专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07952049B2 Method for multi-step temperature control of a substrate 有权
标题翻译：基板多步温度控制方法
公开(公告)号：US07952049B2
公开(公告)日：2011-05-31
申请号：US11929288
申请日：2007-10-30
申请人： Yuji Tsukamoto
发明人： Yuji Tsukamoto
IPC分类号： B23K10/00
CPC分类号： H01L21/67103 , H01L21/67109
摘要： A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of said substrate, setting the substrate support to a first support temperature corresponding to said first processing temperature of said substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of said substrate, and setting the substrate support to a second support temperature corresponding to said second processing temperature of said substrate.
摘要翻译：在衬底处理期间改变衬底的温度的方法包括在衬底保持器上设置衬底，衬底保持器包括用于支撑衬底的温度控制的衬底支撑件，用于支撑衬底支撑件的温度受控的底座支撑件和热介于温度控制的基板支架和温度控制的基座支架之间的绝缘体。该方法还包括将基座支撑件的温度设定为与所述基板的第一处理温度相对应的第一基座温度，将基板支撑件设置为对应于所述基板的所述第一处理温度的第一支撑温度，基底支撑件对应于所述基板的第二处理温度的第二基板温度，以及将所述基板支撑件设置为对应于所述基板的所述第二处理温度的第二支撑温度。

2. 发明授权

US07723648B2 Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system 有权
标题翻译：用于基板处理系统的具有不均匀绝缘层的温度控制基板支架
公开(公告)号：US07723648B2
公开(公告)日：2010-05-25
申请号：US11525815
申请日：2006-09-25
申请人： Yuji Tsukamoto , Eric J. Strang
发明人： Yuji Tsukamoto , Eric J. Strang
IPC分类号： H05B3/68 , F27B5/14
CPC分类号： F27D5/0037 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67103
摘要： A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.
摘要翻译：用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。热绝缘体包括通过温度控制的支撑基底和基底支撑件之间的热绝缘体的传热系数（W / m 2 -K）的不均匀的空间变化。

3. 发明申请

US20080073335A1 METHOD FOR MULTI-STEP TEMPERATURE CONTROL OF A SUBSTRATE 有权
标题翻译：一种基板多级温度控制方法
公开(公告)号：US20080073335A1
公开(公告)日：2008-03-27
申请号：US11929288
申请日：2007-10-30
申请人： Yuji TSUKAMOTO
发明人： Yuji TSUKAMOTO
IPC分类号： H05B3/20
CPC分类号： H01L21/67103 , H01L21/67109
摘要： A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of said substrate, setting the substrate support to a first support temperature corresponding to said first processing temperature of said substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of said substrate, and setting the substrate support to a second support temperature corresponding to said second processing temperature of said substrate.
摘要翻译：在衬底处理期间改变衬底的温度的方法包括在衬底保持器上设置衬底，衬底保持器包括用于支撑衬底的温度控制的衬底支撑件，用于支撑衬底支撑件的温度受控的底座支撑件和热介于温度控制的基板支架和温度控制的基座支架之间的绝缘体。该方法还包括将基座支撑件的温度设定为与所述基板的第一处理温度相对应的第一基座温度，将基板支撑件设置为对应于所述基板的所述第一处理温度的第一支撑温度，基底支撑件对应于所述基板的第二处理温度的第二基板温度，以及将所述基板支撑件设置为对应于所述基板的所述第二处理温度的第二支撑温度。

4. 发明授权

US07297894B1 Method for multi-step temperature control of a substrate 有权
标题翻译：基板多步温度控制方法
公开(公告)号：US07297894B1
公开(公告)日：2007-11-20
申请号：US11526119
申请日：2006-09-25
申请人： Yuji Tsukamoto
发明人： Yuji Tsukamoto
IPC分类号： B23K10/00
CPC分类号： H01L21/67103 , H01L21/67109
摘要： A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of the substrate, setting the substrate support to a first support temperature corresponding to the first processing temperature of the substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of the substrate, and setting the substrate support to a second support temperature corresponding to the second processing temperature of the substrate.
摘要翻译：在衬底处理期间改变衬底的温度的方法包括在衬底保持器上设置衬底，衬底保持器包括用于支撑衬底的温度控制的衬底支撑件，用于支撑衬底支撑件的温度受控的底座支撑件和热介于温度控制的基板支架和温度控制的基座支架之间的绝缘体。该方法还包括将基底支撑件的温度设定为与衬底的第一处理温度相对应的第一基底温度，将衬底支撑件设置为对应于衬底的第一处理温度的第一支撑温度，基底支撑件对应于对应于衬底的第二处理温度的第二基底温度，以及将衬底支撑件设置为对应于衬底的第二处理温度的第二支撑温度。

5. 发明授权

US06639766B2 Magneto-resistance effect type composite head and production method thereof 有权
公开(公告)号：US06639766B2
公开(公告)日：2003-10-28
申请号：US09983359
申请日：2001-10-24
申请人： Ishiwata Nobuyuki , Hisanao Tsuge , Hisao Matsutera , Yuji Tsukamoto , Masafumi Nakada , Atsushi Kamijo
发明人： Ishiwata Nobuyuki , Hisanao Tsuge , Hisao Matsutera , Yuji Tsukamoto , Masafumi Nakada , Atsushi Kamijo
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3109 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046
摘要： A magneto-resistance effect (“MR”) type composite head includes a reproduction head with an MR element arranged between a first and a second magnetic shield; and a recording head arranged adjacent to the reproduction head so as to use the second magnetic shield as a first magnetic pole film and having a second magnetic pole film opposing to the first magnetic pole via a magnetic gap; the MR element includes a center region including a ferromagnetic tunnel junction magneto-resistance effect film having a first ferromagnetic layer and a second ferromagnetic layer for generating a magneto-resistance effect using the first and the second magnetic shields as electrodes so that a current flows in an almost vertical direction between the first and the second magnetic shields; a tunnel barrier layer provided between the first and the second ferromagnetic layer; and an end region arranged to sandwich the center region from both sides for /applying a bias magnetic field to the center region.

6. 发明授权

US06181503B2 Magnetic disk device using a contact start stop system 失效
公开(公告)号：US06181503B2
公开(公告)日：2001-01-30
申请号：US08991557
申请日：1997-12-16
申请人： Yuji Tsukamoto , Ken Ajiki
发明人： Yuji Tsukamoto , Ken Ajiki
IPC分类号： G11B541
CPC分类号： G11B5/6005 , G11B5/012 , G11B33/1446
摘要： It is an object of the present invention to improve reliability to a dust or the like of a magnetic disk device. The magnetic disk device of the present invention comprises a magnetic disk 10, a levitation type magnetic head slider 12 and a controller 14 for controlling an operation of the magnetic head slider 12 and the controller 14. The controller 14 moves the magnetic head slider 12 to a CSS (Contact Start Stop) region of the magnetic disk 10 at a predetermined time interval and performs a CSS operation at least once.

7. 发明授权

US06174736B1 Method of fabricating ferromagnetic tunnel junction device 有权
标题翻译：制造铁磁隧道连接装置的方法
公开(公告)号：US06174736B1
公开(公告)日：2001-01-16
申请号：US09209696
申请日：1998-12-11
申请人： Yuji Tsukamoto , Hisanao Tsuge , Nobuyuki Ishiwata , Hisao Matsutera , Masafumi Nakada , Atsushi Kamijo
发明人： Yuji Tsukamoto , Hisanao Tsuge , Nobuyuki Ishiwata , Hisao Matsutera , Masafumi Nakada , Atsushi Kamijo
IPC分类号： H01L2100
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/31 , G11B5/3163 , G11B5/3903 , G11B5/3909 , H01L43/12 , Y10T428/12458 , Y10T428/12465 , Y10T428/12569 , Y10T428/12931
摘要： There is provided a method of fabricating a ferromagnetic tunnel junction device, including the steps of (a) forming a first ferromagnetic layer on a substrate, (b) forming a tunnel barrier layer on the first ferromagnetic layer, (c) forming a second ferromagnetic layer on the tunnel barrier layer, (d) mechanically polishing end surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer, and (e) etching the surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer. The method provides a ferromagnetic tunnel junction device having a height defined with high accuracy, and including a tunnel barrier layer keeping first and second ferromagnetic layers in electrical isolation with each other.
摘要翻译：提供一种制造铁磁隧道结器件的方法，包括以下步骤：（a）在衬底上形成第一铁磁层，（b）在第一铁磁层上形成隧道势垒层，（c）形成第二铁磁性层（d）机械抛光第一铁磁层，隧道势垒层和第二铁磁层的端面，以及（e）蚀刻第一铁磁层，隧道势垒层和第二铁磁层。该方法提供具有高精度限定的高度的铁磁隧道连接装置，并且包括保持彼此电隔离的第一和第二铁磁层的隧道势垒层。

8. 发明授权

US5781376A Magnetic head with polycrystalline silicon layer on slide running surface 失效
标题翻译：磁头与多晶硅层在滑动运行表面
公开(公告)号：US5781376A
公开(公告)日：1998-07-14
申请号：US580820
申请日：1995-12-29
申请人： Yuji Tsukamoto
发明人： Yuji Tsukamoto
IPC分类号： G11B5/60 , C23C14/58 , G11B5/10 , G11B5/187 , G11B5/255 , G11B5/31 , G11B5/58 , G11B15/62 , G11B23/50 , G11B33/14
CPC分类号： C23C14/5813 , G11B23/505 , G11B5/10 , G11B5/255 , G11B5/3106 , G11B15/62 , G11B33/14 , G11B5/58 , G11B5/6011
摘要： The magnetic head disclosed has a slider which comprises a running surface where contact-sliding with respect to a magnetic recording medium occurs, and a polycrystalline silicon film which is provided on at least a portion of said running surface. The polycrystalline silicon film has a thickness of 3 to 10 nm. The running surface is formed of Al.sub.2 O.sub.3.TiC ceramic or silicon. This arrangement is effective in preventing an attraction phenomenon between the head and medium, reducing a frictional coefficient and suppressing damage to the medium.
摘要翻译：所公开的磁头具有滑块，该滑块包括相对于磁记录介质发生接触滑动的运行表面和设置在所述运行表面的至少一部分上的多晶硅膜。多晶硅膜的厚度为3〜10nm。运行表面由Al2O3.TiC陶瓷或硅形成。这种布置有效地防止了头和介质之间的吸引现象，降低了摩擦系数并且抑制了介质的损坏。

9. 发明授权

US08034176B2 Gas distribution system for a post-etch treatment system 有权
标题翻译：用于蚀刻后处理系统的气体分配系统
公开(公告)号：US08034176B2
公开(公告)日：2011-10-11
申请号：US11390196
申请日：2006-03-28
申请人： Yuji Tsukamoto , H. Steven Tomozawa , Sam Yong Kim , Thomas Hamelin
发明人： Yuji Tsukamoto , H. Steven Tomozawa , Sam Yong Kim , Thomas Hamelin
IPC分类号： C23C16/453
CPC分类号： H01L21/6875
摘要： A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.
摘要翻译：描述了蚀刻后处理系统，用于去除蚀刻过程中形成的光致抗蚀剂和蚀刻残留物。例如，蚀刻残渣可以包括含卤素材料。蚀刻后处理系统包括真空室，耦合到真空室的远程自由基产生系统，耦合到自由基产生系统并被配置为在基板上分布反应性基团的自由基气体分配系统，以及耦合到真空室并且构造成支撑基板。气体分配系统被配置为有效地将基团输送到基底并且将基团分布在基底上方。

10. 发明申请

US20100078424A1 TEMPERATURE CONTROLLED SUBSTRATE HOLDER WITH NON-UNIFORM INSULATION LAYER FOR A SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：用于基板加工系统的非均匀绝缘层的温度控制基板支架
公开(公告)号：US20100078424A1
公开(公告)日：2010-04-01
申请号：US12631278
申请日：2009-12-04
申请人： YUJI TSUKAMOTO , ERIC J. STRANG
发明人： YUJI TSUKAMOTO , ERIC J. STRANG
IPC分类号： H05B1/02 , H05B3/68 , G05D23/30
CPC分类号： F27D5/0037 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67103
摘要： A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.
摘要翻译：用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。热绝缘体包括通过温度控制的支撑基底和基底支撑件之间的热绝缘体的传热系数（W / m 2 -K）的不均匀的空间变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式