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    • 8. 发明授权
    • Spin valve sensors having synthetic antiferromagnet for longitudinal bias
    • 旋转阀传感器具有用于纵向偏置的合成反铁磁体
    • US07289303B1
    • 2007-10-30
    • US09828635
    • 2001-04-05
    • Kyusik SinNingjia ZhuYingjian Chen
    • Kyusik SinNingjia ZhuYingjian Chen
    • G11B5/39
    • G11B5/3932B82Y25/00G01R33/093H01F10/3272Y10T428/1107Y10T428/1121Y10T428/1143
    • Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed magnetic moment adjoining the exchange coupling layer. The exchange coupling layer and ferromagnetic layer form a synthetic antiferromagnetic structure with part of the free layer, providing bias that reduces magnetic instabilities at edges of the free layer. Such synthetic antiferromagnetic structures can provide a stronger bias than conventional antiferromagnetic layers, as well as a more exactly defined track width than conventional hard magnetic bias layers. The synthetic antiferromagnetic structures can also provide protection for the free layer during processing, in contrast with the trimming of conventional antiferromagnetic layers that exposes if not removes part of the free layer.
    • 公开了具有减小诸如巴克豪森噪声等边缘效应的机构的磁阻(MR)传感器。 传感器包括钉扎层和具有邻接自由层的交换耦合层的自由层,以及具有与交换耦合层邻接的固定磁矩的铁磁层。 交换耦合层和铁磁层形成具有部分自由层的合成反铁磁结构,提供降低自由层边缘的磁性不稳定性的偏压。 这种合成反铁磁结构可以提供比常规反铁磁层更强的偏压,以及比常规硬磁偏置层更精确地定义的轨道宽度。 合成反铁磁性结构也可以在加工过程中为自由层提供保护,与如果不除去部分自由层的常规反铁磁层的修整相反。
    • 10. 发明授权
    • Method for making high speed, high areal density inductive write structure
    • 制造高速,高密度感应写入结构的方法
    • US07007372B1
    • 2006-03-07
    • US10656311
    • 2003-09-05
    • Yingjian ChenHua-Ching TongLei WangXizeng Shi
    • Yingjian ChenHua-Ching TongLei WangXizeng Shi
    • G11B5/127H04R31/00
    • G11B5/3146G11B5/3109G11B5/3113G11B5/3116G11B5/313G11B5/3153G11B5/3967Y10T29/49032Y10T29/49039Y10T29/49043Y10T29/49048Y10T29/49052Y10T29/49071Y10T29/49073
    • An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
    • 公开了用于磁数据记录系统的感应写入元件。 写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。 写元件包括由第一和第二磁极构成的磁轭。 第一极包括由高磁矩(高B sat sat)材料构成的基座,其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。 第二极包括一高层高层材料的薄层(也优选具有CoZrCr叠层的FeRhN纳米晶膜),其余部分由能够电镀的磁性材料构成,例如Ni -Fe合金。 导电线圈通过第一和第二极之间的磁轭,当电流流过线圈时,引起磁轭中的磁通量。 轭中的磁通在写入间隙产生边缘场,由此可以将信号传递到通过的磁介质上。