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    • 3. 发明申请
    • METHOD OF PRODUCING COMPOUND NANORODS AND THIN FILMS
    • 生产化合物和薄膜的方法
    • US20100209700A1
    • 2010-08-19
    • US12773104
    • 2010-05-04
    • Bing LIUZhengong HUYong CHE
    • Bing LIUZhengong HUYong CHE
    • B32B5/30C23C16/00
    • C23C14/086C23C14/28C30B23/00C30B29/16C30B29/60Y10T428/25
    • A method of producing compound nanorods and thin films under a controlled growth mode is described. The method involves ablating compound targets using an ultrafast pulsed laser and depositing the ablated materials onto a substrate. When producing compound nanorods, external catalysts such as pre-deposited metal nanoparticles are not involved. Instead, at the beginning of deposition, simply by varying the fluence at the focal spot on the target, a self-formed seed layer can be introduced for nanorods growth. This provides a simple method of producing high purity nanorods and controlling the growth mode. Three growth modes are covered by the present invention, including nanorod growth, thin film growth, and nano-porous film growth.
    • 描述了在受控生长模式下制备复合纳米棒和薄膜的方法。 该方法包括使用超快速脉冲激光烧蚀化合物靶,并将消融材料沉积在基底上。 当制备复合纳米棒时,不涉及外部催化剂如预沉积的金属纳米颗粒。 相反,在沉积开始时,简单地通过改变目标上焦点处的注量,可以引入自形晶种层用于纳米棒生长。 这提供了生产高纯度纳米棒并控制生长模式的简单方法。 本发明涵盖三种生长方式,包括纳米棒生长,薄膜生长和纳米多孔膜生长。
    • 4. 发明申请
    • METHOD OF PRODUCING COMPOUND NANORODS AND THIN FILMS
    • 生产化合物和薄膜的方法
    • US20120148756A1
    • 2012-06-14
    • US12823584
    • 2010-06-25
    • Bing LIUZhengong HUYong CHE
    • Bing LIUZhengong HUYong CHE
    • C23C16/02B82Y40/00
    • C23C14/086C23C14/28C30B23/00C30B29/16C30B29/60Y10T428/25
    • A method of producing compound nanorods and thin films under a controlled growth mode is described. The method involves ablating compound targets using an ultrafast pulsed laser and depositing the ablated materials onto a substrate. When producing compound nanorods, external catalysts such as pre-deposited metal nanoparticles are not involved. Instead, at the beginning of deposition, simply by varying the fluence at the focal spot on the target, a self-formed seed layer can be introduced for nanorods growth. This provides a simple method of producing high purity nanorods and controlling the growth mode. Three growth modes are covered by the present invention, including nanorod growth, thin film growth, and nano-porous film growth.
    • 描述了在受控生长模式下制备复合纳米棒和薄膜的方法。 该方法包括使用超快速脉冲激光烧蚀化合物靶,并将消融材料沉积在基底上。 当制备复合纳米棒时,不涉及外部催化剂如预沉积的金属纳米颗粒。 相反,在沉积开始时,简单地通过改变目标上焦点处的注量,可以引入自形晶种层用于纳米棒生长。 这提供了生产高纯度纳米棒并控制生长模式的简单方法。 本发明涵盖三种生长方式,包括纳米棒生长,薄膜生长和纳米多孔膜生长。