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1. 发明公开

US20240213412A1 LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS 审中-公开
公开(公告)号：US20240213412A1
公开(公告)日：2024-06-27
申请号：US18394674
申请日：2023-12-22
申请人： TIANJIN SANAN OPTOELECTRONICS CO., LTD.
发明人： Cheng MENG , Dongmei CAO , Weihuan LI , Huan-Shao KUO , Yu-Ren PENG , Duxiang WANG
IPC分类号： H01L33/42 , H01L33/10
CPC分类号： H01L33/42 , H01L33/10
摘要： A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially disposed in such order in a thickness direction from the first surface to the second surface. An ohmic contact layer is disposed on the second surface of the semiconductor epitaxial structure, and a light-transmissive dielectric layer is disposed on the ohmic contact layer away from the semiconductor epitaxial structure. The light-transmissive dielectric layer has a plurality of through holes. A reflection layer is disposed on the light-transmissive dielectric layer and fills the through holes so as to be electrically connected to the ohmic contact layer.

2. 发明公开

US20240203956A1 LIGHT-EMITTING DEVICE, LIGHT-EMITTING APPARATUS, AND PLANT LIGHTING APPARATUS 审中-公开
公开(公告)号：US20240203956A1
公开(公告)日：2024-06-20
申请号：US18591488
申请日：2024-02-29
申请人： TIANJIN SANAN OPTOELECTRONICS CO., LTD.
发明人： Cheng MENG , Dongmei CAO , Huan-Shao KUO , Yu-Ren PENG , Duxiang WANG
IPC分类号： H01L25/075 , H01L33/42 , H01L33/46
CPC分类号： H01L25/0753 , H01L33/42 , H01L33/46
摘要： A light-emitting device includes a semiconductor epitaxial structure, a reflection layer, and a light-transmissive dielectric structure. The semiconductor epitaxial structure has a first surface and a second surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first surface is a light-exiting surface. The reflection layer is disposed on the semiconductor epitaxial structure away from the light-exiting surface, and is adapted for reflecting light emitted by the active layer. The light-transmissive dielectric structure is disposed between the reflection layer and the semiconductor epitaxial structure, and includes a first sublayer, a second sublayer, and a third sublayer. A light-emitting apparatus and a plant lighting apparatus are also provided.

3. 发明公开

US20240145621A1 VERTICAL LED CHIP STRUCTURE, METHOD OF MANUFACTURING SAME AND LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20240145621A1
公开(公告)日：2024-05-02
申请号：US18476227
申请日：2023-09-27
申请人： Tianjin Sanan Optoelectronics Co., Ltd.
发明人： Shengnan LIU , Weifan KE , Jiayu LIU , Pengjie HU , Xiao BAI
IPC分类号： H01L33/00 , H01L25/075 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/30 , H01L33/40 , H01L33/44
CPC分类号： H01L33/0066 , H01L25/0753 , H01L33/0093 , H01L33/0095 , H01L33/06 , H01L33/145 , H01L33/22 , H01L33/30 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要： A vertical LED chip structure, a method of manufacturing the same, and a light-emitting device are provided. After an epitaxial structure is bonded to a substrate, the epitaxial structure is etched first to form a first mesa. After the first mesa is formed, the epitaxial structure is continuously etched at the first mesa until the epitaxial structure is etched through and a reflective layer is exposed, and a second mesa is formed. A protective layer is formed on a surface of the structure where the first mesa and the second mesa are formed. The protective layer covers the exposed reflective layer at the second mesa, protects the epitaxial structure and the reflective layer, and protects a side wall of the epitaxial structure and the reflective layer from being corroded by a processing solution after a back surface of the substrate is polished.

4. 发明申请

US20160149073A1 Light-Emitting Diode Fabrication Method 审中-公开
标题翻译：发光二极管制造方法
公开(公告)号：US20160149073A1
公开(公告)日：2016-05-26
申请号：US14750145
申请日：2015-06-25
申请人： TIANJIN SANAN OPTOELECTRONICS CO., LTD.
发明人： LI-MING SHU , DONG-YAN ZHANG , XIAO-FENG LIU , ZHI-BIN LIU , LIANG-JUN WANG , DU-XIANG WANG
IPC分类号： H01L33/06 , H01L33/24 , H01L33/14 , H01L33/00 , H01L33/32
CPC分类号： H01L33/06 , H01L33/007 , H01L33/145 , H01L33/24 , H01L33/32
摘要： A method of fabricating a light-emitting diode includes: proving a substrate; forming an N-type layer, a low-temperature AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, x and y cannot both be zero at the same time) layer, a multiple quantum-well active region, an AlzGa1−zN (0≦z≦1) electron blocking layer, an AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1) separation layer and a P-type layer over the substrate in successive; before growth of the multiple quantum-well active region, growing a low-temperature AlxInyGa1−x−yN layer to form a “V”-shaped indentation or pit; after growth of the multiple quantum-well active region, growing a thin AlzGa1−zN electron blocking layer and then a separation layer under two-dimensional growth mode to form holes between the active region and the P-type layer to separate throughout dislocation within the V pit coverage range and contact with the P-type layer, thus eliminating current leakage and improving inverse current leakage capacity and anti-static capacity of the epitaxial wafer.
摘要翻译：制造发光二极管的方法包括：证明基板; 形成N型层，低温Al x In y Ga 1-x-y N（0＆nlE; x＆nlE; 1,0＆nlE; y＆nlE; 1，x和y不能同时为零），多量子阱活性区，AlzGa1-zN（0＆nlE; z＆nlE; 1）电子阻挡层，AlxInyGa1-x-yN（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）分离层和P型层; 在多量子阱活性区域的生长之前，生长低温Al x In y Ga 1-x-y N层以形成“V”形凹陷或凹坑; 在多量子阱活性区域生长之后，在二维生长模式下生长薄的AlzGa1-zN电子阻挡层，然后生长分离层，以在活性区域和P型层之间形成孔，以在 V坑覆盖范围并与P型层接触，从而消除了电流泄漏，提高了外延晶片的反向漏电流和抗静电能力。

5. 发明公开

US20240234633A9 LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS 审中-公开
公开(公告)号：US20240234633A9
公开(公告)日：2024-07-11
申请号：US18491036
申请日：2023-10-20
申请人： TIANJIN SANAN OPTOELECTRONICS CO., LTD.
发明人： Weihuan LI , JInghua CHEN , Yu-Ren PENG , Huan-Shao KUO , Chia-Hung CHANG
IPC分类号： H01L33/30 , H01L33/00 , H01L33/52
CPC分类号： H01L33/30 , H01L33/0025 , H01L33/52 , H01L33/06
摘要： A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1≥2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0

6. 发明公开

US20240222563A1 LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20240222563A1
公开(公告)日：2024-07-04
申请号：US18533122
申请日：2023-12-07
申请人： Tianjin Sanan Optoelectronics Co., Ltd.
发明人： Zhiwei WU , Yanyun WANG , Weiping XIONG , Di GAO , Huanshao KUO , Yuren PENG
IPC分类号： H01L33/38 , H01L33/62
CPC分类号： H01L33/387 , H01L33/62
摘要： A light-emitting element and a light-emitting device are provided. The light-emitting element includes an epitaxial layer, an insulating layer formed on a surface of the epitaxial layer, and an electrode structure. The electrode structure includes a first electrode connected to a first conductivity type semiconductor layer and a second electrode connected to a second conductivity type semiconductor layer. The electrode structure includes a wiring portion and a connecting portion. The wiring portion is located above the insulating layer. The connecting portion penetrates through the insulating layer from an edge of the wiring portion and extends towards the epitaxial layer. The connecting portion is arranged to extend from the edge of the wiring portion towards the epitaxial layer. Further, a projection of the wiring portion on a front surface of the substrate does not overlap a projection of the connecting portion on the front surface of the substrate.

7. 发明公开

US20240186455A1 VERTICAL-TYPE LIGHT-EMITTING DIODE AND LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20240186455A1
公开(公告)日：2024-06-06
申请号：US18491814
申请日：2023-10-23
申请人： Tianjin Sanan Optoelectronics Co., Ltd.
发明人： Shuili YU , Yan LI , Chenming WU , Si ZHANG , Kaiqing XU , Jinghua CHEN , Kunte LIN
IPC分类号： H01L33/38 , H01L33/62
CPC分类号： H01L33/382 , H01L33/62
摘要： The disclosure relates to a vertical-type light-emitting diode, which includes a semiconductor stack layer, a first electrode, a second electrode and a protruding protective electrode. The semiconductor stack layer has an upper surface and a lower surface opposite to each other. The semiconductor stack layer includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked in sequence from the lower surface to the upper surface. The first electrode is located on the lower surface of the semiconductor stack layer and connected to the first semiconductor layer. The second electrode is located on the upper surface of the semiconductor stack layer and is connected to the second semiconductor layer, and the protruding protective electrode is connected to the second electrode. The upper surface of the protruding protective electrode is higher than the upper surface of the second electrode.

8. 发明公开

US20240170615A1 FLIP-CHIP LIGHT-EMITTING DEVICE AND LIGHT EMITTING MODULE HAVING THE SAME 审中-公开
公开(公告)号：US20240170615A1
公开(公告)日：2024-05-23
申请号：US18499798
申请日：2023-11-01
申请人： TIANJIN SANAN OPTOELECTRONICS CO., LTD.
发明人： Zhiwei WU , Yanyun WANG , Weiping XIONG , Di GAO , Huan-Shao KUO , Yu-Ren PENG
IPC分类号： H01L33/38 , H01L25/075 , H01L33/10 , H01L33/62
CPC分类号： H01L33/382 , H01L25/0753 , H01L33/10 , H01L33/62
摘要： A flip-chip light-emitting device includes a transparent substrate, an epitaxial structure, a transparent dielectric layer, a plurality of first contact electrodes, multiple second contact electrodes, a metallic reflection layer, a first insulating layer, and an electrode pad region. The epitaxial structure is formed on the transparent substrate, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first and second contact electrodes are embedded in the transparent dielectric layer, and respectively connected to the first and second type semiconductor layers. The second and first contact electrodes are arranged in an array. The second contact electrodes are disposed in a region perpendicularly below the first pad and are distributed along a circular ring that is concentric with one of the first contact electrodes. A light emitting module includes a circuit board, and the flip-chip light emitting device is mounted on the circuit board.

9. 发明公开

US20230246128A1 LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20230246128A1
公开(公告)日：2023-08-03
申请号：US18191682
申请日：2023-03-28
申请人： TIANJIN SANAN OPTOELECTRONICS CO., LTD.
发明人： Dongyan ZHANG , Wen LIU , Huiwen LI , Chao JIN , Kuoliang TANG , Kuanfu PAN , Duxiang WANG
IPC分类号： H01L33/22 , H01L33/62 , H01L33/60
CPC分类号： H01L33/22 , H01L33/62 , H01L33/60
摘要： A light-emitting device includes a semiconductor epitaxial structure that has a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first mesa side wall that is defined by a side wall of the first conductive semiconductor layer and a side wall of the active layer, and a first mesa surface that is defined by a portion of a top surface of the second conductive semiconductor layer. The first mesa side wall has a side wall bottom end connected to the first mesa surface to form a connection portion, which is constituted of the side wall bottom end and a mesa surface proximal region of the first mesa surface that adjoins the side wall bottom end and is roughened. A method for manufacturing the light-emitting device is also disclosed.

10. 发明公开

US20230207767A1 LIGHT EMITTING DEVICE AND LIGHTING APPARATUS USING THE SAME 审中-公开
公开(公告)号：US20230207767A1
公开(公告)日：2023-06-29
申请号：US18173455
申请日：2023-02-23
申请人： TIANJIN SANAN OPTOELECTRONICS CO., LTD.
发明人： Si ZHANG , Shuili YU , Chenming WU , Kunte LIN , Huan-Shao KUO , Jiansheng QIU
IPC分类号： H01L33/62 , H01L33/30
CPC分类号： H01L33/62 , H01L33/30
摘要： A light-emitting device includes a semiconductor structure, a through hole, an electrical connecting structure, and a first electrode metal layer. The semiconductor structure has a first surface and a second surface, and includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer. The first surface is located on the first-type semiconductor layer, and the second surface is located on the second-type semiconductor layer. The through hole passes through the first-type semiconductor layer, the second-type semiconductor layer, and the active layer. The through hole has a first section, and the first-type semiconductor layer is exposed through the first section to electrically connect with the electrical connecting structure. A first angle between a side wall of the first type semiconductor layer that bounds the first section and the plane of the first surface ranges from 0° to 90°.

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