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    • 5. 发明授权
    • Process for producing aluminum-based composite member
    • 铝基复合构件的制造方法
    • US6006819A
    • 1999-12-28
    • US44517
    • 1998-03-19
    • Hideo ShimizuTsunehisa HataYusuke ToyodaTakeo ItouNorito SuzukiKatuya Nagase
    • Hideo ShimizuTsunehisa HataYusuke ToyodaTakeo ItouNorito SuzukiKatuya Nagase
    • B22D19/00B22D19/08B22D19/04B22D19/16
    • B22D19/00
    • An aluminum-based composite member having an increased strength of bond between an aluminum-based body and a cast iron material portion which is incorporated into the aluminum-based body by casting is provided by an improved process. The following steps are employed in the process: a step of removing an oxide film on the surface of the cast iron material portion and activating such surface; a step of forming a protecting plated-layer having a thickness a in a range of 0.8 .mu.m.ltoreq.a.ltoreq.5 .mu.m on the surface of the cast iron material portion; a step of preheating the cast iron material portion in a reducing gas atmosphere and reducing an oxide on the surface of the protecting plated-layer; a step of vanishing the protecting plated-layer by a diffusing phenomenon and forming an aluminum-based alloy plated layer on the surface of the cast iron material portion by immersing the cast iron material portion into a molten aluminum-based alloy; a step of quenching the cast iron material portion in an inert gas atmosphere; and a step of incorporating the cast iron material portion into the aluminum-based body by casting.
    • 通过改进的方法提供了通过铸造而结合到铝基体中的铝基体和铸铁材料部分之间的结合强度增加的铝基复合构件。 在该方法中采用以下步骤:去除铸铁材料部分表面上的氧化膜并活化该表面的步骤; 在铸铁材料部分的表面上形成厚度a在0.8μm≤5μm范围内的保护电镀层的步骤; 在还原气体气氛中预热铸铁材料部分并还原保护镀层表面上的氧化物的步骤; 通过漫射现象消除保护电镀层的步骤,并且通过将铸铁材料部分浸入熔融的铝基合金中,在铸铁材料部分的表面上形成铝基合金镀层; 在惰性气体气氛中淬火铸铁材料部分的步骤; 以及通过铸造将铸铁材料部分结合到铝基体中的步骤。
    • 9. 发明申请
    • Group III nitride-based compound semiconductor light-emitting device and method for producing the same
    • III族氮化物系化合物半导体发光元件及其制造方法
    • US20060169990A1
    • 2006-08-03
    • US11340746
    • 2006-01-27
    • Tetsuya TakiMitsuhisa NarukawaMasato AokiKoji OkunoYusuke ToyodaKazuki NishijimaShuhei Yamada
    • Tetsuya TakiMitsuhisa NarukawaMasato AokiKoji OkunoYusuke ToyodaKazuki NishijimaShuhei Yamada
    • H01L33/00
    • H01L33/32B82Y20/00H01L33/06
    • The invention relates to a Group III nitride-based compound semiconductor light-emitting device having a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer, wherein the first and second regions are formed such that the lattice constants of the first and second layers approach the lattice constant of the well layer. The invention also relates to a method for producing a Group III nitride-based compound semiconductor light-emitting device having a light-emitting layer of a single or multiple quantum well structure including at least an indium (In)-containing well layer, wherein, during formation of the well layer through vapor growth, an In source is fed through a procedure including: initiating feeding of the In source at a minimum feed rate; subsequently, elevating the In source feed rate to a target feed rate; maintaining the feed rate at the target feed rate; and subsequently, lowering the feed rate from the target feed rate to the minimum feed rate, and a Group III source other than the In source is fed at a constant feed rate from initiation of feeding of the In source to termination of the feeding.
    • 本发明涉及具有阱层的III族氮化物系化合物半导体发光元件,在阱层的一个表面上形成的第一层,在阱层的另一个表面上形成的第二层, 在第一层和阱层之间的界面附近,以及设置在第二层和阱层之间的界面附近的第二区域,其中形成第一和第二区域,使得第 第一层和第二层接近阱层的晶格常数。 本发明还涉及一种具有至少包含含铟(In)的阱层的单个或多个量子阱结构的发光层的III族氮化物基化合物半导体发光器件的制造方法,其中, 在通过气相生长形成井层期间,通过包括以下最小进料速率开始进料In源的过程进料In源。 随后将In源进料速率提高到目标进料速率; 将进料速率保持在目标进料速率; 并且随后将进料速率从目标进料速率降低到最小进料速率,并且从In源的进料开始到进料终止,以恒定进料速率进料除了In源之外的III族源。
    • 10. 发明授权
    • Slide surface construction and process for producing the same
    • 滑动面施工及其生产工艺
    • US5897968A
    • 1999-04-27
    • US616874
    • 1996-03-15
    • Kenji DosakaYusuke ToyodaMasamune TabataHiroshi Koinuma
    • Kenji DosakaYusuke ToyodaMasamune TabataHiroshi Koinuma
    • F16C9/04F16C33/12F16H55/06B32B15/18
    • F16H55/06F16C33/12F16C33/122F16C9/04F05C2201/021F05C2201/0448F16C2204/60Y10S384/912Y10S428/935Y10T428/12493Y10T428/12951Y10T428/12993
    • A slide surface construction of a slide bearing is formed of an aggregate of two different metal crystals. The sliding condition of a first region of the slide bearing is more severe than that of a second region. The (2hhh) oriented metal crystals having a body-centered cubic structure with their (2hhh) planes (by Miller indices) oriented toward a slide surface exist in the first region. The content S.sub.2hhh of the (2hhh) oriented metal crystals is set in a range of S.sub.2hhh .gtoreq.20%. These crystals have a high hardness and are in the form of fish-like metal crystals in the slide surface and hence, an aggregate of these metal crystals has a good oil retention. The (hhh) oriented metal crystals having a body-centered cubic structure with their (hhh) planes (by Miller indices) oriented toward a slide surface exist in the second region. The content S.sub.hhh of the (hhh) oriented metal crystals is set in a range of S.sub.hhh .gtoreq.40%. These crystals are in the form of hexagonal pyramid-shaped metal crystals and hence, an aggregate of these metal crystals has a good oil retention. Thus, it is possible for the two regions with different sliding conditions to exhibit an excellent sliding characteristic.
    • 滑动轴承的滑动表面结构由两种不同的金属晶体的聚集体形成。 滑动轴承的第一区域的滑动状态比第二区域的滑动状态更严重。 在第一区域中存在具有以体积为中心的立方结构的(2hhh)取向金属晶体及其朝向滑动表面的(2hhh)平面(通过米勒指数)。 (2hhh)取向金属晶体的含量S2hhh设定在S2hhh≥20%的范围内。 这些晶体具有高硬度并且在滑动表面中呈鱼状金属晶体的形式,因此这些金属晶体的聚集体具有良好的保油性。 在第二区域中存在具有以体积为中心的立方结构的(hhh)取向金属晶体及其(hhh)面(通过米勒指数)朝向滑动面。 (hhh)取向金属晶体的含量Shhh设定在Shhh≥40%的范围内。 这些晶体呈六角锥形金属晶体的形式,因此这些金属晶体的聚集体具有良好的保油性。 因此,具有不同滑动条件的两个区域可以表现出优异的滑动特性。