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    • 6. 发明授权
    • Method for growing single crystal
    • 生长单晶的方法
    • US5603763A
    • 1997-02-18
    • US535098
    • 1995-10-18
    • Yoshiteru TaniguchiToshiaki Asahi
    • Yoshiteru TaniguchiToshiaki Asahi
    • C30B11/00C30B7/10
    • C30B29/40C30B11/00C30B11/003C30B29/48
    • A single crystal growing method for producing a high-quality and large-diameter single crystal of a compound semiconductor with a good yield, is disclosed.A volatile element 2 is first put into a reservoir portion 1A of a quartz ampule 1. Further, a crucible 4 made of pBN, which contains a raw material 3A of a compound semiconductor, is placed in the quartz ampule 1, the vacuum sealing of which is then performed. While a vapor pressure controlling operation is performed, a furnace temperature distribution is controlled in such a manner that a vertical first temperature gradient .alpha. .degree. C./cm) in the vicinity of an outside wall of the quartz ampule corresponding to a raw melt 3B is smaller than a vertical second temperature gradient (.beta. .degree. C./cm) in a range above the top end of the crucible 4 and simultaneously, the temperature is gradually lowered. Furthermore, .alpha. ranges from 51/D.sup.2 to 102/D.sup.2 .degree. C./cm, and preferably ranges from 58/D.sup.2 to 83/D.sup.2 .degree. C./cm (incidentally, the diameter of the single crystal is D cm). Additionally, .beta. ranges from 1.06.times. to 1.72.times..degree. C./cm, more preferably, ranges from 1.19X to 1.46X .degree. C./cm ( incidentally, X is given by the following equation: X=.sqroot. R.rho./.lambda.nL), where the cooling rate of the furnace temperature and the coefficients of thermal conductivity, the specific gravity, the latent heat of melting and the formula weight of the crystal are assumed to be R .degree. C./hr, .lambda. kcal/cm.multidot.hr.multidot.K, .rho.g/cm.sup.3, L kcal/mol and n g/mol, respectively).
    • PCT No.PCT / JP94 / 02089 Sec。 371 1995年10月18日第 102(e)日期1995年10月18日PCT 1994年12月14日PCT PCT。 WO95 / 22643 PCT出版物 日期:1995年8月24日公开了一种以高产率生产化合物半导体的高品质大直径单晶的单晶生长方法。 首先将挥发性元素2放入石英安瓿1的储存部分1A中。此外,将由pBN制成的含有化合物半导体的原料3A的坩埚4放置在石英安瓿1中,真空密封 然后执行。 在执行蒸汽压力控制操作的同时,控制炉温分布,使得对应于原料熔融物3B的石英安瓿的外壁附近的垂直第一温度梯度α℃/ cm 3为 小于在坩埚4的顶端上方范围内的垂直第二温度梯度(β℃/ cm),同时温度逐渐降低。 此外,α的范围为51 / D2〜102 / D2℃/ cm,优选为58 / D2〜83 / D2℃/ cm(顺便提及,单晶的直径为Dcm)。 另外,β范围为1.06×1.72×C / cm,更优选为1.19X〜1.46XC / cm(附带地,X由下式给出:X = 2ROOT + E,rad R rho /λnL)+ EE,其中炉温的冷却速率和导热系数,比重,熔融潜热和晶体的配方重量被假定为R℃C.hr。 分别为λkcal / cm×hr×K,rho g / cm 3,L kcal / mol和ng / mol)。