘材料层中提供凹部。随后在多晶硅层上形成一层HSG或CSG多晶硅，然后将离子注入HSG或CSG多晶硅层以及下层多晶硅层。然后进行上述选择性蚀刻工艺，导致相对未被注入的部分被蚀刻掉，并且高度注入的部分被静置以形成自立壁。自立壁的内表面被HSG或CSG多晶硅层粗糙化。独立的墙壁还具有粗糙的外表面，其已经转移到相对的内表面的近印象图像形貌。外表面和内表面的近印象图像形貌是由于HSG或CSG多晶硅层的晶粒，其在离子注入和选择性蚀刻期间将内表面的形貌转移到外表面以便也被粗糙化外表面。一种优选的蚀刻方法使用包含选定体积的四甲基氢氧化铵在溶液中的蚀刻剂，其蚀刻非植入硅比注入的硅快60倍。用该方法形成的电容器存储节点具有与下面的硅衬底电连接的增加的表面积。

4. 发明授权

US5963804A Method of making a doped silicon structure with impression image on opposing roughened surfaces 失效
标题翻译：在相对的粗糙表面上制造具有印模图像的掺杂硅结构的方法
公开(公告)号：US5963804A
公开(公告)日：1999-10-05
申请号：US818229
申请日：1997-03-14
申请人： Thomas A. Figura , Zhiquiang Wu , Li Li
发明人： Thomas A. Figura , Zhiquiang Wu , Li Li
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/82 , H01L28/84 , H01L28/86 , H01L28/90 , Y10S438/964
摘要： A silicon structure is formed that includes a free-standing wall having opposing roughened inner and outer surfaces using ion implantation and an unimplanted silicon etching process which is selective to implanted silicon. In general, the method provides a recess in a layer of insulating material into which a polysilicon layer is formed. A layer of HSG or CSG polysilicon is subsequently formed on the polysilicon layer, after which ions are implanted into both the layer of HSG or CSG polysilicon and the underlying polysilicon layer. The aforementioned selective etching process is then conducted to result in a relatively unimplanted portion being etched away and a highly implanted portion being left standing to form the free-standing wall. The free-standing wall has an inner surface that is roughened by the layer of HSG or CSG polysilicon. The free-standing wall also has a roughened outer surface to which has been transferred a near-impression image topography of the opposing inner surface. The near-impression image topography of the outer and inner surfaces are due to the grains of the layer of HSG or CSG polysilicon which, during ion implantation and selective etching, transfer the topography of the inner surface to the outer surface so as to also roughened the outer surface. One preferred etching process uses an etchant comprising a selected volume of tetramethyl ammonium hydroxide in solution, which etches unimplanted silicon up to 60 times faster than implanted silicon. A capacitor storage node formed with the method has an increased surface area electrically connected with an underlying silicon substrate.
摘要翻译：形成硅结构，其包括使用离子注入的具有相对粗糙的内表面和外表面的独立壁，以及对植入的硅有选择性的未被注入的硅蚀刻工艺。通常，该方法在其中形成多晶硅层的绝缘材料层中提供凹部。随后在多晶硅层上形成一层HSG或CSG多晶硅，然后将离子注入HSG或CSG多晶硅层以及下层多晶硅层。然后进行上述选择性蚀刻工艺，导致相对未被注入的部分被蚀刻掉，并且高度注入的部分被静置以形成自立壁。自立壁的内表面被HSG或CSG多晶硅层粗糙化。独立的墙壁还具有粗糙的外表面，其已经转移到相对的内表面的近印象图像形貌。外表面和内表面的近印象图像形貌是由于HSG或CSG多晶硅层的晶粒，其在离子注入和选择性蚀刻期间将内表面的形貌转移到外表面以便也被粗糙化外表面。一种优选的蚀刻方法使用包含选定体积的四甲基氢氧化铵在溶液中的蚀刻剂，其蚀刻非植入硅比注入的硅快60倍。用该方法形成的电容器存储节点具有与下面的硅衬底电连接的增加的表面积。

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