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1. 发明授权

US08556594B2 Vacuum ejector and vacuum apparatus having the same 有权
标题翻译：具有相同的真空喷射器和真空装置
公开(公告)号：US08556594B2
公开(公告)日：2013-10-15
申请号：US13051088
申请日：2011-03-18
申请人： Hyun-Wook Kim , Yong-Wook Kim , Tea-Jin Park
发明人： Hyun-Wook Kim , Yong-Wook Kim , Tea-Jin Park
IPC分类号： F04F5/20 , F04F5/46
CPC分类号： F04F5/20
摘要： A vacuum pump ejector may include ejector body and a nozzle. The ejector body may have a passageway through which fluids may flow. The passageway may have an orifice. The nozzle may inject a purging gas to the orifice. The ejector may decrease a pressure between the vacuum pump and the scrubber, so that the vacuum pump may have improved efficiency. Thus, the vacuum pump may be effectively operated.
摘要翻译：真空泵喷射器可以包括喷射器主体和喷嘴。喷射器主体可以具有流体可以流过的通道。通道可以具有孔口。喷嘴可将吹扫气体注入孔口。喷射器可以减小真空泵和洗涤器之间的压力，使得真空泵可以提高效率。因此，可以有效地操作真空泵。

2. 发明授权

US06660570B2 Method of fabricating a high voltage semiconductor device using SIPOS 失效
标题翻译：使用SIPOS制造高压半导体器件的方法
公开(公告)号：US06660570B2
公开(公告)日：2003-12-09
申请号：US10140181
申请日：2002-05-08
申请人： Jin-kyeong Kim , Jong-min Kim , Kyung-wook Kim , Tae-hoon Kim , Cheol Choi , Chang-wook Kim
发明人： Jin-kyeong Kim , Jong-min Kim , Kyung-wook Kim , Tae-hoon Kim , Cheol Choi , Chang-wook Kim
IPC分类号： H01L21332
CPC分类号： H01L29/405 , H01L29/66272 , H01L29/73 , H01L29/7322
摘要： A high voltage semiconductor device including a semiconductor substrate on which a semi-insulating polycrystalline silicon layer is formed to alleviate electric field concentration in a field region, is disclosed. A thermal oxide layer is formed on the semi-insulating polycrystalline silicon layer to serve as a protective layer. The thermal oxide layer forms a good interface with the semi-insulating polycrystalline silicon layer compared to a wet etched oxide layer or a chemical vapor deposition (CVD) oxide layer, thereby decreasing the amount of leakage current. In addition, compared to a dual semi-insulating polycrystalline silicon layer, the thermal oxide layer exhibits a high surface protection effect and a high resistance against dielectric breakdown. It also allows a great reduction in fabrication time. In particular, the semi-insulating polycrystalline silicon layer is removed from the active region, thereby preventing the direct current (DC) gain of a device from being lowered within a low collector current range caused by the semi-insulating polycrystalline silicon layer.
摘要翻译：公开了一种包括半导体衬底的高电压半导体器件，半导体衬底上形成有半绝缘多晶硅层以减轻场区域中的电场集中。在半绝缘多晶硅层上形成热氧化层作为保护层。与湿蚀刻氧化物层或化学气相沉积（CVD）氧化物层相比，热氧化物层与半绝缘多晶硅层形成良好的界面，从而减少漏电流量。另外，与双半绝缘多晶硅层相比，热氧化层具有高的表面保护效果和高耐电介质击穿电阻。它还可以大大减少制造时间。特别地，从有源区域去除半绝缘多晶硅层，从而防止器件的直流（DC）增益在由半绝缘多晶硅层引起的集电极电流范围内降低。

3. 发明申请

US20110229346A1 Vacuum Ejector and Vacuum Apparatus Having the Same 有权
标题翻译：具有相同的真空喷射器和真空装置
公开(公告)号：US20110229346A1
公开(公告)日：2011-09-22
申请号：US13051088
申请日：2011-03-18
申请人： Hyun-Wook Kim , Yong-Wook Kim , Tea-Jin Park
发明人： Hyun-Wook Kim , Yong-Wook Kim , Tea-Jin Park
IPC分类号： F04F5/20
CPC分类号： F04F5/20
摘要： A vacuum pump ejector may include ejector body and a nozzle. The ejector body may have a passageway through which fluids may flow. The passageway may have an orifice. The nozzle may inject a purging gas to the orifice. The ejector may decrease a pressure between the vacuum pump and the scrubber, so that the vacuum pump may have improved efficiency. Thus, the vacuum pump may be effectively operated.
摘要翻译：真空泵喷射器可以包括喷射器主体和喷嘴。喷射器主体可以具有流体可以流过的通道。通道可以具有孔口。喷嘴可将吹扫气体注入孔口。喷射器可以减小真空泵和洗涤器之间的压力，使得真空泵可以提高效率。因此，可以有效地操作真空泵。

4. 发明公开

US20240183611A1 DRYING APPARATUS 审中-公开
公开(公告)号：US20240183611A1
公开(公告)日：2024-06-06
申请号：US18287625
申请日：2022-04-14
申请人： Tae-Wook KIM , MUGOONGMUJIN CO., LTD.
发明人： Tae-Wook KIM
IPC分类号： F26B3/04 , F26B21/04
CPC分类号： F26B3/04 , F26B21/04
摘要： The present invention relates to a drying apparatus in which objects to be dried are loaded and dried by wind and lamp heat, and has the specific features in which: the drying apparatus is divided into an upper machine room and a lower drying room by a partition plate that is parallel to the ground and installed inside a cylindrical case having closed upper and lower surfaces; an inner case, which is installed spaced apart from the inner surface of the case and has a plurality of through-holes, is installed inside the drying room; and an object loading device, in which the objects to be dried by heat from a lamp are loaded, is rotatably installed in a cylindrical space formed by the inner case.

5. 发明授权

US09591149B2 Generation of a combined image of a presentation surface 有权
标题翻译：生成呈现表面的组合图像
公开(公告)号：US09591149B2
公开(公告)日：2017-03-07
申请号：US13459825
申请日：2012-04-30
申请人： Davide Di Censo , Stefan J. Marti , Seung Wook Kim
发明人： Davide Di Censo , Stefan J. Marti , Seung Wook Kim
IPC分类号： H04N7/18 , H04N1/00 , H04N1/32
CPC分类号： H04N1/00129 , H04N1/32144 , H04N2201/0084 , H04N2201/0438 , H04N2201/3245 , H04N2201/3249 , H04N2201/3269
摘要： Example embodiments relate to generating a combined image of a presentation surface. In example embodiments, an image including a portion of a presentation surface is captured using a camera. A location identifier is then received, where the location identifier specifies a location of a digital version of the content displayed on the presentation surface. Next, the digital version of the content displayed on the presentation surface is retrieved from the location specified by the location identifier. Finally, a combined image is generated by combining the captured image and the retrieved digital version of the content displayed on the presentation surface.
摘要翻译：示例性实施例涉及生成呈现表面的组合图像。在示例实施例中，使用相机捕获包括呈现表面的一部分的图像。然后接收位置标识符，其中位置标识符指定显示在呈现表面上的内容的数字版本的位置。接下来，从由位置标识符指定的位置检索呈现表面上显示的内容的数字版本。最后，通过组合捕获的图像和显示在呈现表面上的检索到的内容的数字版本来生成组合图像。

6. 发明授权

US09583638B2 Transistors, methods of manufacturing a transistor and electronic devices including a transistor 有权
标题翻译：晶体管，制造晶体管的方法和包括晶体管的电子器件
公开(公告)号：US09583638B2
公开(公告)日：2017-02-28
申请号：US12923241
申请日：2010-09-10
申请人： Sun-il Kim , Sang-wook Kim , Jae-chul Park , Chang-jung Kim
发明人： Sun-il Kim , Sang-wook Kim , Jae-chul Park , Chang-jung Kim
IPC分类号： H01L29/10 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/7869
摘要： A transistor, a method of manufacturing a transistor, and an electronic device including a transistor are provided, the transistor may include a channel layer having a multi-layer structure. The channel layer may have a double layer structure or a triple layer structure. At least two layers of the channel layer may have different oxygen concentrations.
摘要翻译：提供晶体管，制造晶体管的方法和包括晶体管的电子器件，所述晶体管可以包括具有多层结构的沟道层。沟道层可以具有双层结构或三层结构。至少两层通道层可能具有不同的氧浓度。

7. 发明授权

US09564131B2 Low power integrated circuit to analyze a digitized audio stream 有权
标题翻译：低功率集成电路分析数字化音频流
公开(公告)号：US09564131B2
公开(公告)日：2017-02-07
申请号：US14363783
申请日：2011-12-07
申请人： Eric Liu , Stefan Johannes Walter Marti , Seung Wook Kim
发明人： Eric Liu , Stefan Johannes Walter Marti , Seung Wook Kim
IPC分类号： G10L15/00 , G10L15/26 , G06F1/32
CPC分类号： G10L15/26 , G06F1/3206 , G06F1/3293 , G10L15/1822 , G10L15/22 , G10L15/285 , G10L2015/088 , Y02D10/122
摘要： Examples disclose a low power integrated circuit to receive and digitize an audio stream. Further, the examples provide the low power integrated circuit to compare the digitized audio stream to a keyword and store the digitized audio stream in a memory. Additionally, the examples also disclose upon recognition of the keyword in the digitized audio stream, the low power integrated circuit transmits a signal to a processor to increase power and analyze the digitized audio stream.
摘要翻译：示例公开了用于接收和数字化音频流的低功率集成电路。此外，这些示例提供了低功率集成电路以将数字化音频流与关键字进行比较，并将数字化音频流存储在存储器中。此外，这些示例还在数字化音频流中识别关键字时公开，低功率集成电路向处理器发送信号以增加功率并分析数字化的音频流。

8. 发明授权

US09506359B2 Transition nozzle combustion system 有权
标题翻译：过渡喷嘴燃烧系统
公开(公告)号：US09506359B2
公开(公告)日：2016-11-29
申请号：US13437953
申请日：2012-04-03
申请人： Won-Wook Kim , Kevin Weston McMahan , Jaime Javier Maldonado
发明人： Won-Wook Kim , Kevin Weston McMahan , Jaime Javier Maldonado
IPC分类号： F01D9/02
CPC分类号： F01D9/023 , F05D2260/201 , F05D2260/202 , F23R3/002 , F23R3/06 , F23R2900/03042 , F23R2900/03044
摘要： The present application provides a combustion system for use with a cooling flow. The combustion system may include a head end, an aft end, a transition nozzle extending from the head end to the aft end, and an impingement sleeve surrounding the transition nozzle. The impingement sleeve may define a first cavity in communication with the head end for a first portion of the cooling flow and a second cavity in communication with the aft end for a second portion of the cooling flow. The transition nozzle may include a number of cooling holes thereon in communication with the second portion of the cooling flow.
摘要翻译：本申请提供了一种用于冷却流的燃烧系统。燃烧系统可以包括头端，后端，从头端延伸到后端的过渡喷嘴和围绕过渡喷嘴的冲击套筒。冲击套筒可以限定与头端连通的用于冷却流的第一部分的第一空腔和与后端连通的用于冷却流的第二部分的第二空腔。过渡喷嘴可以包括与冷却流的第二部分连通的多个冷却孔。

9. 发明申请

US20160315029A1 SEMICONDUCTOR PACKAGE AND THREE-DIMENSIONAL SEMICONDUCTOR PACKAGE INCLUDING THE SAME 审中-公开
标题翻译：半导体封装和三维半导体封装，包括它们
公开(公告)号：US20160315029A1
公开(公告)日：2016-10-27
申请号：US15019013
申请日：2016-02-09
申请人： Dong-Han LEE , Je-Gil MOON , Wook KIM , Min-Seon AHN , Yun-Hyeok IM , Kee-Moon CHUN , Jae-Soo CHAUNG , Bum-Keun CHOI , Jung-Su HA
发明人： Dong-Han LEE , Je-Gil MOON , Wook KIM , Min-Seon AHN , Yun-Hyeok IM , Kee-Moon CHUN , Jae-Soo CHAUNG , Bum-Keun CHOI , Jung-Su HA
IPC分类号： H01L23/367 , H01L25/065 , H01L23/48 , H01L23/00
CPC分类号： H01L23/481 , H01L23/367 , H01L24/13 , H01L25/105 , H01L2225/06513 , H01L2225/06541 , H01L2225/06589 , H01L2924/1432
摘要： There is provided a semiconductor package including: a semiconductor chip; and an extension die provided on the semiconductor chip, wherein the semiconductor chip includes a heating point configured to generate a temperature greater than or equal to a pre-determined reference temperature in the semiconductor chip, the heating point provided in a center region of the extension die
摘要翻译：提供一种半导体封装，包括：半导体芯片; 以及设置在所述半导体芯片上的延伸模具，其中，所述半导体芯片包括被配置为在所述半导体芯片中产生大于或等于预定基准温度的温度的加热点，所述加热点设置在所述半导体芯片的中心区域中死

10. 发明申请

US20160287015A1 DIRECT-HEAT GRILLING PAN AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：直接热轧板及其制造方法
公开(公告)号：US20160287015A1
公开(公告)日：2016-10-06
申请号：US15048667
申请日：2016-02-19
申请人： Tae Suck KIM , Jung Wook KIM , Chang Bo Co., Ltd.
发明人： Tae Suck KIM , Jung Wook KIM
IPC分类号： A47J37/10 , A47J37/06
CPC分类号： A47J37/10 , A47J37/06 , A47J37/067
摘要： A direct-heat grilling pan includes a bottom plate and a sidewall formed on a circumference of the bottom plate, the bottom plate including multiple upper supports, multiple lower supports, and an edge portion. The multiple upper supports are disposed with a first horizontal interval therebetween. The multiple lower supports are disposed with a second horizontal interval therebetween, are disposed with a vertical interval from the multiple upper supports to be positioned directly under the first horizontal interval, have a width greater than the first horizontal interval, and have on top surfaces thereof concave oil-dripping grooves in which oil drips down through the first horizontal interval. The edge portion surrounds the multiple upper supports and the multiple lower supports while connecting both end portions of the multiple upper supports and both end portions of the multiple lower supports.
摘要翻译：直热烤盘包括底板和形成在底板的圆周上的侧壁，底板包括多个上支撑件，多个下支撑件和边缘部分。多个上支撑件以其间的第一水平间隔设置。所述多个下部支撑件以其间的第二水平间隔设置，从所述多个上部支撑件以垂直间隔设置，以直接位于所述第一水平间隔之下，具有大于所述第一水平间隔的宽度，并且具有在其顶部表面上凹入的油滴槽，其中油通过第一水平间隔向下滴落。边缘部分围绕多个上支撑件和多个下支撑件，同时连接多个上支撑件的两个端部和多个下支撑件的两个端部。

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