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1. 发明申请

US20120262622A1 IMAGE SENSOR, IMAGE PROCESSING APPARATUS AND MANUFACTURING METHOD 审中-公开
标题翻译：图像传感器，图像处理设备和制造方法
公开(公告)号：US20120262622A1
公开(公告)日：2012-10-18
申请号：US13445014
申请日：2012-04-12
申请人： Yi Tae Kim , Sung-Ho Choi
发明人： Yi Tae Kim , Sung-Ho Choi
IPC分类号： H04N5/225 , H01L31/0224
CPC分类号： H04N5/361 , H04N5/3658 , H04N5/3745
摘要： An image sensor includes first pixels in an active region and second pixels in an optical black region of a pixel array. The first pixels have a gate that receives an active transfer control signal, and the second pixels have a gate that receives a passive transfer control signal, like a ground voltage.
摘要翻译：图像传感器包括有源区域中的第一像素和像素阵列的光学黑色区域中的第二像素。第一像素具有接收有源传输控制信号的栅极，并且第二像素具有接收诸如接地电压的无源传输控制信号的栅极。

2. 发明授权

US08164127B2 Image sensor including a pixel cell having an epitaxial layer, system having the same, and method of forming a pixel cell 有权
标题翻译：图像传感器包括具有外延层的像素单元，具有该外延层的像素单元，以及形成像素单元的方法
公开(公告)号：US08164127B2
公开(公告)日：2012-04-24
申请号：US12585501
申请日：2009-09-16
申请人： Kyung-Ho Lee , Kwang-il Jung , Jung-Chak Ahn , Yi-Tae Kim , Kyoung-Sik Moon , Bum-Suk Kim , Young-Bae Kee , Dong-Young Lee , Tae-Sub Jung , Kang-Sun Lee
发明人： Kyung-Ho Lee , Kwang-il Jung , Jung-Chak Ahn , Yi-Tae Kim , Kyoung-Sik Moon , Bum-Suk Kim , Young-Bae Kee , Dong-Young Lee , Tae-Sub Jung , Kang-Sun Lee
IPC分类号： H01L31/113
CPC分类号： H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased.
摘要翻译：像素单元包括外延层中的衬底，外延层和光转换器件。外延层具有压花形状的掺杂浓度分布，并且包括层叠在基板上的多个层。光转换装置不包括在垂直方向上具有恒定电位的中性区域。因此，包括像素单元的图像传感器具有高量化效率，并且光转换装置之间的串扰减小。

3. 发明授权

US08003424B2 Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag 失效
标题翻译：用于制造具有袖珍光电二极管的CMOS图像传感器以最小化图像滞后的方法
公开(公告)号：US08003424B2
公开(公告)日：2011-08-23
申请号：US11983913
申请日：2007-11-13
申请人： Kyung-Ho Lee , Yi-Tae Kim , Jung-Chak Ahn , Sae-Young Kim
发明人： Kyung-Ho Lee , Yi-Tae Kim , Jung-Chak Ahn , Sae-Young Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14689 , H01L31/035281
摘要： A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.
摘要翻译： CMOS图像传感器包括形成在第一导电类型的半导体衬底中的感光器件，浮动扩散区域，转移晶体管和腔室光电二极管。浮动扩散区域是第二导电类型。转移晶体管具有设置在感光器件和浮动扩散区域之间的沟道区域。袋状光电二极管是第二导电类型，并且形成在沟道区的底表面的第一部分下方，使得沟道区的底表面的第二部分与半导体衬底相邻。

4. 发明授权

US07652707B2 Pixel circuit with reduced wiring 有权
标题翻译：像素电路减少布线
公开(公告)号：US07652707B2
公开(公告)日：2010-01-26
申请号：US11449326
申请日：2006-06-08
申请人： Young-Chan Kim , Tetsuo Asaba , Yi-Tae Kim
发明人： Young-Chan Kim , Tetsuo Asaba , Yi-Tae Kim
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00
CPC分类号： H01L27/14603 , H04N5/3741
摘要： A pixel circuit of an image sensor includes a floating diffusion node and a reset transistor. The reset transistor is coupled between the floating diffusion node and a reset control signal node of another pixel circuit of the image sensor. A voltage applied on the reset control signal node of the other pixel circuit is a reset voltage transmitted to the floating diffusion node via the reset transistor.
摘要翻译：图像传感器的像素电路包括浮动扩散节点和复位晶体管。复位晶体管耦合在浮动扩散节点和图像传感器的另一像素电路的复位控制信号节点之间。施加在另一像素电路的复位控制信号节点上的电压是通过复位晶体管传输到浮动扩散节点的复位电压。

5. 发明授权

US07573013B2 Pixel driving circuit and method of driving the same having shared contacts with neighboring pixel circuits 有权
标题翻译：像素驱动电路及其驱动方法，具有与相邻像素电路共享的触点
公开(公告)号：US07573013B2
公开(公告)日：2009-08-11
申请号：US11435961
申请日：2006-05-17
申请人： Sung-Ho Choi , Yi-Tae Kim , Young-Chan Kim , Hae-Kyung Kong
发明人： Sung-Ho Choi , Yi-Tae Kim , Young-Chan Kim , Hae-Kyung Kong
IPC分类号： H01L27/00 , H04N3/14
CPC分类号： H04N5/3741
摘要： Contacts and/or a transistor are shared by neighboring pixel circuits in an image sensor. In addition, a common interconnect line provides common control signals for minimizing metal wiring. Such minimization of space for the shared contacts, transistor, and control signals enhances the fill factor of photodiodes in the image sensor.
摘要翻译：触点和/或晶体管由图像传感器中的相邻像素电路共享。此外，公共互连线提供用于最小化金属布线的公共控制信号。共享触点，晶体管和控制信号的这种空间最小化增强了图像传感器中光电二极管的填充系数。

6. 发明授权

US07525077B2 CMOS active pixel sensor and active pixel sensor array using fingered type source follower transistor 有权
标题翻译： CMOS有源像素传感器和有源像素传感器阵列使用指法型源极跟随器晶体管
公开(公告)号：US07525077B2
公开(公告)日：2009-04-28
申请号：US11348125
申请日：2006-02-06
申请人： Young-Chan Kim , Yi-Tae Kim
发明人： Young-Chan Kim , Yi-Tae Kim
IPC分类号： H01L27/00 , H01L31/062
CPC分类号： H01L27/14603
摘要： A CMOS active pixel sensor includes a photodiode, a transmitting transistor, a reset transistor, a fingered type source follower transistor and a selecting transistor, where the photodiode generates charge in response to incident light, the transmitting transistor transmits the charge stored in the photodiode to a sensing node, the reset transistor, coupled to a power supply voltage, resets a voltage of the sensing node so that the sensing node has substantially a level of the power supply voltage, the fingered type source follower transistor amplifies the voltage of the sensing node, the selecting transistor transmits a voltage of a source electrode of the fingered type source follower transistor into an internal circuit in response to a selection signal, thus, the channel width of the source follower transistor may be increased, and the MOS device noise due to the source follower transistor may be reduced.
摘要翻译： CMOS有源像素传感器包括光电二极管，发射晶体管，复位晶体管，指型源极跟随器晶体管和选择晶体管，其中光电二极管响应于入射光产生电荷，发射晶体管将存储在光电二极管中的电荷传输到耦合到电源电压的感测节点复位晶体管复位感测节点的电压，使得感测节点具有基本上电源电压的电平，手指型源极跟随器晶体管放大感测节点的电压，选择晶体管响应于选择信号将指状型源极跟随器晶体管的源电极的电压传输到内部电路中，因此源极跟随器晶体管的沟道宽度可能增加，并且由于可以减小源极跟随器晶体管。

7. 发明申请

US20080302949A1 Photosensors Including Photodiode Control Electrodes and Methods of Operating Same 有权
标题翻译：包括光电二极管控制电极的光电传感器和操作方法相同
公开(公告)号：US20080302949A1
公开(公告)日：2008-12-11
申请号：US12132814
申请日：2008-06-04
申请人： Yi-tae Kim , Jung-chak Ahn
发明人： Yi-tae Kim , Jung-chak Ahn
IPC分类号： H01L31/00 , G01J1/44
CPC分类号： H01L31/103 , H04N5/3597 , H04N5/361 , H04N5/3745
摘要： A sensor includes a substrate, a floating diffusion node in the substrate, a photodiode in the substrate laterally spaced apart from the floating diffusion region and a transfer transistor coupling the photodiode and the floating diffusion region. The sensor further includes a photodiode control electrode disposed on the photodiode and configured to control a carrier distribution of the photodiode responsive to a control signal applied thereto. The floating diffusion region may have a first conductivity type, the photodiode may include a first semiconductor region of a second conductivity type disposed on a second semiconductor region of the first conductivity type, and the photodiode control electrode may be disposed on the first semiconductor region. The photodiode may be configured to receive incident light from a side of the substrate opposite the photodiode control electrode. The transfer transistor may include a gate electrode on a channel region in the substrate and the photodiode control electrode and the transfer transistor gate electrode may be separately controllable. In further embodiments, the photodiode control electrode comprises an extension of the transfer transistor gate electrode.
摘要翻译：传感器包括衬底，衬底中的浮动扩散节点，与浮动扩散区域横向间隔开的衬底中的光电二极管和耦合光电二极管和浮动扩散区域的传输晶体管。传感器还包括设置在光电二极管上的光电二极管控制电极，其被配置为响应于施加到其上的控制信号来控制光电二极管的载流子分布。浮置扩散区域可以具有第一导电类型，光电二极管可以包括设置在第一导电类型的第二半导体区域上的第二导电类型的第一半导体区域，并且光电二极管控制电极可以设置在第一半导体区域上。光电二极管可以被配置为从基板的与光电二极管控制电极相对的一侧接收入射光。转移晶体管可以包括在衬底中的沟道区上的栅电极，并且光电二极管控制电极和转移晶体管栅电极可以是单独可控的。在另外的实施例中，光电二极管控制电极包括传输晶体管栅电极的延伸部分。

8. 发明申请

US20060278811A1 Pixel circuit with reduced wiring 有权
标题翻译：像素电路减少布线
公开(公告)号：US20060278811A1
公开(公告)日：2006-12-14
申请号：US11449326
申请日：2006-06-08
申请人： Young-Chan Kim , Tetsuo Asaba , Yi-Tae Kim
发明人： Young-Chan Kim , Tetsuo Asaba , Yi-Tae Kim
IPC分类号： H01L27/00
CPC分类号： H01L27/14603 , H04N5/3741
摘要： A pixel circuit of an image sensor includes a floating diffusion node and a reset transistor. The reset transistor is coupled between the floating diffusion node and a reset control signal node of another pixel circuit of the image sensor. A voltage applied on the reset control signal node of the other pixel circuit is a reset voltage transmitted to the floating diffusion node via the reset transistor.
摘要翻译：图像传感器的像素电路包括浮动扩散节点和复位晶体管。复位晶体管耦合在浮动扩散节点和图像传感器的另一像素电路的复位控制信号节点之间。施加在另一像素电路的复位控制信号节点上的电压是通过复位晶体管传输到浮动扩散节点的复位电压。

9. 发明申请

US20060261431A1 Pixels for CMOS image sensors 审中-公开
标题翻译： CMOS图像传感器的像素
公开(公告)号：US20060261431A1
公开(公告)日：2006-11-23
申请号：US11436278
申请日：2006-05-18
申请人： Yi-Tae Kim , Young-Chan Kim , Hae-Kyung Kong , Sung-Ho Choi
发明人： Yi-Tae Kim , Young-Chan Kim , Hae-Kyung Kong , Sung-Ho Choi
IPC分类号： H01L31/06
CPC分类号： H01L27/14609 , H04N5/3559 , H04N5/3597 , H04N5/3745 , H04N5/37457
摘要： A unit pixel of a complementary metal-oxide semiconductor (CMOS) image sensor includes a photoelectric conversion element, a transfer transistor, a boosting capacitor and a signal transfer circuit, where the photoelectric conversion element generates a charge based on incident light, the transfer transistor transfers the charge to a floating diffusion node in response to a transfer control signal, the boosting capacitor is disposed between a gate of the transfer transistor and the floating diffusion node, the signal transfer circuit transfers an electric potential of the floating diffusion node in response to a selection signal, and a dynamic range of the electric potential of the floating diffusion node may be widened and a drain-source voltage difference of the transfer transistor may be increased so that the charge transfer efficiency may be enhanced.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器的单位像素包括光电转换元件，转移晶体管，升压电容器和信号传输电路，其中光电转换元件基于入射光产生电荷，转移晶体管响应于转移控制信号将电荷转移到浮动扩散节点，升压电容器设置在转移晶体管的栅极和浮动扩散节点之间，信号传输电路响应于可以加宽选择信号和浮动扩散节点的电位的动态范围，并且可以增加转移晶体管的漏极 - 源极电压差，从而可以提高电荷转移效率。

10. 发明申请

US20060175536A1 CMOS sensor array with a shared structure 有权
标题翻译： CMOS传感器阵列具有共享结构
公开(公告)号：US20060175536A1
公开(公告)日：2006-08-10
申请号：US11342010
申请日：2006-01-26
申请人： Young-Chan Kim , Yi-Tae Kim
发明人： Young-Chan Kim , Yi-Tae Kim
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14641 , H01L27/14643 , H04N5/37457
摘要： A CMOS sensor array includes a plurality of unit blocks. A unit block includes: N pairs of photo diode regions arranged in a first direction; 2N transfer transistors respectively corresponding to the photo diode regions, wherein each of the transfer transistors is formed at a corner of the corresponding photo diode region, and wherein for each pair of photo diode regions the two corresponding transfer transistors symmetrically oppose each other; N floating diffusion nodes, wherein each of the floating diffusion nodes is respectively arranged between a pair of photo diode regions, and wherein each of the floating diffusion nodes is shared by the two corresponding transfer transistors and the pair of photo diode regions; at least one metal line for coupling the floating diffusion nodes; a reset transistor for resetting a voltage of the floating diffusion nodes; a readout circuit including at least one transistor for sampling the floating diffusion node, wherein the reset transistor and the readout circuit are disposed between the pair of photo diode regions.
摘要翻译： CMOS传感器阵列包括多个单元块。单位块包括：沿第一方向布置的N对光电二极管区域; 分别对应于光电二极管区域的2N个转移晶体管，其中每个转移晶体管形成在相应的光电二极管区域的拐角处，并且其中对于每对光电二极管区域，两个对应的转移晶体管彼此对称地对置; N个浮动扩散节点，其中每个浮动扩散节点分别布置在一对光电二极管区域之间，并且其中每个浮动扩散节点由两个对应的传输晶体管和一对光电二极管区域共享; 用于耦合浮动扩散节点的至少一条金属线; 复位晶体管，用于复位浮动扩散节点的电压; 读出电路，包括用于对浮动扩散节点进行采样的至少一个晶体管，其中复位晶体管和读出电路设置在所述一对光电二极管区域之间。

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