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1. 发明申请

US20110080093A1 Apparatus and Method for Regulating the Output of a Plasma Electron Beam Source 有权
标题翻译：用于调节等离子体电子束源的输出的装置和方法
公开(公告)号：US20110080093A1
公开(公告)日：2011-04-07
申请号：US12899012
申请日：2010-10-06
申请人： Scott G. Walton , Christopher D. Cothran , Richard F. Fernsler , Robert A. Meger , William E. Amatucci
发明人： Scott G. Walton , Christopher D. Cothran , Richard F. Fernsler , Robert A. Meger , William E. Amatucci
IPC分类号： H05B31/26
CPC分类号： H01J3/025 , H01J15/02
摘要： An apparatus and method for controlling electron flow within a plasma to produce a controlled electron beam is provided. A plasma is formed between a cathode and an acceleration anode. A control anode is connected to the plasma and to the acceleration anode via a switch. If the switch is open, the ions from the plasma flow to the cathode and plasma electrons flow to the acceleration anode. With the acceleration anode suitably transparent and negatively biased with a DC high voltage source, the electrons flowing from the plasma are accelerated to form an electron beam. If the switch is closed, the ions still flow to the cathode but the electrons flow to the control anode rather than the acceleration anode. Consequently, the electron beam is turned off, but the plasma is unaffected. By controlling the opening and closing of the switch, a controlled pulsed electron beam can be generated.
摘要翻译：提供了一种用于控制等离子体内的电子流以产生受控电子束的装置和方法。在阴极和加速度阳极之间形成等离子体。控制阳极通过开关连接到等离子体和加速器阳极。如果开关断开，来自等离子体的离子流向阴极，等离子体电子流向加速度阳极。由于采用直流高电压源加速阳极适当地透明和负偏压，所以从等离子体流出的电子被加速以形成电子束。如果开关闭合，离子仍然流到阴极，但电子流向控制阳极，而不是加速阳极。因此，电子束被关闭，但是等离子体不受影响。通过控制开关的打开和关闭，可以产生受控的脉冲电子束。

2. 发明授权

US08288950B2 Apparatus and method for regulating the output of a plasma electron beam source 有权
标题翻译：用于调节等离子体电子束源的输出的装置和方法
公开(公告)号：US08288950B2
公开(公告)日：2012-10-16
申请号：US12899012
申请日：2010-10-06
申请人： Scott G. Walton , Christopher D. Cothran , Richard F. Fernsler , Robert A. Meger , William E. Amatucci
发明人： Scott G. Walton , Christopher D. Cothran , Richard F. Fernsler , Robert A. Meger , William E. Amatucci
IPC分类号： H05B31/26
CPC分类号： H01J3/025 , H01J15/02
摘要： An apparatus and method for controlling electron flow within a plasma to produce a controlled electron beam is provided. A plasma is formed between a cathode and an acceleration anode. A control anode is connected to the plasma and to the acceleration anode via a switch. If the switch is open, the ions from the plasma flow to the cathode and plasma electrons flow to the acceleration anode. With the acceleration anode suitably transparent and negatively biased with a DC high voltage source, the electrons flowing from the plasma are accelerated to form an electron beam. If the switch is closed, the ions still flow to the cathode but the electrons flow to the control anode rather than the acceleration anode. Consequently, the electron beam is turned off, but the plasma is unaffected. By controlling the opening and closing of the switch, a controlled pulsed electron beam can be generated.
摘要翻译：提供了一种用于控制等离子体内的电子流以产生受控电子束的装置和方法。在阴极和加速度阳极之间形成等离子体。控制阳极通过开关连接到等离子体和加速器阳极。如果开关断开，来自等离子体的离子流向阴极，等离子体电子流向加速度阳极。由于采用直流高电压源加速阳极适当地透明和负偏压，所以从等离子体流出的电子被加速以形成电子束。如果开关闭合，离子仍然流到阴极，但电子流向控制阳极，而不是加速阳极。因此，电子束被关闭，但是等离子体不受影响。通过控制开关的打开和关闭，可以产生受控的脉冲电子束。

3. 发明授权

US08175827B2 RF probe technique for determining plasma potential 有权
标题翻译：用于确定等离子体电位的RF探针技术
公开(公告)号：US08175827B2
公开(公告)日：2012-05-08
申请号：US13181556
申请日：2011-07-13
申请人： David N. Walker , Richard F. Fernsler , David D. Blackwell , William E. Amatucci
发明人： David N. Walker , Richard F. Fernsler , David D. Blackwell , William E. Amatucci
IPC分类号： G01R27/00
CPC分类号： H01J37/32935
摘要： An rf probe is placed within a plasma and an rf signal from a network analyzer for a given dc bias voltage Vp is applied The frequency applied by the network analyzer, ω, is less than the plasma frequency, ωpe, and therefore is not in the resonant absorption range (ω=ωpe) used to determine electron density in typical rf impedance probe operation. Bias voltages at the applied frequency are applied to the probe in a series of voltage steps in a range which includes the plasma potential. At each bias step, a value of Re(Zac), the real part of the plasma's complex impedance, is returned by the analyzer. A local minimum in the real part of the impedance Re(Zac) occurs where the applied bias voltage Vp equals the plasma potential φp. The plasma potential φp can be found by taking the first derivative of Re(Zac) with respect to Vp, ⅆ ( Re ⁡ ( Z a ⁢ ⁢ c ) ⅆ V p , and finding the value of Vp at which ⅆ ( Re ⁡ ( Z a ⁢ ⁢ c ) ⅆ V p = 0 within error tolerances.
摘要翻译：射频探针被放置在等离子体中，并且来自网络分析仪的给定直流偏置电压Vp的rf信号被施加。网络分析器ω施加的频率小于等离子体频率ωpe，因此不在谐振吸收范围（ω=ωpe）用于确定典型的rf阻抗探头操作中的电子密度。在施加的频率上的偏置电压以包括等离子体电位的范围内的一系列电压步骤施加到探头。在每个偏置步骤中，分析仪返回等离子体复阻抗的实部的Re（Zac）值。发生阻抗Re（Zac）的实部的局部最小值，其中所施加的偏置电压Vp等于等离子体电势＆php; p。可以通过对Re（Zac）相对于Vp，ⅆ（Re⁡（Z açc）ⅆV p）的一阶导数求出等离子体电位和ph p，并找到ⅆ（Re ⁡（Z a⁢c）ⅆV p = 0在误差公差范围内。

4. 发明申请

US20120046895A1 RF Probe Technique for Determining Plasma Potential 有权
标题翻译：用于确定等离子体电位的RF探针技术
公开(公告)号：US20120046895A1
公开(公告)日：2012-02-23
申请号：US13181556
申请日：2011-07-13
申请人： David N. Walker , Richard F. Fernsler , David D. Blackwell , William E. Amatucci
发明人： David N. Walker , Richard F. Fernsler , David D. Blackwell , William E. Amatucci
IPC分类号： G06F19/00
CPC分类号： H01J37/32935
摘要： An rf probe is placed within a plasma and an rf signal from a network analyzer for a given dc bias voltage Vp is applied The frequency applied by the network analyzer, ω, is less than the plasma frequency, ωpe, and therefore is not in the resonant absorption range (ω=ωpe) used to determine electron density in typical rf impedance probe operation. Bias voltages at the applied frequency are applied to the probe in a series of voltage steps in a range which includes the plasma potential. At each bias step, a value of Re(Zac), the real part of the plasma's complex impedance, is returned by the analyzer. A local minimum in the real part of the impedance Re(Zac) occurs where the applied bias voltage Vp equals the plasma potential φp. The plasma potential φp can be found by taking the first derivative of Re(Zac) with respect to Vp,  ( Re  ( Z a   c )  V p , and finding the value of Vp at which  ( Re  ( Z a   c )  V p = 0 within error tolerances.
摘要翻译：射频探针被放置在等离子体内，并且施加给定直流偏置电压Vp的来自网络分析仪的射频信号。由网络分析仪ω施加的频率小于等离子体频率ωpe，因此不在谐振吸收范围（ω=ωpe）用于确定典型的rf阻抗探头操作中的电子密度。在施加的频率上的偏置电压以包括等离子体电位的范围内的一系列电压步骤施加到探头。在每个偏置步骤中，分析仪返回等离子体复阻抗的实部的Re（Zac）值。发生阻抗Re（Zac）的实部的局部最小值，其中所施加的偏置电压Vp等于等离子体电势＆php; p。可以通过对Re（Zac）相对于Vp，υ（Re（Z ac c）υV p）的一阶导数来找到等离子体电位和ph p，并找到Vp的值，其中υ（Re ν（Z ac）νV p = 0在误差公差范围内。

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